| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 10/07/1992 | EP0346464B1 Silicon carbide:metal carbide alloy semiconductor |
| 10/07/1992 | EP0270562B1 Fabrication of mos-transistors |
| 10/07/1992 | EP0240567B1 Semiconductor device |
| 10/07/1992 | CN2118356U Gage pole structure for didirectional crystal shutter tube |
| 10/07/1992 | CN1065159A Sodium lamp electronic trigger and bidirectional diode thyristor |
| 10/06/1992 | US5153890 Semiconductor device comprising a layered structure grown on a structured substrate |
| 10/06/1992 | US5153813 High area capacitor formation using dry etching |
| 10/06/1992 | US5153703 Semiconductor device |
| 10/06/1992 | US5153702 Thin film semiconductor device and method for fabricating the same |
| 10/06/1992 | US5153701 Semiconductor device with low defect density oxide |
| 10/06/1992 | US5153700 Crystal-etched matching faces on semiconductor chip and supporting semiconductor substrate |
| 10/06/1992 | US5153696 MOS FET with current sensing terminal |
| 10/06/1992 | US5153695 Semiconductor gate-controlled high-power capability bipolar device |
| 10/06/1992 | US5153694 Decreased sheet resistance, phosphorus doping |
| 10/06/1992 | US5153693 Circuit including bistable, bipolar transistor |
| 10/06/1992 | US5153692 Semiconductor device |
| 10/06/1992 | US5153691 Apparatus for a dual thickness floating gate memory cell |
| 10/06/1992 | US5153690 Thin-film device |
| 10/06/1992 | US5153688 Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied |
| 10/06/1992 | US5153683 Field effect transistor |
| 10/06/1992 | US5153682 Semiconductors with barrier layer interposed between active and carrier layers; increased trans-conductance and high frequency |
| 10/06/1992 | US5153681 Electrcally plastic device and its control method |
| 10/06/1992 | US5153453 High voltage majority carrier rectifier |
| 10/06/1992 | US5153146 Doping boron into substrate via silicon oxide layer to form p-type impurities |
| 10/06/1992 | US5153145 Fet with gate spacer |
| 10/06/1992 | US5153144 High dose ion implantment to form source and gate region; oxidation treatment |
| 10/06/1992 | US5153142 Method for fabricating an indium tin oxide electrode for a thin film transistor |
| 10/06/1992 | CA1308496C Deposition of tungsten on silicon in a non-self-limiting cvd process |
| 10/06/1992 | CA1308495C Thin film field effect transistor |
| 10/06/1992 | CA1308471C Image display device |
| 10/01/1992 | WO1992016976A1 Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| 10/01/1992 | WO1992016971A1 Semiconductor device |
| 10/01/1992 | WO1992016967A1 Shallow ohmic contacts to n-gaas and method of making same |
| 10/01/1992 | DE4210402A1 Diamant-schottky-diode Diamond Schottky diode |
| 09/30/1992 | EP0506528A1 Matrix driving structure for display screen |
| 09/30/1992 | EP0506453A1 A quantum wire structure and a method for producing the same |
| 09/30/1992 | EP0506450A2 A Schottky barrier diode and a method of manufacturing thereof |
| 09/30/1992 | EP0506427A1 An integrated gate field-effect transistor with gate-drain overlap and method of making the same |
| 09/30/1992 | EP0506287A1 Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology |
| 09/30/1992 | EP0506188A1 Charge-coupled device |
| 09/30/1992 | EP0506170A1 Integrated structure of bipolar power device with high current density and fast diode and related manufacturing process |
| 09/30/1992 | EP0506118A1 Light triggered and quenched static induction thyristor circuit |
| 09/30/1992 | EP0506117A2 Thin-film transistor |
| 09/30/1992 | EP0506097A2 Method of manufacturing a semiconductor device having a layer with a controlled thickness |
| 09/30/1992 | EP0506089A2 Static random access type semiconductor memory device |
| 09/30/1992 | EP0506027A2 Electro-optical device and method for driving the same |
| 09/30/1992 | EP0505790A2 Artificial ionic synapse |
| 09/30/1992 | EP0505456A1 Scr structure for fast turn-on switching |
| 09/30/1992 | EP0232361B1 High-performance dram arrays including trench capacitors |
| 09/29/1992 | US5151767 Power integrated circuit having reverse-voltage protection |
| 09/29/1992 | US5151766 Semiconductor component |
| 09/29/1992 | US5151765 Semiconductor device comprising high-speed and high-current transistors formed in a common substrate and having matched characteristics |
| 09/29/1992 | US5151763 Acceleration and vibration sensor and method of making the same |
