Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/1991
09/24/1991US5051785 N-type semiconducting diamond, and method of making the same
09/24/1991US5051378 Method of thinning a semiconductor wafer
09/24/1991US5051373 Method of fabricating MMIC semiconductor integrated circuits using the RF and DC measurements of an active device on a substrate to design the passive elements, which are then E-beam written to the substrate
09/24/1991CA1289512C Depositing an electrical insulator with unidirectional gas flow in series of chambers
09/19/1991DE4107883A1 Semiconductor device - contains gate electrodes formed on insulation regions between impurity regions
09/18/1991EP0447327A2 Heterostructure semiconductor device
09/18/1991EP0446893A1 Method of manufacturing semiconducting devices having floating gates
09/18/1991EP0446532A2 Method of manufacturing semiconductor device
09/18/1991EP0446439A1 Thyristor having a light ignition structure with low reflection
09/18/1991EP0446438A2 Method of setting the voltage in a well-defined manner in semiconductor devices which withstand voltage-breakover firing and semiconductor devices having a well-defined breakover voltage
09/18/1991EP0149683B1 Method of manufacturing semiconductor devices
09/17/1991USRE33693 Device using ordered semiconductor alloy
09/17/1991US5050034 Pressure sensor and method of manufacturing same
09/17/1991US5049975 Multilayer structure; refractory silicide, nitride
09/17/1991US5049971 Monolithic high-frequency-signal switch and power limiter device
09/17/1991US5049968 Dielectrically isolated substrate and semiconductor device using the same
09/17/1991US5049967 Semiconductor integrated circuit device and a method for manufacturing the same
09/17/1991US5049965 Thyristor having adjustable breakover voltage and method of manufacture
09/17/1991US5049964 Bipolar transistor and method of manufacturing the same
09/17/1991US5049958 Stacked capacitors for VLSI semiconductor devices
09/17/1991US5049956 Memory cell structure of semiconductor memory device
09/17/1991US5049955 Semiconductor ballistic electron velocity control structure
09/17/1991US5049954 GaAs field effect semiconductor device having Schottky gate structure
09/17/1991US5049953 Schottky tunnel transistor device
09/17/1991US5049952 Thin film transistor for use in a flat plate display
09/17/1991US5049951 Superlattice field effect transistor with monolayer confinement
09/17/1991US5049543 Device and method of manufacturing a device
09/17/1991US5049525 Iterative self-aligned contact metallization process
09/17/1991US5049522 Semiconductive arrangement having dissimilar, laterally spaced layer structures, and process for fabricating the same
09/17/1991US5049516 Method of manufacturing semiconductor memory device
09/17/1991US5049515 Method of making a three-dimensional memory cell with integral select transistor
09/17/1991US5049514 Semiconductor with polysilicon on gate dielectric
09/17/1991US5049512 Method of forming a MOS field-effect transistor
09/17/1991US5049232 Lamination, alignment, cutting
09/17/1991CA1289271C Method of manufacturing devices including a semiconductor/dielectric interface
09/17/1991CA1289269C Method for fabricating semiconductor devices which include sources anddrains having metal-containing material regions and the resulting devices
09/17/1991CA1289267C Latchup and electrostatic discharge protection structure
09/17/1991CA1289266C Vertical trench transistor/capacitor memory cell
09/17/1991CA1289241C Imaging charge-coupled device having an all parallel output
09/11/1991EP0446125A1 Power semiconductor device
09/11/1991EP0445998A1 Diamond semiconductor devices
09/11/1991EP0445888A2 IGBT semiconductor device with high reverse breakdown voltage and related manufaturing process
09/11/1991EP0445756A1 High voltage MOS transistor and production method thereof, and semiconductor device having high voltage MOS transistor and production method thereof
09/11/1991EP0445725A1 FET having U-shaped gate electrode
09/11/1991EP0445475A2 Heterojunction bipolar transistor
09/11/1991EP0445382A2 Pressure transducer and its manufacturing method
09/11/1991EP0445323A1 Field effect semiconductor device having current paths formed in conductive layer of semiconductor substrate
