Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/1991
04/09/1991US5006914 Single crystal semiconductor substrate articles and semiconductor devices comprising same
04/09/1991US5006912 Heterojunction bipolar transistor with SiGe
04/09/1991US5006911 Transistor device with high density contacts
04/09/1991US5006816 Semiconductor integrated circuit including differential transistor circuit having a pair of FETs
04/09/1991US5006485 Method of manufacturing an intergrated circuit including steps for forming interconnections between patterns formed at different levels
04/09/1991US5006483 Fabrication of P-N junction semiconductor device
04/09/1991US5006478 Method for manufacture of semiconductor device
04/09/1991US5006477 Integrated circuits
04/09/1991US5006476 Transistor manufacturing process using three-step base doping
04/09/1991US5006421 Metalization systems for heater/sensor elements
04/09/1991US5005414 Acceleration pickup
04/09/1991CA1282872C Circuit containing integrated bipolar and complementary mos transistors on a common substrate
04/09/1991CA1282871C Resonant-tunneling device, and mode of device operation
04/09/1991CA1282671C Device having strain induced region
04/04/1991WO1991004599A1 Controllable temperature-compensated voltage-limiting device
04/04/1991WO1991004581A1 Guard barrier for schottky barrier devices
04/04/1991WO1991004579A1 Semiconductor component
04/04/1991WO1991004574A1 Method of manufacturing a field effect transistor and a semiconductor element
04/04/1991DE3932238A1 GTO thyristor with laminated body - has control base forming layer within second lateral region, separated by groove
04/04/1991DE3931589A1 Halbleiterschaltelement Semiconductor switching element
04/03/1991EP0420764A2 Charge transfer device with meander channel
04/03/1991EP0420748A1 Process of fabricating a high-tension MIS integrated circuit
04/03/1991EP0420672A1 Semiconducteur stubstrate structure for use in power IC device
04/03/1991EP0420569A2 Glass tube/stainless steel header interface for pressure sensor
04/03/1991EP0420485A1 MOS gated bipolar devices
04/03/1991EP0420322A1 Process for manufacturing a semiconductor integrated circuit including a heterojunction bipolar transistor and/or buried resistors
04/03/1991EP0420188A1 Semiconductor heterojunction structure
04/03/1991EP0420182A2 Nonvolatile memory cell and its manufacturing method
04/03/1991EP0420164A1 Bipolar power semiconductor device and method for making the same
04/03/1991EP0420068A2 Charge transfer device having MIM structures and method for driving the same
04/03/1991EP0419898A2 Method of enhancing the withstand voltage of a multilayered semiconductor device
04/03/1991EP0419763A1 A stable interconnection metallization for VLSI devices including copper
04/03/1991EP0419663A1 Nonvolatile semiconductor memory and method of producing the same
04/03/1991EP0419586A1 Integrated circuit comprising a vertical transistor.
04/03/1991CN1050469A Bipolar and cmos transistor
04/02/1991US5005103 Method of manufacturing folded capacitors in semiconductor and folded capacitors fabricated thereby
04/02/1991US5005102 Multilayer electrodes for integrated circuit capacitors
04/02/1991US5005065 High current gate turn-off thyristor
04/02/1991US5005060 Tablecloth memory matrix with staggered EPROM cells
04/02/1991US5005059 Digital-to-analog converting field effect device and circuitry
04/02/1991US5005056 Amorphous-silicon thin film transistor array substrate
04/02/1991US5004700 Using polyvinyl alcohol
03/1991
03/29/1991CA2026126A1 Process for the production of a high voltage mis integrated circuit
03/27/1991EP0419256A1 Carbon doping MOSFET substrate to suppress hot electron trapping
03/27/1991EP0419160A1 Amorphous silicon semiconductor devices
03/27/1991EP0419136A1 Electronic device with internal defect correction member
03/27/1991EP0419128A1 Silicon MOSFET doped with germanium to increase lifetime of operation
03/27/1991EP0419062A2 Electrode formed of semiconductor compounds and method of forming them
03/27/1991EP0418983A1 Method of manufacturing a field effect transistor and a semiconductor element
03/27/1991EP0418737A1 Method of manufacturing a semiconductor substrate dielectric isolating structure
