| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 04/07/1992 | US5103330 Matrix-type liquid-crystal display panel having redundant conductor structures |
| 04/07/1992 | US5103287 Multi-layered wiring structure of semiconductor integrated circuit device |
| 04/07/1992 | US5103285 Silicon carbide barrier between silicon substrate and metal layer |
| 04/07/1992 | US5103284 Semiconductor with ordered clusters |
| 04/07/1992 | US5103278 Charge transfer device achieving a high charge transfer efficiency by forming a potential well gradient under an output-gate area |
| 04/07/1992 | US5103277 Radiation hard CMOS circuits in silicon-on-insulator films |
| 04/07/1992 | US5103273 Nonvolatile memory array having cells with two tunnelling windows |
| 04/07/1992 | US5103272 Semiconductor device and a method for manufacturing the same |
| 04/07/1992 | US5103160 Shunt regulator with tunnel oxide reference |
| 04/07/1992 | US5102816 Selective etching of silicon nitride layer |
| 04/07/1992 | US5102815 Method of fabricating a composite inverse T-gate metal oxide semiconductor device |
| 04/07/1992 | US5102813 Method of fabricating a thin film transistor |
| 04/07/1992 | US5102812 Method of making a lateral bipolar heterojunction structure |
| 04/07/1992 | US5102811 High voltage bipolar transistor in BiCMOS |
| 04/07/1992 | US5102810 Method for controlling the switching speed of bipolar power devices |
| 04/07/1992 | CA1298670C Germanium channel silicon mosfet |
| 04/02/1992 | WO1992005585A1 Distortion sensor |
| 04/02/1992 | WO1992005575A1 Field-assisted bonding |
| 04/02/1992 | WO1992005560A1 Nonvolatile semiconductor memory |
| 04/02/1992 | WO1992005481A1 Insulated gate transistor devices with temperature and current sensor |
| 04/02/1992 | DE4114344A1 Floating gate storage device with control of dielectric thickness - uses oxide-nitride-oxide dielectric layer between two gates which overlaps in one direction to add capacitance |
| 04/02/1992 | DE4029608A1 Semiconductor storage capacitor for IC DRAM memory - has two capacitor plates either side of ion conducting layer |
| 04/01/1992 | EP0478380A1 Organic thin film element |
| 04/01/1992 | EP0478004A2 Insulated gate transistor operable at a low drain-source voltage |
| 04/01/1992 | EP0477995A1 Process for forming CMOS and bipolar devices on the same substrate |
| 04/01/1992 | EP0477873A2 Vertical type semiconductor device |
| 04/01/1992 | EP0477600A1 Method of attaching a semiconductor body provided at least with one semiconductor component to a substrate |
| 04/01/1992 | EP0477594A1 Turn-off thyristor |
| 04/01/1992 | EP0477580A2 Heterostructure semiconductor devices |
| 04/01/1992 | EP0477515A1 Heterojunction field effect transistor with monolayer in channel region |
| 04/01/1992 | EP0477428A1 Semiconductor chip comprising at least one resistive device |
| 04/01/1992 | CN1016125B Collector contact of integrated bipolar transistor |
| 03/31/1992 | US5101262 Semiconductor memory device and method of manufacturing it |
| 03/31/1992 | US5101256 Bipolar transistor with ultra-thin epitaxial base and method of fabricating same |
| 03/31/1992 | US5101250 Electrically programmable non-volatile memory device and manufacturing method thereof |
| 03/31/1992 | US5101249 Nonvolatile semiconductor memory device |
| 03/31/1992 | US5101248 Semiconductor device |
| 03/31/1992 | US5101247 Germanium silicon dioxide gate MOSFET |
| 03/31/1992 | US5101245 Field effect transistor and method for making same |
| 03/31/1992 | US5101244 Semiconductor schottky device with pn regions |
| 03/31/1992 | US5101242 Thin film transistor |
| 03/31/1992 | US5100836 Method of making a semiconductor device |
| 03/31/1992 | US5100835 Multilayer metallization of gallium arsenide substrate, rapid annealing |
| 03/31/1992 | US5100830 LOCOS technique, forming a thin element isolation film |
| 03/31/1992 | US5100829 Process for forming a semiconductor structure with closely coupled substrate temperature sense element |
| 03/31/1992 | US5100824 Semiconductors |
| 03/31/1992 | US5100823 Method of making buried stacked transistor-capacitor |
| 03/31/1992 | US5100822 Data storage capacitance element of dynamic random access memory |
| 03/31/1992 | US5100820 MOSFET fabrication process with lightly-doped drain using local oxidation step to pattern gate electrode |
| 03/31/1992 | US5100819 Semiconductors |
| 03/31/1992 | US5100818 Non-volatile semiconductor memory device and method of manufacturing the same |
