| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/16/1991 | US5032878 High voltage planar edge termination using a punch-through retarding implant |
| 07/16/1991 | US5032877 Quantum-coupled ROM |
| 07/16/1991 | US5032541 Method of producing a semiconductor device including a Schottky gate |
| 07/16/1991 | US5032540 Phosphorus gradient, semiconductors |
| 07/16/1991 | US5032538 Embedding tungsten in gallium arsenide |
| 07/16/1991 | US5032536 Method for manufacturing a liquid crystal display device with thin-film-transistors |
| 07/16/1991 | US5032535 Method of manufacturing semiconductor device |
| 07/16/1991 | US5032534 Doping, annealing, semiconductors |
| 07/16/1991 | US5032532 Method for fabricating insulated gate semiconductor device |
| 07/16/1991 | US5032531 Semiconductors |
| 07/16/1991 | US5032529 Trench gate VCMOS method of manufacture |
| 07/16/1991 | US5032472 Vapor deposited thin film |
| 07/16/1991 | US5031461 Matched pair of sensor and amplifier circuits |
| 07/11/1991 | WO1991010265A1 Field-effect-controlled semiconductor component |
| 07/11/1991 | WO1991010263A1 Geometry dependent doping and electronic devices produced |
| 07/11/1991 | WO1991010262A1 Method of manufacturing semiconductor device |
| 07/11/1991 | DE4040751A1 GTO thyristor with frusto=conical semiconductor body - has anode emitter zone adjacent smaller main surface, middle zone and cathode base zone |
| 07/10/1991 | EP0436475A2 Eprom device with metallic source connections and fabrication thereof |
| 07/10/1991 | EP0436335A2 Photoelectric converting device |
| 07/10/1991 | EP0436297A2 Small BiCMOS transistor |
| 07/10/1991 | EP0436192A1 Method of Manufacturing Semiconductor Device with Taper Structure |
| 07/10/1991 | EP0436184A2 Method of manufacturing a semiconductor device utilising an impurity segregation phenomenon |
| 07/10/1991 | EP0436171A1 High voltage planar edge termination using a punch-through retarding implant |
| 07/10/1991 | EP0436158A2 Solid state pressure sensor |
| 07/10/1991 | EP0436156A1 Nonvolatile semiconductor memory device having tunnel insulating film structure |
| 07/10/1991 | EP0436130A2 Trench charge-coupled device |
| 07/10/1991 | EP0436089A2 Superlattice multistate circuits |
| 07/10/1991 | EP0436038A1 Semiconductor device and method of producing the same |
| 07/09/1991 | US5031149 Non-volatile semiconductor memory device having, at the prestage of an address decoder, a level shifter for generating a program voltage |
| 07/09/1991 | US5031021 Substrate with p-n junction; polysilicon film covering |
| 07/09/1991 | US5031020 Semiconductor device having two different active elements whose partial area is commonly used |
| 07/09/1991 | US5031019 Method for manufacturing a semiconductor device having isolated islands and its resulting structure |
| 07/09/1991 | US5031016 Semiconductor component with turn-off facility |
| 07/09/1991 | US5031014 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom |
| 07/09/1991 | US5031012 Devices having asymmetric delta-doping |
| 07/09/1991 | US5031011 MOS type semiconductor device |
| 07/09/1991 | US5031010 Semiconductor memory device and method of manufacturing the same |
| 07/09/1991 | US5031009 Conductivity modulation semiconductor with no negative resistance characteristics |
| 07/09/1991 | US5031008 MOSFET transistor |
| 07/09/1991 | US5031007 SLS complementary logic devices with increase carrier mobility |
| 07/09/1991 | US5031005 Semiconductor device |
| 07/09/1991 | US5030589 Multilayer; refractory silicide, heat resistant layer of refractory, silicide, nitride |
| 07/09/1991 | US5030585 Split-polysilicon CMOS DRAM process incorporating selective self-aligned silicidation of conductive regions and nitride blanket protection of N-channel regions during P-channel gate spacer formation |
| 07/09/1991 | US5030584 Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion |
| 07/09/1991 | US5030583 Method of making single crystal semiconductor substrate articles and semiconductor device |
| 07/09/1991 | US5030581 Method of fabricating a semiconductor apparatus |
| 07/09/1991 | CA2033380A1 Microwave fet |
| 07/09/1991 | CA1286001C Means for reducing damage to jfets from electrostatic discharge events |
| 07/09/1991 | CA1285732C Langmuir-blodgett ultrathin membrane of polyfumarate |
| 07/06/1991 | CA2033281A1 Semiconductor device |
| 07/04/1991 | DE4042047A1 Voltage control amplifier with differential transistor pairs - has emitter magnitude of one transistor pair as multiple of other transistor pair emitter magnitude |
