Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
06/1991
06/27/1991DE3942967A1 Fast power diode e.g. Schottky or PIN-epitaxial diode - uses PNN with doping of P region adjusted to give optimum switching and blocking characteristics
06/27/1991DE3942490A1 Feldeffekt-gesteuertes halbleiterbauelement Field-effect-controlled semiconductor component
06/26/1991EP0434383A1 Semiconductor device gate structure with oxide layer therein
06/26/1991EP0434318A2 Low sheet resistance diffused contacts to buried diffused resistors using isolation regions and buried layer
06/26/1991EP0434234A2 MOS devices having improved electrical match
06/26/1991EP0434182A2 Fabrication of buried layers in integrated circuits
06/26/1991EP0434161A2 Active matrix electro-optic display device with storage capacitors and projection color apparatus employing same
06/26/1991EP0434153A1 A method of making a semiconductor device with a npn bipolar transistor
06/26/1991EP0434121A1 Non-volatile split gate EPROM memory cell and self-aligned field insulation process for obtaining the above cell
06/26/1991EP0433996A1 Anisotropic conductive film and process for producing same
06/26/1991EP0433825A1 Extinguishable power semiconductor device
06/26/1991EP0433650A1 Semiconductor device having bipolar-MOS composite element pellet suitable for pressure contacted structure
06/26/1991EP0433476A1 Thyristor having cathode shorts
06/26/1991EP0216937B1 Ic card
06/26/1991CN1052573A Lateral pnp transistor using latch voltage of npn transistor
06/25/1991US5027252 Semiconductor input protection device
06/25/1991US5027251 MOSFET including current mirror FET therein
06/25/1991US5027189 Integrated circuit solder die-attach design and method
06/25/1991US5027187 Contactors
06/25/1991US5027185 Polycide gate FET with salicide
06/25/1991US5027184 NPN type lateral transistor with minimal substrate operation interference
06/25/1991US5027182 High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks
06/25/1991US5027180 Double gate static induction thyristor
06/25/1991US5027179 Resonant-tunneling heterojunction bipolar transistor device
06/25/1991US5027177 Floating base lateral bipolar phototransistor with field effect gate voltage control
06/25/1991US5027175 Integrated circuit semiconductor device having improved wiring structure
06/25/1991US5027170 Active layer doped in a GaAs
06/25/1991US5027169 Semiconductor device with substrate misorientation
06/25/1991US5027167 Semiconductor intergrated circuit
06/25/1991US5027166 High voltage, high speed Schottky semiconductor device and method of fabrication
06/25/1991US5027165 Buried zener diode
06/25/1991US5026666 Method of making integrated circuits having a planarized dielectric
06/25/1991US5026663 Method of fabricating a structure having self-aligned diffused junctions
06/25/1991US5026658 Depositing, etching film membrane in channel
06/25/1991US5026656 MOS transistor with improved radiation hardness
06/25/1991US5026655 Process of fabricating a heterojunction field effect transistor
06/25/1991US5026654 Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes
06/25/1991US5025741 Prevention silicon atoms from separating
06/25/1991CA1285334C Schottky barrier diode with highly doped surface region
06/25/1991CA1285333C High density vertical trench transistor and capacitor memory cell structure and fabrication therefor
06/20/1991DE4040070A1 PNP lateral transistor with NPN device - uses breakdown voltage of parallel NPN device to protect against static electrically
06/20/1991DE4024844A1 Bonding semiconductor substrate by oxidn. - using surface recesses to promote oxidising atmos. flow
06/19/1991EP0433174A1 Integrated circuit with complete protection against ultraviolet rays
06/19/1991EP0432948A2 Compound semiconductor device and production method thereof
06/19/1991EP0432925A2 Method and apparatus for sensing thermal stress in integrated circuits
06/19/1991EP0432796A2 Semiconductor device
06/19/1991EP0432792A2 Nonvolatile semiconductor memory device and method of manufacturing the same
06/19/1991EP0432789A1 Method of manufacturing a semiconductor element with the extrinsic gettering process
