| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/25/1992 | US5091980 Optical quantum interference device/optical computer and method of modulating light using same |
| 02/25/1992 | US5091922 Charge transfer device type solid state image sensor having constant saturation level |
| 02/25/1992 | US5091882 Nonvolatile semiconductor memory device and method of operating the same |
| 02/25/1992 | US5091767 Article comprising a lattice-mismatched semiconductor heterostructure |
| 02/25/1992 | US5091766 Thyristor with first and second independent control electrodes |
| 02/25/1992 | US5091763 Self-aligned overlap MOSFET and method of fabrication |
| 02/25/1992 | US5091759 Heterostructure field effect transistor |
| 02/25/1992 | US5091338 Process for forming heat resistant ohmic electrode |
| 02/25/1992 | US5091337 Method of manufacturing amorphous-silicon thin-film transistors |
| 02/25/1992 | US5091336 Method of making a high breakdown active device structure with low series resistance |
| 02/25/1992 | US5091334 Semiconductor device |
| 02/25/1992 | US5091327 Fabrication of a high density stacked gate eprom split cell with bit line reach-through and interruption immunity |
| 02/25/1992 | US5091326 EPROM element employing self-aligning process |
| 02/25/1992 | US5091323 Forming patterned oxidation resistant film, then silicon oxide, removal oxidation resistant film, forming emitters |
| 02/25/1992 | US5091322 Semiconductor device and method of manufacturing the same |
| 02/25/1992 | US5091321 Second doping step through emitter contact hole |
| 02/25/1992 | US5090254 Polysilicon resonating beam transducers |
| 02/25/1992 | US5090247 Semiconductor pressure sensor connected to a support element |
| 02/22/1992 | CA2023737A1 Special geometry schottky diode |
| 02/20/1992 | WO1992002956A1 Semiconductor device and its manufacturing method |
| 02/20/1992 | WO1992002954A1 High power, compound semiconductor device and fabrication process |
| 02/20/1992 | WO1992002798A1 Pressure sensor |
| 02/20/1992 | WO1992002797A1 Pressure sensor |
| 02/20/1992 | WO1992000629A3 Disorder-induced narrowband high-speed electronic devices |
| 02/19/1992 | EP0471628A1 Thin film transistor circuit and its manufacturing |
| 02/19/1992 | EP0471526A1 Vertical power MOSFET |
| 02/19/1992 | EP0471381A2 Non-volatile memory and method for fabricating the same |
| 02/19/1992 | EP0471310A1 MOS-type semiconductor integrated circuit device |
| 02/19/1992 | EP0471288A2 Electron wave coupling or decoupling devices and quantum interference devices |
| 02/19/1992 | EP0471243A1 Manufacturing method for capacitor device with large capacity |
| 02/19/1992 | EP0471185A2 Process for forming refractory metal silicide layers in an integrated circuit |
| 02/19/1992 | EP0471131A1 Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process |
| 02/19/1992 | EP0471018A1 Floating-gate charge-balance ccd |
| 02/18/1992 | US5089875 Semiconductor device with mis capacitor |
| 02/18/1992 | US5089873 Integrated circuit having a vertical transistor |
| 02/18/1992 | US5089872 Selective germanium deposition on silicon and resulting structures |
| 02/18/1992 | US5089871 Increased voltage mos semiconductor device |
| 02/18/1992 | US5089870 Soi mos transistor with a substrate-source connection |
| 02/18/1992 | US5089867 High control gate/floating gate coupling for EPROMs, E2 PROMs, and Flash E2 PROMs |
| 02/18/1992 | US5089866 Two-transistor type non-volatile semiconductor memory |
| 02/18/1992 | US5089865 Mis semiconductor device |
| 02/18/1992 | US5089864 Insulated gate type semiconductor device |
| 02/18/1992 | US5089863 Field effect transistor with T-shaped gate electrode |
| 02/18/1992 | US5089862 Monocrystalline three-dimensional integrated circuit |
| 02/18/1992 | US5089438 Method of making an article comprising a TiNx layer |
| 02/18/1992 | US5089435 Method of making a field effect transistor with short channel length |
| 02/18/1992 | US5089434 Mask surrogate semiconductor process employing dopant-opaque region |
| 02/18/1992 | US5089433 Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture |
| 02/18/1992 | US5089431 Forming rectifying junction pattern which can be easily contacted and provides low resistance path |
| 02/18/1992 | US5089430 Method of manufacturing semiconductor integrated circuit bipolar transistor device |
