Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1991
10/15/1991CA1290864C Transistor comprising a 2-dimensional carrier gas collector situated between emitter and gate
10/09/1991EP0450985A2 Diamond thin film transistor
10/09/1991EP0450941A2 An active matrix display device
10/09/1991EP0450691A1 Hot charge-carrier solid state device
10/09/1991EP0450614A1 Semiconductor device containing bipolar transistors
10/09/1991EP0450572A2 Sealed self aligned contact process and structure
10/09/1991EP0450503A2 Semiconductor devices with borosilicate glass sidewall spacers and method of fabrication
10/09/1991EP0450500A2 High performance semiconductor devices and their manufacture
10/09/1991EP0450432A1 Method of constructing lightly doped drain (LDD) integrated circuit structure and MOS integrated circuit structure
10/09/1991EP0450401A2 Method of manufacturing non-volatile semiconductor memory device
10/09/1991EP0450376A1 BiCMOS device having closely-spaced contacts and method of fabrication
10/09/1991EP0450306A1 High-speed diode and method for producing the same
10/09/1991EP0450283A1 SOI layout for low resistance gate
10/09/1991EP0450274A1 Semiconductor device having a space-charge region which is controllable by field effect and method of making the same
10/09/1991EP0450228A2 Semiconductor device formed on a silicon substrate or a silicon layer and methods of making the same
10/09/1991EP0450082A1 Insulated gate bipolar transistor
10/09/1991EP0450077A1 Thin-film electroluminescent element and method of manufacturing the same
10/09/1991EP0449951A1 Ultra-fast high temperature rectifying diode formed in silicon carbide.
10/09/1991EP0449858A1 High-voltage transistor arrangement produced by cmos technology.
10/08/1991US5055905 Semiconductor device
10/08/1991US5055903 Circuit for reducing the latch-up sensitivity of a cmos circuit
10/08/1991US5055900 Trench-defined charge-coupled device
10/08/1991US5055899 Thin film transistor
10/08/1991US5055898 DRAM memory cell having a horizontal SOI transfer device disposed over a buried storage node and fabrication methods therefor
10/08/1991US5055897 Semiconductor cell for neural network and the like
10/08/1991US5055896 Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability
10/08/1991US5055895 Double-diffused metal-oxide semiconductor field effect transistor device
10/08/1991US5055891 Heterostructure transistor using real-space electron transfer
10/08/1991US5055890 Nonvolatile semiconductor memory having three dimension charge confinement
10/08/1991US5055889 Lateral varactor with staggered punch-through and method of fabrication
10/08/1991US5055888 Zener diodes in a linear semiconductor device
10/08/1991US5055887 Fet with a super lattice channel
10/08/1991US5055424 Method for fabricating ohmic contacts on semiconducting diamond
10/08/1991US5055421 Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons
10/08/1991US5055420 Process for fabricating semiconductor integrated circuit devices
10/08/1991US5055419 Polycrystalline silicon emitters; oxidized sidewall
10/08/1991US5055417 Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells
10/08/1991US5054887 Active matrix type liquid crystal display
10/08/1991US5054683 Method of bonding together two bodies with silicon oxide and practically pure boron
10/08/1991CA1290466C Process for fabricating complementary contactless vertical bipolar transistors
10/08/1991CA1290463C Mos memory cell with exponentially-profiled doping and offset floating gate tunnel oxidation
10/03/1991WO1991015030A1 Staircase sidewall spacer for improved source/drain architecture
10/02/1991EP0449620A2 Semiconductor devices having a silicon/silicon-germanium heterostructure and methods of making the same
10/02/1991EP0449598A2 Thin film semiconductor device
10/02/1991EP0449588A1 A method of driving a thin film transistor type optical sensor and the drive unit
10/02/1991EP0449585A1 Thin film semiconductor device
10/02/1991EP0449539A2 Ohmic contact for thin film transistor
10/02/1991EP0449418A2 Insulated gate field effect device with a curved channel and method of fabrication
