| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/01/1992 | CA1307054C Field effect transistor and method of forming a mask pattern for the production of transistor |
| 08/29/1992 | CA2059408A1 Fabrication of aluminum-containing semiconductor devices |
| 08/28/1992 | WO1992016023A1 Visible light emitting diodes fabricated from soluble semiconducting polymers |
| 08/26/1992 | EP0500234A2 Method for making diaphragm-based sensors and apparatus constructed therewith |
| 08/26/1992 | EP0500233A2 Bipolar transistor structure & BICMOS IC fabrication process |
| 08/26/1992 | EP0499985A2 Manufacturing method of semiconductor memory device |
| 08/26/1992 | EP0499979A2 Electro-optical device |
| 08/26/1992 | EP0499842A2 Thin film capacitor |
| 08/25/1992 | US5142640 Trench gate metal oxide semiconductor field effect transistor |
| 08/25/1992 | US5142639 Semiconductor memory device having a stacked capacitor cell structure |
| 08/25/1992 | US5142350 Transistor having cubic boron nitride layer |
| 08/25/1992 | US5142349 Self-doped high performance complementary heterojunction field effect transistor |
| 08/25/1992 | US5142348 Lateral thyristor |
| 08/25/1992 | US5142347 Power semiconductor component with emitter shorts |
| 08/25/1992 | US5142344 Insulated gate field effect transistor and its manufacturing method |
| 08/25/1992 | US5142341 Channel layers for controlling electron flow are separated by barrier layers which contain doping layer; superconductivity |
| 08/25/1992 | US5142331 Photoelectric conversion semiconductor device |
| 08/25/1992 | US5141895 Semiconductor device process using diffusant penetration and source layers for shallow regions |
| 08/25/1992 | US5141894 Doping to form zone limiting spread of dislocations |
| 08/25/1992 | US5141891 Forming polysilicon source/drain and lightly doped drain structures; miniaturization |
| 08/25/1992 | US5141889 Method of making enhanced insulated gate bipolar transistor |
| 08/25/1992 | US5141888 Process of manufacturing semiconductor integrated circuit device having trench and field isolation regions |
| 08/25/1992 | US5141885 Method of fabrication of thin film transistors |
| 08/25/1992 | US5141884 Preventing formation of bird's beak and current leakage |
| 08/25/1992 | US5141883 Process for the manufacture of power-mos semiconductor devices |
| 08/25/1992 | US5141880 Doping single-crystal silicon layer, covering it with silicon dioxide film, then doping barrier electrode area using focused ion beam; simplification, flatness |
| 08/25/1992 | US5141879 Method of fabricating a FET having a high trap concentration interface layer |
| 08/25/1992 | CA1306814C Bridged emitter doped-silicide transistor |
| 08/20/1992 | WO1992014269A1 Power metal-oxide-semiconductor field effect transistor |
| 08/20/1992 | WO1992014267A1 Bipolar transistor feature and process for producing it |
| 08/19/1992 | EP0499553A1 Monolithic structure comprising two sets of bidirectional protection diodes |
| 08/19/1992 | EP0499403A2 Silicon bipolar transistor and method of fabricating the same |
| 08/19/1992 | EP0498993A2 Field effect transistor and production method therefor |
| 08/18/1992 | US5140623 Input bias circuit for gate input type charge transfer device for controlling the potential level of the input signal |
| 08/18/1992 | US5140406 Crimp-type semiconductor device having non-alloy structure |
| 08/18/1992 | US5140403 Used for image sensors, printer heads and can operate at high speed |
| 08/18/1992 | US5140400 Semiconductor device and photoelectric converting apparatus using the same |
| 08/18/1992 | US5140399 Heterojunction bipolar transistor and the manufacturing method thereof |
| 08/18/1992 | US5140392 High voltage mos transistor and production method thereof, and semiconductor device having high voltage mos transistor and production method thereof |
| 08/18/1992 | US5140391 Thin film MOS transistor having pair of gate electrodes opposing across semiconductor layer |
| 08/18/1992 | US5140388 Vertical metal-oxide semiconductor devices |
| 08/18/1992 | US5140386 Good breakdown voltage levels at relatively high frequencies |
| 08/18/1992 | US5140383 Method for fabricating a buried Schottky logic array and apparatus produced thereby |
| 08/18/1992 | US5140299 Article comprising a high value resistor |
| 08/18/1992 | US5139970 Forming on a substrate polycrystalline film of diamond or boron nitride having pinholes which are filled with insulating material, thus forming electrode pattern |
| 08/18/1992 | US5139968 Method of producing a t-shaped gate electrode |
| 08/18/1992 | US5139966 Integrated circuits; forming channel stops, annealing for diffusion |
| 08/18/1992 | US5139962 MOS fabrication method with self-aligned gate |
