| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/16/1992 | EP0503605A2 Insulated gato type bipolar-transistor with overvoltage protection |
| 09/16/1992 | EP0503211A1 Semiconductor device comprising a layered structure grown on a structured substrate |
| 09/16/1992 | EP0503141A1 Device for improvements of characteristics of semiconductor devices with PN junctions |
| 09/16/1992 | EP0503131A1 MOS Gated bipolar transistor |
| 09/16/1992 | EP0503077A1 Semiconductor device |
| 09/16/1992 | CN1018310B Semiconductor device |
| 09/15/1992 | US5148395 Dual eeprom cell with current mirror differential read |
| 09/15/1992 | US5148267 Double heterostructure step recovery diode with internal drift field |
| 09/15/1992 | US5148259 Semiconductor device having thin film wiring layer of aluminum containing carbon |
| 09/15/1992 | US5148254 Finely controlled semiconductor device |
| 09/15/1992 | US5148253 Light-triggered switching circuit |
| 09/15/1992 | US5148252 Bipolar transistor |
| 09/15/1992 | US5148250 Bipolar transistor as protective element for integrated circuits |
| 09/15/1992 | US5148249 Semiconductor protection device |
| 09/15/1992 | US5148246 Cell array of a non-volatile semiconductor memory devices |
| 09/15/1992 | US5148245 Semiconductor device having a selectively doped heterostructure |
| 09/15/1992 | US5148242 Electron-wave coupled semiconductor switching device |
| 09/15/1992 | US5148241 Method of manufacturing a schottky diode device |
| 09/15/1992 | US5148240 High voltage, high speed schottky semiconductor device and method of fabrication |
| 09/15/1992 | US5147824 Semiconductor wafer |
| 09/15/1992 | US5147820 Silicide formation on polysilicon |
| 09/15/1992 | US5147818 Method for manufacturing a BiCMOS semiconductor device having a lateral bipolar transistor |
| 09/15/1992 | US5147817 Method for forming programmable resistive element |
| 09/15/1992 | US5147814 Method of manufacturing an lddfet having an inverted-t shaped gate electrode |
| 09/15/1992 | US5147811 Method of manufacturing semiconductor device by controlling the profile of the density of p-type impurities in the source/drain regions |
| 09/15/1992 | US5147810 Low power, high speed, transistor |
| 09/15/1992 | US5147809 Method of producing a bipolar transistor with a laterally graded emitter (LGE) employing a refill method of polycrystalline silicon |
| 09/15/1992 | US5147775 Method of fabricating a high-frequency bipolar transistor |
| 09/15/1992 | US5146787 Pressure microsensor |
| 09/12/1992 | CA2062153A1 Semiconductor device comprising a layered structure grown on a structured substrate |
| 09/10/1992 | DE4207187A1 Semiconductor switching device using insulated gate bipolar transistors - has delay stage for driver signal supplied to control electrode of one bipolar transistor |
| 09/09/1992 | EP0502749A2 Gate structure of field effect device and method for forming the same |
| 09/09/1992 | EP0502438A2 Non-volatile memory, semiconductor memory device having the non-volatile memory, and method of producing the semiconductor memory device |
| 09/09/1992 | EP0502306A2 Wafer-bonded semiconductor sensor |
| 09/09/1992 | EP0336951B1 Integrated circuit contact fabrication process |
| 09/09/1992 | CN1064366A Electrically erasable phase change memory |
| 09/08/1992 | US5146602 Method of increasing the accuracy of an analog neural network and the like |
| 09/08/1992 | US5146480 Sampling an analog signal voltage using fill and spill input in charge transfer device |
| 09/08/1992 | US5146426 Electrically erasable and programmable read only memory with trench structure |
| 09/08/1992 | US5146389 Differential capacitor structure and method |
| 09/08/1992 | US5146305 Asymmetric gate turn off thyristor with anode short-circuits and reduced turn on current |
| 09/08/1992 | US5146302 Charge skimming solid-state imaging device including sampling circuits |
| 09/08/1992 | US5146301 Terminal electrode structure of a liquid crystal panel display |
| 09/08/1992 | US5146298 Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor |
| 09/08/1992 | US5146297 Precision voltage reference with lattice damage |
| 09/08/1992 | US5146291 MIS device having lightly doped drain structure |
| 09/08/1992 | US5146120 Low-noise output buffer circuit |
| 09/08/1992 | US5146118 Bi-cmos logic gate circuits for low-voltage semiconductor integrated circuits |
| 09/08/1992 | US5146040 Process for separating dimethylnaphthalene isomers with zeolite L agglomerates |
| 09/08/1992 | US5145810 Forming recesses and a reinforcement layer; polishing and making resistance element; automobiles |
