| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/04/1992 | US5086007 Masking in a single step to produce transistors having reduced spacing; accuracy |
| 02/04/1992 | US5086006 Semiconductor device and method of production |
| 02/04/1992 | US5086005 Bipolar transistor and method for manufacturing the same |
| 02/02/1992 | CA2048201A1 Process for forming a mes electrodes |
| 01/29/1992 | EP0468938A2 Memory cell matrix and fabrication process |
| 01/29/1992 | EP0468901A1 Method of fabricating an EPROM memory with a different structure for source and drain |
| 01/29/1992 | EP0468758A1 Method of forming insulating films, capacitances, and semiconductor devices |
| 01/29/1992 | EP0468711A2 Matrix-addressed type display device |
| 01/29/1992 | EP0468709A2 Semiconductor device including cascadable polarization independent heterostructure |
| 01/29/1992 | EP0468630A2 Method of increasing the breakdown voltage of a MOS transistor without changing the fabrication process |
| 01/29/1992 | EP0468382A1 Electric conductor material for solar cell |
| 01/29/1992 | EP0468271A1 Bipolar transistor and method of manufacture |
| 01/29/1992 | EP0468136A2 Contact structures for semiconductor devices and method for their manufacture |
| 01/29/1992 | EP0468098A2 Method of manufacturing pressure transducers |
| 01/29/1992 | EP0468067A1 Yarn for use in setup |
| 01/28/1992 | US5084751 Bipolar transistor |
| 01/28/1992 | US5084750 Multilayer |
| 01/28/1992 | US5084745 Semiconductor memory device having a floating gate |
| 01/28/1992 | US5084744 Field effect transistor with active layer apart from guard-ring |
| 01/28/1992 | US5084743 High current, high voltage breakdown field effect transistor |
| 01/28/1992 | US5084633 Bidirectional current sensing for power MOSFETS |
| 01/28/1992 | US5084437 Technetium cuprate as a superconductor and buffer multilayer element |
| 01/28/1992 | US5084415 Adhesive layer on dielectric |
| 01/28/1992 | US5084410 Method of manufacturing semiconductor devices |
| 01/28/1992 | US5084403 Contact hole |
| 01/28/1992 | US5084402 Bipolar transistor |
| 01/28/1992 | US5084401 Stroboscope |
| 01/28/1992 | CA1295055C Integrated thin-film diaphragm; backside etch |
| 01/28/1992 | CA1295053C Bilateral switching device |
| 01/23/1992 | WO1992001314A1 N-type semiconducting diamond, and method of making the same |
| 01/23/1992 | WO1992001313A1 Mis-structure thin-film field effect transistors wherein the insulator and the semiconductor are made of organic material |
| 01/23/1992 | WO1992001310A1 Electronic device provided with metal fluoride film |
| 01/23/1992 | DE4123158A1 Mfg. conductive layer array - etches masking layer to form number of etched masking layer sections at preset intermediate spacing |
| 01/23/1992 | DE4113590A1 Microcomputer with programming unit - contains overwritable, non-volatile memory with gate and selection circuits facilitating program content definition |
| 01/22/1992 | EP0467811A1 Micro-pressure-sensor |
| 01/22/1992 | EP0467803A1 Pin-diode having a low initial overvoltage |
| 01/22/1992 | EP0467799A1 Overvoltage protection device and monolithic manufacturing process thereof |
| 01/22/1992 | EP0467636A1 Method of manufacturing field effect transistors |
| 01/22/1992 | EP0467392A1 Chemical vapor depositions apparatus and method of manufacturing annealed films |
| 01/22/1992 | EP0467081A2 Method of manufacturing a bipolar transistor |
| 01/22/1992 | EP0196897B1 Thermal etching of a compound semiconductor |
| 01/22/1992 | CN1058117A Schottky barrier semiconductor device |
| 01/21/1992 | US5083234 Multilayer transducer with bonded contacts and method for implementation of bonding |
| 01/21/1992 | US5083185 Surge absorption device |
| 01/21/1992 | US5083182 Darlington device with an ultra-lightweight emitter speed-up transistor |
| 01/21/1992 | US5083180 Lateral-type semiconductor device |
| 01/21/1992 | US5083177 Thyristor having a low-reflection light-triggering structure |
| 01/21/1992 | US5083176 Semiconductor device having increased breakdown voltage |
| 01/21/1992 | US5082800 Masking; warped substrate |
| 01/21/1992 | US5082795 Window opening; vertical channel |
| 01/21/1992 | US5082794 Method of fabricating mos transistors using selective polysilicon deposition |
| 01/21/1992 | US5082793 Method for making solid state device utilizing ion implantation techniques |
| 01/21/1992 | CA1294713C Semiconductor memory comprising trench capacitor |