| 03/31/1992 | US5100817 Load devices in SRAM cells |
| 03/31/1992 | US5100816 Method of forming a field effect transistor on the surface of a substrate |
| 03/31/1992 | US5100815 Fabrication method for bimos semiconductor devices with improved speed and reliability |
| 03/31/1992 | US5100814 Semiconductor device and method of manufacturing the same |
| 03/31/1992 | US5100812 Method of manufacturing semiconductor device |
| 03/31/1992 | US5100811 Integrated circuit containing bi-polar and complementary mos transistors on a common substrate and method for the manufacture thereof |
| 03/31/1992 | US5100810 Manufacturing method of semiconductor devices |
| 03/31/1992 | US5100809 Method of manufacturing semiconductor device |
| 03/31/1992 | CA1298389C High dynamic range charge-coupled device |
| 03/25/1992 | EP0476815A2 Thyristor and method of manufacturing the same |
| 03/25/1992 | EP0476801A2 Production of a semiconductor device using implantation into a thermohardening resin |
| 03/25/1992 | EP0476757A2 A method of manufacturing a semiconductor device |
| 03/25/1992 | EP0476713A2 Method for forming crystal and crystal article obtained by said method |
| 03/25/1992 | EP0476701A2 A thin-film transistor and a thin film transistor panel using thin-film transistors of this type |
| 03/25/1992 | EP0476661A2 Press-contact type semiconductor device |
| 03/25/1992 | EP0476571A2 Semiconductor device with vertical bipolar transistors |
| 03/25/1992 | EP0476412A1 Bipolar transistor and fabrication method thereof |
| 03/25/1992 | EP0476380A1 Self-aligned bipolar transistor structure and fabrication process |
| 03/25/1992 | EP0476308A1 Bipolar transistor for high power in the microwave range |
| 03/25/1992 | EP0476296A1 Turn off type semiconductor device and employing the same in a power conversion device |
| 03/25/1992 | EP0476174A1 Field effect attenuator devices having controlled electrical lengths |
| 03/25/1992 | EP0476108A1 Cold cathode field emission device having integral control or controlled non-fed devices |
| 03/25/1992 | EP0472654A4 Low voltage triggered snap-back device |
| 03/25/1992 | EP0287656B1 T-gate electrode for field effect transistor and field effect transistor made therewith |
| 03/24/1992 | US5099451 Memory array with electrically programmable memory cells and electricaly unprogrammable, unerasable memory cells, both types of memory cells having floating gate transistors |
| 03/24/1992 | US5099303 BiCMOS integrated circuit with shallow n-wells |
| 03/24/1992 | US5099302 Integrable active diode |
| 03/24/1992 | US5099300 Gated base controlled thyristor |
| 03/24/1992 | US5099299 Modulation doped base heterojunction bipolar transistor |
| 03/24/1992 | US5099298 Magnetically sensitive semiconductor device |
| 03/24/1992 | US5099297 EEPROM cell structure and architecture with programming and erase terminals shared between several cells |
| 03/24/1992 | US5099296 Thin film transistor |
| 03/24/1992 | US5099295 High electron mobility transistors, two dimensional electron gas |
| 03/24/1992 | US5099146 Controlled threshold type electric device and comparator employing the same |
| 03/24/1992 | US5098866 Method for reducing hot-electron-induced degradation of device characteristics |
| 03/24/1992 | US5098861 To oxidized surface, diffusion doping |
| 03/24/1992 | US5098859 Intermetallic, annealing |
| 03/24/1992 | US5098858 Intermetallic substrate, depositing metal, molecular beam epitaxy |
| 03/24/1992 | US5098854 Process for forming self-aligned silicide base contact for bipolar transistor |
| 03/24/1992 | US5098853 Self-aligned, planar heterojunction bipolar transistor and method of forming the same |
| 03/24/1992 | US5098638 Method of manufacturing a semiconductor device |
| 03/24/1992 | US5098192 DRAM with improved poly-to-poly capacitor |
| 03/24/1992 | CA1298000C Method of making a semiconductor device comprising contacting through an opening of reduced size |
| 03/19/1992 | WO1992004735A1 Photon stimulated variable capacitance effect devices |
| 03/19/1992 | WO1992004731A1 Isotopically enriched semiconductor devices |
| 03/18/1992 | EP0475688A2 Method for manufacturing memories with thin film transistors |
| 03/18/1992 | EP0475607A2 Method of producing semiconductor device including Schottky barrier diode |
| 03/18/1992 | EP0475403A2 Quantum interference devices and methods for processing interference current |
| 03/18/1992 | EP0475396A2 Quantum interference device and corresponding method for processing electron waves |