| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/28/1992 | US5108941 Forming refractory metal silicide on polysilicon; low temperature processing |
| 04/28/1992 | US5108940 Forming shallow conductive region by inversion |
| 04/28/1992 | US5108939 Method of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel region |
| 04/28/1992 | US5108938 Method of making a trench gate complimentary metal oxide semiconductor transistor |
| 04/28/1992 | US5108937 Eliminating source to drain leakage |
| 04/28/1992 | US5108936 Applying doped hydrogenated silicon layer |
| 04/28/1992 | US5108935 Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities |
| 04/28/1992 | CA1299771C Heterojunction bipolar transistor with collector buffer layer |
| 04/28/1992 | CA1299770C Techniques useful in fabricating semiconductor devices having submicron features |
| 04/28/1992 | CA1299769C Sequential-quenching resonant-tunneling transistor |
| 04/28/1992 | CA1299720C Single quantum well optical modulator |
| 04/23/1992 | DE4134547A1 Thin film transistor with improved gate dielectric breakdown voltage |
| 04/22/1992 | EP0481965A2 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 04/22/1992 | EP0481806A1 Component mounting arrangements |
| 04/22/1992 | EP0481777A2 Method of manufacturing gate insulated field effect transistors |
| 04/22/1992 | EP0481734A2 Light valve device |
| 04/22/1992 | EP0481681A1 Light emitting device |
| 04/22/1992 | EP0481559A2 A method of fabricating a field-effect transistor |
| 04/22/1992 | EP0481555A1 Heterostructure field-effect transistor |
| 04/22/1992 | EP0481531A2 Charge transfer device |
| 04/22/1992 | EP0481454A2 Lateral MOS FET and manufacturing method thereof |
| 04/22/1992 | EP0481419A2 Semiconductor electron emission element |
| 04/22/1992 | EP0481392A2 Semiconductor non-volatile memory device |
| 04/22/1992 | EP0481379A1 Thin film transistor and manufacturing method thereof |
| 04/22/1992 | EP0481362A2 Composite organic-inorganic superlattices |
| 04/22/1992 | EP0481328A2 Bidirectional current sensing for power MOSFETS |
| 04/22/1992 | EP0481202A1 Transistor structure with reduced collector-to-substrate capacitance |
| 04/22/1992 | EP0481153A1 Process for the accomplishment of power MOS transistors with vertical current flow |
| 04/22/1992 | EP0481113A1 Digitally controlled field effect attenuator devices |
| 04/21/1992 | US5107460 Spatial optical modulator |
| 04/21/1992 | US5107355 Liquid crystal display device having layered bus line structure |
| 04/21/1992 | US5107317 Semiconductor device with first and second buffer layers |
| 04/21/1992 | US5107315 Mis type diamond field-effect transistor with a diamond insulator undercoat |
| 04/21/1992 | US5107314 Gallium antimonide field-effect transistor |
| 04/21/1992 | US5107313 Floating gate type semiconductor memory device |
| 04/21/1992 | US5107312 Method of isolating a top gate of a MESFET and the resulting device |
| 04/21/1992 | US5107308 Containing protective dielectric polymer film |
| 04/21/1992 | US5106778 Forming grooves; growing semiconductor in grooves |
| 04/21/1992 | US5106775 Process for manufacturing vertical dynamic random access memories |
| 04/21/1992 | US5106773 Programmable gate array and methods for its fabrication |
| 04/21/1992 | US5106772 Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide |
| 04/21/1992 | US5106771 GaAs MESFETs with enhanced Schottky barrier |
| 04/21/1992 | US5106769 Controlled oxidation to form thick isolation oxide film |
| 04/21/1992 | US5106766 Carbon doped |
| 04/21/1992 | US5106256 Step device in miniature shovel car |
| 04/21/1992 | CA1299299C Semiconductor device including alternating ordered layers |
| 04/21/1992 | CA1299298C Complementary heterostructure semiconductor device |
| 04/21/1992 | CA1299068C Semiconductor deposition method and device |
| 04/19/1992 | CA2053458A1 Method of fabricating a field-effect transistor |
| 04/16/1992 | WO1992006505A1 Thin film transistor stucture with improved source/drain contacts |
| 04/16/1992 | WO1992006504A1 Thin film transistor having an improved gate structure and gate coverage by the gate dielectric |
| 04/16/1992 | WO1992006500A1 Semiconductor device |
