Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1991
11/27/1991EP0458570A1 Diode and semiconductor device having such a diode
11/27/1991EP0458530A2 Method of fabricating a Schottky junction using diamond
11/27/1991EP0458407A2 Sampling an analogue signal voltage
11/27/1991EP0458381A2 A semiconductor device comprising a high voltage MOS transistor having shielded crossover path for a high voltage connection bus
11/27/1991EP0458353A2 Ohmic contact electrodes for n-type semiconductor cubic boron nitride
11/27/1991EP0458238A2 Cell array of a non-volatile semiconductor memory device
11/26/1991US5068827 Method of applying a program voltage for a non-volatile semiconductor memory and apparatus for implementing the same
11/26/1991US5068712 Semiconductor device
11/26/1991US5068710 Semiconductor device with multilayer base contact
11/26/1991US5068709 Semiconductor device having a backplate electrode
11/26/1991US5068704 Method of manufacturing semiconductor device
11/26/1991US5068703 Electronic circuit device
11/26/1991US5068700 Lateral conductivity modulated mosfet
11/26/1991US5068699 Thin film transistor for a plate display
11/26/1991US5068696 Programmable interconnect or cell using silicided MOS transistors
11/26/1991US5068203 Method for forming thin silicon membrane or beam
11/26/1991US5068200 Dynamic Random Access Memory
11/26/1991US5067233 Method of forming an integrated circuit module
11/26/1991CA1292550C Epitaxial gallium arsenide semiconductor wafer and method of producing the same
11/21/1991EP0457670A1 Method of manufacturing an active matrix display with storage capacitors and display obtained by the method
11/21/1991EP0457601A2 Thin film semi-conductor device and method of producing same
11/21/1991EP0457508A2 Diamond semiconductor device
11/21/1991EP0457434A1 MOS thin film transistor having a drain offset region
11/21/1991EP0457311A2 Semiconductor memory cell
11/21/1991EP0457271A2 A charge transfer device
11/21/1991EP0457270A2 Floating diffusion type charge detection circuit for use in charge transfer device
11/21/1991EP0456825A1 Semiconductive structures, methods for controlling their conductivity and sensitive elements based on those semiconductive structures
11/19/1991US5067108 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
11/19/1991US5067000 Semiconductor device having field shield isolation
11/19/1991US5066992 Programmable and erasable MOS memory device
11/19/1991US5066991 Semiconductor diode and method
11/19/1991US5066874 Signal output circuit having bipolar transistor in output stage and arranged in cmos semiconductor integrated circuit
11/19/1991US5066604 Method for manufacturing a semiconductor device utilizing a self-aligned contact process
11/19/1991US5066603 Method of manufacturing static induction transistors
11/19/1991US5066106 Liquid crystal display device having redundant buses
11/19/1991CA1292327C Resistive field shields for high voltage devices
11/16/1991CA2042427A1 Method for embodying an active matrix display screen with storage capacitors and screen obtained by this method
11/15/1991CA2042467A1 Method of making heterojunction bipolar transistor
11/14/1991WO1991017570A1 Insulated gate bipolar transistor
11/14/1991WO1991017569A1 Superconducting-semiconducting circuits, devices and systems
11/14/1991WO1991017471A1 Optical valve device
11/14/1991DE4114349A1 Bipolar transistor with insulated gate - has drain zone with inset zone of high impregnation concn.
