Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/1992
10/28/1992EP0510705A2 Field effect transistor
10/28/1992EP0510667A1 Semiconductor device having an improved insulated gate transistor
10/28/1992EP0510607A1 Semiconductor memory device
10/28/1992EP0510557A2 Resonant tunneling transistor
10/28/1992EP0510380A2 A thin film field effect device having an LDD structure and a method of manufacturing such a device
10/28/1992EP0510374A1 Method for fabrication of semiconductor device utilizing ion implantation
10/28/1992EP0510368A1 Method for fabricating thin film transistors and thin film transistor produced by said method
10/28/1992EP0510349A1 Method of manufacturing a MOS-transistor
10/28/1992EP0510282A2 Shunt regulator with tunnel oxide reference
10/28/1992EP0510198A1 Method of manufacturing semiconductor device
10/28/1992EP0328594B1 Schottky diode
10/27/1992US5159570 Four memory state EEPROM
10/27/1992US5159477 Active matrix display device having additional capacitors connected to switching elements and additional capacitor common line
10/27/1992US5159431 Nonvolatile semiconductor device with a trench isolator
10/27/1992US5159427 Semiconductor substrate structure for use in power ic device
10/27/1992US5159423 Self-aligned, planar heterojunction bipolar transistor
10/27/1992US5159421 Double channel heterostructures
10/27/1992US5159417 Semiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereof
10/27/1992US5159416 Thin-film-transistor having schottky barrier
10/27/1992US5159414 Junction field effect transistor of a compound semiconductor
10/27/1992US5159296 Four port monolithic gaas pin diode switch
10/27/1992US5159260 Reference voltage generator device
10/27/1992US5159208 Interface circuit provided between a compound semiconductor logic circuit and a bipolar transistor circuit
10/27/1992US5159207 Circuit for dynamic isolation of integrated circuits
10/27/1992US5158909 Barrier metal electrode overcoated with thin film of electrical resistant material
10/27/1992US5158907 Method for making semiconductor devices with low dislocation defects
10/27/1992US5158904 High resolution masking pattern on semiconductor; doping under gate electrode to form channels
10/27/1992US5158903 Method for producing a field-effect type semiconductor device
10/27/1992US5158902 Floating gate and gate of logic circuit on single substrate
10/27/1992US5158901 Field effect transistor having control and current electrodes positioned at a planar elevated surface and method of formation
10/27/1992US5158899 Method of manufacturing input circuit of semiconductor device
10/27/1992US5158898 Self-aligned under-gated thin film transistor and method of formation
10/27/1992US5158897 Method for the production of a semiconductor device by implanting fluorocarbon ions
10/27/1992CA2067048A1 Field effect transistor
10/27/1992CA2067046A1 Oscillating circuit device
10/22/1992DE4212511A1 Blind gate horizontally constructed charge coupled device - has earth or potential-connected blind gates between two-phase gate structures and N-plus final gate layer
10/22/1992DE4212494A1 Producing isolated semiconductor sidewall for MOS transistor - using selective isotropic and anisotropic plasma etching of polycrystalline silicon@ and silicon@ isolating layers
10/22/1992DE4203814A1 Divided drain horizontally constructed charge coupled device - has N-plus heat diffusion region with divided drain controlled by reset-gate spanning both drain sections
10/22/1992DE4128211A1 Halbleitervorrichtung und verfahren zur herstellung derselben A semiconductor device and method of producing same
10/21/1992EP0509698A2 Contactless EPROM array
10/21/1992EP0509697A2 Stacked etch fabrication of cross-point EPROM arrays
10/21/1992EP0509696A2 Contactless flash EPROM cell using a standard row decoder
10/21/1992EP0509378A2 A method for fabricating an EPROM cell
10/21/1992EP0509363A2 Free-wheel transistor device and use thereof
10/21/1992EP0509183A1 Monolithic semiconductor device comprising an integrated control circuit and at least one power transistor integrated in the same chip and the associated manufacturing process
10/21/1992CN1018779B Bipolar and cmos transistor
10/20/1992US5157472 Semiconductor acceleration sensor
10/20/1992US5157471 Semiconductor non-volatile memory device
10/20/1992US5157469 Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators
10/20/1992US5157467 Quantum interference device and method for processing electron waves utilizing real space transfer
10/20/1992US5157357 Monolithic microwave ic oscillator
