| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/02/1991 | EP0425147A2 Metallization processing |
| 05/02/1991 | EP0425037A2 A method of manufacturing a semiconductor device |
| 05/02/1991 | EP0424935A2 Circuit for driving a liquid crystal panel |
| 05/02/1991 | EP0424857A2 Process for producing ohmic electrode for p-type cubic system boron nitride |
| 05/02/1991 | EP0424710A2 Thyristor and method of manufacturing the same |
| 05/02/1991 | EP0424394A1 Means for reducing damage to jfets from electrostatic discharge events. |
| 05/02/1991 | DE4034186A1 Barrier layer FET - esp. JFET made of cpd. semiconductor |
| 05/02/1991 | DE4033309A1 MOSFET semiconductor device - having ion-implanted regions with impurity ion concn. profile |
| 05/02/1991 | DE3935998A1 Gold-doped silicon semiconductor device - with axially structured charge carrier life-time profile |
| 05/02/1991 | CA2070405A1 Ferro-electric non-volatile variable resistive element |
| 04/30/1991 | US5012476 Device of semiconductor materials formed on a substrate having a different lattice parameter and application to a laser |
| 04/30/1991 | US5012446 Large-scale EPROM memory with a high coupling factor |
| 04/30/1991 | US5012436 Sensor arrangement with amplifier offset cancellation |
| 04/30/1991 | US5012320 Semiconductor device having high-reliable interconnections with titanium silicide film |
| 04/30/1991 | US5012316 Multiaxial transducer interconnection apparatus |
| 04/30/1991 | US5012315 Split-gate field effect transistor |
| 04/30/1991 | US5012313 Insulated gate semiconductor device |
| 04/30/1991 | US5012312 Semiconductor integrated circuit and a process for producing the same |
| 04/30/1991 | US5012311 Semiconductor thin film device with thick insulator at gate edge |
| 04/30/1991 | US5012309 Semiconductor memory device comprising capacitor portions having stacked structures |
| 04/30/1991 | US5012308 Semiconductor memory device |
| 04/30/1991 | US5012307 Electrically-erasable, electrically-programmable read-only memory |
| 04/30/1991 | US5012306 Hot-carrier suppressed sub-micron MISFET device |
| 04/30/1991 | US5012305 High speed junction field effect transistor for use in bipolar integrated circuits |
| 04/30/1991 | US5012304 Semiconductor devices having strain-induced lateral confinement of charge carriers |
| 04/30/1991 | US5012301 Three terminal semiconductor device |
| 04/30/1991 | US5012143 Integrated delay line |
| 04/30/1991 | US5011792 Sputter depositing tungsten-antimony-indium film |
| 04/30/1991 | US5011790 Method of manufacturing cubic boron nitride p-n junction body |
| 04/30/1991 | US5011788 Process of manufacturing semiconductor integrated circuit device and product formed thereby |
| 04/30/1991 | US5011787 Matrix of memory points on semiconductor substrate |
| 04/30/1991 | US5011785 Insulator assisted self-aligned gate junction |
| 04/30/1991 | CA1283741C Method for manufacturing a planar, self-aligned emitter-base complex |
| 04/25/1991 | DE4032020A1 Semiconductor switching component of VLSI type - has three conductors of mutually spaced regions of semiconductor body material |
| 04/25/1991 | DE4025122A1 Turn-off, power MOS controlled thyristor - has emitters of individual cells, each at edge region of larger emitter region |
| 04/25/1991 | DE3935230A1 Highly doped contact zone prodn. for weakly doped semiconductor zone - with min. number of process stages e.g. in MOSFET, bipolar transistor or IGBT mfr. |
| 04/24/1991 | EP0424298A2 A BiCMOS process |
| 04/24/1991 | EP0424191A2 Device and method for defect handling in semi-conductor memory |
| 04/24/1991 | EP0424100A2 Method of fabricating a heterojunction bipolar transistor |
| 04/24/1991 | EP0424019A2 Field-effect-transistor with gate spacer |
| 04/24/1991 | EP0424014A2 Circuit including bistable, bipolar transistor |
| 04/24/1991 | EP0423973A2 Silicide gate level runners |
| 04/24/1991 | EP0423884A1 Method for deposition of silicon nitride layers on glass substrates |
| 04/24/1991 | EP0423826A2 MOS-type integrated circuit |
| 04/24/1991 | EP0423791A1 MIS capacitive element |
| 04/24/1991 | EP0423721A2 Semiconductor device with overvoltage protective function and method of fabricating such device |
| 04/24/1991 | EP0423535A2 Semiconductor device made by an epitaxial growth technique and method for the making of the same |
