Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
08/1991
08/07/1991EP0439751A2 Superconductor gate field effect transistor
08/07/1991EP0439750A2 Semiconductor superconductor integrated circuit technology
08/06/1991US5038321 Eraseable electro-optic storage disk, method of and apparatus for recording and reading data therefor
08/06/1991US5038193 Semiconductor integrated circuit device
08/06/1991US5038191 Semiconductor memory device
08/06/1991US5038188 Insulated-gate type transistor and semiconductor integrated circuit using such transistor
08/06/1991US5038187 Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
08/06/1991US5038185 Structurally consistent surface skimming hetero-transverse junction lasers and lateral heterojunction bipolar transistors
08/06/1991US5038184 Thin film varactors
08/06/1991US5038183 Diode used in reference potential generating circuit for dram
08/06/1991US5037782 Method of making a semiconductor device including via holes
08/06/1991US5037776 Multilayer; one step
08/06/1991US5037770 Process for the production of a field effect transistor using a lanthanum arsenide contact layer
08/06/1991US5037769 Containing passivation film
08/06/1991US5037767 Method of manufacturing a semiconductor device by ion implantation through an ion-sensitive resist
08/06/1991US5037766 Method of fabricating a thin film polysilicon thin film transistor or resistor
08/06/1991US5037505 Depositing a layer of resin, masking, ethcing, depositing a layer of silica, masking and etching
07/1991
07/31/1991EP0439195A2 Method for fabricating a semiconductor device including a semi-insulating semiconductor layer
07/31/1991EP0439173A2 Process of fabricating field effect transistor with LDD structure
07/31/1991EP0439165A2 Field-effect transistor having a vertical structure and method of manufacturing the same
07/31/1991EP0439164A2 Field-effect transistor having a vertical structure and method of manufacturing the same
07/31/1991EP0439163A2 Semiconductor device having a high-frequency bipolar transistor
07/31/1991EP0439114A1 Compound semiconductor device having gate electrode self-aligned to source and drain electrodes and method of manufacturing the same
07/31/1991EP0439003A1 Crimp-type semiconductor device having non-alloy structure
07/31/1991EP0438959A2 Semiconductor device structure employing a multi-level epitaxial structure and a method of manufacturing same
07/31/1991EP0438700A1 Turn-off MOS-controlled power semiconductor device and method of making the same
07/31/1991EP0438693A2 Method of manufacturing semiconductor device
07/31/1991CN1013407B Vibrating type transducer and manufacturing process thereof
07/30/1991US5036382 Semiconductor device having a multi-level wiring structure
07/30/1991US5036378 Memory device
07/30/1991US5036377 Triac array
07/30/1991US5036375 Floating-gate memory cell with tailored doping profile
07/30/1991US5036374 Insulated gate semiconductor device using compound semiconductor at the channel
07/30/1991US5036373 Electric device with grains and an insulating layer
07/30/1991US5036372 Heterojunction avalanche transistor
07/30/1991US5036371 Multiple quantum well device
07/30/1991US5036370 Thin film semiconductor array device
07/30/1991US5036023 Rapid thermal processing method of making a semiconductor device
07/30/1991US5036019 Method of producing a complementary-type semiconductor device
07/30/1991US5036018 Metal Oxide Semiconductor Erasable Programmable Read-Only Memory Cells
07/30/1991US5036017 Method of making asymmetrical field effect transistor
07/30/1991US5036016 Very Large Scale Integrated Bipolar Transistor
07/30/1991US5035835 Modulatory molecular element
07/30/1991US5035488 Method of manufacturing liquid crystal devices having semiconductor switching elements
07/30/1991CA1287153C Vertically integrated photodetector-amplifier
07/25/1991WO1991011028A1 Thin, dielectrically isolated island resident transistor structure having low collector resistance
07/25/1991WO1991011027A1 Non-crystalline silicon active device for large-scale digital and analog networks
07/25/1991WO1991011026A1 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
07/25/1991WO1991011019A1 Bicmos process utilizing novel planarization technique
