| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/26/1992 | CA1301949C Device for interconnection and protection of a bare microwave componentchip |
| 05/21/1992 | WO1992009104A1 Silicon-on-porous-silicon; method of production and material |
| 05/21/1992 | EP0494184A4 Nmos device with integral esd protection. |
| 05/21/1992 | DE4138057A1 Semiconductor device for use in MOS transistor mfr. - comprising polycrystalline silicon gate electrode with defined crystal orientation, semiconductor substrate and pair of impurity regions |
| 05/21/1992 | CA2094237A1 Silicon-on-porous-silicon, method of production and material |
| 05/20/1992 | EP0486444A2 Double metal, bank erasable, flash-EPROM memory |
| 05/20/1992 | EP0486318A1 Semiconductor device for use in a light valve device, and process for manufacturing the same |
| 05/20/1992 | EP0486066A1 Method for forming crystal article |
| 05/20/1992 | EP0486063A2 Field-effect transistor |
| 05/20/1992 | EP0486047A2 Thin film semiconductor device, process for fabricating the same, and silicon film |
| 05/20/1992 | EP0485830A1 Process for the recrystallization of a pre-amorphized superficial zone of a semi-conductor |
| 05/20/1992 | EP0485648A1 Semiconductor device with a high blocking voltage |
| 05/20/1992 | EP0273047B1 Bidirectional vertical power mos device and fabrication method |
| 05/19/1992 | US5115296 Preferential oxidization self-aligned contact technology |
| 05/19/1992 | US5115290 Mos type semiconductor device and method for manufacturing the same |
| 05/19/1992 | US5115289 Semiconductor device and semiconductor memory device |
| 05/19/1992 | US5115288 Split-gate EPROM cell using polysilicon spacers |
| 05/19/1992 | US5115287 Step-cut insulated gate static induction transistors and method of manufacturing the same |
| 05/19/1992 | US5115155 CCD delay line |
| 05/19/1992 | US5114874 Method of making a sub-micron NMOS, PMOS and CMOS devices with methods for forming sub-micron contacts |
| 05/19/1992 | US5114871 Manufacturing diamond electronic devices |
| 05/19/1992 | US5114870 Method for manufacturing field effect transistors |
| 05/19/1992 | US5114869 Semiconductors |
| 05/19/1992 | US5114867 Semiconductors |
| 05/19/1992 | US5114833 Charge-coupled device and process of making the device |
| 05/14/1992 | WO1992003850A3 Image sensor having transfer gate between the photodiode and the ccd element |
| 05/14/1992 | DE4035500A1 Elektronischer schalter Electronic switch |
| 05/13/1992 | EP0485174A1 Power mosfet transistor circuit with active clamp |
| 05/13/1992 | EP0485125A2 Charge transfer device, process for its manufacture, and method driving the device |
| 05/13/1992 | EP0485059A2 Semiconductor device including a pin-diode having high breakdown voltage |
| 05/13/1992 | EP0485018A2 Electrically erasable and programmable read only memory with trench structure |
| 05/13/1992 | EP0484987A2 Thin film transistor |
| 05/13/1992 | EP0484968A2 Field effect transistor |
| 05/13/1992 | EP0484965A2 Active matrix substrate |
| 05/13/1992 | EP0484732A1 Controlling method of a tunnel cathode. |
| 05/13/1992 | EP0371069B1 Process for manufacturing microsensors with integrated signal processing |
| 05/12/1992 | US5113305 Protection device against the breakdown of bipolar transistors in an integrated driving circuit for a power device with a resonant load |
| 05/12/1992 | US5113263 Reduced size accurate solid-state camera having low power consumption |
| 05/12/1992 | US5113237 Planar pn-junction of high electric strength |
| 05/12/1992 | US5113236 Integrated circuit device particularly adapted for high voltage applications |
| 05/12/1992 | US5113234 Semiconductor device having reduced contact resistance between diffusion regions and wiring layer |
| 05/12/1992 | US5113231 Quantum-effect semiconductor devices |
| 05/12/1992 | US5113230 Semiconductor device having a conductive layer for preventing insulation layer destruction |
| 05/12/1992 | US5113072 Device having superlattice structure, and method of and apparatus for manufacturing the same |
| 05/12/1992 | US5112774 Method of fabricating a high-voltage semiconductor device having a rectifying barrier |
| 05/12/1992 | US5112771 Method of fibricating a semiconductor device having a trench |
| 05/12/1992 | US5112766 Self-aligned gates |
| 05/12/1992 | US5112764 Method for the fabrication of low leakage polysilicon thin film transistors |
| 05/12/1992 | US5112761 Bicmos process utilizing planarization technique |
