| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) | 
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| 08/04/1992 | US5136358 Multi-layered wiring structure | 
| 08/04/1992 | US5136350 Semiconductor mosfet having a projecting T-shaped portion | 
| 08/04/1992 | US5136349 Closed cell transistor with built-in voltage clamp | 
| 08/04/1992 | US5136348 Structure and manufacturing method for thin-film semiconductor diode device | 
| 08/04/1992 | US5136347 Semiconductor structure | 
| 08/04/1992 | US5136346 Photon stimulated variable capacitance effect devices | 
| 08/04/1992 | US5135885 Method of manufacturing silicon carbide fets | 
| 08/04/1992 | US5135880 Method of manufacturing a semiconductor device | 
| 08/04/1992 | US5135878 Diffusion barrier of TA-SI-N; reliability | 
| 08/04/1992 | CA1306072C Refractory metal - titanium nitride conductive structures and processes for forming the same | 
| 07/31/1992 | WO1992014268A1 Polysilicon thin film transistor | 
| 07/31/1992 | CA2100065A1 Polysilicon thin film transistor | 
| 07/30/1992 | DE4200753A1 MOSFET with very short channel lengths - uses a multiple implant of dopant in source-drain regions to provide an abrupt, shallow box-shaped dopant profile to minimise punch through | 
| 07/29/1992 | EP0496639A2 Polysilicon thin film semiconductor device | 
| 07/29/1992 | EP0496637A2 High purity conductive films and their use in semiconductors | 
| 07/29/1992 | EP0496360A2 Semiconductor memory cell | 
| 07/29/1992 | EP0496357A2 Charge coupled device | 
| 07/29/1992 | EP0496032A2 Method of making strain gauged diaphragm-type pressure transducers | 
| 07/29/1992 | EP0495994A1 Semiconductor device and its manufacturing method | 
| 07/29/1992 | EP0233202B1 Fabricating a semiconductor device with buried oxide | 
| 07/29/1992 | CN1017671B Solid switch device | 
| 07/29/1992 | CN1017669B Method of manufacturing semiconductor device | 
| 07/28/1992 | US5134671 Monolithic integrated optical amplifier and photodetector | 
| 07/28/1992 | US5134583 Nonvolatile semiconductor memory device having redundant data lines and page mode programming | 
| 07/28/1992 | US5134506 Liquid crystal device having a phase plate and particular dye composition | 
| 07/28/1992 | US5134453 Bulk transport charge-coupled device with linear input characteristic | 
| 07/28/1992 | US5134452 MIS type FET semiconductor device with gate insulating layer having a high dielectric breakdown strength | 
| 07/28/1992 | US5134451 MOS semiconductive device | 
| 07/28/1992 | US5134450 Parallel transistor circuit with non-volatile function | 
| 07/28/1992 | US5134448 MOSFET with substrate source contact | 
| 07/28/1992 | US5134447 Neutral impurities to increase lifetime of operation of semiconductor devices | 
| 07/28/1992 | US5134446 Gallium arsenide, gallium indium arsenide | 
| 07/28/1992 | US5134089 Thick field oxide | 
| 07/28/1992 | US5134083 Bipolar junction transistor | 
| 07/23/1992 | WO1992012575A1 Semiconductor device | 
| 07/23/1992 | WO1992012541A1 Integrated power switch structure | 
| 07/23/1992 | WO1992012540A1 Semiconductor device | 
| 07/23/1992 | WO1992012518A1 Storage cell arrangement and process for operating it | 
| 07/23/1992 | WO1992012498A1 Semiconductor device | 
| 07/23/1992 | WO1992012453A1 Single crystal silicon arrayed devices for display panels | 
| 07/23/1992 | DE4200884A1 Integrated semiconductor circuit with connector to external circuit - has bipolar transistor with collector terminal coupled to bus, and emitter and base terminals to reference potential | 
| 07/22/1992 | EP0495562A2 Field-effect semiconductor device and method of manufacturing the same | 
| 07/22/1992 | EP0495541A1 Method of manufacturing a semiconductor device provided with a field effect transistor | 
| 07/22/1992 | EP0495523A1 CCD linear image sensor | 
| 07/22/1992 | EP0495500A2 Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification | 
| 07/22/1992 | EP0495494A1 Electrically erasable phase change memory | 
| 07/22/1992 | EP0495492A2 Non-volatile memory cell structure and process for forming same | 
| 07/22/1992 | EP0495452A2 Field effect transistor | 
| 07/22/1992 | EP0495436A2 Quantum phase interference transistor | 
| 07/22/1992 | EP0495114A1 Semiconductor device | 
| 07/22/1992 | EP0266412B1 Surface mountable diode | 
| 07/22/1992 | CN1062995A Method for improving electro static discharge characteristic of semiconductor device | 
