| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/17/1992 | EP0490640A1 Electronic devices, particularly for use as electro-optic devices |
| 06/17/1992 | EP0490535A2 Transistor with inverse silicide T-gate structure |
| 06/17/1992 | EP0490531A2 Devices based on Si/Ge |
| 06/17/1992 | EP0490486A2 Micromachined differential pressure transducers and method of producing the same |
| 06/17/1992 | EP0490437A1 Integrated circuit device particularly adapted for high voltage applications |
| 06/17/1992 | EP0490246A1 Solid-state imager |
| 06/17/1992 | EP0490236A2 Fabrication process for Schottky barrier diodes on a substrate |
| 06/17/1992 | EP0490111A1 A low capacitance bipolar junction transistor and fabrication process therefor |
| 06/17/1992 | EP0489992A1 Multiaxial transducer interconnection apparatus |
| 06/17/1992 | DE4039662A1 Monolithisch integrierte halbleiteranordnung Monolithically integrated semiconductor arrangement |
| 06/17/1992 | CN1017110B Superconducting devices |
| 06/16/1992 | US5122856 Semiconductor device |
| 06/16/1992 | US5122854 MOS control thyristor |
| 06/16/1992 | US5122853 Electronic component, especially a permeable base transistor |
| 06/16/1992 | US5122851 Trench JFET integrated circuit elements |
| 06/16/1992 | US5122849 Silicon thin film transistor |
| 06/16/1992 | US5122848 Insulated-gate vertical field-effect transistor with high current drive and minimum overlap capacitance |
| 06/16/1992 | US5122847 Non-volatile semiconductor memory with CVD tunnel oxide |
| 06/16/1992 | US5122812 Thermal inkjet printhead having driver circuitry thereon and method for making the same |
| 06/16/1992 | US5122474 Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough |
| 06/16/1992 | CA1303754C Bipolar hot electron transistor |
| 06/16/1992 | CA1303689C Zero power, electrically alterable, nonvolatile latch |
| 06/11/1992 | WO1992010002A1 Narrow width eeprom with single diffusion electrode formation |
| 06/11/1992 | WO1992009974A1 Method and apparatus for testing lcd panel array prior to shorting bar removal |
| 06/10/1992 | EP0489710A2 A mirror wafer of compound semiconductor |
| 06/10/1992 | EP0489559A1 LDD metal-oxide semiconductor field-effect transistor and method of making the same |
| 06/10/1992 | EP0489523A1 High-speed point contact diode |
| 06/10/1992 | EP0489262A1 Lateral bipolar transistor with edge-strapped base contact and method of fabricating same |
| 06/09/1992 | US5121237 Light shield layer formed of crosslinked acrylic resin in which carbon black particles are dispersed |
| 06/09/1992 | US5121194 Substrate output for a semiconductor device and a method of fabricating the same |
| 06/09/1992 | US5121189 Semiconductor device and method of manufacturing the same |
| 06/09/1992 | US5121184 Bipolar transistor containing a self-aligned emitter contact and method for forming transistor |
| 06/09/1992 | US5121178 Silicon thin film transistor |
| 06/09/1992 | US5121177 Silicon thin film transistor |
| 06/09/1992 | US5121176 MOSFET structure having reduced gate capacitance |
| 06/09/1992 | US5121174 Gate-to-ohmic metal contact scheme for III-V devices |
| 06/09/1992 | US5120673 Process of fabricating field effect transistor with ldd structure |
| 06/09/1992 | US5120670 Thermal process for implementing the planarization inherent to stacked etch in virtual ground EPROM memories |
| 06/09/1992 | US5120669 Sufficient separation between channel barrier and source and drain for attaining high source/drain breakdwon voltage |
| 06/09/1992 | US5120668 Confomral layers of polysilicon, metal and sielectric, preferential etching |
| 06/09/1992 | US5120666 Manufacturing method for semiconductor device |
| 06/09/1992 | US5120571 Floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates |
| 06/09/1992 | CA1303281C Patterned thin film and process for preparing the same |
| 06/09/1992 | CA1303245C Semiconductor switching device |
| 06/09/1992 | CA1302675C Thin film and device having the same |
| 06/08/1992 | CA2050649A1 Devices based on si/ge |
| 06/04/1992 | DE4139157A1 Ohmic electrode material for semiconductor ceramic - comprising aluminium@, silicon@ and glass frit |
| 06/03/1992 | EP0488804A1 Non-volatile semiconductor memory device |
| 06/03/1992 | EP0488677A2 Semiconductor device of band-to-band tunneling type |
| 06/03/1992 | EP0488647A2 A solid-state imaging device |
| 06/03/1992 | EP0488440A2 Process of introduction and diffusion of platinum ions in a slice of silicon |
| 06/03/1992 | EP0488229A2 Semiconductor device and method for production thereof |
| 06/03/1992 | EP0488154A2 Contact for semiconductor device and method of manufacturing the same |
| 06/03/1992 | EP0488148A2 Method of manufacturing a MOS-type field-effect transistor |
| 06/03/1992 | EP0487937A1 A semiconductor device having punch-through protected buried contacts and method for making the same |
