Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1991
10/30/1991EP0454319A1 N-channel clamp for ESD protection in self-aligned silicided CMOS process
10/30/1991EP0454248A1 Integrated circuit comprising a multiple collector lateral transistor
10/30/1991EP0454201A2 A semiconductor device comprising a thyristor
10/30/1991EP0454051A2 Program element for use in redundancy technique for semiconductor memory device, and method of fabricating a semiconductor memory device having the same
10/30/1991EP0454020A2 Semiconductor memory device and method of manufacturing the same
10/30/1991EP0453945A1 Heterojunction bipolar transistor
10/29/1991US5061983 Semiconductor device having a metal silicide layer connecting two semiconductors
10/29/1991US5061982 VLSI triple-diffused polysilicon bipolar transistor structure
10/29/1991US5061981 Double diffused CMOS with Schottky to drain contacts
10/29/1991US5061975 MOS type field effect transistor having LDD structure
10/29/1991US5061973 Semiconductor heterojunction device with graded bandgap
10/29/1991US5061972 Fast recovery high temperature rectifying diode formed in silicon carbide
10/29/1991US5061970 Energy band leveling modulation doped quantum well
10/29/1991US5061652 Epitaxially growing three layers, each having a different dopant concentration, on a doped substrate, then isolating a device in the second layer using a dielectric
10/29/1991US5061649 Field effect transistor with lightly doped drain structure and method for manufacturing the same
10/29/1991US5061648 Method of fabricating a thin-film transistor
10/29/1991US5061647 Forming a conductive layer over a substrate having a gate dielectric, depositiong a work function adjusting material and etching to form an inverse-t-lightly-doped-drain
10/29/1991US5061645 Method of manufacturing a bipolar transistor
10/29/1991US5060526 Laminated semiconductor sensor with vibrating element
10/29/1991CA1291579C Method of isolating functional regions of an integrated circuit
10/29/1991CA1291577C Structure and process for fabricating complementary vertical transistormemory cell
10/29/1991CA1291567C Charged-coupled device with diode cut-off input
10/29/1991CA1291566C Semiconductor device
10/24/1991DE4033141A1 Construction of MOS integrated circuit for use at low temperature - has depletion transistors with gate-electrode which has low work function and enhancement devices using high work function material
10/23/1991EP0453324A2 Active matrix display device with thin film transistors structure
10/23/1991EP0453169A2 Method of forming a mask and a thin-film transistor
10/23/1991EP0453070A2 Method of manufacturing an intelligent power semiconductor device
10/23/1991EP0453026A2 Process for forming a buried drain or collector region in monolithic semiconductor devices
10/23/1991EP0452950A2 Semiconductor device using whiskers and manufacturing method of the same
10/23/1991EP0452910A2 Semiconductor device having a structure for accelerating carriers
10/23/1991EP0452874A2 MOS semiconductor device
10/23/1991EP0452869A1 Method of making a semiconductor device.