| 07/03/1991 | EP0435779A2 Semiconductor optical memory device for optical storage of information with increased recording density |
| 07/03/1991 | EP0435773A1 Image pick-up device with integrated deflection circuits |
| 07/03/1991 | EP0435541A2 Semiconductor device having internal current limit overvoltage protection |
| 07/03/1991 | EP0435534A2 Method of manufacturing integrated circuit and integrated circuit made thereby |
| 07/03/1991 | EP0435466A2 Integrated circuits having a planarized dielectric |
| 07/03/1991 | EP0435406A1 Process for the manufacture of powermos semiconductor devices and the devices obtained therewith |
| 07/03/1991 | EP0435392A1 Method of manufacturing a semiconductor device with monosilicon regions and polysilicon conductors provided with a metal silicide toplayer |
| 07/03/1991 | EP0435353A2 Semiconductor device and a method of fabricating the same |
| 07/03/1991 | EP0435331A2 Semiconductor device and a method of fabricating the same |
| 07/03/1991 | EP0435308A1 Lateral semiconductor device |
| 07/03/1991 | EP0435257A2 Fabrication method for biMOS semiconductor device with improved speed and reliability |
| 07/03/1991 | EP0435135A1 A method of forming a Germanium layer and a heterojunction bipolar transistor formed therefrom |
| 07/03/1991 | EP0435105A1 Method of manufacturing a Schottky diode device |
| 07/03/1991 | EP0435021A2 Method for manufacturing anode side short circuits in thyristors |
| 07/03/1991 | EP0434914A2 High voltage semiconductor device having a sense electrode and a method of manufacturing the same |
| 07/03/1991 | EP0434850A1 Semiconductor device |
| 07/03/1991 | CA2032558A1 Solid state pressure sensor |
| 07/02/1991 | US5029324 Semiconductor device having a semiconductive protection layer |
| 07/02/1991 | US5029323 Semiconductor device |
| 07/02/1991 | US5029322 Power MOSFET with current-monitoring |
| 07/02/1991 | US5029321 Solid state image sensing device formed of charge coupled devices |
| 07/02/1991 | US5029277 Optically compensated bipolar transistor |
| 07/02/1991 | US5029190 Output circuit having high charge to voltage conversion gain |
| 07/02/1991 | US5029189 Input structure for charge coupled devices with controllable input bias |
| 07/02/1991 | US5029139 Word erasable buried bit line EEPROM |
| 07/02/1991 | US5029130 Single transistor non-valatile electrically alterable semiconductor memory device |
| 07/02/1991 | US5029128 Semiconductor memory device with ferroelectric capacitor cells with a plate to which a mid-level voltage is applied |
| 07/02/1991 | US5029127 Bipolar SRAM having word lines as vertically stacked pairs of conductive lines parallelly formed with holding current lines |
| 07/02/1991 | US5028990 Semiconductor memory device having improved dynamic memory cell structure |
| 07/02/1991 | US5028980 Trench capacitor with expanded area |
| 07/02/1991 | US5028979 Table cloth matrix of EPROM memory cells with buried junctions, individually accessible by a traditional decoder |
| 07/02/1991 | US5028976 Complementary MOS integrated circuit device |
| 07/02/1991 | US5028975 Semiconductor devices and a process for producing the same |
| 07/02/1991 | US5028974 Semiconductor switching device with anode shortening structure |
| 07/02/1991 | US5028973 Bipolar transistor with high efficient emitter |
| 07/02/1991 | US5028968 Radiation hard GaAs high electron mobility transistor |
| 07/02/1991 | US5028564 Edge doping processes for mesa structures in SOS and SOI devices |
| 07/02/1991 | US5028556 Integrated Circuits |
| 07/02/1991 | US5028554 Process of fabricating an MIS FET |
| 07/02/1991 | US5028553 Method of making fast, trench isolated, planar flash EEPROMS with silicided bitlines |
| 07/02/1991 | US5028552 Method of manufacturing insulated-gate type field effect transistor |
| 07/02/1991 | US5028550 Method of manufacturing semiconductor device |
| 07/02/1991 | US5028548 Method of manufacturing a planar semiconductor device having a guard ring structure |
| 07/02/1991 | US5028122 Liquid crystal active-matrix display device |
| 07/02/1991 | CA1285663C Buried contact structure for reducing resistance in integrated circuits |
| 06/27/1991 | WO1991009426A1 Scr structure for fast turn-on switching |
| 06/27/1991 | WO1991009425A1 Method of manufacturing a solid-state device and solid-state device, particularly semiconductor device |
| 06/27/1991 | WO1991009424A1 Power mosfet transistor circuit |
| 06/27/1991 | DE4039012A1 MOS semiconductor circuit element - uses voltage control element in upper surface of substrate |