H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof

Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/1992
11/24/1992	CA1310763C Integrated circuit containing bi-polar and complementary mos transistors on a common substrate and method for the manufacture thereof
11/19/1992	EP0514297A2 Process for making a contact to a semiconductor device
11/19/1992	EP0514100A2 Fabrication of semiconductor devices in compound semiconductor layers
11/19/1992	EP0514079A2 High electron mobility transistor and method of manufacture
11/19/1992	EP0514060A2 DMOS transistor structure & method
11/19/1992	EP0513923A2 Protected programmable transistor with reduced parasitic capacitances and method of fabrication
11/19/1992	EP0513905A1 Semiconductor device and method of manufacturing such a device
11/19/1992	EP0513894A2 Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
11/19/1992	EP0513815A1 Semiconductor stress sensor
11/19/1992	EP0513764A2 Semiconductor device and method of increasing device breakdown voltage of semiconductor device
11/19/1992	EP0513684A2 Method of improving the manufaturing of SOI devices by forming position alignment marks
11/19/1992	EP0513666A1 CCD shift register
11/19/1992	EP0513644A2 Field effect thin film transistor and method of manufacturing the same
11/19/1992	EP0513639A2 Semiconductor field effect transistor device and fabrication thereof
11/19/1992	EP0513590A2 Thin-film transistor and method for manufacturing it
11/19/1992	EP0513261A1 Thin film transistor having an improved gate structure and gate coverage by the gate dielectric
11/19/1992	EP0513185A1 Mosfet structure having reduced gate capacitance and method of forming same.
11/19/1992	DE4212829A1 Mfg. metal-oxide semiconductor MOSFET - depositing insulating film on substrate of first conductivity type and etching both film part and substrate to preset thickness
11/19/1992	DE4208537A1 MOSFET structure with gate oxide film - has gate on substrate of first conductivity type and ion implantation layer under gate
11/19/1992	DE4143346A1 Integrated power semiconductor switch - has buried oxide layer insulating lateral MOSFET source from substrate and epitaxial layer
11/19/1992	DE4114660A1 Passivation layer semiconductor element mfr. - has channels of defined width and depth filled with glass paste to provide glass passivation layer
11/17/1992	US5165075 Electro-optic device having pairs of complementary transistors
11/17/1992	US5165066 Contact chain structure for troubleshooting eprom memory circuits
11/17/1992	US5164815 Integrated circuit device and method to prevent cracking during surface mount
11/17/1992	US5164813 New diode structure
11/17/1992	US5164807 Charge-coupled devices with locally widened electrodes
11/17/1992	US5164804 Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same
11/17/1992	US5164803 Cmos semiconductor device with an element isolating field shield
11/17/1992	US5164802 Power vdmosfet with schottky on lightly doped drain of lateral driver fet
11/17/1992	US5164801 A p channel mis type semiconductor device
11/17/1992	US5164800 Semiconductor device
11/17/1992	US5164797 Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
11/17/1992	US5164335 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
11/17/1992	US5164333 Silicide diffusion barrier
11/17/1992	US5164327 Method of manufacturing a mis-type semiconductor
11/17/1992	US5164325 Method of making a vertical current flow field effect transistor
11/17/1992	US5164218 Semiconductor device and a method for producing the same
11/17/1992	CA1310433C Non-rectifying contacts to iii-v semiconductors
11/17/1992	CA1310296C P and n-type microcrystalline semiconductor alloy material including band gap widening elements devices utilizing same
11/16/1992	CA2234517A1 Blue-green lase diode
11/12/1992	WO1992020102A1 Oxides and nitrides of metastabile groupe iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
11/12/1992	DE4215010A1 High density integrated MOS circuit with reduced narrow channel effect - uses vertical channel structure with epitaxial silicon or pattern etched into the substrate with circular or elliptical walls
11/12/1992	DE4212861A1 FET contg. potential barriers - has source-drain regions on substrate, gate electrode on insulation layer, channel region between substrate, source-drain and semiconductor layers
11/11/1992	EP0512878A1 Photosensitive device with read registers placed side by side
11/11/1992	EP0512840A2 An active matrix display device
11/11/1992	EP0512717A2 Threshold switching device with negative differential resistance
11/11/1992	EP0512605A1 Power device having reverse-voltage protection