| 05/12/1992 | CA1300764C Semiconductor devices having closely spaced device regions formed using a selfaligning reverse image fabrication process |
| 05/12/1992 | CA1300763C Semiconductor device radiation hardened mesfet |
| 05/10/1992 | CA2055164A1 Field effect transistor |
| 05/07/1992 | CA2054675A1 Power mosfet transistor circuit with active clamp |
| 05/06/1992 | EP0484321A1 Method of fabricating insulated gate semiconductor device |
| 05/06/1992 | EP0484096A2 Method of making recessed T-shaped Schottky gate field effect transistor |
| 05/06/1992 | EP0484056A1 Process for forming germanium-containing layer on oxygen-containing insulation layer |
| 05/06/1992 | EP0483824A1 MIS transistor with heterojunction |
| 05/06/1992 | EP0483487A1 Self-aligned epitaxial base transistor and method for fabricating same |
| 05/06/1992 | EP0256053B1 Matrix of interconnected transistors in thin layers and production method thereof |
| 05/06/1992 | EP0116651B1 Photothyristor |
| 05/05/1992 | US5111430 Non-volatile memory with hot carriers transmitted to floating gate through control gate |
| 05/05/1992 | US5111355 Thin films, high capacitance |
| 05/05/1992 | US5111272 Semiconductor device having element regions electrically isolated from each other |
| 05/05/1992 | US5111270 Three-dimensional contactless non-volatile memory cell |
| 05/05/1992 | US5111269 Bipolar transistor structure containing a resistor which assures reduction in layout area |
| 05/05/1992 | US5111268 Semiconductor device with improved turn-off capability |
| 05/05/1992 | US5111267 Semiconductor device having a multilayer electrode structure and method for fabricating the same |
| 05/05/1992 | US5111266 Semiconductor device having a region doped to a level exceeding the solubility limit |
| 05/05/1992 | US5111265 Collector-top type transistor causing no deterioration in current gain |
| 05/05/1992 | US5111261 Silicon thin film transistor with an intrinsic silicon active layer formed within the boundary defined by the edges of the gate electrode and the impurity containing silicon layer |
| 05/05/1992 | US5111260 Polycrystalline-channel field effect transistor |
| 05/05/1992 | US5111258 Semiconductor device with a multi-stepped source region and method for producing the same |
| 05/05/1992 | US5111257 Electronic integrated circuit having an electrode layer for element isolation |
| 05/05/1992 | US5111256 High speed semiconductor device and an optelectronic device |
| 05/05/1992 | US5111255 Buried channel heterojunction field effect transistor |
| 05/05/1992 | US5111254 Floating gate array transistors |
| 05/05/1992 | US5111253 Multicellular FET having a Schottky diode merged therewith |
| 05/05/1992 | US5110764 Method of making a beveled semiconductor silicon wafer |
| 05/05/1992 | US5110751 Etching, vapor deposition of gate metal |
| 05/05/1992 | US5110750 Semiconductor device and method of making the same |
| 05/05/1992 | US5110749 Method for manufacturing semiconductor device |
| 05/05/1992 | US5110748 Glass, silicon |
| 05/05/1992 | US5110438 Reduced pressure surface treatment apparatus |
| 04/30/1992 | WO1992007385A1 Fast turn-off thyristor structure |
| 04/30/1992 | WO1992007384A1 Piso electrostatic discharge protection device |
| 04/30/1992 | WO1992007383A1 Semiconductor device |
| 04/30/1992 | WO1992007382A1 Structure of semiconductor device and manufacturing method thereof |
| 04/29/1992 | EP0482726A2 Heterojunction field-effect transistor |
| 04/29/1992 | EP0482241A1 Integrated bipolar transistor |
| 04/29/1992 | EP0482232A1 Process for manufacturing a doped polycide layer on a semiconductor substrate |
| 04/28/1992 | US5109361 Electrically page erasable and programmable read only memory |
| 04/28/1992 | US5109357 DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line |
| 04/28/1992 | US5109266 Semiconductor integrated circuit device having high breakdown-voltage to applied voltage |
| 04/28/1992 | US5109263 Semiconductor device with optimal distance between emitter and trench isolation |
| 04/28/1992 | US5109262 Bipolar transistor with reduced collector resistance |
| 04/28/1992 | US5109260 Silicon thin film transistor and method for producing the same |
| 04/28/1992 | US5109256 Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication |
| 04/28/1992 | US5108952 Method of depositing a tungsten film |
| 04/28/1992 | US5108945 Maintaining planarization |
| 04/28/1992 | US5108944 Method of manufacturing a semiconductor device |