Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/1991
03/19/1991US5001533 Semiconductor device
03/19/1991US5001528 Radiation hardened CMOS on SOI or SOS devices
03/19/1991US5001527 Multilayer semiconductor of polycrystalline silicon and metal silicide, insulating oxide film on electrode, capacitors for c omputers
03/19/1991US5001524 Digitally controlled field effect attenuator devices
03/19/1991US5001521 Semiconductor substrate including strained layer superlattice structure layer
03/19/1991US5001452 Injection of an ionized substance of a dopant into a diamond matrix
03/19/1991US5001365 Logic circuit using bipolar and field effect transistor, including a delayed switching arrangement
03/19/1991US5001078 Method of making semiconductor memory device
03/19/1991US5001077 Method of producing an asymmetrically doped LDD MESFET
03/19/1991US5001075 Fabrication of dielectrically isolated semiconductor device
03/19/1991US5001074 Forming a semiconductor layer on a single crystal, an epitaxial doped layer and an oxide layer, transistors
03/19/1991US5000811 Precision buttable subunits via dicing
03/16/1991WO1991004578A1 OHMIC CONTACTS FOR GaAs AND GaAlAs
03/16/1991CA2059125A1 Ohmic contacts for gaas and gaa1as
03/13/1991EP0416924A2 Method of producing conductive members on a semiconductor surface
03/13/1991EP0416805A2 Transistor with voltage clamp
03/13/1991EP0416798A2 Manufacturing method for semiconductor device
03/13/1991EP0416707A1 Method of manufacturing a semiconductor device comprising a field effect transistor and a capacitor
03/13/1991EP0416687A2 Process for manufacturing EEPROM memory cells having a single level of polysilicon and thin oxide by using differential oxidation
03/13/1991EP0416593A2 CCD having a circuit for handling a fundamental clock signal
03/13/1991EP0416574A2 E2PROM with a floating gate formed in a semiconductor substrate and method of fabricating the same
03/13/1991EP0416333A1 Method of manufacturing a static induction transistor
03/13/1991EP0416226A1 Double heterostructure step recovery diode
03/13/1991EP0416198A1 Electron wave deflection in modulation doped and other doped semiconductor structures
03/13/1991EP0416166A1 Methods of making a heterojunction bipolar transistor having a separate collector contact
03/13/1991EP0416141A1 Process for manufacturing an FET having an asymmetrically positioned gate region
03/13/1991EP0416092A1 Floating gate transistor and process for making it
03/13/1991EP0258271A4 Partially dielectrically isolated semiconductor devices
03/12/1991US4999812 Architecture for a flash erase EEPROM memory
03/12/1991US4999697 Sequential-quenching resonant-tunneling transistor
03/12/1991US4999692 Semiconductor magnetic field sensor
03/12/1991US4999690 Transistor
03/12/1991US4999687 Logic element and article comprising the element
03/12/1991US4999685 Multilayer electrical semiconductor contactor, dopes
03/12/1991US4999684 Symmetrical blocking high voltage breakdown semiconducotr device
03/12/1991US4999683 Avalanche breakdown semiconductor device
03/12/1991US4999682 Electronic and optoelectronic laser devices utilizing light hole properties
03/12/1991US4999619 Electro-optic display device for use in the reflection mode
03/12/1991US4999518 MOS switching circuit having gate enhanced lateral bipolar transistor
03/12/1991US4999337 Yttrium-barium-copper oxide
03/12/1991US4999309 P-N junction formed by ion implants masking, diffusion
03/12/1991US4998665 Multilayer bonded structure with projections of high melting and low melting conductive materials
03/08/1991CA2023227A1 Method of producing conductive members on a semiconductor device
03/07/1991WO1991003078A1 Insulated gate thyristor with gate turn on and turn off
03/07/1991WO1991003077A1 Large chip with switching transistors manufactured by planar technology
03/07/1991WO1991002999A1 Thin-film transistor substrate, method of producing the same, liquid crystal display panel, and liquid crystal display device
03/07/1991DE3929161A1 Halbleiterbauelement Semiconductor device
03/07/1991CA2023259A1 Method of manufacturing semiconductor devices
03/06/1991EP0415852A2 Input circuit for CCD delay line
03/06/1991EP0415842A1 Method of making an inverted staggered active matrix for display panel