| 04/16/1992 | WO1992006499A1 Semiconductor device |
| 04/16/1992 | WO1992006497A1 Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration |
| 04/16/1992 | WO1992006490A1 Device self-alignment by propagation of a reference structure's topography |
| 04/15/1992 | EP0480803A1 Method for making the electrode metallisation of a transistor |
| 04/15/1992 | EP0480635A1 Thin film transistor and a method of manufacturing thereof |
| 04/15/1992 | EP0480611A2 Field effect transistor signal switching device |
| 04/15/1992 | EP0480557A2 Method of making P-type compound semiconductor |
| 04/15/1992 | EP0480500A1 Distributed threshold voltage field effect transistor |
| 04/15/1992 | EP0480446A2 Method of fabricating a high-performance insulated-gate-field-effect transistor and transistor fabricated by it |
| 04/15/1992 | EP0480412A2 Charge transfer and/or amplifying device |
| 04/15/1992 | EP0480373A2 Thin-film semiconductor device |
| 04/15/1992 | EP0480356A2 MOS-controlled thyristor and method of making the same |
| 04/15/1992 | EP0480354A2 Electron wave interference device and related method for modulating an interference current |
| 04/15/1992 | EP0480313A2 Method of fabrication a T-gate-electrode |
| 04/15/1992 | EP0480274A1 Acceleration sensing and measurement |
| 04/15/1992 | CN1016297B Method of manufacturing a semiconductor device, in which a metal conductor track is provided on a surface of a semiconductor body |
| 04/15/1992 | CN1016296B Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 04/14/1992 | US5105450 Charge transfer device having alternating large and small transfer electrodes |
| 04/14/1992 | US5105385 Cell array pattern layout for eeprom device |
| 04/14/1992 | US5105251 Semiconductor device |
| 04/14/1992 | US5105250 Heterojunction bipolar transistor with a thin silicon emitter |
| 04/14/1992 | US5105248 Spatial light modulator using charge coupled device with quantum wells |
| 04/14/1992 | US5105247 Quantum field effect device with source extension region formed under a gate and between the source and drain regions |
| 04/14/1992 | US5105244 Gate turn-off power semiconductor component |
| 04/14/1992 | US5105243 Conductivity-modulation metal oxide field effect transistor with single gate structure |
| 04/14/1992 | US5105242 Field effect transistor having schottky contact and a high frequency characteristic |
| 04/14/1992 | US5105241 Field effect transistor |
| 04/14/1992 | US5105233 Semiconductor luminescent device having organic/inorganic junction |
| 04/14/1992 | US5105232 Quantum field-effect directional coupler |
| 04/14/1992 | US5104848 Device and method of manufacturing a device |
| 04/14/1992 | US5104829 Method of manufacturing semiconductor integrated circuit |
| 04/14/1992 | US5104825 Method of producing a semiconductor device |
| 04/14/1992 | US5104822 Multilayer integrated memory circuits |
| 04/14/1992 | US5104819 Fabrication of interpoly dielctric for EPROM-related technologies |
| 04/14/1992 | US5104818 Isolation zone; reverse doping |
| 04/14/1992 | US5104816 Forming inclined isolation channel in semiconductor |
| 04/14/1992 | CA1298921C Bipolar transistor with polysilicon stringer base contact |
| 04/14/1992 | CA1298920C Protection of thyristors during turn-on |
| 04/14/1992 | CA1298906C Combined photovoltaic-thermoelectric solar cell and solar cell array |
| 04/09/1992 | DE4132105A1 Prodn. of curved structure for e.g. semiconductor accelerometer - comprises two=stage anisotropic etching of wafer using different masks |
| 04/08/1992 | EP0479504A2 Thin film transistor |
| 04/08/1992 | EP0479362A2 A temperature sensing circuit |
| 04/08/1992 | EP0478934A2 Permeable Base Transistor having a selectively grown emitter |
| 04/08/1992 | EP0478923A2 Method of fabricating self-aligned heterojunction bipolar transistors |
| 04/08/1992 | EP0478799A1 Semiconductor device having ferroelectric material and method of producing the same |
| 04/08/1992 | EP0478577A1 Apparatus and method for a dual thickness dielectric floating gate memory cell. |
| 04/08/1992 | EP0478573A1 An improved programmable semi-conductor resistive element |
| 04/07/1992 | US5103425 Zener regulated programming circuit for a nonvolatile memory |