Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1991
09/03/1991US5045502 Annealing
09/03/1991US5045497 Method of making a schottky electrode
09/03/1991US5045496 Semi-insulating cobalt doped indium phosphide grown by MOCVD
09/03/1991US5045493 Vertical bipolar transistor
09/03/1991US5045491 Method of making a nonvolatile memory array having cells with separate program and erase regions
09/03/1991US5045490 Capacitive coupling
09/03/1991US5045488 Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
09/03/1991US5045487 Process for producing a thin film field-effect transistor
09/03/1991US5045486 Transistor fabrication method
09/03/1991US5045484 Fabrication method of a BIMOS semiconductor device
09/03/1991US5045408 Thermodynamically stabilized conductor/compound semiconductor interfaces
09/03/1991CA1288527C Method of manufacturing a semiconductor device having a contact opening derived from a doping opening
08/1991
08/29/1991DE4025640A1 Semiconductor EEPROM with matrix of memory cells - has first writing word line, and second one coupled to different memory cell
08/28/1991EP0443852A1 Lateral heterojunction bipolar transistor
08/28/1991EP0443610A2 Nonvolatile semiconductor memory device
08/28/1991EP0443603A2 Semiconductor device
08/28/1991EP0443515A2 Nonvolatile semiconductor device
08/28/1991EP0443348A2 Fine processing method using oblique metal deposition
08/28/1991EP0443326A2 Device having a charge transfer device, MOSFETs, and bipolar transistors -- all formed in a single semiconductor substrate
08/28/1991EP0443296A1 Process for obtaining multilayer metallization of the back of a semiconductor substrate
08/28/1991EP0443253A1 Self-aligned contact technology
08/28/1991EP0443252A2 Process for fabricating a bipolar transistor with a self-aligned contact
08/28/1991EP0242383B1 Protection of igfet integrated circuits from electrostatic discharge
08/27/1991US5043942 Nand cell type programmable read-only memory with common control gate driver circuit
08/27/1991US5043941 Non-volatile memory
08/27/1991US5043940 Flash EEPROM memory systems having multistate storage cells
08/27/1991US5043795 Semiconductor device
08/27/1991US5043790 For semiconductors or transistors
08/27/1991US5043787 Extremely small area npn lateral transistor
08/27/1991US5043786 Lateral transistor and method of making same
08/27/1991US5043781 MOS type
08/27/1991US5043779 Metal oxide semiconductor device with well region
08/27/1991US5043778 Oxide-isolated source/drain transistor
08/27/1991US5043777 Power FETS with improved high voltage performance
08/27/1991US5043298 Process for manufacturing a DRAM cell
08/27/1991US5043294 Method for manufacturing an FET with asymmetrical gate region
08/27/1991US5043293 Dual oxide channel stop for semiconductor devices
08/27/1991US5043219 Composite material
08/22/1991WO1991012497A1 Crystal-oriented motion sensor and process for manufacturing it
08/21/1991EP0442718A2 Method of manufacturing semiconductor device
08/21/1991EP0442560A1 Display device
08/21/1991EP0442491A2 Semiconductor device having a wiring pattern in which a plurality of lines are arranged in close proximity to one another
08/21/1991EP0442414A2 Compound semiconductor substrate and method of manufacturing the same
08/21/1991EP0442335A1 Semiconductor memory device including nonvolatile memory cells, enhancement type load transistors, and peripheral circuits having enhancement type transistors
08/21/1991EP0442296A2 A high speed silicon-on-insulator device and process of fabricating same
08/21/1991EP0442280A2 Method and apparatus for semiconductor chip transducer
08/21/1991EP0442203A1 A method of making ohmic low resistance W-SB contacts to III-V semiconductor materials
08/21/1991EP0442144A2 Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
08/21/1991EP0442123A1 Method for preparing electronic and electro-optical components and circuits based on conducting polymers
08/21/1991EP0442064A1 Input protection structure for integrated circuits
08/20/1991USRE33671 Interleaving wide bandgap semiconductor layers with narrow bandgap layers
08/20/1991US5042009 Method for programming a floating gate memory device
08/20/1991US5042008 Non-volatile semiconductor memory device having word lines ("control gates") embedded in substrate
