| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) | 
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| 12/18/1991 | EP0461967A2 Schottky junction semiconductor device for microwave amplification and fast logic circuits, and method of making the same | 
| 12/18/1991 | EP0461955A1 Method for autoaligning metal contacts on a semiconductor device and autoaligned semiconductor | 
| 12/18/1991 | EP0461879A2 Semiconductor device having an isolating groove and method of making the same | 
| 12/18/1991 | EP0461877A2 Structure for preventing electric field concentration in semiconductor device | 
| 12/18/1991 | EP0461867A2 Quantum electron device based on refraction of electron waves | 
| 12/18/1991 | EP0461807A2 MESFET and manufacturing method therefor | 
| 12/18/1991 | EP0461764A2 EPROM virtual ground array | 
| 12/18/1991 | EP0461650A1 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device | 
| 12/18/1991 | EP0461376A1 Modulation doped base heterojunction bipolar transistor | 
| 12/18/1991 | EP0461362A2 Process for preparing a thin film semiconductor device | 
| 12/18/1991 | EP0386152A4 Millimeter wave imaging device | 
| 12/18/1991 | EP0281597B1 Nonvolatile memory cell array | 
| 12/18/1991 | EP0238671B1 Semiconductor device | 
| 12/18/1991 | EP0169241B1 Method for forming hermetically sealed electrical feedthrough conductors | 
| 12/18/1991 | EP0120918B1 An aluminum-metal silicide interconnect structure for integrated circuits and method of manufacture thereof | 
| 12/18/1991 | CN1057131A Semiconductor device having improved insulator gate type transistor | 
| 12/17/1991 | US5073893 Semiconductor structure and semiconductor laser device | 
| 12/17/1991 | US5073815 Semiconductor substrate and method for producing the same | 
| 12/17/1991 | US5073813 Semiconductor device having buried element isolation region | 
| 12/17/1991 | US5073812 Heterojunction bipolar transistor | 
| 12/17/1991 | US5073811 Integratable power transistor with optimization of direct secondary breakdown phenomena | 
| 12/17/1991 | US5073810 Semiconductor integrated circuit device and manufacturing method thereof | 
| 12/17/1991 | US5073698 Method for selectively heating a film on a substrate | 
| 12/17/1991 | US5073520 Method of making a semiconductor device | 
| 12/17/1991 | US5073519 Method of fabricating a vertical FET device with low gate to drain overlap capacitance | 
| 12/17/1991 | US5073514 Method of manufacturing mis semiconductor device | 
| 12/17/1991 | US5073513 Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate | 
| 12/17/1991 | US5073512 Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region | 
| 12/17/1991 | US5073511 Forming a thin buffer layer by doping and diffusing P-type dopent in a semiconductor layer | 
| 12/17/1991 | US5073508 Method of manufacturing an integrated semiconductor circuit including a bipolar heterojunction transistor and/or buried resistors | 
| 12/17/1991 | CA1293334C Method of manufacturing semiconductor device with overvoltage self-protection | 
| 12/16/1991 | CA2044557A1 Electronic component and method of making same | 
| 12/15/1991 | WO1991020096A1 Gated base controlled thyristor | 
| 12/15/1991 | CA2085250A1 Gated base controlled thyristor | 
| 12/12/1991 | WO1991019322A1 Method of manufacturing semiconductor device | 
| 12/12/1991 | WO1991019321A1 Method of manufacturing semiconductor device | 
| 12/11/1991 | EP0460918A2 Semiconductor device having improved insulated gate type transistor | 
| 12/11/1991 | EP0460793A1 Buried channel heterojunction field effect transistor | 
| 12/11/1991 | EP0460785A1 Semiconductor device having a heat sink | 
| 12/11/1991 | EP0460648A2 Programming circuit for use in nonvolatile semiconductor memory device | 
| 12/11/1991 | EP0460605A1 Thin film transistor and method of manufacturing it | 
| 12/11/1991 | EP0460531A1 Contact metallisation on semiconductor material | 
| 12/11/1991 | EP0460429A2 Method of making heterojunction bipolar transistor | 
| 12/11/1991 | EP0460356A2 Contacts to semiconductors having zero resistance | 
| 12/11/1991 | EP0460285A2 Process for manufacturing bipolar transistors with an extremely reduced base-collector capacitance | 
| 12/11/1991 | EP0460251A1 Method of fabricating a power-MISFET | 
| 12/11/1991 | CN1056954A Electrode for semiconductor element and semiconductor device having electrode and process for producing same | 
| 12/10/1991 | US5072312 Thyristor with high positive and negative blocking capability | 