10/02/1991EP0449404A1 Method of manufacturing a thin-film semiconductor device on a transparent insulative substrate
10/02/1991EP0449351A1 Circuit element with elimination of kink effect
10/02/1991EP0449229A2 Semiconductor device using a particular orientation of crystalline planes
10/02/1991EP0449123A2 Liquid crystal display device
10/02/1991EP0449093A1 Circuital arrangement for preventing latch-up phenomena in vertical PNP transistors with insulated collector
10/02/1991EP0448981A2 High electron mobility transistor
10/02/1991EP0448861A1 Semiconductor integrated circuit device
10/02/1991EP0448713A1 Semiconductor device
10/02/1991DE4110371A1 EEPROM of NAND cell type - has memory cell transistors determining number of cell units with preset number of transistors in series
10/02/1991DE4039103A1 Bipolar semiconductor module with delta doping planes - fitted in semiconductor carrier and sequentially arranged in growth direction
10/02/1991CN1055084A Charge-coupled device
10/01/1991US5054030 Grid-inserted quantum structure
10/01/1991US5053917 Thin film capacitor and manufacturing method thereof
10/01/1991US5053854 Semiconductor components
10/01/1991US5053849 Transistor with overlapping gate/drain and two-layered gate structures
10/01/1991US5053848 Apparatus for providing single event upset resistance for semiconductor devices
10/01/1991US5053847 Semiconductor device
10/01/1991US5053846 Semiconductor bipolar device with phosphorus doping
10/01/1991US5053845 Thin-film device
10/01/1991US5053842 Semiconductor nonvolatile memory
10/01/1991US5053841 Nonvolatile semiconductor memory
10/01/1991US5053840 Semiconductor device having a gate electrode consisting of a plurality of layers
10/01/1991US5053839 Floating gate memory cell and device
10/01/1991US5053838 Power integrated circuit
10/01/1991US5053743 High voltage spiral resistor
10/01/1991US5053354 Method of fabricating a reverse staggered type silicon thin film transistor
10/01/1991US5053352 Method of forming an integrated circuit with pn-junction capacitor
10/01/1991US5053350 Method of making trench MOSFET capacitor cell for analog signal processing
10/01/1991US5053348 Fabrication of self-aligned, t-gate hemt
10/01/1991US5053347 Amorphous silicon thin film transistor with a depletion gate
10/01/1991US5053346 Method for making a high speed gallium arsenide transistor
10/01/1991US5052102 Laser induced electrical connection of integrated circuits
10/01/1991CA1290079C Vertical bipolar transistor
09/1991
09/29/1991CA2038960A1 Circuit element with elimination of kink effect
09/25/1991EP0448374A1 Method for fabricating a semiconductor device having a capacitor with polycrystalline silicon having micro roughness on the surface
09/25/1991EP0448307A1 Method of producing a MESFET
09/25/1991EP0448269A2 Interface circuit provided between a compound semiconductor logic circuit and a bipolar transistor circuit
09/25/1991EP0448268A2 Semiconductor luminescent device having organic/inorganic junction
09/25/1991EP0448119A2 Input protection resistor used in input protection circuit
09/25/1991EP0447917A2 Charge transfer device
09/25/1991EP0447856A1 Nonvolatile semiconducteur memory
09/25/1991EP0447840A2 Compound semiconducteur device manufacturing process and a compound semiconducteur device manufactured by the same
09/24/1991US5051953 EEPROM device including read, write, and erase voltage switching circuits
09/24/1991US5051808 Semiconductor device with low inductance of wirings connecting individual elements of the device
09/24/1991US5051806 Gate turn-off thyristor of multi-emitter type
09/24/1991US5051805 Sub-micron bipolar devices with sub-micron contacts
09/24/1991US5051800 Thin film semiconductor device and liquid crystal display apparatus using thereof
09/24/1991US5051795 EEPROM with trench-isolated bitlines
09/24/1991US5051794 Non-volatile semiconductor memory device and method for manufacturing the same
09/24/1991US5051793 Coplanar flash EPROM cell and method of making same
09/24/1991US5051791 Apparatus comprising refractive means for elections
09/24/1991US5051786 Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
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