| 09/08/1992 | US5145798 Method of fabricating an insulated gate field effect transistor having lightly-doped source and drain extensions using an oxide sidewall spacer method |
| 09/08/1992 | US5145797 Doping |
| 09/08/1992 | US5145796 Method for manufacturing a semiconductor apparatus |
| 09/08/1992 | CA1307358C Ohmic electrode |
| 09/08/1992 | CA1307357C Graft base bipolar transistor |
| 09/08/1992 | CA1307354C Process for fabricating self-aligned high performance lateral action silicon-controlled rectifier and static random access memory cells |
| 09/03/1992 | WO1992015113A1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof |
| 09/03/1992 | DE4143115A1 Inverted-T gate MOSFET - uses separate deposition of thin poly:silicon@ layer for gate electrode overlying the lightly doped diffused regions for higher reliability |
| 09/02/1992 | EP0501941A1 Transistor structure for use in erasable and programmable semiconductor memory devices |
| 09/02/1992 | EP0501896A2 Improved collector for a bipolar transistor compatible with MOS technology |
| 09/02/1992 | EP0501686A1 Fabrication of aluminium-containing semiconductor devices by metal-organic molecular-beam-epitaxy |
| 09/02/1992 | EP0501684A2 Fabrication of GaAs devices with doped regions and devices so produced |
| 09/02/1992 | EP0501561A1 Method of manufacturing a semiconductor device whereby a self-aligned cobalt or nickel silicide is formed |
| 09/02/1992 | EP0501359A2 Semiconductor sensor of electrostatic capacitance type |
| 09/02/1992 | EP0501342A2 Insulated gate bipolar transistor and method of producing same |
| 09/02/1992 | EP0501279A1 Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same |
| 09/02/1992 | EP0501275A2 Method of making symmetrical and asymmetrical MESFETs |
| 09/02/1992 | EP0501261A1 Lateral bipolar transistor |
| 09/02/1992 | EP0501246A2 Opto-electronic switch device |
| 09/02/1992 | EP0500945A1 Pressure sensor |
| 09/02/1992 | CN1018114B Superconductive device |
| 09/02/1992 | CN1018112B Semiconductor device and its manufacturing method |
| 09/01/1992 | US5144580 Quantum wire CCD charge pump |
| 09/01/1992 | US5144518 Semiconductor integrated circuit |
| 09/01/1992 | US5144514 Transistor device drive circuit |
| 09/01/1992 | US5144410 Ohmic contact for III-V semiconductor devices |
| 09/01/1992 | US5144409 Isotopically enriched semiconductor devices |
| 09/01/1992 | US5144408 Semiconductor integrated circuit device and method of manufacturing the same |
| 09/01/1992 | US5144406 Diode devices and active matrix addressed display devices incorporating them |
| 09/01/1992 | US5144403 Bipolar transistor with trench-isolated emitter |
| 09/01/1992 | US5144402 Semiconductor switching device and method of controlling a carrier life time in a semiconductor switching device |
| 09/01/1992 | US5144401 Turn-on/off driving technique for insulated gate thyristor |
| 09/01/1992 | US5144400 Power semiconductor device with switch-off facility |
| 09/01/1992 | US5144398 Semiconductor device and photoelectric conversion apparatus using the same |
| 09/01/1992 | US5144394 Semiconductor device and method for fabricating same |
| 09/01/1992 | US5144393 Structure for a PSD type field effect transistor |
| 09/01/1992 | US5144392 Thin-film transistor circuit |
| 09/01/1992 | US5144391 Semiconductor device which relieves internal stress and prevents cracking |
| 09/01/1992 | US5144390 Silicon-on insulator transistor with internal body node to source node connection |
| 09/01/1992 | US5144389 Insulated gate field effect transistor with high breakdown voltage |
| 09/01/1992 | US5144388 Semiconductor device having a plurality of fets formed in an element area |
| 09/01/1992 | US5144380 Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate |
| 09/01/1992 | US5144379 Buffer layer, barrier layer of a different Group 3-5 semiconductor, Group 3-5 semiconductor active layer, active device |
| 09/01/1992 | US5144378 Semiconductor: substrate; channel layer of undoped first Group 3-5 semiconductor with indium arsenide; electron gas in channel layer; electron supplying layer of n-doped second Group 3-5 semiconductor; source, drain, gate electrodes |
| 09/01/1992 | US5144376 Compound semiconductor device |
| 09/01/1992 | US5143860 High density EPROM fabricaiton method having sidewall floating gates |
| 09/01/1992 | US5143859 Method of manufacturing a static induction type switching device |
| 09/01/1992 | US5143856 Field effect transistors with gallium arsenide epitaxial layer on a substrate |
| 09/01/1992 | CA1307062C Process and structure for thin film transistor matrix addressed liquid crystal displays |
| 09/01/1992 | CA1307055C2 Semiconductor interconnection structure |