| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) | 
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| 05/22/1991 | EP0428175A1 Method of making a semiconductor sensor having funnel-shaped apertures in the semiconductor substrate | 
| 05/22/1991 | EP0428044A2 High power semiconductor device having a housing | 
| 05/22/1991 | EP0427930A2 Monolithic silicon membrane device and fabrication process therefor | 
| 05/22/1991 | EP0427905A2 Grid-inserted quantum structure | 
| 05/22/1991 | CN1051637A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof | 
| 05/21/1991 | US5018104 Redundant circuit incorporated in semiconductor memory device | 
| 05/21/1991 | US5017997 Integrated circuit with high output current I2 L transistor | 
| 05/21/1991 | US5017996 Semiconductor device and production method thereof | 
| 05/21/1991 | US5017992 High blocking-capacity semiconductor component | 
| 05/21/1991 | US5017991 Light quenchable thyristor device | 
| 05/21/1991 | US5017990 Raised base bipolar transistor structure and its method of fabrication | 
| 05/21/1991 | US5017984 Amorphous silicon thin film transistor array | 
| 05/21/1991 | US5017983 Amorphous silicon thin film transistor with a depletion gate | 
| 05/21/1991 | US5017982 Semiconductor Memory Cells | 
| 05/21/1991 | US5017981 Semiconductor memory and method for fabricating the same | 
| 05/21/1991 | US5017980 Electrically-erasable, electrically-programmable read-only memory cell | 
| 05/21/1991 | US5017979 EEPROM semiconductor memory device | 
| 05/21/1991 | US5017978 EPROM having a reduced number of contacts | 
| 05/21/1991 | US5017976 Semiconductor device having intermediate layer for pinching off conductive path during reverse bias application | 
| 05/21/1991 | US5017973 Resonant tunneling device | 
| 05/21/1991 | US5017950 Variable-capacitance diode element having wide capacitance variation range | 
| 05/21/1991 | US5017517 Method of fabricating semiconductor device using an Sb protection layer | 
| 05/21/1991 | US5017508 Having Improved Short Circuit Safe Operating Area | 
| 05/21/1991 | US5017507 Method of fabricating semiconductor integrated circuit devices including updiffusion to selectively dope a silicon layer | 
| 05/21/1991 | US5017505 Method of making a nonvolatile semiconductor memory apparatus with a floating gate | 
| 05/21/1991 | US5017504 Vertical type MOS transistor and method of formation thereof | 
| 05/21/1991 | US5017503 Process for making a bipolar transistor including selective oxidation | 
| 05/21/1991 | US5017308 Microcrystalline grains interspersed in amorphous phase dopes | 
| 05/21/1991 | CA1284392C Metal-oxide-semiconductor (mos) field effect transistor having extremely shallow source/drain zones and silicide terminal zones, and a process for producing the transistor circuit | 
| 05/21/1991 | CA1284391C2 Semiconductor structure with silicide base tap | 
| 05/16/1991 | WO1991006982A1 Passivated polycrystalline semiconductors and quantum well/superlattice structures fabricated thereof | 
| 05/15/1991 | EP0427319A2 Device for the protection against breakdown of an N+ type diffuse region inserted in a vertical-type semiconductor integrated power structure | 
| 05/15/1991 | EP0427285A2 Method of manufacturing radiation resistant semiconductor device | 
| 05/15/1991 | EP0427261A2 Semiconductor pressure sensor connected to a support element | 
| 05/15/1991 | EP0427255A2 Semiconductor integrated circuit device and the method of manufacturing the same | 
| 05/15/1991 | EP0427253A2 Semiconductor integrated circuit device including bipolar transistors, MOS FETs and CCD | 
| 05/15/1991 | EP0427187A2 Microwave semiconductor device | 
| 05/15/1991 | EP0426877A1 Method of producing compound semiconductor devices | 
| 05/15/1991 | CN1051448A Word erasable buried bit line eeprom | 
| 05/14/1991 | US5016215 High speed EPROM with reverse polarity voltages applied to source and drain regions during reading and writing | 
| 05/14/1991 | US5016081 Mobile ion getterer for metal conductors | 
| 05/14/1991 | US5016078 CMOS integrated circuit structure protected against electrostatic discharges | 
| 05/14/1991 | US5016076 Lateral MOS controlled thyristor | 
| 05/14/1991 | US5016070 Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors | 
| 05/14/1991 | US5016069 Large-scale EPROM memory | 
| 05/14/1991 | US5016067 Vertical MOS transistor | 
| 05/14/1991 | US5016066 Vertical power MOSFET having high withstand voltage and high switching speed | 
| 05/14/1991 | US5016065 Stress-free, defect-free | 
| 05/14/1991 | US5016064 Quantom well structure having enhanced conductivity | 
