| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/08/1992 | EP0464897A2 Active matrix liquid crystal display devices |
| 01/08/1992 | EP0464866A2 Wafer and method of making same |
| 01/08/1992 | EP0464843A2 Patterning method using an inorganic masking layer |
| 01/08/1992 | EP0464834A1 Method of generating active semiconductor structures by means of starting structures which have a two-dimensional charge carrier layer parallel to the surface |
| 01/08/1992 | EP0464794A2 Painting pattern generation system and pattern painting method using the system |
| 01/08/1992 | EP0464664A2 Thin film memory cell |
| 01/08/1992 | EP0464579A2 Thin film field effect transistor array for use in active matrix liquid crystal display |
| 01/08/1992 | EP0464453A1 MIS type capacitor having reduced change in capacitance when biased in forward and reverse directions |
| 01/08/1992 | EP0464432A2 Asymmetrical virtual ground EPROM cell & fabrication method |
| 01/08/1992 | EP0464196A1 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate |
| 01/08/1992 | EP0314712B1 Two-terminal semiconductor diode arrangement |
| 01/08/1992 | CN1057736A Semiconductor device and method for producing same |
| 01/07/1992 | US5079670 Metal plate capacitor and method for making the same |
| 01/07/1992 | US5079620 Split-gate field effect transistor |
| 01/07/1992 | US5079617 Multiple layer electrode structure for semiconductor device and method of manufacturing thereof |
| 01/07/1992 | US5079608 Power MOSFET transistor circuit with active clamp |
| 01/07/1992 | US5079607 Mos type semiconductor device |
| 01/07/1992 | US5079605 Silicon-on-insulator transistor with selectable body node to source node connection |
| 01/07/1992 | US5079603 Semiconductor memory device |
| 01/07/1992 | US5079602 Insulated gate bipolar transistor |
| 01/07/1992 | US5079596 Gallium arsenude intermetallic |
| 01/07/1992 | US5079595 Organic thin film semiconductor device |
| 01/07/1992 | US5079483 Electroluminescent device driving circuit |
| 01/07/1992 | US5079191 Process for producing a semiconductor device |
| 01/07/1992 | US5079186 Production method, production instrument, and handling method of compound semiconductor quantum boxes, and light emitting devices using those quantum boxes |
| 01/07/1992 | US5079180 Method of fabricating a raised source/drain transistor |
| 01/07/1992 | US5079179 Process of making GaAs electrical circuit devices with Langmuir-Blodgett insulator layer |
| 01/07/1992 | US5079178 Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor |
| 01/07/1992 | US5079176 Method of forming a high voltage junction in a dielectrically isolated island |
| 01/07/1992 | US5079175 Process for the manufacture of short circuits on the anode side of thyristors |
| 01/07/1992 | US5078498 Two-transistor programmable memory cell with a vertical floating gate transistor |
| 01/07/1992 | CA1294064C Field effect transistor |
| 01/07/1992 | CA1294061C Process for fabricating self-aligned silicide lightly doped drain mos devices |
| 01/02/1992 | EP0463907A1 Electromagnetic wave detector |
| 01/02/1992 | EP0463854A1 Clocked driver circuit |
| 01/02/1992 | EP0463745A1 A vertical pnp transistor |
| 01/02/1992 | EP0463731A1 Electrode for semiconductor device and process for producing the same |
| 01/02/1992 | EP0463623A2 Nonvolatile semiconductor memory circuit |
| 01/02/1992 | EP0463580A2 Non-volatile semiconductor memory device |
| 01/02/1992 | EP0463523A1 Power semiconductor circuit |
| 01/02/1992 | EP0463511A2 Split gate EPROM cell using polysilicon spacers |
| 01/02/1992 | EP0463510A2 High density stacked gate EPROM split cell with bit line reach-through and interruption immunity |
| 01/02/1992 | EP0463476A2 Self-aligned collector implant for bipolar transistors |
| 01/02/1992 | EP0463389A1 Structure and fabrication method for a double trench memory cell device |
| 01/02/1992 | EP0463378A2 An electrically-erasable, electrically-programmable read-only memory cell with a selectable threshold voltage and methods for its use |
| 01/02/1992 | EP0463373A2 Local interconnect using a material comprising tungsten |
| 01/02/1992 | EP0463362A2 Semiconductor device having metallic layers |
| 01/02/1992 | EP0463332A1 Manufacturing method of a multilayer gate electrode containing doped polysilicon and metal-silicide for a MOS-transistor |
| 01/02/1992 | EP0463331A2 An improved method for programming a non-volatile memory |
| 01/02/1992 | EP0463330A2 Iterative self-aligned contact metallization process |
| 01/02/1992 | EP0463325A2 Device and method for driving semiconductor device having bipolar transistor, insulated gate FET and thyristor combined together |
| 01/02/1992 | EP0463297A1 Arrangement comprising substrate and component and method of making the same |