10/20/1992US5157003 One step resist coating and prebaking process
10/20/1992US5156995 Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
10/20/1992US5156991 Fabricating an electrically-erasable, electrically-programmable read-only memory having a tunnel window insulator and thick oxide isolation between wordlines
10/20/1992US5156990 Floating-gate memory cell with tailored doping profile
10/20/1992US5156989 Using both rapid and slow diffusing dopants in selected areas
10/20/1992US5156987 High performance thin film transistor (TFT) by solid phase epitaxial regrowth
10/20/1992US5156986 Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
10/20/1992US5156985 Method for making a charge transfer semiconductor device having an oblong trench
10/20/1992US5156984 Forming bipolar and complementary metal oxide semiconductor elements simultaneously on same substrate
10/20/1992US5156981 Method of making a semiconductor device of a high withstand voltage
10/20/1992CA1309191C Bipolar transistor and manufacturing method thereof
10/18/1992WO1992019017A1 Semiconductor device, light-emitting diode and transistor structure making use of resonant tunneling
10/18/1992CA2085361A1 Semiconductor device, light-emitting diode and transistor structure making use of resonant tunneling
10/15/1992WO1992017908A1 Field effect transistor
10/15/1992WO1992017907A1 Thyristor with adjustable breakover voltage, and a process for manufacturing it
10/15/1992WO1992017906A2 Graded collector for inductive loads
10/15/1992DE4211999A1 Reducing hot electron current density of submicron integrated circuits - using surface doping or lightly doped source-drain region in regions under spacer oxide, of the opposite impurity type
10/14/1992EP0508618A2 Method of making ohmic contact to a III-V semiconductor device
10/14/1992EP0508128A2 Four port monolithic GaAs PIN diode switch
10/14/1992EP0507974A1 MOS-gated turn-off power semiconductor device
10/14/1992EP0344290B1 Vacuum apparatus
10/13/1992US5155658 Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
10/13/1992US5155657 High area capacitor formation using material dependent etching
10/13/1992US5155574 Semiconductor device
10/13/1992US5155573 Ferroelectric capacitor and a semiconductor device having the same
10/13/1992US5155572 Vertical isolated-collector PNP transistor structure
10/13/1992US5155571 Having enhanced and equalized current carrier mobility
10/13/1992US5155569 Thyristor device with improved turn-off characteristics
10/13/1992US5155568 High-voltage semiconductor device
10/13/1992US5155564 Thin-film transistor array
10/13/1992US5155563 Semiconductor device having low source inductance
10/13/1992US5155562 Semiconductor device equipped with a conductivity modulation misfet
10/13/1992US5155561 Permeable base transistor having an electrode configuration for heat dissipation
10/13/1992US5155559 High temperature refractory silicide rectifying contact
10/13/1992US5155379 Clocked driver circuit stabilized against changes due to fluctuations in r.c. time constant
10/13/1992US5155369 Multiple angle implants for shallow implant
10/13/1992US5155059 Method of manufacturing dynamic RAM
10/13/1992US5155055 Manufacturing an array of rows and columns of nonvolatile memory cells at facing of semiconductor layer
10/13/1992US5155054 Masking semiconductor with layer having hole, forming a semiconductor layer based in the hole and extending outward, etching mask away, forming a gate insulating layer and electrode on exposed surface and doping
10/13/1992US5155053 Forming two layers on a substrate with an opening through the second layer, etching the first material through the opening removing the second layer, depositing electroconductive material into cavity and removing second material
10/13/1992CA1308818C Unpinned oxide-compound semiconductor structures and method of forming same
10/10/1992WO1992018980A1 A single transistor non-volatile electrically alterable semiconductor memory device
10/07/1992EP0507582A1 Semiconductor sensor
10/07/1992EP0507567A2 Field effect transistor structure and method of fabrication
10/07/1992EP0507454A1 Heterojunction bipolar transistor and method of manufacturing the same
10/07/1992EP0507434A2 Method of making semiconductor devices
10/07/1992EP0507077A2 Semiconductor integrated circuit with a plurality of gate electrodes
10/07/1992EP0506980A1 Structure of semiconductor device and manufacturing method thereof
10/07/1992EP0506969A1 Semiconductor device
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