08/20/1991US5041896 Symmetrical blocking high voltage semiconductor device and method of fabrication
08/20/1991US5041895 Mixed technology integrated device comprising complementary LDMOS power transistors, CMOS and vertical PNP integrated structures having an enhanced ability to withstand a relatively high supply voltage
08/20/1991US5041892 Homo-junction bipolar transistor having high base concentration and suitable for low temperature operation
08/20/1991US5041888 Insulator structure for amorphous silicon thin-film transistors
08/20/1991US5041886 Nonvolatile semiconductor memory device and manufacturing method thereof
08/20/1991US5041885 Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices
08/20/1991US5041884 Multilayer semiconductor integrated circuit
08/20/1991US5041882 Heterojunction bipolar transistor
08/20/1991US5041881 Whiskerless Schottky diode
08/20/1991US5041393 Forming galium arsenide heterojunction field-effect transistor by selective doping on multi epitaxial layer, annealing
08/14/1991EP0441734A2 Line protection circuit for an integrated services digital network
08/14/1991EP0441549A1 Matched pair of sensor and amplifier circuits
08/14/1991EP0441450A1 Process for manufacturing an integrated semiconductor device comprising the formation of a first contact electrode, encapsulated and provided with spacers, and a second contact electrode auto-aligned to the first
08/14/1991EP0441440A1 Charge-coupled device
08/14/1991EP0441392A2 MOS type semiconductor integrated circuit
08/14/1991EP0441390A2 Insulated-gate type integrated circuit
08/14/1991EP0441324A1 Semiconductor sensor
08/14/1991EP0441317A1 Bi-CMOS logic gate circuits for low-voltage semiconductor integrated circuits
08/14/1991EP0441259A2 Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same
08/14/1991EP0441156A1 Electron-wave coupled semiconductor switching device
08/14/1991EP0441024A2 Hydrogen plasma passivation of GaAs
08/14/1991EP0440924A1 Shorted GTO thyristor
08/14/1991CN1013536B Semiconductor heterostructures
08/13/1991US5040147 Nonvolatile semiconductor memory
08/13/1991US5040049 Aluminum layer, contact layer of hafnium, titanium or zirconium
08/13/1991US5040045 High voltage MOS transistor having shielded crossover path for a high voltage connection bus
08/13/1991US5040043 Power semiconductor device
08/13/1991US5040042 Bidirectional semiconductor component that can be turned off
08/13/1991US5040037 MOS type field effect transistor formed on a semiconductor layer on an insulator substrate
08/13/1991US5040036 Trench-isolated self-aligned split-gate EEPROM transistor and memory array
08/13/1991US5040034 Semiconductor device
08/13/1991US5040032 Semiconductor superlattice heterostructures on non-planar substrates
08/13/1991US5039958 Integrated semiconductor device including an insulated-gate field effect transistor biased to a constant level in order to produce a negative differential drain conductance zone
08/13/1991US5039624 Method of manufacturing a bipolar transistor
08/13/1991US5039623 Method of manufacturing a semiconductor device
08/13/1991US5039622 Doping
08/13/1991US5039621 Semiconductor over insulator mesa and method of forming the same
08/13/1991US5039578 For transistors, integrated circuits, lasers, light emitting diodes, photodetectors; efficient, high speed
08/08/1991WO1991011826A1 Mosfet structure having reduced gate capacitance and method of forming same
08/08/1991DE4003473A1 Kristallorientierter bewegungssensor und verfahren zu dessen herstellung Crystal-oriented motion sensor and process for its manufacture
08/08/1991CA2035852A1 Electronic component, especially a permeable base transistor and method of making same
08/07/1991EP0440394A2 Mosfet with substrate source contact
08/07/1991EP0440344A1 High frequency device
08/07/1991EP0440222A2 Ultraviolet-erasable type nonvolatile semiconductor memory device having asymmetrical field oxide structure
08/07/1991EP0440139A1 Hot electron transistor
08/07/1991EP0439899A2 Complementary bipolar transistors compatible with CMOS process
08/07/1991EP0439753A1 Bipolar transistor with improved low temperature current gain
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