| 07/22/1992 | CN1017575B Covering material for improving ba-y-cu-ag-o super conductive material working property | 
| 07/21/1992 | US5132866 Device for protection against the formation of parasitic transistors in an integrated circuit for driving an inductive load | 
| 07/21/1992 | US5132821 Color lcd including transistors having layer thicknesses selected for small photocurrents | 
| 07/21/1992 | US5132820 TFT active matrix liquid crystal display devices | 
| 07/21/1992 | US5132769 Semiconductor device with high withstand voltage | 
| 07/21/1992 | US5132768 Semiconductor component with turn-off facility | 
| 07/21/1992 | US5132767 Double gate GTO thyristor | 
| 07/21/1992 | US5132766 Doped metal silicon alloy | 
| 07/21/1992 | US5132764 Multilayer base heterojunction bipolar transistor | 
| 07/21/1992 | US5132760 Electron wave deflection in modulation doped and other doped semiconductor structures | 
| 07/21/1992 | US5132758 Semiconductor device and manufacturing method thereof | 
| 07/21/1992 | US5132757 LDD field effect transistor having a large reproducible saturation current | 
| 07/21/1992 | US5132756 Method of manufacturing semiconductor devices | 
| 07/21/1992 | US5132755 Field effect transistor | 
| 07/21/1992 | US5132754 Thin film silicon semiconductor device and process for producing thereof | 
| 07/21/1992 | US5132753 Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs | 
| 07/21/1992 | US5132752 Field effect transistor | 
| 07/21/1992 | US5132749 Semiconductor device | 
| 07/21/1992 | US5132746 Biaxial-stress barrier shifts in pseudomorphic tunnel devices | 
| 07/21/1992 | US5132745 Chromium, molybdenum | 
| 07/21/1992 | US5132656 Floating-gate charge-balance ccd | 
| 07/21/1992 | US5132386 Insulating resin composition and semiconductor device using the same | 
| 07/21/1992 | US5132247 Quantum effective device and process for its production | 
| 07/21/1992 | US5132244 Growth-modified thermal oxidation for thin oxides | 
| 07/21/1992 | US5132239 Process for manufacturing eeprom memory cells having a single level of polysilicon and thin oxide by using differential oxidation | 
| 07/21/1992 | US5132238 Method of manufacturing semiconductor device utilizing an accumulation layer | 
| 07/21/1992 | US5132237 Insulative layer; depositing and etching first layer to form members separated by spaces; dielectric on members; isotropically depositing second layer filling spaces, covering members; anisotropically etching second layer; gates, contact | 
| 07/21/1992 | US5132235 Using dopants with fast and slow diffusion times, reducing current gain | 
| 07/21/1992 | CA1305398C Method for producing high yield electrical contacts to n _amorphous silicon | 
| 07/16/1992 | DE4100444A1 Integrierte leistungsschalterstruktur Integrated power switch structure | 
| 07/15/1992 | EP0494628A2 Multigato SOI-type thin film transistor and manufacturing method therefor | 
| 07/15/1992 | EP0494625A1 Semiconductor device for improving high-frequency characteristics and avoiding chip cracking | 
| 07/15/1992 | EP0494598A1 Method of processing a semiconductor substrate | 
| 07/15/1992 | EP0494597A1 Trench-gate power semiconductor device | 
| 07/15/1992 | EP0494395A2 A graded channel field effect transistor | 
| 07/15/1992 | EP0494313A1 Semiconductor device provided with ferroelectric material | 
| 07/15/1992 | EP0494309A1 Method of manufacturing semiconductor device | 
| 07/15/1992 | EP0494184A1 Nmos device with integral esd protection | 
| 07/15/1992 | EP0332658A4 Enhanced density modified isoplanar process | 
| 07/15/1992 | EP0172878B1 A bipolar transistor with active elements formed in slots | 
| 07/15/1992 | CA2059232A1 Field effect transistor | 
| 07/14/1992 | US5130829 Active matrix liquid crystal display devices having a metal light shield for each switching device electrically connected to an adjacent row address conductor | 
| 07/14/1992 | US5130773 Semiconductor device with photosensitivity | 
| 07/14/1992 | US5130772 Indium tin oxide electrode | 
| 07/14/1992 | US5130770 Integrated circuit in silicon on insulator technology comprising a field effect transistor | 
| 07/14/1992 | US5130769 Nonvolatile memory cell | 
| 07/14/1992 | US5130767 Plural polygon source pattern for mosfet | 
| 07/14/1992 | US5130766 Quantum interference type semiconductor device |