| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/26/1991 | US4996570 Semiconductor structure having a conductive channel |
| 02/26/1991 | US4996569 Integrated circuit |
| 02/26/1991 | US4996512 Overvoltage resistor and method for its manufacture |
| 02/26/1991 | US4996168 Forming conductivity without using ion implantation |
| 02/26/1991 | US4996167 Method of making electrical contacts to gate structures in integrated circuits |
| 02/26/1991 | US4996166 Process for fabricating a heterojunction bipolar transistor |
| 02/26/1991 | US4996164 Two-step implantation of substrates, compatible to vertical NPN transistors |
| 02/26/1991 | US4996081 Nitriding a silicon substrate to form silicon nitride, depositing a silicon layer, nitriding again to form a composite dielectric layer |
| 02/21/1991 | WO1991002379A1 Misfet and method of producing the same |
| 02/21/1991 | DE3926886A1 In planartechnologie erstellter grosschip mit schalttransistoren In planar created large chip with switching transistors |
| 02/20/1991 | EP0413491A2 Method of making a semiconductor device |
| 02/20/1991 | EP0413479A1 Uniform temperature power transistor |
| 02/20/1991 | EP0413390A2 Active matrix liquid crystal colour display devices |
| 02/20/1991 | EP0413256A2 Semiconductor structure for high power integrated circuits |
| 02/20/1991 | EP0413154A2 Double carrier deflection high sensitivity magnetic sensor |
| 02/20/1991 | EP0413054A1 Input protection structure for integrated circuits |
| 02/19/1991 | US4994999 High-speed and high-density semiconductor memory |
| 02/19/1991 | US4994904 MOSFET having drain voltage detection function |
| 02/19/1991 | US4994894 Semiconductor device having an improved wiring pattern |
| 02/19/1991 | US4994893 Field effect transistor substantially coplanar surface structure |
| 02/19/1991 | US4994892 Aluminum germanium ohmic contacts to gallium arsenide |
| 02/19/1991 | US4994891 Shielded transistor device |
| 02/19/1991 | US4994888 Monolithic semiconductor device having CCD, bipolar and MOS structures |
| 02/19/1991 | US4994887 High voltage merged bipolar/CMOS technology |
| 02/19/1991 | US4994886 Composite MOS transistor and application to a free-wheel diode |
| 02/19/1991 | US4994885 Bidirectional triode thyristor |
| 02/19/1991 | US4994884 Gate-controlled bi-directional semiconductor switching device |
| 02/19/1991 | US4994883 Field controlled diode (FCD) having MOS trench gates |
| 02/19/1991 | US4994882 Semiconductor device and method |
| 02/19/1991 | US4994881 Bipolar transistor |
| 02/19/1991 | US4994880 Semiconductor device constituting bipolar transistor |
| 02/19/1991 | US4994875 Virtual phase charge transfer device |
| 02/19/1991 | US4994872 Insulated gate static induction transistor and integrated circuit including same |
| 02/19/1991 | US4994871 Unos igbt |
| 02/19/1991 | US4994870 Static induction type semiconductor device |
| 02/19/1991 | US4994869 NMOS transistor having inversion layer source/drain contacts |
| 02/19/1991 | US4994868 Suitable for high frequency, high power applications |
| 02/19/1991 | US4994866 Complementary semiconductor device |
| 02/19/1991 | US4994696 Turn-on/off driving technique for insulated gate thyristor |
| 02/19/1991 | US4994403 Forming first and second drain regions on opposite sides of source region; semiconductors |
| 02/19/1991 | US4994402 Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device |
| 02/19/1991 | US4994401 Method of making a thin film transistor |
| 02/19/1991 | US4994400 Forming dielectric and conductive sidewalls along opening in composite layer, doping |
| 02/19/1991 | US4994215 Method of fabricating complex microcircuit boards, substrates and microcircuits and the substrates and microcircuits |
| 02/19/1991 | US4993396 Method for driving an insulated gate semiconductor device |
| 02/14/1991 | DE4024526A1 Metal oxide semiconductor-controlled high performance thyristor - can be switched on and off by MOS transistor uses self-aligning process with fewer masks |
| 02/13/1991 | EP0412837A2 Ultraviolet erasable non-volatile memory devices |
| 02/13/1991 | EP0412772A2 Semiconductor device with a passivation layer |
| 02/13/1991 | EP0412701A2 Thin film transistor and preparation thereof |