| 05/14/1991 | US5015876 High speed charge-coupled sampler and rate reduction circuit | 
| 05/14/1991 | US5015874 Status holding circuit and logic circuit using the same | 
| 05/14/1991 | US5015603 TiW diffusion barrier for AuZn ohmic contact to P-Type InP | 
| 05/14/1991 | US5015601 Method of manufacturing a nonvolatile semiconductor device | 
| 05/14/1991 | US5015599 Method of manufacturing a device comprising MIS transistors having a projecting gate on the weakly doped parts of source and drain regions | 
| 05/14/1991 | US5015598 Metal-insulator-smiconductor | 
| 05/14/1991 | US5015597 Process for the production of an inverted structure, active matrix display screen | 
| 05/14/1991 | US5015596 Semiconductors | 
| 05/14/1991 | US5015595 Method of making a high performance MOS device having both P- and N-LDD regions using single photoresist mask | 
| 05/14/1991 | US5015594 Process of making BiCMOS devices having closely spaced device regions | 
| 05/14/1991 | US5015593 Method of manufacturing semiconductor device | 
| 05/14/1991 | US5014415 Manufacturing method of a detector using resistance elements | 
| 05/14/1991 | CA1284236C Semiconductor device with low defect density oxide | 
| 05/14/1991 | CA1284235C Folded extended window field effect transistor | 
| 05/14/1991 | CA1284234C Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics | 
| 05/14/1991 | CA1284232C Low dose emitter vertical fuse | 
| 05/10/1991 | WO1991007780A1 Semiconductor switch | 
| 05/10/1991 | CA2069911A1 Semiconductor device | 
| 05/08/1991 | EP0426380A2 Non-alloyed ohmic contact to III-V semiconductors-on-silicon | 
| 05/08/1991 | EP0426305A1 Method for etching windows having different depths | 
| 05/08/1991 | EP0426252A2 A semiconductor device and method of manufacturing a semiconductor device | 
| 05/08/1991 | EP0426251A1 Process for manufacturing a device having MIS transistors with an inverted T-shaped gate electrode | 
| 05/08/1991 | EP0426250A1 Process for manufacturing a device having MIS transistors with a gate overlapping the lightly-doped source and drain regions | 
| 05/08/1991 | EP0426241A2 Process for the manufacture of a component to limit the programming voltage and to stabilise the voltage incorporated in an electric device with EEPROM memory cells | 
| 05/08/1991 | EP0426151A2 Method of manufacturing a multi-layered wiring structure of semiconductor integrated circuit device | 
| 05/07/1991 | USRE33584 High electron mobility single heterojunction semiconductor devices | 
| 05/07/1991 | US5014243 Programmable read only memory (PROM) having circular shaped emitter regions | 
| 05/07/1991 | US5014109 Miniaturization of a contact hole in a semiconductor device | 
| 05/07/1991 | US5014108 MESFET for dielectrically isolated integrated circuits | 
| 05/07/1991 | US5014106 Semiconductor device for use in a hybrid LSI circuit | 
| 05/07/1991 | US5014102 MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal | 
| 05/07/1991 | US5014101 Semiconductor IGBT with improved turn-off switching time | 
| 05/07/1991 | US5014097 On-chip high voltage generator and regulator in an integrated circuit | 
| 05/07/1991 | US5014018 Nonlinear transmission line for generation of picosecond electrical transients | 
| 05/07/1991 | US5013939 Thin-film transistor array | 
| 05/07/1991 | US5013904 Integrated photodetector with hysteresis | 
| 05/07/1991 | US5013693 Semiconductors | 
| 05/07/1991 | US5013692 Process for preparing a silicon nitride insulating film for semiconductor memory device | 
| 05/07/1991 | US5013686 Method of making semiconductor devices having ohmic contact | 
| 05/07/1991 | US5013685 Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon | 
| 05/07/1991 | US5013683 Method for growing tilted superlattices | 
| 05/07/1991 | US5013682 Method for selective epitaxy using a WSI mask | 
| 05/07/1991 | US5013677 Resistor, transistor, capacitor | 
| 05/07/1991 | US5013676 Structure of MIS-type field effect transistor and process of fabrication thereof | 
| 05/07/1991 | US5013675 Semiconductors | 
| 05/07/1991 | US5013674 A method of manufacturing integrated circuits comprising EPROM memory and logic transistors | 
| 05/07/1991 | CA2028938A1 Microwave semiconductor device | 
| 05/02/1991 | WO1991006121A1 Ferro-electric non-volatile variable resistive element | 
| 05/02/1991 | EP0425301A2 Vertical thin film transistor and optical sensor having leakage current suppression elements | 
| 05/02/1991 | EP0425244A2 Semiconductor device having a heteroepitaxial substrate | 
| 05/02/1991 | EP0425242A1 Bipolar transistor structure |