09/10/1991US5047981 Bit and block erasing of an electrically erasable and programmable read-only memory array
09/10/1991US5047836 Temperature compensating contact to avoid misregistration
09/10/1991US5047832 Gold alloy layer
09/10/1991US5047831 Reduced resistance contact region for semiconductor device
09/10/1991US5047829 Monolithic p-i-n diode limiter
09/10/1991US5047828 PNP type lateral transistor with minimal substrate operation interference
09/10/1991US5047824 Reverse conducting gate turn-off thyristor
09/10/1991US5047823 Circuit structure having a lateral bipolar transistor and its method of manufacture
09/10/1991US5047820 Semi self-aligned high voltage P channel FET
09/10/1991US5047819 Amorphous-silicon thin film transistor array substrate
09/10/1991US5047818 Semiconductor memory device having buried structure to suppress soft errors
09/10/1991US5047817 Stacked capacitor for semiconductor memory device
09/10/1991US5047816 Self-aligned dual-gate transistor
09/10/1991US5047814 E2 PROM cell including isolated control diffusion
09/10/1991US5047813 Semiconductor device and method of manufacturing the same
09/10/1991US5047812 Insulated gate field effect device
09/10/1991US5047811 Field effect transistor with channel formed on homojunction interface
09/10/1991US5047810 Optically controlled resonant tunneling electronic devices
09/10/1991US5047661 Superlattice precision voltage reference
09/10/1991US5047365 Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth
09/10/1991US5047362 Method of making large-scale EPROM memory with a checker board pattern and an improved coupling factor
09/10/1991US5047361 NMOS transistor having inversion layer source/drain contacts
09/10/1991US5047360 Doped semiconductor and passivation layers
09/10/1991US5047357 Method for forming emitters in a BiCMOS process
09/10/1991US5047356 Low edge and back channel current leakages; doping oxidation, etching
09/10/1991US5047355 Semiconductor diode and method for making it
09/05/1991WO1991013466A1 High electron mobility transistor
09/05/1991WO1991013465A1 Electronic devices and methods of constructing and utilizing same
09/05/1991WO1991013459A1 Optically compensated bipolar transistor
09/04/1991EP0445059A2 Method for performing a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
09/04/1991EP0445008A1 Process for making high-density electronic devices
09/04/1991EP0444957A1 Semiconductor device having a reduced junction leakage
09/04/1991EP0444893A2 Method of making ohmic contacts between semiconductors and oxide superconductors
09/04/1991EP0444808A1 Lateral mos controlled thyristor
09/04/1991EP0444712A1 Multigate thin film transistor
09/04/1991EP0444580A2 Liquid crystal device and display apparatus
09/04/1991EP0444465A2 Controlled silicon doping of III-V compounds by thermal oxidation of silicon capping layer
09/04/1991EP0444134A1 Solid state, quantum mechanical, electron and hole wave devices
09/04/1991EP0422129A4 Enclosed buried channel transistor
09/03/1991US5045966 Method for forming capacitor using FET process and structure formed by same
09/03/1991US5045912 Bi-CMOS integrated circuit device having a high speed lateral bipolar transistor
09/03/1991US5045911 Lateral PNP transistor and method for forming same
09/03/1991US5045910 Integrated power transistor comprising means for reducing thermal stresses
09/03/1991US5045909 Power switching semiconductor device
09/03/1991US5045905 Amorphous silicon thin film transistor
09/03/1991US5045904 Semiconductor device including an improved trench arrangement
09/03/1991US5045903 Topographic pattern delineated power MOSFET with profile tailored recessed source
09/03/1991US5045902 VDMOS/logic integrated circuit comprising a vertical depleted MOS transistor and a zener diode and a method of making same
09/03/1991US5045901 Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions
09/03/1991US5045753 Matrix display apparatus with repair wires
09/03/1991US5045716 Integrated circuit in complementary circuit technology comprising a substrate bias voltage generator
09/03/1991US5045505 Method of processing substrate for a beveled semiconductor device
09/03/1991US5045504 Multilayer; tetraethioxy, then polysiloxane
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