| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/14/1992 | US5130765 Element having a nonlinear transmission characteristic |
| 07/14/1992 | US5130763 Integrated semiconductor device with an insulated-gate field effect transistor having a negative transconductance zone |
| 07/14/1992 | US5130760 Bidirectional surge suppressor Zener diode circuit with guard rings |
| 07/14/1992 | US5130273 High resistance region |
| 07/14/1992 | US5130272 Masking |
| 07/14/1992 | US5130267 Split metal plate capacitor and method for making the same |
| 07/14/1992 | US5130264 Method of making a thin film transistor |
| 07/14/1992 | US5130263 Method for photolithographically forming a selfaligned mask using back-side exposure and a non-specular reflecting layer |
| 07/14/1992 | US5130262 Internal current limit and overvoltage protection method |
| 07/14/1992 | US5130261 Method of rendering the impurity concentration of a semiconductor wafer uniform |
| 07/14/1992 | CA1305261C Topographic pattern delineated power mosfet with profile tailored processed source |
| 07/14/1992 | CA1305260C Semiconductor device having array of conductive rods |
| 07/09/1992 | WO1992011659A1 High-voltage circuit component |
| 07/09/1992 | DE4200284A1 Connecting layer for semiconductor - in which device has semiconductor substrate, first insulating layer, first conducting layer, and second conducting layer of higher conductivity |
| 07/09/1992 | DE4137058A1 Improved step-coverage of electrode on semiconductor surface - uses preferential etching of the edge of surface layer to produce bevel |
| 07/08/1992 | EP0493897A2 Thermal ink jet printhead having driver circuitry thereon and method for making the same |
| 07/08/1992 | EP0493854A1 Integrated structure of a bipolar power transistor and a low voltage bipolar transistor in the emitter switching or semibridge configurations and associated manufacturing processes |
| 07/08/1992 | EP0493853A1 A method for fabricating a bipolar transistor |
| 07/08/1992 | EP0493797A2 GaAs heterostructure metal-insulator-semiconductor integrated circuit and method for its fabrication |
| 07/08/1992 | EP0493706A1 Biaxial-stress barrier shifts in pseudomorphic tunnel devices |
| 07/08/1992 | EP0493640A1 EEPROM cell with single metal level gate having a (read) interface toward the external circuitry isolated from the (write/erase) interface toward the programming circuitry |
| 07/08/1992 | EP0493621A1 Semiconductor device |
| 07/08/1992 | EP0493614A1 Method for manufacturing semiconductor device |
| 07/08/1992 | EP0493520A1 Hot-carrier suppressed sub-micron misfet device. |
| 07/08/1992 | EP0478577A4 Apparatus and method for a dual thickness dielectric floating gate memory cell |
| 07/08/1992 | EP0478573A4 An improved programmable semi-conductor resistive element |
| 07/08/1992 | EP0429509A4 Method and apparatus for forming a side wall contact in a nonvolatile electrically alterable memory cell |
| 07/08/1992 | EP0417197A4 Deposited tunneling oxide |
| 07/08/1992 | EP0282520B1 Non-volatile memory with floating grid and without thick oxide |
| 07/07/1992 | US5128742 Variable gain switch |
| 07/07/1992 | US5128741 Methods producing on a semi-conductor substructure a bipolar transistor, or a bipolar and a field effect transistor or a bipolar and a field effect transistor with a complementary field effect transistor and devices resulting from the methods |
| 07/07/1992 | US5128739 MIS type semiconductor device formed in a semiconductor substrate having a well region |
| 07/07/1992 | US5128734 Surface channel hact |
| 07/07/1992 | US5128733 Silicon mesa transistor structure |
| 07/07/1992 | US5128730 Semiconductor device and a circuit suitable for use in an intelligent power switch |
| 07/07/1992 | US5128567 Output circuit of semiconductor integrated circuit with reduced power source line noise |
| 07/07/1992 | US5128277 Rediffusion |
| 07/07/1992 | US5128275 Controlling doping |
| 07/07/1992 | US5128271 High performance vertical bipolar transistor structure via self-aligning processing techniques |
| 07/07/1992 | CA1304807C Metal insulation structure and liquid crystal display device |
| 07/01/1992 | EP0493166A1 Process for manufacturing submicronic gates on a semiconductor device |
| 07/01/1992 | EP0493113A2 A method for producing a thin film transistor and an active matrix substrate for liquid crystal display devices |
| 07/01/1992 | EP0492991A2 A method of gettering and for defect formation control during the fabrication of double-diffused integrated circuit cells and cell produced therewith |
| 07/01/1992 | EP0492986A2 Accelerometer |
| 07/01/1992 | EP0492666A2 MESFET channel |
| 07/01/1992 | EP0492558A2 Semiconductor device comprising a high speed switching bipolar transistor |
| 07/01/1992 | EP0492339A2 Noise reduction technique for breakdown diodes |