07/24/1991EP0438172A1 Semiconductor memory device having monitoring function
07/24/1991EP0438167A1 Semiconductor device having a charge transfer device, mosfets, and bipolar transistors -- all formed in a single semiconductor substrate
07/24/1991EP0438047A1 Microwave FET
07/24/1991EP0437939A1 Integratable DMOS transistor and method of making the same
07/24/1991EP0437702A2 Semiconductor integrated circuit of compound semiconductor devices comprising isolation regions and method of making the same
07/24/1991EP0437691A1 Three-terminal variable-conductance device
07/24/1991EP0210190B1 Controlled boron doping of silicon
07/23/1991US5034845 Integrated circuit apparatus including static electricity protection circuit
07/23/1991US5034798 Semiconductor device having a two-layer gate structure
07/23/1991US5034796 Simplified current sensing structure for MOS power devices
07/23/1991US5034792 Field-effect transistor
07/23/1991US5034791 Field effect semiconductor device and its manufacturing method
07/23/1991US5034790 MOS transistor with semi-insulating field plate and surface-adjoining top layer
07/23/1991US5034788 Semiconductor device with reduced side wall parasitic device action
07/23/1991US5034787 Structure and fabrication method for a double trench memory cell device
07/23/1991US5034786 Opaque cover for preventing erasure of an EPROM
07/23/1991US5034785 Planar vertical channel DMOS structure
07/23/1991US5034784 Diamond electric device on silicon
07/23/1991US5034783 Semiconductor device including cascadable polarization independent heterostructure
07/23/1991US5034782 Semiconductor commutator with grain boundary
07/23/1991US5034348 Process for forming refractory metal silicide layers of different thicknesses in an integrated circuit
07/23/1991US5034346 Method for forming shorting contact for semiconductor which allows for relaxed alignment tolerance
07/23/1991US5034340 Amorphous silicon thin film transistor array substrate and method for producing the same
07/23/1991US5034338 Circuit containing integrated bipolar and complementary MOS transistors on a common substrate
07/23/1991US5034336 Semiconductors
07/23/1991US5034335 Method of manufacturing a silicon on insulator (SOI) semiconductor device
07/23/1991CA1286800C Heterojunction bipolar transistors
07/23/1991CA1286799C Transistor
07/23/1991CA1286798C Device fabrication method involving deposition of metal-containing material and resulting devices
07/23/1991CA1286573C Controlled boron doping of silicon
07/18/1991DE4101130A1 MOSFET with source and drain regions - enclosed by opposite conductivity type basin layers
07/18/1991DE4000599A1 PN-junction device, esp. hetero-bi:polar transistor - with semi-insulating interlayer giving low parasitic capacitance
07/17/1991EP0437328A2 Reflective-type liquid crystal display device
07/17/1991EP0437306A2 Self-aligning contact and interconnect structure
07/17/1991EP0437194A2 Schottky barrier field effect transistor
07/17/1991EP0436988A2 A semiconductor device
07/17/1991EP0436912A1 Integrated circuit solder die-attach design and method
07/17/1991EP0436829A2 Quantum well structure
07/17/1991EP0436753A1 Method for fabricating a self-aligned base-emitter complex
07/17/1991EP0436588A1 Low stress polysilicon microstructures.
07/17/1991CA2024179A1 Superlattice precision voltage reference
07/16/1991US5033068 Charge transfer device
07/16/1991US5033023 High density EEPROM cell and process for making the cell
07/16/1991US5032893 Method for reducing or eliminating interface defects in mismatched semiconductor eiplayers
07/16/1991US5032888 Conductivity modulation buried gate trench type MOSFET
07/16/1991US5032887 Bipolar power semiconductor device and process for its manufacture
07/16/1991US5032886 High-frequency power transistor
07/16/1991US5032883 Thin film transistor and method of manufacturing the same
07/16/1991US5032882 Semiconductor device having trench type structure
07/16/1991US5032881 Asymmetric virtual ground EPROM cell and fabrication method
07/16/1991US5032880 Semiconductor device having an interposing layer between an electrode and a connection electrode
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