| 01/16/1992 | DE4122019A1 Semiconductor device with improved element isolation - has diffusion layer located below contact and has good field screening properties and prevents short circuiting |
| 01/15/1992 | EP0466527A2 Process for manufacturing the gate of a transistor |
| 01/15/1992 | EP0466508A1 MOS-type semiconductor device and manufacturing method thereof |
| 01/15/1992 | EP0466495A2 Liquid crystal display apparatus |
| 01/15/1992 | EP0466377A2 Liquid crystal display for displaying half-tone images |
| 01/15/1992 | EP0466166A1 Gate or interconnection for semiconductor device and method of manufacture thereof |
| 01/15/1992 | EP0466103A1 Method for forming a metallization by evaporation using an oblique direction of incidence on semiconductor material |
| 01/15/1992 | EP0466101A2 Power semiconductor device |
| 01/15/1992 | EP0466051A2 Non-volatile progammable read only memory device having memory cells each implemented by a memory transistor and a switching transistor coupled in parallel and method of memorizing a data bit |
| 01/15/1992 | EP0466016A2 Silicide/metal capacitor for polysilicon gate |
| 01/15/1992 | EP0465961A1 Semiconductor device on a dielectric isolated substrate |
| 01/15/1992 | EP0465888A1 Trench capacitor for large scale integrated memory |
| 01/15/1992 | EP0465886A2 Semiconductor device having an insulator film of silicon oxide in which OH ions are incorporated |
| 01/15/1992 | EP0465862A2 Permeable base transistor and method of making the same |
| 01/14/1992 | US5081687 Method and apparatus for testing LCD panel array prior to shorting bar removal |
| 01/14/1992 | US5081610 Reference cell for reading eeprom memory devices |
| 01/14/1992 | US5081559 Enclosed ferroelectric stacked capacitor |
| 01/14/1992 | US5081517 Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
| 01/14/1992 | US5081515 Semiconductor integrated circuit device |
| 01/14/1992 | US5081514 Protection circuit associated with input terminal of semiconductor device |
| 01/14/1992 | US5081513 Electronic device with recovery layer proximate to active layer |
| 01/14/1992 | US5081512 Electronic devices |
| 01/14/1992 | US5081511 Heterojunction field effect transistor with monolayers in channel region |
| 01/14/1992 | US5081510 High-voltage semiconductor device having a rectifying barrier, and method of fabrication |
| 01/14/1992 | US5081509 Semiconductor rectifying diode with pn geometry |
| 01/14/1992 | US5081379 Current-sensing circuit for an ic power semiconductor device |
| 01/14/1992 | US5081066 Reacting silicon layer with metal |
| 01/14/1992 | US5081065 Method of contacting silicide tracks |
| 01/14/1992 | US5081058 Semiconductors |
| 01/14/1992 | US5081057 Electrically alterable, nonvolatile, floating gate type memory device with reduced tunnelling area and fabrication thereof |
| 01/14/1992 | US5081056 Process for fabricating an eprom cell array organized in a tablecloth arrangement |
| 01/14/1992 | US5081055 Semiconductors |
| 01/14/1992 | US5081053 Method for forming a transistor having cubic boron nitride layer |
| 01/14/1992 | US5081052 Read only memory, semiconductors |
| 01/14/1992 | US5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities |
| 01/14/1992 | US5081004 Method to produce a display screen with a matrix of transistors provided with an optical mask |
| 01/10/1992 | WO1992016946A1 Semiconductor memory having nonvolatile semiconductor memory cell |
| 01/09/1992 | WO1992000629A2 Disorder-induced narrowband high-speed electronic devices |
| 01/09/1992 | WO1992000608A1 Process for manufacturing pmos-transistors and pmos-transistors thus produced |
| 01/09/1992 | WO1992000607A1 Field effect transistor |
| 01/09/1992 | WO1992000606A1 Monolithically integrated semiconductor arrangement with a cover electrode |
| 01/09/1992 | DE4121456A1 LDD transistor - with P=type pocket formed near gate and N-diffusion region |
| 01/09/1992 | DE4020076A1 Verfahren zur herstellung eines pmos-transistors sowie pmos-transistor Process for the preparation of a PMOS transistor and PMOS transistor |
| 01/08/1992 | EP0465227A2 Composite integrated circuit device |
| 01/08/1992 | EP0465151A2 Semiconductor device with Shottky junction |
| 01/08/1992 | EP0465056A2 Method of making electrical contacts to gate structures in integrated circuits |
| 01/08/1992 | EP0465045A2 Method of field effect transistor fabrication for integrated circuits |