| 12/10/1991 | US5072287 Semiconductor device and method of manufacturing the same | 
| 12/10/1991 | US5072277 Semiconductor device with gradually varying doping levels to compensate for thickness variations | 
| 12/10/1991 | US5072276 Elevated CMOS | 
| 12/10/1991 | US5072275 Small contactless RAM cell | 
| 12/10/1991 | US5072274 Semiconductor integrated circuit having interconnection with improved design flexibility | 
| 12/10/1991 | US5072271 Protection circuit for use in semiconductor integrated circuit device | 
| 12/10/1991 | US5072269 Dynamic ram and method of manufacturing the same | 
| 12/10/1991 | US5072268 MOS gated bipolar transistor | 
| 12/10/1991 | US5072267 Complementary field effect transistor | 
| 12/10/1991 | US5072266 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry | 
| 12/10/1991 | US5072265 P-channel insulation gate type bipolar transistor | 
| 12/10/1991 | US5072264 Diamond transistor and method of manufacture thereof | 
| 12/10/1991 | US5072262 Electric-electronic device including polyimide thin film | 
| 12/10/1991 | US5072122 Zinc, cadmium, selenium intermetallic | 
| 12/10/1991 | US5071790 Multilayer; forming doped glass, oxynitride, metal electrode | 
| 12/10/1991 | US5071782 Reduced cell area and channel length | 
| 12/10/1991 | US5071780 Reverse self-aligned transistor integrated circuit | 
| 12/10/1991 | US5071779 Liquid crystal displays | 
| 12/10/1991 | US5071778 Self-aligned collector implant for bipolar transistors | 
| 12/10/1991 | US5071733 Irradiating built-up polymer layers, dissolving irradiated portions; heat, chemical resistance, mechanical properties | 
| 12/04/1991 | EP0459882A2 Adjustable high frequency device | 
| 12/04/1991 | EP0459836A2 Method for fabricating thin-film transistors | 
| 12/04/1991 | EP0459773A2 Semiconductor device and method for producing the same | 
| 12/04/1991 | EP0459771A2 Electrode for semiconductor device and method for producing the same | 
| 12/04/1991 | EP0459770A2 Method for producing a semiconductor device with gate structure | 
| 12/04/1991 | EP0459763A1 Thin-film transistors | 
| 12/04/1991 | EP0459578A2 A monolithic semiconductor device and associated manufacturing process | 
| 12/04/1991 | EP0459398A2 Manufacturing method of a channel in MOS semiconductor devices | 
| 12/04/1991 | EP0459164A2 Erasable programmable memory | 
| 12/04/1991 | EP0459122A2 Epitaxial silicon layer and method to deposit such | 
| 12/04/1991 | EP0459029A1 Heterostructure transistor using real-space electron transfer | 
| 12/04/1991 | EP0424394A4 Means for reducing damage to jfets from electrostatic discharge events | 
| 12/04/1991 | CN1015037B Integrated bipolar and cmos transistor fabrication process | 
| 12/03/1991 | US5070387 Semiconductor device comprising unidimensional doping conductors and method of manufacturing such a semiconductor device | 
| 12/03/1991 | US5070386 Phosphorus silicon nitride layer and phosphorus silicate glass layer permits hydrogen gas to diffuse out | 
| 12/03/1991 | US5070385 Ferroelectric non-volatile variable resistive element | 
| 12/03/1991 | US5070382 Semiconductor structure for high power integrated circuits | 
| 12/03/1991 | US5070381 High voltage lateral transistor | 
| 12/03/1991 | US5070380 Transfer gate for photodiode to CCD image sensor | 
| 12/03/1991 | US5070379 Thin-film transistor matrix for active matrix display panel with alloy electrodes | 
| 12/03/1991 | US5070378 Eprom erasable by uv radiation having redundant circuit | 
| 12/03/1991 | US5070377 Semiconductor device and method of manufacturing the same | 
| 12/03/1991 | US5070376 Semiconductor device | 
| 12/03/1991 | US5070375 Semiconductor device having a coupled quantum box array structure | 
| 12/03/1991 | US5070182 Cyclobutanetetracarboxylic acid monomer | 
| 12/03/1991 | US5070035 Heat treatment, indium phosphide | 
| 12/03/1991 | US5070032 Conductive strips, isolated floating gates | 
| 12/03/1991 | US5070030 Method of making an oxide isolated, lateral bipolar transistor | 
| 12/03/1991 | US5070028 Method for manufacturing bipolar transistors having extremely reduced base-collection capacitance | 
| 12/03/1991 | US5069747 Creation and removal of temporary silicon dioxide structures on an in-process integrated circuit with minimal effect on exposed, permanent silicon dioxide structures | 
| 12/03/1991 | CA1292809C Detector and mixer diode operative at zero bias voltage and fabrication process therefor | 
| 11/28/1991 | WO1991018417A1 Integrated circuit power device with automatic removal of defective devices |