| 07/01/1992 | EP0491786A1 OHMIC CONTACTS FOR GaAs AND GaAlAs |
| 07/01/1992 | EP0491729A1 Controllable temperature-compensated voltage-limiting device |
| 07/01/1992 | EP0491718A1 Semiconductor component |
| 06/30/1992 | US5126911 Integrated circuit self-protected against reversal of the supply battery polarity |
| 06/30/1992 | US5126828 Wafer scale integration device |
| 06/30/1992 | US5126813 Semiconductor pressure sensor device with two semiconductor pressure sensor chips and a method of manufacturing thereof |
| 06/30/1992 | US5126811 Charge transfer device with electrode structure of high transfer efficiency |
| 06/30/1992 | US5126809 Semiconductor non-volatile memory |
| 06/30/1992 | US5126808 Flash EEPROM array with paged erase architecture |
| 06/30/1992 | US5126807 Vertical MOS transistor and its production method |
| 06/30/1992 | US5126806 Lateral insulated gate bipolar transistor |
| 06/30/1992 | US5126805 Germanium silicide interface |
| 06/30/1992 | US5126802 Photoelectric cell; containing electroconductive organic layer |
| 06/30/1992 | US5126288 Etching silicon oxynitride and and silicon nitride layers through titanium mask |
| 06/30/1992 | US5126284 Method of inductively contacting semiconductor regions |
| 06/30/1992 | US5126283 Forming a protective coating of aluminum oxide, acts as oxidation and chemical resistance |
| 06/30/1992 | US5126278 High speed operation; doping base region with germanium, tin, boron, boron fluoride |
| 06/30/1992 | US5126277 Doping gallium arsenide with silicon; forming deep trap level by low temperature annealing |
| 06/30/1992 | US5125275 Pressure sensor package |
| 06/28/1992 | CA2058465A1 Field effect transistor |
| 06/25/1992 | WO1992010855A1 Monolithic integrated semiconductor device |
| 06/25/1992 | DE4108611A1 Hochspannungsbauelement High voltage component |
| 06/24/1992 | EP0491581A2 Dense vertical programmable read only memory cell structures and processes for making them |
| 06/24/1992 | EP0491567A1 Integrated sensor assembly |
| 06/24/1992 | EP0491433A2 Method of forming conductive region on silicon semiconductor material, and silicon semiconductor device with such region |
| 06/24/1992 | EP0491098A1 Digital-to-analog converting field effect device and circuitry |
| 06/24/1992 | EP0476108A4 Cold cathode field emission device having integral control or controlled non-fed devices |
| 06/24/1992 | CN1062240A Optical controlled bidirectional thyrister design |
| 06/23/1992 | US5125007 Thin-film soi-mosfet with a body region |
| 06/23/1992 | US5124796 Charge coupled device having a circuit for handling a fundamental clock signal |
| 06/23/1992 | US5124779 Ti-Al better conesion, reliable ohmic contact |
| 06/23/1992 | US5124775 Semiconductor device with oxide sidewall |
| 06/23/1992 | US5124773 Conductivity-modulation metal oxide semiconductor field effect transistor |
| 06/23/1992 | US5124772 Insulated gate bipolar transistor with a shortened carrier lifetime region |
| 06/23/1992 | US5124771 Semiconductor device |
| 06/23/1992 | US5124770 Field effect transistor with alpha particle protection |
| 06/23/1992 | US5124769 Thin film transistor |
| 06/23/1992 | US5124768 Thin film transistor and active matrix assembly including same |
| 06/23/1992 | US5124764 Symmetric vertical MOS transistor with improved high voltage operation |
| 06/23/1992 | US5124763 Insulated-gate type integrated circuit |
| 06/23/1992 | US5124762 Multilayers on a gallium arsenide substrate; transistors having less gate current leakage and greater voltage range |
| 06/23/1992 | US5124761 Semiconductor apparatus |
| 06/23/1992 | US5124276 Filling contact hole with selectively deposited EPI and poly silicon |
| 06/23/1992 | US5124275 Method of manufacturing by autoalignment an integrated semiconductor device comprising at least the formation of an encapsulated first electrode contact provided with spacers and of a second autoaligned electrode contact on the former |
| 06/23/1992 | US5124270 High speed; low emitter resistance |
| 06/23/1992 | US5123975 Single crystal silicon substrate |
| 06/23/1992 | US5123847 Method of manufacturing flat panel backplanes, display transistors |
| 06/20/1992 | CA2058024A1 Integrated sensor array |
| 06/17/1992 | EP0490877A2 Interconnection for an integrated circuit |
| 06/17/1992 | EP0490787A1 Protection circuit limiting overvoltages between selected limits and its monolithic integration |
| 06/17/1992 | EP0490786A1 Programmable protection circuit and monolithic manufacturing thereof |
| 06/17/1992 | EP0490761A1 Method of realising an electrically conductive diffusion barrier at the metal/silicon interface of an MOS transistor, and corresponding transistor |
| 06/17/1992 | EP0490759A1 Method of making the metallisation on a semiconductor device |