| 04/23/1991 | US5010512 Neural network having an associative memory that learns by example |
| 04/23/1991 | US5010386 Insulator separated vertical CMOS |
| 04/23/1991 | US5010384 Gate turn-off thyristor with resistance layers |
| 04/23/1991 | US5010383 Power transistor device and method for making the same |
| 04/23/1991 | US5010382 Heterojunction bipolar transistor having double hetero structure |
| 04/23/1991 | US5010377 Isolated gate MESFET and method of trimming |
| 04/23/1991 | US5010305 Microwave integrated circuit |
| 04/23/1991 | US5010039 Method of forming contacts to a semiconductor device |
| 04/23/1991 | US5010035 Wafer base for silicon carbide semiconductor device |
| 04/23/1991 | US5010034 CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron |
| 04/23/1991 | US5010029 Concurrent forming reference structure; etching |
| 04/23/1991 | US5010028 Method of making hot electron programmable, tunnel electron erasable contactless EEPROM |
| 04/23/1991 | US5010027 Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure |
| 04/23/1991 | US5010026 Process for making bipolar transistor |
| 04/23/1991 | US5010025 Infrared detector |
| 04/23/1991 | US5010023 Method for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristics |
| 04/23/1991 | CA1283490C Method for passivating a compound semiconductor surface and device having improved semiconductor- insulator interface |
| 04/18/1991 | WO1991005372A1 Integrated circuit device |
| 04/18/1991 | WO1991005371A1 Nmos device with integral esd protection |
| 04/17/1991 | EP0422940A2 Method of forming a DMOS transistor |
| 04/17/1991 | EP0422901A1 MOS field effect transistor and method for manufacturing same |
| 04/17/1991 | EP0422824A1 Field-effect transistor with polysilicon window pad |
| 04/17/1991 | EP0422676A2 Semiconductor input protection device |
| 04/17/1991 | EP0422606A2 Semiconductor device having E2PROM and EPROM in one chip |
| 04/17/1991 | EP0422250A1 Semiconductor device and method of producing the same |
| 04/17/1991 | EP0422129A1 Enclosed buried channel transistor. |
| 04/17/1991 | CN1012405B Selective intermixing of layered structures composed on thin solid films |
| 04/16/1991 | US5008738 Semiconductor variable capacitance element |
| 04/16/1991 | US5008736 Thermal protection method for a power device |
| 04/16/1991 | US5008725 Plural polygon source pattern for MOSFET |
| 04/16/1991 | US5008724 Semiconductor device |
| 04/16/1991 | US5008723 MOS thin film transistor |
| 04/16/1991 | US5008721 Electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel |
| 04/16/1991 | US5008720 Semiconductor device with stepped well |
| 04/16/1991 | US5008719 Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| 04/16/1991 | US5008590 Display arrangement having pin diode switching elements |
| 04/16/1991 | US5008218 Method for fabricating a thin film transistor using a silicide as an etch mask |
| 04/16/1991 | US5008214 Random access memory |
| 04/16/1991 | US5008212 Selective asperity definition technique suitable for use in fabricating floating-gate transistor |
| 04/16/1991 | US5008211 Method for forming FET with a super lattice channel |
| 04/16/1991 | US5008210 Process of making a bipolar transistor with a trench-isolated emitter |
| 04/16/1991 | US5008209 Anisotropic etching |
| 04/16/1991 | US5008207 Method of fabricating a narrow base transistor |
| 04/11/1991 | DE3932490A1 Thyristor with high barrier effect in blocking direction - has P-emitter lateral dimensions for its location within thyristor central region |
| 04/10/1991 | EP0421608A2 Method of forming a vertical type superlattice layer of compound semiconductor |
| 04/10/1991 | EP0421507A2 Method of manufacturing a bipolar transistor |
| 04/10/1991 | EP0421476A2 Method of manufacturing a semiconductor device |
| 04/10/1991 | EP0421446A2 Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and nonvolatile memory cell are formed in one chip |
| 04/10/1991 | EP0421397A1 Diamond semiconductor device and method of manufacture |
| 04/10/1991 | EP0421344A1 Crimp-type power semiconductor device |
| 04/10/1991 | EP0421205A2 A method of fabricating highly lattice mismatched quantum well structures |
| 04/10/1991 | EP0183722B1 High density ic module assembly |
| 04/09/1991 | US5006915 Electric device and photoelectric conversion device comprising the same |