Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1992
12/15/1992US5171703 Device and substrate orientation for defect reduction and transistor length and width increase
12/15/1992US5171700 Field effect transistor structure and method
12/15/1992US5171699 Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
12/15/1992US5171698 Forming polycrystalline silicon; then silicon oxide, silicon nitride; preferential etching
12/15/1992US5171697 Method of forming multiple layer collector structure for bipolar transistors
12/15/1992US5171696 Bipolar transistor
12/10/1992WO1992022094A1 SHALLOW OHMIC CONTACTS TO n-AlxGa1-xAs
12/10/1992DE4218324A1 Semiconductor extension sensor, e.g. for operating airbag system in motor vehicle - contains transfer system passing mechanical stress, e.g. caused by acceleration, to stress detection element
12/10/1992DE4211247A1 Semiconductor wafer with membrane pressure sensor elements - has semiconducting substrate with through-holes and bonded socket with sets of holes corresp. to sensor elements and substrate holes
12/09/1992EP0517647A2 Quantum semiconductor device that uses a quantum point contact for producing a quantum mechanical carrier wave with directivity
12/09/1992EP0517623A2 Transistor with a predetermined current gain in a bipolar integrated circuit
12/09/1992EP0517607A1 Method of fabrication of a non-volatile memory cell and memory cell fabricated with this method
12/09/1992EP0517443A2 GaAs mesfets with enhanced schottky barrier
12/09/1992EP0517438A2 Bipolar fabrication method
12/09/1992EP0517353A2 Non-volatile memory
12/09/1992EP0517164A1 Solid-state image sensor
12/09/1992EP0516847A1 Semiconductor device
12/09/1992CN1066936A Blue-green laser diode
12/08/1992US5170242 One or more active ionic species implanted at interface region
12/08/1992US5170241 Field effect transistor
12/08/1992US5170239 Insulated gate bipolar transistor having high short-circuit SOA and high latch-up current
12/08/1992US5170235 Semiconductor integrated circuit
12/08/1992US5170233 Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor
12/08/1992US5170232 MOS field-effect transistor with sidewall spacers
12/08/1992US5170231 First contact between channel formation layer and drain region exhibits different electric characteristics from second contact between channel and source region; Schottky junction
12/08/1992US5170230 Doped gallium arsenic antimonide carrier supply layer on intrinsic indium gallium arsenide channel layer; lattice matched to indium phosphide substrate; high electron mobility transistor
12/08/1992US5170229 Junction field effect transistors with injector region
12/08/1992US5170226 Fabrication of quantum devices in compound semiconductor layers and resulting structures
12/08/1992US5169804 Method for fastening a semiconductor, body provided with at least one semiconductor component to a substrate
12/08/1992US5169803 Method of filling contact holes of a semiconductor device
12/08/1992US5169795 Method of manufacturing step cut type insulated gate SIT having low-resistance electrode
12/08/1992US5169793 Method of making an insulated gate bipolar transistor having gate shield region
12/08/1992US5169792 Memory and logic elements on same substrate; concentration of field inversion preventive layers differ
12/08/1992US5169472 Forming micromechanical pressure sensor: polishing, cleaning, dipping in nitric acid at room temperature, sealing wafers under vacuum, heat treating at low temperature
12/03/1992DE4127795A1 Herstellungsverfahren und aufbau eines mos-transistors Production method and structure of a MOS transistor
12/02/1992EP0516516A1 Memory with capacitive EEPROM cell and process for reading such a memory cell
12/02/1992EP0516408A2 Method of forming T-gate structure on microelectronic device substrate
12/02/1992EP0516338A2 Self aligned polysilicon gate contact
12/02/1992EP0516335A2 Fabrication method in vertical transistor integration
12/02/1992EP0516146A1 Semiconductor integrated circuit having improved protection element
12/02/1992EP0516142A2 Photo-stimulated etching of CaF2
12/02/1992EP0516043A2 Dry etching method
12/02/1992EP0516031A1 Stacked ferroelectric memory cell and method
12/02/1992EP0515859A1 Low defect density/arbitrary lattice constant hetero-epitaxial layers
12/02/1992EP0515850A2 Lateral collector heterojunction bipolar transistor