| 02/18/1992 | US5089428 Method for forming a germanium layer and a heterojunction bipolar transistor |
| 02/18/1992 | US5089427 Semiconductor device and method |
| 02/18/1992 | CA1296112C Phthalocyanine-based organic semiconductor device |
| 02/18/1992 | CA1296111C Method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide |
| 02/12/1992 | EP0470500A1 Low-noise output buffer circuit |
| 02/12/1992 | EP0470371A2 Semiconductor device with input protection circuit of high withstand voltage |
| 02/11/1992 | US5087954 Mos-type integrated circuit |
| 02/11/1992 | US5087950 Schottky barrier junction gate field effect transistor |
| 02/11/1992 | US5087948 Disorder-induced narrowband high-speed electronic devices |
| 02/11/1992 | US5087843 Input circuit for ccd delay line |
| 02/11/1992 | US5087588 Semiconductor |
| 02/11/1992 | US5087584 Process for fabricating a contactless floating gate memory array utilizing wordline trench vias |
| 02/11/1992 | US5087583 Manufacturing a nonvolatile memory transistor containing a floating gate |
| 02/11/1992 | US5087582 Mosfet and fabrication method |
| 02/11/1992 | US5087581 Method of forming vertical FET device with low gate to source overlap capacitance |
| 02/11/1992 | US5087580 Self-aligned bipolar transistor structure and fabrication process |
| 02/11/1992 | US5087577 Manufacturing method for a power misfet |
| 02/11/1992 | US5087307 Method of manufacturing semiconductor substrate |
| 02/11/1992 | US5087113 Liquid crystal display device |
| 02/06/1992 | WO1992002051A1 Semiconductor device |
| 02/06/1992 | WO1992002050A1 Semiconductor device provided with ferroelectric material |
| 02/06/1992 | WO1992002049A1 Semiconductor device |
| 02/06/1992 | WO1992002046A1 Method of manufacturing semiconductor device |
| 02/06/1992 | WO1992002045A1 Method for manufacturing semiconductor device |
| 02/06/1992 | WO1992002037A1 OHMIC CONTACT FOR P-TYPE GaAs |
| 02/05/1992 | EP0470003A1 Semiconductor device |
| 02/05/1992 | EP0469840A2 Transistor with predetermined emitter area and method of manufacturing |
| 02/05/1992 | EP0469807A2 Quantum field effect device |
| 02/05/1992 | EP0469793A2 Monolithic integrated optical amplifier and photodetector |
| 02/05/1992 | EP0469790A1 Semiconductor devices with low dislocation defects and method for making same |
| 02/05/1992 | EP0469768A1 A substantially linear field effect transistor and method of making same |
| 02/05/1992 | EP0469712A1 Method for forming semiconductor structures including quantum-well wires |
| 02/05/1992 | EP0469611A1 Tunnel injection semiconductor devices and its manufacturing process |
| 02/05/1992 | EP0469606A2 A process for forming a MES electrode |
| 02/05/1992 | EP0469367A1 Method for creating self-aligned, non-patterned contact areas and stacked capacitors using the method |
| 02/05/1992 | EP0469217A1 Method of forming stacked self-aligned polysilicon PFET devices and structures resulting therefrom |
| 02/04/1992 | US5086413 Non-volatile semiconductor memory device having an improved testing mode of operation and method of forming checkerwise test pattern in memory cell array |
| 02/04/1992 | US5086410 Non-erasable eprom cell for redundancy circuit |
| 02/04/1992 | US5086332 Planar semiconductor device having high breakdown voltage |
| 02/04/1992 | US5086330 Bipolar semiconductor switching device |
| 02/04/1992 | US5086329 Controlling transmission of microwave energy |
| 02/04/1992 | US5086325 Narrow width EEPROM with single diffusion electrode formation |
| 02/04/1992 | US5086324 Insulated gate bipolar transistor |
| 02/04/1992 | US5086323 Conductivity modulated mosfet |
| 02/04/1992 | US5086322 Input protection circuit and output driver circuit comprising mis semiconductor device |
| 02/04/1992 | US5086321 Unpinned oxide-compound semiconductor structures and method of forming same |
| 02/04/1992 | US5086242 Fast turn-off of thyristor structure |
| 02/04/1992 | US5086014 Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film |
| 02/04/1992 | US5086010 Method for manufacturing solid state image sensing device formed of charge coupled devices on side surfaces of trenches |
| 02/04/1992 | US5086008 N-doping P type semiconductor substrate, deposition of polysilicon gate layer, oxidation of polysilicon |