| 06/03/1992 | EP0487922A2 High speed switching electron device |
| 06/03/1992 | EP0487869A1 Turn-off power semiconductor device |
| 06/03/1992 | EP0487739A1 Semiconductor device and a method of manufacturing such a semiconductor device |
| 06/03/1992 | EP0487540A1 Large chip with switching transistors manufactured by planar technology |
| 06/02/1992 | US5119329 Memory cell based on ferro-electric non volatile variable resistive element |
| 06/02/1992 | US5119267 Capacitor for an integrated circuit |
| 06/02/1992 | US5119171 Semiconductor die having rounded or tapered edges and corners |
| 06/02/1992 | US5119162 Integrated power DMOS circuit with protection diode |
| 06/02/1992 | US5119159 Lateral dmosfet semiconductor device with reduced on resistance and device area |
| 06/02/1992 | US5119157 Semiconductor device with self-aligned contact to buried subcollector |
| 06/02/1992 | US5119153 Small cell low contact resistance rugged power field effect devices and method of fabrication |
| 06/02/1992 | US5119152 MOS semiconductor device having LDD structure |
| 06/02/1992 | US5119151 Quasi-one-dimensional channel field effect transistor having gate electrode with stripes |
| 06/02/1992 | US5119149 Gate-drain shield reduces gate to drain capacitance |
| 06/02/1992 | US5119148 Fast damper diode and method |
| 06/02/1992 | US5118639 Process for the formation of elevated source and drain structures in a semiconductor device |
| 06/02/1992 | US5118638 Doping, masking, isotropic etching to reduce thickness of dielectric |
| 06/02/1992 | US5118637 Method of fabricating hemt device with selective etching of gallium arsenide antimonide |
| 06/02/1992 | US5118635 Integrated high-voltage bipolar power transistor and low voltage mos power transistor structure in the emitter switching configuration and relative manufacturing process |
| 06/02/1992 | US5118632 Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| 06/02/1992 | US5118387 Dry etching method |
| 06/02/1992 | CA1302521C Light quenchable thyristor device |
| 05/30/1992 | CA2056801A1 Semiconductor device of band-to-band tunneling type |
| 05/29/1992 | WO1992009107A1 Electronic switch, in particular in the form of a transistor |
| 05/27/1992 | EP0487468A2 Flash-EPROM memory with single metal level, erasable per blocks of cells |
| 05/27/1992 | EP0487220A2 SOI-Field effect transistor and method of manufacturing the same |
| 05/27/1992 | EP0487192A2 Opto-electronic integrated circuit having a transmitter of long wavelength |
| 05/27/1992 | EP0487101A2 Electrically device with a doped amorphous silicon channel |
| 05/27/1992 | EP0487083A2 SOI type vertical channel field effect transistor and process of manufacturing the same |
| 05/27/1992 | EP0487022A2 A method of simultaneously fabricating an insulated gate-field-effect transistor and a bipolar transistor |
| 05/27/1992 | EP0486496A1 Thyristor |
| 05/27/1992 | DE4037492A1 FET with semiconductor in channel between drain and source electrode - whose length for drain-source current has irregular cross=section between both electrodes |
| 05/26/1992 | US5117271 Low capacitance bipolar junction transistor and fabrication process therfor |
| 05/26/1992 | US5117269 Eprom memory array with crosspoint configuration |
| 05/26/1992 | US5117268 Thermionic emission type static induction transistor and its integrated circuit |
| 05/26/1992 | US5117267 Semiconductor heterojunction structure |
| 05/26/1992 | US5116789 Strontium aluminosilicate glasses for flat panel displays |
| 05/26/1992 | US5116788 Alkali metal oxide-free; liquid crystal; durability, chemical resistance |
| 05/26/1992 | US5116780 Method of manufacturing a semiconductor device having improved contact resistance characteristics |
| 05/26/1992 | US5116774 Semiconductor substrate; several semiconductor layers with channel layer having at least one additional layer; ohmic, gate contacts on layers; removing parts of additional layer between contacts; gate, ohmic metal; source, drain regions |
| 05/26/1992 | US5116773 Heterojunction; epitaxy growth of gallium indium arsenide/ phosphide/ layers, N-type indium phosphide layer, P-type indium phosphide layer for P-N junction; etching; photoresist mask; gate, source-drain metal evaporation |
| 05/26/1992 | US5116771 Silicon channel regions between silicon source and drain regions of epitaxial silicon film on insulator substrate, protective layer over silicon film, mask layer, removing regions of mask layer, thinning silicon underlying openings |
| 05/26/1992 | US5116770 Method for fabricating bipolar semiconductor devices |
| 05/26/1992 | CA1301957C Germanium-silicon semiconductor heterostructures |
| 05/26/1992 | CA1301955C Semiconductor device mesfet with upper and lower layers |