10/23/1991EP0452829A2 Semiconductor device with reduced time-dependent dielectric failures
10/23/1991EP0452817A1 Semiconductor device with MOS-transistors and method of manufacturing the same
10/23/1991EP0452741A2 Application of electronic properties of germanium to inhibit n-type or p-type dopant diffusion in silicon
10/23/1991EP0452495A1 Misfet and method of producing the same
10/22/1991US5060234 Injection laser with at least one pair of monoatomic layers of doping atoms
10/22/1991US5060195 Hot electron programmable, tunnel electron erasable contactless EEPROM
10/22/1991US5060110 High frequency MOSCAP
10/22/1991US5060051 Semiconductor device having improved electrode pad structure
10/22/1991US5060050 Semiconductor integrated circuit device
10/22/1991US5060047 High voltage semiconductor device
10/22/1991US5060043 Semiconductor wafer with notches
10/22/1991US5060038 Charge sweep solid-state image sensor
10/22/1991US5060036 Thin film transistor of active matrix liquid crystal display
10/22/1991US5060035 Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
10/22/1991US5060033 Semiconductor device and method of producing semiconductor device
10/22/1991US5060032 Insulated gate transistor operable at a low-drain-source voltage
10/22/1991US5060031 Integrated circuits; lower gate leakage
10/22/1991US5060030 Pseudomorphic HEMT having strained compensation layer
10/22/1991US5060029 Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same
10/22/1991US5059821 Bi-CMOS driver with two CMOS predrivers having different switching thresholds
10/22/1991US5059677 Polyimide resin and insulating film for electric and electronic devices
10/22/1991US5059555 Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer
10/22/1991US5059549 Method of manufacturing a bi-mos device with a polycrystalline resistor
10/22/1991US5059547 Single crystal silicon substrate, overcoating of silicon oxide
10/22/1991US5059545 Semiconductor
10/22/1991US5059544 Method of forming bipolar transistor having self-aligned emitter-base using selective and non-selective epitaxy
10/17/1991WO1991015874A1 Cold cathode field emission device having integral control or controlled non-fed devices
10/17/1991DE4112084A1 Reverse blocking thyristor for control of electronic flash - easily blocks and unblocks flash in reaction to gate-switching of cascode-connected N=channel MOSFET
10/17/1991DE4112072A1 Metal insulated semiconductor transistor - has offset zone partially overlapped by double offset zone of opposite type
10/17/1991DE4112045A1 Semiconductor component e.g. MOS LDD type transistor - has element separating insulating layer which surrounds active region at peripherally identical height on main substrate surface
10/17/1991DE4012080A1 Verfahren zum aufbau von mikromechanischen sensoren A method for building of micro-mechanical sensors
10/16/1991EP0452054A1 HEMT structure with passivated structure
10/16/1991EP0452035A1 Semiconductor variable capacitance diode
10/16/1991EP0451992A2 Detection of vibrations of a microbeam through a shell
10/16/1991EP0451973A2 A transistor logical circuit
10/16/1991EP0451968A1 Process for manufacturing thin film transistor
10/16/1991EP0451904A1 A semiconductor device
10/16/1991EP0451636A1 Foil strain gauge and transducer for using it
10/16/1991EP0451454A2 Semiconductor device having element regions being electrically isolated from each other
10/16/1991EP0451423A1 Vertical isolated-collector PNP transistor structure
10/16/1991EP0451389A1 Nonvolatile semiconductor memory and method of making same
10/16/1991EP0451377A1 Non-linear resistance element
10/16/1991EP0451286A1 Integrated circuit device
10/16/1991EP0408653A4 Gate dielectric for a thin film field effect transistor
10/16/1991CN2086937U Bolt-type internally pressure-welded crystal thyratron
10/16/1991CN1014382B Electronic device utilizing superconducting materials
10/16/1991CN1014381B Large area fransducer array electrostatic disckarge protection circuit
10/15/1991US5057899 Semiconductor device with improved wiring contact portion
10/15/1991US5057896 Semiconductor device and method of producing same
10/15/1991US5057889 Electronic device including thin film transistor
10/15/1991US5057886 Non-volatile memory with improved coupling between gates
10/15/1991US5057885 Memory cell system with first and second gates
10/15/1991US5057884 Semiconductor device having a structure which makes parasitic transistor hard to operate
10/15/1991US5057883 Permeable base transistor with gate fingers
10/15/1991US5057882 Thermally optimized interdigitated transistor
10/15/1991US5057880 Semiconductor device having a heteroepitaxial substrate
10/15/1991US5057879 Noise reduction technique for breakdown diodes
10/15/1991US5057878 Insulator of organic material
10/15/1991US5057458 Combination of a support and a semiconductor body and method of manufacturing such a combination
10/15/1991US5057455 Formation of integrated circuit electrodes
10/15/1991US5057454 Thin alloy film of gold and beryllium and metal film of nickel, chromium, molybdenum or platinum; heat treatment
10/15/1991US5057447 Silicide/metal floating gate process
10/15/1991US5057446 Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
10/15/1991US5057445 Method of making a high-voltage, low on-resistance igfet
10/15/1991US5057443 Method for fabricating a trench bipolar transistor
10/15/1991US5057440 Different diffusion concentration
10/15/1991US5057183 Process for preparing epitaxial II-VI compound semiconductor
10/15/1991CA1290865C Hot electron transistor
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