03/27/1991EP0418504A2 Organic semiconductor memory device having a MISFET structure and its control method
03/27/1991EP0418500A2 Semiconductor device for charge transfer
03/27/1991EP0418468A1 Method for producing an ultra-thin dielectric for microelectronics applications
03/27/1991EP0418422A1 CMOS compatible bipolar transistor having a reduced collector-substrate capacitance, and method for making the same
03/27/1991EP0418421A1 Bipolar transistor having a reduced collector capacitance, and method for making the same
03/27/1991EP0264415B1 Semiconductor component for protection against overvoltages and overcurrents
03/26/1991US5003511 Voltage supply switching device for nonvolatile memories in MOS technology
03/26/1991US5003375 Silicon layer with metal silicide on surface
03/26/1991US5003372 High breakdown voltage semiconductor device
03/26/1991US5003371 Fuse-melting device
03/26/1991US5003370 High power frequency semiconductor device with improved thermal resistance
03/26/1991US5003369 Thyristor of overvoltage self-protection type
03/26/1991US5003368 Turn-off thyristor
03/26/1991US5003367 Sucking electrode for shortening the turn-off time in a semiconductor component
03/26/1991US5003366 Hetero-junction bipolar transistor
03/26/1991US5003365 Bipolar transistor with a sidewall-diffused subcollector
03/26/1991US5003360 Semiconductor functional element
03/26/1991US5003356 Thin film transistor array
03/26/1991US5003246 Monolithic bidirectional switch with power MOS transistors
03/26/1991US5002367 Multi-level circuits, methods for their fabrication, and display devices incorporating such circuits
03/26/1991US5001934 Solid state pressure sensor
03/26/1991CA2026086A1 Method of fabricating highly lattice mismatched quantum well structures
03/23/1991WO1991004577A1 Hot-carrier suppressed sub-micron misfet device
03/23/1991CA2065242A1 Hot-carrier suppressed sub-micron misfet device
03/22/1991CA2023023A1 Carbon doping mosfet substrate to suppress hot electron trapping
03/21/1991WO1991003843A1 Semiconducteur component
03/21/1991WO1991003842A1 Insulated gate bipolar transistor
03/21/1991WO1991003841A1 Element, method of fabricating the same, semiconductor element and method of fabricating the same
03/21/1991DE4029121A1 Triac with inbuilt trigger elements - has pair of facing thyristors and switching arrangement integrated in single semiconductor chip
03/21/1991DE4026121A1 MOSFET with conductivity modulation - uses Schottky diode as collector resulting in faster turn-off and less danger of latch-up
03/21/1991DE3930536A1 Bipolar transistor with large band-gap emitter material - uses single crystalline silicon as emitter and collector and forms base-region from silicon-germanium cpd.
03/21/1991DE3930434A1 GTO thyristor of circular construction - has large number of emitter islands to allow switching by relatively small current pulse
03/20/1991EP0418185A1 Method of fabricating a narrow base transistor
03/20/1991EP0417942A1 Manufacture of polycrystalline silicon thin films and of transistors therefrom
03/20/1991EP0417851A2 Two-terminal non-linear devices and their method of fabrication
03/20/1991EP0417838A1 Method of bonding together two bodies
03/20/1991EP0417738A1 Power semiconductor device
03/20/1991EP0417737A1 Method of manufacturing a semiconductor device using ion implantation
03/20/1991EP0417646A2 MOS type semiconductor device with a multilayer gate electrode and method for manufacturing the same
03/20/1991EP0417645A1 MES field effect transistor formed in a diamond layer
03/20/1991EP0417522A2 Method for forming protective barrier on silicided regions
03/20/1991EP0417456A2 Method of producing semiconductor device
03/20/1991EP0417197A1 Deposited tunneling oxide
03/20/1991EP0166003B1 Semiconductor integrated circuit
03/19/1991US5001540 Thin-film transistor operable at high voltage and a method for manufacturing the same
03/19/1991US5001538 Bipolar sinker structure and process for forming same
03/19/1991US5001537 Semiconductor device for electrical overstress protection
03/19/1991US5001536 Semiconductor device
03/19/1991US5001535 Static induction type thyristor
03/19/1991US5001534 Heterojunction bipolar transistor
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