06/19/1991EP0432472A2 Signal output circuit having bipolar transistor in output stage and arranged in CMOS semiconductor integrated circuit
06/18/1991US5025302 PNP type lateral transistor with minimal substrate operation interference
06/18/1991US5025299 Cellular power semiconductor device
06/18/1991US5025298 Dielectric regions
06/18/1991US5025296 Center tapped FET
06/18/1991US5025293 Conductivity modulation type MOSFET
06/18/1991US5025250 Matrix display device
06/18/1991US5024993 Superconductive field effect transistor and cryogenic semiconductor inverter for providing signals
06/18/1991US5024967 Doping procedures for semiconductor devices
06/18/1991US5024965 Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
06/18/1991US5024963 Method of fabricating a BCCD channel with stair-case doping by self-alignment
06/18/1991US5024959 CMOS process using doped glass layer
06/18/1991US5024958 Reduced capacitance between base and collector layers and reduced base layer resistance
06/18/1991US5024957 Improved switching times
06/18/1991US5024956 Method of manufacturing a semiconductor device including mesa bipolar transistor with edge contacts
06/18/1991US5024955 Doping an electoconductive epitaxial layer on a semiconductor substrate, lamp-annealing to form a diffusion layer to cover exposed surface
06/18/1991CA2005791A1 Method of manufacturing a solid-state device and solid-state device, particularly semiconductor device
06/13/1991WO1991008593A1 Semiconductive structures, methods for controlling their conductivity and sensitive elements based on those semiconductive structures
06/13/1991WO1991008582A1 Ohmic electrode of n-type cubic boron nitride and method of forming the same
06/12/1991EP0432058A1 Dynamic isolation circuit for integrated circuits
06/12/1991EP0432044A1 III-V-Compound power transistor in silicon substrate and method of fabrication
06/12/1991EP0432035A1 Quantum well optical device and production process
06/12/1991EP0431911A2 Memory cell having floating gate and semiconductor memory using the same
06/12/1991EP0431855A1 Semiconductor device with insulated gate transistor
06/12/1991EP0431836A1 Semiconductor device and electronic device by use of the semiconductor
06/12/1991EP0431835A1 Bipolar semiconductor device
06/12/1991EP0431817A1 Fast damper diode
06/12/1991EP0431721A2 Reaction barrier for a multilayer structure in an integrated circuit
06/12/1991EP0431522A2 Method for manufacturing semiconductor device
06/12/1991EP0431444A2 Method of producing MIS transistor having gate electrode of matched conductivity type
06/12/1991EP0431290A2 MOS switching circuit having gate enhanced lateral bipolar transistor
06/12/1991EP0430965A1 Vlsi bipolar process and keyhole transistor
06/12/1991EP0277193B1 Full wave rectifier circuit
06/11/1991US5023836 Semiconductor memory device
06/11/1991US5023750 Electronic component having improved low resistance contact and manufacturing method therefor
06/11/1991US5023699 Resin molded type semiconductor device having a conductor film
06/11/1991US5023698 Semiconductor device
06/11/1991US5023696 Semiconductor device having composite substrate formed by fixing two semiconductor substrates in close contact with each other
06/11/1991US5023694 Side wall contact in a nonvolatile electrically alterable memory cell
06/11/1991US5023692 Power MOSFET transistor circuit
06/11/1991US5023691 Insulated gate bipolar transistor
06/11/1991US5023687 Semiconductor device
06/11/1991US5023683 Semiconductor memory device with pillar-shaped insulating film
06/11/1991US5023680 Floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
06/11/1991US5023679 Semiconductor device
06/11/1991US5023678 High power MOSFET and integrated control circuit therefor for high-side switch application
06/11/1991US5023677 Low parasitic FET topology for power and low noise GaAs FETs
06/11/1991US5023676 Compound semiconductor MESFET device with passivation film
06/11/1991US5023675 High electron mobility transistor
06/11/1991US5023674 Field effect transistor
06/11/1991US5023671 Microstructures which provide superlattice effects and one-dimensional carrier gas channels
06/11/1991US5023196 Method for forming a MOSFET with substrate source contact
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