| 01/02/1992 | EP0463174A1 Method of manufacturing semiconductor device |
| 01/02/1992 | EP0463165A1 Device and method of manufacturing the same; and semiconductor device and method of manufacturing the same |
| 01/02/1992 | DE4020519A1 Monolithic integrated semiconductor with higher breakdown voltage |
| 01/02/1992 | DE4020193A1 Feldeffekttransistor Field-effect transistor |
| 01/01/1992 | CN1057547A Integrated bipolar and cmos transistor fabrication process |
| 12/31/1991 | US5077762 Charge transfer device having mim structures and method for driving the same |
| 12/31/1991 | US5077599 High wire bonding strength, low ohmic resistance |
| 12/31/1991 | US5077594 Integrated high voltage transistors having minimum transistor to transistor crosstalk |
| 12/31/1991 | US5077590 High voltage semiconductor device |
| 12/31/1991 | US5077589 MESFET structure having a shielding region |
| 12/31/1991 | US5077586 Vdmos/logic integrated circuit comprising a diode |
| 12/31/1991 | US5077466 Detector of electromagnetic waves having five different forbidden gap widths |
| 12/31/1991 | US5077233 Forming anti-reflecting film with lower layer of silicon dioxide and upper of silicon nitride; exposure; irradiation; oxidation; etching |
| 12/31/1991 | US5077232 Method of making stacked capacitor DRAM cells |
| 12/31/1991 | US5077231 Method to integrate HBTs and FETs |
| 12/31/1991 | US5077227 Semiconductor device and method for fabricating the same |
| 12/31/1991 | US5077224 P-N juctions biased in non-conducting direction to reduce surface field strengths |
| 12/27/1991 | EP0462882A1 Thin film field effect transistor with buried gate and its method of fabrication |
| 12/27/1991 | EP0462717A2 Semiconductor device including a bipolar transistor with a buried electrode |
| 12/27/1991 | EP0462700A2 Process for the selective encapsulation of an electrically conductive structure in a semiconductor device |
| 12/27/1991 | EP0462656A1 A semiconductor device having a conductive track |
| 12/27/1991 | EP0462270A1 Thin, dielectrically isolated island resident transistor structure having low collector resistance |
| 12/26/1991 | WO1991020084A1 Spatial optical modulator |
| 12/24/1991 | US5075885 Ecl eprom with cmos programming |
| 12/24/1991 | US5075817 Trench capacitor for large scale integrated memory |
| 12/24/1991 | US5075764 Diamond electric device and manufacturing method for the same |
| 12/24/1991 | US5075763 High temperature metallization system for contacting semiconductor materials |
| 12/24/1991 | US5075762 Semiconductor device having an inter-layer insulating film disposed between two wiring layers and method of manufacturing the same |
| 12/24/1991 | US5075757 Ohmic contact electrodes for semiconductor diamonds |
| 12/24/1991 | US5075756 Thin film composed of at least tungsten and antimony |
| 12/24/1991 | US5075754 Semiconductor device having improved withstanding voltage characteristics |
| 12/24/1991 | US5075752 Bi-cmos semiconductor device having memory cells formed in isolated wells |
| 12/24/1991 | US5075751 Semiconductor device |
| 12/24/1991 | US5075747 Charge transfer device with meander channel |
| 12/24/1991 | US5075746 Thin film field effect transistor and a method of manufacturing the same |
| 12/24/1991 | US5075744 Gallium arsenide, gallium arsenide phosphide, indium gallium a rsenide channel layer |
| 12/24/1991 | US5075740 High speed, high voltage schottky semiconductor device |
| 12/24/1991 | US5075739 High voltage planar edge termination using a punch-through retarding implant and floating field plates |
| 12/24/1991 | US5075737 Thin film semiconductor device |
| 12/24/1991 | US5075736 Superconducting three terminal device with component members crossing at finite angles and formed of superconductor such as niobium, aluminium |
| 12/24/1991 | US5075253 Method of coplanar integration of semiconductor IC devices |
| 12/24/1991 | US5075246 Semiconductor substrate, dopes, masking |
| 12/24/1991 | US5075244 Metal gate electrodes of thin film transistor switching elemen ts, gate insulating layers, semiconductor active and ohmic con tact layers, drain and source electrodes, barrier metal, photo detect elements, photoconductor, contact holes, metal wiring |
| 12/24/1991 | US5075241 Method of forming a recessed contact bipolar transistor and field effect device |
| 12/24/1991 | US5074956 Pattern forming method |
| 12/19/1991 | DE4119918A1 Fast dram construction with improved capacitor size - uses polycide bit-lines and diffusion contacts and capacitor stack overlying word-line |
| 12/18/1991 | EP0462040A1 MOS-transistor with high threshold voltage |
| 12/18/1991 | EP0462029A1 Process of fabricating a bipolar transistor sustaining a reverse bias |