| 09/29/1992 | US5151762 Semiconductor device, fabricating method thereof and flash control device using the semiconductor device |
| 09/29/1992 | US5151761 Nonvolatile semiconductor memory device with isolated gate electrodes |
| 09/29/1992 | US5151760 Integrated circuit with improved capacitive coupling |
| 09/29/1992 | US5151759 Fermi threshold silicon-on-insulator field effect transistor |
| 09/29/1992 | US5151758 Planar-doped valley field effect transistor (PDVFET) |
| 09/29/1992 | US5151757 Heterojunction field-effect transistor |
| 09/29/1992 | US5151618 Logic circuit |
| 09/29/1992 | US5151382 Method of manufacturing a semiconductor device by maskless pn junction isolation means |
| 09/29/1992 | US5151374 Semiconductirs |
| 09/29/1992 | CA1307939C Method of adjusting bridge circuit of semiconductor |
| 09/24/1992 | DE4108818A1 Geometric arrangement for single gate multi-source and drain FET - comprises central insulated gate surrounded by concentric ring of individually isolated source and drain regions |
| 09/23/1992 | EP0505227A2 Method for making resist patterns for large area circuit base |
| 09/23/1992 | EP0505191A1 Semiconductor device with low concentration n region to improve dV/dt capability |
| 09/23/1992 | EP0505176A1 Breakover diode |
| 09/23/1992 | EP0505130A2 Thinned charge-coupled devices and method for making the same |
| 09/23/1992 | EP0505093A2 Article comprising a lattice-mismatched semiconductor heterostructure |
| 09/23/1992 | EP0505081A1 Integrated circuit having a charge coupled device and method for manufacturing thereof |
| 09/23/1992 | EP0504992A2 A lateral insulated gate field effect semiconductor device |
| 09/23/1992 | EP0504987A2 Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer |
| 09/23/1992 | EP0504946A1 Vertical metal-oxide semiconductor device |
| 09/23/1992 | EP0504925A2 Multilayer base heterojunction device |
| 09/23/1992 | EP0504875A2 Bipolar transistor and method of fabricating the same |
| 09/23/1992 | EP0504852A1 Charge transfer device |
| 09/23/1992 | EP0504714A2 Semiconductor substrate having a SOI structure and method of producing the same |
| 09/23/1992 | EP0504669A1 Semiconductor device comprising a substrate |
| 09/23/1992 | EP0504425A1 Semiconductor device |
| 09/23/1992 | EP0504390A1 Thin film transistor stucture with improved source/drain contacts. |
| 09/23/1992 | EP0504170A1 Method of making silicon quantum wires. |
| 09/23/1992 | CN1064766A Method for making transistor by silicon single crystal thin section |
| 09/22/1992 | US5150276 Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings |
| 09/22/1992 | US5150240 Thin film active matrix circuit |
| 09/22/1992 | US5150233 Multilayer electrode; indium, tin oxide, molybdenum (or alloy there of)and aluminum (or alloy thereof) |
| 09/22/1992 | US5150191 P-type II-VI compound semiconductor doped |
| 09/22/1992 | US5150185 Semiconductor device |
| 09/22/1992 | US5150181 Amorphous thin film semiconductor device with active and inactive layers |
| 09/22/1992 | US5150179 Diffusionless source/drain conductor electrically-erasable, electrically-programmable read-only memory and method for making and using the same |
| 09/22/1992 | US5150178 Gate structure for a semiconductor memory device |
| 09/22/1992 | US5150177 Schottky diode structure with localized diode well |
| 09/22/1992 | US5150176 PN junction surge suppressor structure with moat |
| 09/22/1992 | US5149676 Etching cavities in silicon surface to roughen it, charge storage electrodes |
| 09/22/1992 | US5149666 Method of manufacturing a semiconductor memory device having a floating gate electrode composed of 2-10 silicon grains |
| 09/22/1992 | US5149664 Self-aligning ion-implantation method for semiconductor device having multi-gate type MOS transistor structure |
| 09/21/1992 | CA2063220A1 Bipolar transistor and method of fabricating the same |
| 09/17/1992 | WO1992016020A1 Non-volatile semiconductor memory cell having gate electrode on sidewall of gate electrode part |
| 09/17/1992 | DE4207913A1 MOSFET with improved properties - has 1st conductivity substrate, convex channel region, gate on channel region and 2nd conductivity source and drain regions |
| 09/16/1992 | EP0503815A2 Method for forming a gate oxide film |
| 09/16/1992 | EP0503731A1 Method of making a transistor with high electron mobility |