03/06/1991EP0415775A2 Method of manufacturing a semiconductor memory device
03/06/1991EP0415774A1 Capacitor for an integrated circuit
03/06/1991EP0415768A2 Semiconductor device comprising a field-effect transistor and method of producing the semiconductor device
03/06/1991EP0415751A1 Thin film capacitor and manufacturing method thereof
03/06/1991EP0415660A2 FET having a high trap concentration interface layer and method of fabrication
03/06/1991EP0415537A2 Wiring contact portion of a semiconductor device and method for manufacturing the same
03/06/1991EP0415528A2 Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device
03/06/1991EP0415255A2 Protection circuit for use in semiconductor integrated circuit device
03/06/1991EP0137805B1 Fabrication of mos integrated circuit devices
03/05/1991US4998265 Method of driving a charge detection circuit
03/05/1991US4998179 Capacitive semiconductive sensor with hinged diaphragm for planar movement
03/05/1991US4998161 LDD MOS device having an element separation region having an electrostatic screening electrode
03/05/1991US4998158 Hypoeutectic ohmic contact to N-type gallium arsenide with diffusion barrier
03/05/1991US4998156 Structure for a complementary-symmetry COMFET pair
03/05/1991US4998155 Radiation-hardened semiconductor device with surface layer
03/05/1991US4998153 Charge-coupled device
03/05/1991US4998152 Thin film transistor
03/05/1991US4998151 Power field effect devices having small cell size and low contact resistance
03/05/1991US4998150 Raised source/drain transistor
03/05/1991US4998149 Static induction type semiconductor device
03/05/1991US4998148 Schottky diode having injected current collector
03/05/1991US4998147 Field effect attenuator devices having controlled electrical lengths
03/05/1991US4998146 High voltage thin film transistor
03/05/1991US4997794 Method of making semiconductor device comprising a capacitor and a buried passivation layer
03/05/1991US4997787 Method for fabricating a semiconductor film which is electrically isolated from a substrate
03/05/1991US4997779 Forming metal silicide layer; etching, doping
03/05/1991US4997778 Process for forming a self-aligned FET having a T-shaped gate structure
03/05/1991US4997777 Manufacturing process for an integrated circuit comprising double gate components
03/05/1991US4997775 Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
03/05/1991US4997262 Liquid crystal display element
03/01/1991CA2024471A1 Polycrystalline silicon thin film and transistor using the same
02/1991
02/28/1991DE3927899A1 Thyristor module with main and auxiliary thyristors - has higher charge carrier life in auxiliary thyristor region
02/27/1991EP0414618A1 Thin film MOS transistor with the channel region connected to the source and method of fabrication
02/27/1991EP0414499A2 Semiconductor structure with closely coupled substrate temperature sense element
02/27/1991EP0414400A2 MOSFET depletion device
02/27/1991EP0414226A2 MOS field-effect transistor with sidewall spacers
02/27/1991EP0414040A1 A semiconductor device with a uniform surface doping well region and method of making the same
02/27/1991EP0414013A2 Method for forming bipolar transistor in conjunction with complementary metal oxide semiconductor transistors
02/27/1991EP0238549B1 Nonvolatile memory cell
02/26/1991US4996686 Charge transfer device with reset voltage generating circuit
02/26/1991US4996627 High sensitivity miniature pressure transducer
02/26/1991US4996588 Device for interconnection and protection of a bare microwave component chip
02/26/1991US4996586 Crimp-type semiconductor device having non-alloy structure
02/26/1991US4996581 Bipolar transistor
02/26/1991US4996577 Photovoltaic isolator and process of manufacture thereof
02/26/1991US4996575 Low leakage silicon-on-insulator CMOS structure and method of making same
02/26/1991US4996574 MIS transistor structure for increasing conductance between source and drain regions
02/26/1991US4996573 Vertical thin film transistor and optical sensor having leakage current suppression elements
02/26/1991US4996572 Semiconductor memory device
02/26/1991US4996571 Non-volatile semiconductor memory device erasing operation
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