12/02/1992EP0515840A2 Double heterostructure step recovery diode
12/02/1992EP0515833A1 Semiconductor integrated circuit device having wells biased with different voltage levels
12/02/1992EP0515824A2 Capacitor element
12/02/1992EP0515815A2 Semi-conductor device with PN junction and electrode arrangement
12/01/1992US5168465 Highly compact EPROM and flash EEPROM devices
12/01/1992US5168341 Bipolar-cmos integrated circuit having a structure suitable for high integration
12/01/1992US5168340 Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode
12/01/1992US5168337 Polycrystalline diode and a method for making the same
12/01/1992US5168336 Dynamic random access memory device with trench type memory cell
12/01/1992US5168335 Electrically programmable, electrically erasable memory array cell with field plate
12/01/1992US5168334 Non-volatile semiconductor memory
12/01/1992US5168333 Conductivity-modulation metal oxide semiconductor field effect transistor
12/01/1992US5168332 Semiconductor device having salicide structure, method of manufacturing the same, and heating apparatus
12/01/1992US5168331 Power metal-oxide-semiconductor field effect transistor
12/01/1992US5168330 Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
12/01/1992US5168329 Microwave semiconductor device capable of controlling a threshold voltage
12/01/1992US5168328 Heterojunction impatt diode
12/01/1992US5168175 Semiconductor integrated circuit using junction field effect transistor as current control element
12/01/1992US5168072 Method of fabricating an high-performance insulated-gate field-effect transistor
12/01/1992US5168071 Method of making semiconductor devices
12/01/1992US5168070 Electronic component, especially a permeable base transistor
12/01/1992US5168069 Molecular beam deposition of group 3 and 5 fluexes on a substrate, heat treatment on non-stoichiometric film and forming conductors on the layer to produce a detector
12/01/1992US5167778 Electrochemical etching method
12/01/1992CA2062641A1 Capacitor element
12/01/1992CA2062134A1 Low defect densiry/arbitrary lattice constant heteroepitaxial layers
12/01/1992CA1311053C Nonvolatile memory element
11/1992
11/26/1992WO1992021170A2 Blue-green laser diode
11/26/1992WO1992021151A2 HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT
11/25/1992EP0515148A2 Field effect transistors on spinel substrates
11/25/1992EP0515093A1 Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets
11/25/1992EP0515039A2 A complementary low power non-volatile reconfigurable eecell
11/25/1992EP0514602A1 MOSFET channel structure and method of fabrication
11/25/1992EP0514395A1 Crystal-oriented motion sensor and process for manufacturing it
11/24/1992US5166904 EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
11/24/1992US5166857 Electronically tunable capacitor switch
11/24/1992US5166771 Self-aligning contact and interconnect structure
11/24/1992US5166770 Silicided structures having openings therein
11/24/1992US5166769 Passitvated mesa semiconductor and method for making same
11/24/1992US5166767 Sidewall contact bipolar transistor with controlled lateral spread of selectively grown epitaxial layer
11/24/1992US5166765 Insulated gate field-effect transistor with pulse-shaped doping
11/24/1992US5166764 Input protection device
11/24/1992US5166763 Static type semiconductor memory device and method of manufacturing thereof
11/24/1992US5166760 Semiconductor Schottky barrier device with pn junctions
11/24/1992US5166758 Electrically erasable phase change memory
11/24/1992US5166095 Low contact resistance process
11/24/1992US5166094 Method of fabricating a base-coupled transistor logic
11/24/1992US5166091 Fabrication method in vertical integration
11/24/1992US5166086 Thin film transistor array and method of manufacturing same
11/24/1992US5166085 Method of manufacturing a thin film transistor
11/24/1992US5166084 Process for fabricating a silicon on insulator field effect transistor
11/24/1992US5166083 Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
11/24/1992US5166082 BIMOS transistor devices having bipolar and MOS transistors formed in substrate thereof and process for the fabrication of the same
11/24/1992US5166081 Method of producing a bipolar transistor
11/24/1992US5165973 Ink jet recording sheet
11/24/1992US5165282 Semiconductor pressure sensor
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