| 02/13/1991 | EP0412558A2 Method of manufacturing nonvolatile semiconductor memories |
| 02/13/1991 | EP0412502A1 Method of making MES type field effect transistor using III-V compound semiconductor |
| 02/13/1991 | EP0412185A1 Metallization for semiconductor devices having a diffusion barrier |
| 02/13/1991 | EP0412106A1 Accelerometer |
| 02/12/1991 | US4993053 Charge transfer device provided with an improved output stage |
| 02/12/1991 | US4992980 Electrically programmable memory |
| 02/12/1991 | US4992908 Integrated circuit module |
| 02/12/1991 | US4992848 Self-aligned contact technology |
| 02/12/1991 | US4992847 Interconnected hybrid integrated circuit |
| 02/12/1991 | US4992846 Semiconductor |
| 02/12/1991 | US4992844 Semiconductor device |
| 02/12/1991 | US4992843 Collector contact of an integrated bipolar transistor |
| 02/12/1991 | US4992842 Charge-coupled device channel with countinously graded built-in potential |
| 02/12/1991 | US4992840 Aging resistance |
| 02/12/1991 | US4992839 Field effect thin film transistor having a semiconductor layer formed from a polycrystal silicon film containing hydrogen atom and halogen atom and process for the preparation of the same |
| 02/12/1991 | US4992838 Vertical MOS transistor with threshold voltage adjustment |
| 02/12/1991 | US4992836 Device for controlling the electrical supply to a load, in a "smart" power integrated circuit |
| 02/12/1991 | US4992764 High-power FET circuit |
| 02/12/1991 | US4992394 Forming metal silicides; accuracy |
| 02/12/1991 | US4992391 Multilayer; polysilicon and silicide layers |
| 02/12/1991 | US4992390 Trench gate structure with thick bottom oxide |
| 02/12/1991 | US4992389 Making a self aligned semiconductor device |
| 02/12/1991 | US4992388 Short channel IGFET process |
| 02/12/1991 | US4992387 Method for fabrication of self-aligned asymmetric field effect transistors |
| 02/12/1991 | US4991939 Liquid crystal display device |
| 02/12/1991 | CA1280222C Ion implantation into in-based group iii-v compound semiconductors |
| 02/12/1991 | CA1280221C Power mos transistor structure |
| 02/07/1991 | WO1991001570A1 Semiconductor device |
| 02/07/1991 | WO1991001569A1 Semiconductor device and method of producing the same |
| 02/07/1991 | DE4024728A1 MOS device, esp. power vertical-MOSFET |
| 02/07/1991 | DE3925123A1 Electrode arrangement for FETs - has sink electrode surface surrounded by source electrode continuous surface |
| 02/06/1991 | EP0412002A1 Process for heteroepitaxy |
| 02/06/1991 | EP0411947A1 BICMOS integrated circuit having a shallow trench bipolar transistor with vertical base contacts |
| 02/06/1991 | EP0411797A1 Self aligned registration marks for integrated circuit fabrication |
| 02/06/1991 | EP0411726A2 A method of manufacturing flat panel display backplanes |
| 02/06/1991 | EP0411573A2 Nonvolatile semiconductor memory device and method of operating the same |
| 02/06/1991 | EP0411088A1 Formation of microstructures with removal of liquid by freezing and sublimation. |
| 02/05/1991 | US4990998 Semiconductor device to prevent out-diffusion of impurities from one conductor layer to another |
| 02/05/1991 | US4990994 Electrode structure for silicon carbide semiconductors |
| 02/05/1991 | US4990991 Bipolar transistor and method of manufacturing the same |
| 02/05/1991 | US4990985 Charge coupled device having a parallel-serial converting portion |
| 02/05/1991 | US4990984 Semiconductor device having protective element |
| 02/05/1991 | US4990982 Semiconductor device of high breakdown voltage |
| 02/05/1991 | US4990981 Thin film transistor and a liquid crystal display device using same |
| 02/05/1991 | US4990980 Semiconductor memory device |
| 02/05/1991 | US4990979 Non-volatile memory cell |
| 02/05/1991 | US4990978 Semiconductor device |
| 02/05/1991 | US4990977 High current thin film transistor |
| 02/05/1991 | US4990976 Semiconductor device including a field effect transistor having a protective diode between source and drain thereof |
| 02/05/1991 | US4990975 Insulated gate bipolar transistor and method of manufacturing the same |
| 02/05/1991 | US4990974 Fermi threshold field effect transistor |