| 08/18/1992 | US5139961 Reducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic base |
| 08/18/1992 | US5139960 Interstitital doping in III-V semiconductors to avoid or suppress DX center formation |
| 08/18/1992 | US5139904 Method of producing high resolution and reproducible patterns |
| 08/13/1992 | DE4203833A1 Acceleration sensors made in silicon semiconductor material - uses an aluminium metallisation layer to protect the suspended part of the device during singulating and assembly |
| 08/13/1992 | DE4203832A1 Semiconductor pressure sensor in plastic moulded package - can be made with a lower strain level due to thermal expansion coefficient mismatch by careful optimisation of some dimensions |
| 08/12/1992 | EP0498663A2 Method for producing a semi conductor device using sputtering |
| 08/12/1992 | EP0498642A1 A semiconductor memory device |
| 08/12/1992 | EP0498475A2 Method of manufacturing a semiconductor device |
| 08/12/1992 | EP0498148A2 TFT LCD display control system for displaying data upon detection of VRAM write access |
| 08/12/1992 | EP0498109A1 Method for manufacturing semiconductor device having a via hole |
| 08/12/1992 | EP0498101A1 Monolithic microwave IC oscillator |
| 08/12/1992 | EP0497980A1 Optical valve device |
| 08/12/1992 | EP0177544B1 Method of producing an isfet and same isfet |
| 08/11/1992 | US5138573 Non-volatile storage cell |
| 08/11/1992 | US5138418 Transistor structure for testing emitter-base junction |
| 08/11/1992 | US5138417 High-frequency semiconductor device |
| 08/11/1992 | US5138415 Photo-semiconductor device with a zero-cross function |
| 08/11/1992 | US5138414 Pressure sensitive semiconductor device with cantilevers |
| 08/11/1992 | US5138413 Piso electrostatic discharge protection device |
| 08/11/1992 | US5138410 Nonvolatile semiconductor memory device having tunnel insulating film structure |
| 08/11/1992 | US5138409 High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance |
| 08/11/1992 | US5138408 Resonant tunneling hot carrier transistor |
| 08/11/1992 | US5138407 Transistor made of 3-5 group semiconductor materials on a silicon substrate |
| 08/11/1992 | US5138405 Quasi one-dimensional electron gas field effect transistor |
| 08/11/1992 | US5138404 Double heterojunction of same conductivity type; high carrier density region; good ohmic contact; low operating voltage |
| 08/11/1992 | US5138403 High temperature Schottky barrier bypass diodes |
| 08/11/1992 | US5138401 Electronic devices utilizing superconducting materials |
| 08/11/1992 | US5138251 Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same |
| 08/11/1992 | US5138190 Charge pump circuit |
| 08/11/1992 | US5137841 Method of manufacturing a thin film transistor using positive and negative photoresists |
| 08/11/1992 | US5137840 Vertical bipolar transistor with recessed epitaxially grown intrinsic base region |
| 08/11/1992 | US5137839 Method of manufacturing a bipolar transistor having polysilicon layer which serves as an emitter electrode and passivating dangling bonds |
| 08/11/1992 | US5137838 Method of fabricating P-buried layers for PNP devices |
| 08/11/1992 | CA1306313C Method for manufacturing double-diffused metal-oxide semiconductor fieldeffect transistor device and the device thereby manufactured |
| 08/11/1992 | CA1306145C Thin-film transistor |
| 08/05/1992 | EP0497620A2 Micromechanical barb and method for making the same |
| 08/05/1992 | EP0497596A2 Method for fabricating integrated circuit structures |
| 08/05/1992 | EP0497592A2 Non single crystal semiconductor device and manufacturing method |
| 08/05/1992 | EP0497577A2 High breakdown voltage semiconductor device |
| 08/05/1992 | EP0497534A2 Piezoresistive pressure transducer with a conductive elastomeric seal |
| 08/05/1992 | EP0497471A2 A technique for improving ESD immunity |
| 08/05/1992 | EP0497427A2 Semiconductor device for high voltage application and method of making the same |
| 08/05/1992 | EP0497305A2 GsAs FET with resistive AlGaAs |
| 08/05/1992 | EP0497290A2 Switching semiconductor device and method of manufacturing the same |
| 08/05/1992 | EP0497216A2 SOI transistor with pocket implant |
| 08/05/1992 | EP0496890A1 Pressure sensor |
| 08/05/1992 | EP0496764A1 Ferro-electric non-volatile variable resistive element |
| 08/05/1992 | EP0173733B1 Capacitive device |
| 08/04/1992 | US5136541 Programmable read only memory using stacked-gate cell erasable by hole injection |
| 08/04/1992 | US5136540 Non-volatile semiconductor memory for volatiley and non-volatiley storing information and writing method thereof |
| 08/04/1992 | US5136362 Electrical contact with diffusion barrier |
| 08/04/1992 | US5136359 Anisotropic conductive film with through-holes filled with metallic material |