11/13/1991EP0456319A2 Floating gate field effect transistor structure and method for manufacturing the same
11/13/1991EP0456256A2 Method of manufacturing nonvolatile semiconductor memory device
11/13/1991EP0456241A2 Charge detection circuit for use in charge transfer device
11/13/1991EP0456190A1 Piezoresistive accelerometer
11/13/1991EP0456059A1 Thin-film-transistor having Schottky barrier
11/13/1991EP0455832A1 Ohmic electrode of n-type cubic boron nitride and method of forming the same
11/13/1991CN1056187A Method for photolithographically forming self-aligned mask using back-side exposure and non-specular reflecting layer
11/12/1991US5065364 Apparatus for providing block erasing in a flash EPROM
11/12/1991US5065362 Non-volatile ram with integrated compact static ram load configuration
11/12/1991US5065219 Semiconductor device and fabrication method thereof
11/12/1991US5065216 Semiconductor integrated circuit having interconnection with improved design flexibility, and method of production
11/12/1991US5065213 Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process
11/12/1991US5065212 Semiconductor device
11/12/1991US5065211 Thyristor having cathode shorts
11/12/1991US5065210 Lateral transistor structure for bipolar semiconductor integrated circuits
11/12/1991US5065209 Bipolar transistor fabrication utilizing CMOS techniques
11/12/1991US5065204 Magnetoelectric element and magnetoelectric apparatus
11/12/1991US5065203 Trench structured charge-coupled device
11/12/1991US5065202 Amorphous silicon thin film transistor array substrate and method for producing the same
11/12/1991US5065201 Semiconductor memory device
11/12/1991US5065200 Geometry dependent doping and electronic devices produced thereby
11/12/1991US5065132 Programmable resistor and an array of the same
11/12/1991US5065044 Method for driving a pnpn semiconductor device
11/12/1991US5064779 Thermal decomposition of silane, plasma, vapor deposition
11/12/1991US5064777 Fabrication method for a double trench memory cell device
11/12/1991US5064775 Dopant migration is controlled during high temperture process
11/12/1991US5064773 Method of forming bipolar transistor having closely spaced device regions
11/12/1991US5064772 Bipolar transistor integrated circuit technology
11/12/1991US5064630 Zeolite l preparation
11/12/1991US5064165 Semiconductor transducer or actuator utilizing corrugated supports
11/12/1991CA1291926C Semi-insulating group iii-v based compositions doped using bis arene titanium sources
11/10/1991CA2042069A1 Power transistor device having ultra deep increased concentration region
11/06/1991EP0455483A2 Low parasitic FET topology for power and low noise GaAs FETs
11/06/1991EP0455325A1 Single crystals of semi-insulating indium phosphide and processes for making them
11/06/1991CN1056018A Power semiconductor device
11/05/1991USH986 Field effect-transistor with asymmetrical structure
11/05/1991US5063581 Semiconductor imaging device having a plurality of photodiodes and charge coupled devices
11/05/1991US5063436 Pressure-contacted semiconductor component
11/05/1991US5063435 Semiconductor device
11/05/1991US5063431 Silicon oxynitride, silicon oxide
11/05/1991US5063428 Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone
11/05/1991US5063425 Semiconductor memory device with capacitor over non-volatile memory cell gate structure
11/05/1991US5063424 Uprom memory cell integrable with a tablecloth matrix eprom
11/05/1991US5063423 Semiconductor memory device of a floating gate tunnel oxide type
11/05/1991US5063422 Devices having shallow junctions
11/05/1991US5063307 Insulated gate transistor devices with temperature and current sensor
11/05/1991US5063176 Fabrication of contact hole using an etch barrier layer
11/05/1991US5063172 Covering substrate with floating electroconductive barrier which is insulated from it by dielectric
11/05/1991US5063171 Method of making a diffusionless virtual drain and source conductor/oxide semiconductor field effect transistor
11/05/1991US5063168 Process for making bipolar transistor with polysilicon stringer base contact
11/05/1991US5063167 Method of producing a bipolar transistor with spacers
11/05/1991US5063113 Substrate having semiconductor-on-insulator structure with gettering sites and production method thereof
10/1991
10/31/1991WO1991016731A1 Semiconductor device having ferroelectric material and method of producing the same
10/31/1991WO1991016730A1 Insulated gate bipolar transistor
10/31/1991WO1991016608A1 Process for manufacturing mechanical micro-structures
10/31/1991WO1991016604A1 Process for manufacturing micro-mechanical sensors
10/30/1991EP0454579A2 Non-volatile semiconductor memory device having EEPROM cell, dummy cell and sense circuit for increasing reliability and enabling one-bit operation
10/30/1991EP0454343A2 Logic element and article comprising the element