Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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03/18/1992 | EP0475361A1 Image sensor having output unit shielded from capacitively coupled noise originated from the CCD transfer clock signals |
03/18/1992 | EP0475237A2 Non-erasable EPROM cell for redundancy circuit |
03/18/1992 | EP0474781A1 Nvram with integrated sram and nv circuit |
03/18/1992 | EP0285645B1 Combined photovoltaic-thermoelectric solar cell and solar cell array |
03/18/1992 | EP0258396B1 Fabrication process for stacked mos devices |
03/18/1992 | CN1015941B Display device for use in the reflection mode |
03/17/1992 | US5097445 Semiconductor integrated circuit with selective read and write inhibiting |
03/17/1992 | US5097381 Double sidewall trench capacitor cell |
03/17/1992 | US5097316 Complementary NPN and PNP lateral transistors separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom |
03/17/1992 | US5097314 Dielectrically isolated substrate with isolated high and low breakdown voltage elements |
03/17/1992 | US5097311 Semiconductor device |
03/17/1992 | US5097310 Complementary semiconductor device having improved device isolating region |
03/17/1992 | US5097309 Vertical PNP transistor |
03/17/1992 | US5097308 Method for controlling the switching speed of bipolar power devices |
03/17/1992 | US5097302 Semiconductor device having current detection capability |
03/17/1992 | US5097301 Composite inverse T-gate metal oxide semiconductor device and method of fabrication |
03/17/1992 | US5097300 Semiconductor device and manufacturing method thereof |
03/17/1992 | US5097298 Blue light emitting display element |
03/17/1992 | US5097297 Thin film transistor |
03/17/1992 | US5097160 Method of transmitting pulse signal and apparatus therefor |
03/17/1992 | US5096849 Process for positioning a mask within a concave semiconductor structure |
03/17/1992 | US5096845 Reduced channel length, controlled doping |
03/17/1992 | US5096843 Forming dielectric on walls of trenches before doping |
03/17/1992 | US5096842 Method of fabricating bipolar transistor using self-aligned polysilicon technology |
03/17/1992 | US5096841 Multilayer blocking film |
03/17/1992 | US5096840 Method of making a polysilicon emitter bipolar transistor |
03/17/1992 | US5095752 Capacitance type accelerometer |
03/11/1992 | EP0474564A1 Lateral bipolar transistor having electrically induced emitter and collector regions |
03/11/1992 | EP0474533A1 Bidimensional organic membranes and process for their preparation |
03/11/1992 | EP0474383A1 Dielectric for use in manufacturing semiconductors |
03/11/1992 | EP0474289A1 A method for the fabrication of low leakage polysilicon thin film transistors |
03/11/1992 | EP0474280A2 Method for forming thin silicon membrane or beam |
03/11/1992 | EP0474258A1 Method of fabricating a dynamic semiconductor memory |
03/11/1992 | EP0474068A2 A method for manufacturing a semiconductor device having insulating films |
03/11/1992 | EP0473988A1 Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
03/11/1992 | EP0411088A4 Formation of microstructures with removal of liquid by freezing and sublimation |
03/11/1992 | CN1059424A Isolation method of semiconductor device |
03/10/1992 | US5095358 Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
03/10/1992 | US5095351 Semiconductor device having bipolar transistor and method of producing the same |
03/10/1992 | US5095344 Highly compact eprom and flash eeprom devices |
03/10/1992 | US5095343 Power MOSFET |
03/10/1992 | US5095304 Matrix display device |
03/10/1992 | US5095220 Circuit configuration for potential triggering of a field effect transistor |
03/10/1992 | US5094979 Method of fabricating semiconductor device |
03/10/1992 | US5094968 Fabricating a narrow width EEPROM with single diffusion electrode formation |
03/10/1992 | US5094967 Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a cvd second insulating film |
03/10/1992 | US5094966 Method for the manufacture of an insulated gate field effect semiconductor device using photo enhanced CVD |
03/10/1992 | US5094965 DRAM, low resistance |