11/10/1992	US5163178 Semiconductor device having enhanced impurity concentration profile
11/10/1992	US5162966 Semiconductor device having a surge protecting element
11/10/1992	US5162892 Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
11/10/1992	US5162890 Stacked capacitor with sidewall insulation
11/10/1992	US5162888 High DC breakdown voltage field effect transistor and integrated circuit
11/10/1992	US5162884 Insulated gate field-effect transistor with gate-drain overlap and method of making the same
11/10/1992	US5162883 Increased voltage MOS semiconductor device
11/10/1992	US5162882 Semiconductor over insulator mesa
11/10/1992	US5162880 Nonvolatile memory cell having gate insulation film with carrier traps therein
11/10/1992	US5162879 Diffusionless conductor/oxide semiconductor field effect transistor and methods for making and using the same
11/10/1992	US5162876 Semiconductor device having high breakdown voltage
11/10/1992	US5162875 Protective layer for electroactive passivation layers
11/10/1992	US5162263 Metal silicide layer
11/10/1992	US5162262 Multilayer, silicides, nitrides
11/10/1992	US5162255 Chemical vapor deposition of silicon carbide layer on silicon dioxide, protective coating
11/10/1992	US5162254 Semiconductor device having a SOI substrate and fabrication method thereof
11/10/1992	US5162251 Method for making thinned charge-coupled devices
11/10/1992	US5162247 Process for trench-isolated self-aligned split-gate EEPROM transistor and memory array
11/10/1992	US5162245 Self-aligned bipolar transistor using selective polysilicon growth
11/10/1992	US5162244 Bipolar transistor and manufacturing method thereof
11/10/1992	US5162243 Method of producing high reliability heterojunction bipolar transistors
11/10/1992	US5162239 Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
11/10/1992	CA1310078C Voltage controlled variable capacitor
11/10/1992	CA1310060C Electrostatic discharge protection network for large area transducer arrays
11/09/1992	CA2068020A1 Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
11/04/1992	EP0511864A2 Epitaxially grown compound semiconductor crystals with buffer layers
11/04/1992	EP0511837A2 Method of producing stepped wall interconnects and gates
11/04/1992	EP0511628A2 Insulator for integrated circuits formed by high-pressure oxidation
11/04/1992	EP0511627A2 P-N junction diffusion barrier employing mixed dopants
11/04/1992	EP0511370A1 Method of making an MOS EEPROM floating gate transistor cell
11/03/1992	US5161235 Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold
11/03/1992	US5161113 CCD output signal processing method and apparatus
11/03/1992	US5160994 Heterojunction bipolar transistor with improved base layer
11/03/1992	US5160990 MIS-FET with small chip area and high strength against static electricity
11/03/1992	US5160989 Extended body contact for semiconductor over insulator transistor
11/03/1992	US5160986 Matrix of EPROM memory cells with a tablecloth structure having an improved capacitative ratio and a process for its manufacture
11/03/1992	US5160985 Insulated gate bipolar transistor
11/03/1992	US5160982 Enhanced mobility semiconductor
11/03/1992	US5160856 Reference voltage regulator semiconductor integrated circuit
11/03/1992	US5160793 Shallow ohmic contacts to n-Alx Ga1-x As
11/03/1992	US5160491 Metal oxide semiconductor, miniaturization
11/03/1992	CA2067413A1 Threshold switching device
11/03/1992	CA1309781C Compact cmos analog crosspoint switch matrix
10/1992
10/30/1992	CA2061120A1 Mask within a concave semiconductor structure
10/29/1992	WO1992018895A1 Data line defect remedying structure
10/29/1992	DE4213606A1 Transistor with current detection property - has main transistor region on substrate also carrying separately arranged measurement regions with common base and collector connections and separate emitter regions
10/29/1992	DE4211970A1 Hetero-epitaxial structure including buffer layer - for adjusting or eliminating residual stress in epitaxial layer
10/29/1992	DE4113756A1 Field effect-controllable semiconductor device - has insulation layer to prevent switch-on of bipolar structure
10/28/1992	EP0511096A1 Process for local passivation of a substrate, by an hydrogenated amorphous carbon layer, and method for fabricating thin film transistors on this passivated substrate
10/28/1992	EP0510966A2 MOS semiconductor device and fabrication method of the same
10/28/1992	EP0510858A1 Method of selectively forming a TiNx layer by MOCVD, on a semi-conductor device
10/28/1992	EP0510755A1 Display device
10/28/1992	EP0510710A1 Oscillating circuit device and its manufacturing method.

1 ... 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 ... 2182