03/10/1992 | US5094964 Silicon microcrystal as emitter, high frequency discharging for silane gas, CVD |
03/10/1992 | US5094963 Process for producing a semiconductor device with a bulk-defect region having a nonuniform depth |
03/05/1992 | WO1992003873A1 Mixer with a double barrier resonant tunnelling diode |
03/05/1992 | WO1992003850A2 Image sensor having transfer gate between the photodiode and the ccd element |
03/05/1992 | WO1992003844A1 Multilayer integrated circuit module |
03/04/1992 | EP0473407A1 Semiconductor device with a divided active region |
03/04/1992 | EP0473397A1 Method for manufacturing a double-gated MOS transistor |
03/04/1992 | EP0473344A2 Process for etching a conductive bi-layer structure |
03/04/1992 | EP0473201A2 Dynamic semiconductor random access memory |
03/04/1992 | EP0473129A2 Asymmetrical non-volatile memory cell, arrays and methods for fabricating same |
03/04/1992 | EP0472970A2 Process for growing crystalline thin film |
03/04/1992 | EP0472945A2 Semiconductor integrated circuit |
03/04/1992 | EP0472880A2 Method of making a thyristor having a well defined lateral resistance |
03/04/1992 | EP0472804A2 Copper-semiconductor compounds capable of being produced at room temperature |
03/04/1992 | EP0472726A1 Field effect transistor |
03/04/1992 | EP0472654A1 Low voltage triggered snap-back device. |
03/04/1992 | EP0472647A1 Voltage stress alterable esd protection structure |
03/04/1992 | EP0472592A1 Low trigger voltage scr protection device and structure. |
03/04/1992 | CN1059234A Semiconductor device with buried electrode |
03/03/1992 | US5093849 Charge transfer device and its driving method for providing potential wells gradually shallower toward the final transfer stage |
03/03/1992 | US5093711 Semiconductor device |
03/03/1992 | US5093708 Multilayer integrated circuit module |
03/03/1992 | US5093705 Thyristor with reduced central zone thickness |
03/03/1992 | US5093704 Transistors, diodes, amorphous or polycrystalline silicon, improved frequency properties and photoresponse |
03/03/1992 | US5093703 Thin film transistor with 10-15% hydrogen content |
03/03/1992 | US5093701 Conductivity modulated mosfet |
03/03/1992 | US5093700 Single gate structure with oxide layer therein |
03/03/1992 | US5093699 Gate adjusted resonant tunnel diode device and method of manufacture |
03/03/1992 | US5093696 Semiconductor heterojunction device made by an epitaxial growth technique |
03/03/1992 | US5093694 Semiconductor variable capacitance diode with forward biasing |
03/03/1992 | US5093693 Pn-junction with guard ring |
03/03/1992 | US5093692 Layers of doped indium gallium arsenide of different electroconductivity; semiconductors |
03/03/1992 | US5093586 Voltage step-up circuit for non-volatile semiconductor memory |
03/03/1992 | US5093276 Channel formation by contact self-alignment |
03/03/1992 | US5093275 Method for forming hot-carrier suppressed sub-micron MISFET device |
03/03/1992 | US5093273 Miniaturization |
03/03/1992 | US5093272 Manufacturing method for a self-aligned emitter-base-complex for heterobipolar transistors |
03/03/1992 | CA1296816C Process for producing a semiconductor article |
03/03/1992 | CA1296802C Semiconductor device for charge-coupled device |
03/01/1992 | CA2050245A1 Semiconductor device |
02/26/1992 | EP0472481A2 High voltage semiconductor device having low leakage current |
02/26/1992 | EP0472452A1 Power transistor and its manufacturing process |
02/26/1992 | EP0472357A2 A semiconductor integrated circuit |
02/26/1992 | EP0472328A2 Method of making a polysilicon emitter bipolar transistor |
02/26/1992 | EP0472297A1 MOS-Semiconductor device and method of manufacturing the same |
02/26/1992 | EP0472262A1 Heterojunction bipolar transistor |
02/26/1992 | EP0472241A2 Electrically programmable and erasable semiconductor memory and its operation method |
02/26/1992 | EP0472240A2 Electrically programmable and erasable semiconductor memory and its method of operation |
02/26/1992 | EP0472055A1 Misfet |
02/26/1992 | EP0471844A1 Silicon oxide film and semiconductor device having the same |
02/26/1992 | EP0471737A1 Semiconductor device. |
02/26/1992 | EP0144444B1 Method of manufacturing semiconductor device |