| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/05/1993 | US5177583 Heterojunction bipolar transistor |
| 01/05/1993 | US5177582 CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same |
| 01/05/1993 | US5177578 Polycrystalline silicon thin film and transistor using the same |
| 01/05/1993 | US5177577 Liquid crystal display device with TFT's each including a Ta gate electrode and an anodized Al oxide film |
| 01/05/1993 | US5177572 Mos device using accumulation layer as channel |
| 01/05/1993 | US5177571 Ldd mosfet with particularly shaped gate electrode immune to hot electron effect |
| 01/05/1993 | US5177570 MOS semiconductor device with high dielectric constant sidewall insulator and induced source/drain extension |
| 01/05/1993 | US5177569 Semiconductor device having a two layered structure gate electrode |
| 01/05/1993 | US5177568 Tunnel injection semiconductor devices with schottky barriers |
| 01/05/1993 | US5177452 Stabilized circuit of high output power transistor for microwave and milliwave |
| 01/05/1993 | US5177029 Method for manufacturing static induction type semiconductor device enhancement mode power |
| 01/05/1993 | US5177028 Trench isolation method having a double polysilicon gate formed on mesas |
| 01/05/1993 | US5177027 Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path |
| 01/05/1993 | US5177026 Etching; depositing metal electrodes on exposed channel layer; Schottky barriers |
| 01/05/1993 | US5177025 Doping; forming diffusion suppression region; bipolar transistors |
| 01/05/1993 | US5176969 Electrode for secondary battery |
| 12/30/1992 | EP0520966A2 Electron wave guiding quantum-effect switch |
| 12/30/1992 | EP0520825A1 Process for the simultaneous fabrication of high- and low voltage semiconductor devices, integrated circuit containing the same, systems and methods |
| 12/30/1992 | EP0520713A2 Process for thin film transistor device fabrication with reduced number of mask steps |
| 12/30/1992 | EP0520701A1 An integrated solution to high voltage load dump conditions |
| 12/30/1992 | EP0520605A2 A solid-state imaging device and a method for driving same |
| 12/30/1992 | EP0520560A2 Thin-film transistors and their manufacture |
| 12/30/1992 | EP0520505A2 Nonvolatile semiconductor memory device and its operating method |
| 12/30/1992 | EP0520482A2 Multiple layer collector structure for bipolar transistors |
| 12/30/1992 | EP0520448A1 Panel having thin film element formed thereon |
| 12/30/1992 | EP0520355A1 Gate turn-off semi-conductor power component and method of making the same |
| 12/30/1992 | EP0520214A1 Method of forming a doped region in a substrate and use in the fabrication of a bipolar transistor |
| 12/30/1992 | EP0520168A2 MOS-type semiconductor device drive circuit |
| 12/30/1992 | CN1067528A Single-barrier quantum-trap injection transit time semiconductor device |
| 12/30/1992 | CN1019720B Power semiconductor device |
| 12/29/1992 | US5175705 Semiconductor memory device having circuit for prevention of overcharge of column line |
| 12/29/1992 | US5175604 Field-effect transistor device |
| 12/29/1992 | US5175603 Bipolar transistor |
| 12/29/1992 | US5175602 Pseudo bi-phase charge coupled device having narrow channel effect |
| 12/29/1992 | US5175599 MOS semiconductor device |
| 12/29/1992 | US5175598 Semiconductor switching device |
| 12/29/1992 | US5175597 Semiconductor component with schottky junction for microwave amplification and fast logic circuits |
| 12/29/1992 | US5175129 Method of fabricating a semiconductor structure having an improved polysilicon layer |
| 12/29/1992 | US5175120 Patterning and etching separately of conductive and dielectric materials of different conductivity types |
| 12/29/1992 | US5175119 Method of producing insulated-gate field effect transistor |
| 12/29/1992 | US5175118 Dry etching, wet etching high melting point metal silicide layer |
| 12/29/1992 | US5175117 Method for making buried isolation |
| 12/29/1992 | US5174858 Method of forming contact structure |
| 12/29/1992 | US5174857 Slope etching process |
| 12/29/1992 | CA2072264A1 Thin-film transistor manufacture |
| 12/29/1992 | CA1312148C Metal-semiconductor field-effect transistor formed in silicon carbide |
| 12/24/1992 | DE4219854A1 Electrically erasable and programmable semiconductor module - has first conductivity substrate with bounded by side walls and bottom |
| 12/24/1992 | DE4219342A1 MOS transistor with reduced short channel effect and series resistance - uses three implant levels for drain-source which are self-aligned using a double layer spacer |
| 12/24/1992 | DE4120394A1 Monolithisch integrierte schaltungsanordnung The monolithic integrated circuit arrangement |
| 12/23/1992 | WO1992022927A2 A semiconductor component for transient voltage limiting |
| 12/23/1992 | WO1992022926A1 A monolithic semiconductor component for transient voltage suppression |
| 12/23/1992 | WO1992022925A1 Stable amorphous materials such as silicon |
| 12/23/1992 | WO1992022820A2 Semiconductor accelerometer and method of its manufacture |
| 12/23/1992 | EP0519854A2 A method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface and device derived therefrom |
| 12/23/1992 | EP0519830A2 Hemt type semiconductor device |
| 12/23/1992 | EP0519741A2 High-breakdown-voltage semiconductor element |
| 12/23/1992 | EP0519692A2 Thin film transistor and method for manufacturing the same |
| 12/23/1992 | EP0519632A2 Semiconductor device with high off-breakdown-voltage and low on-resistance and method of manufacturing the same |
| 12/23/1992 | EP0519472A2 Diamond-metal junction product |
| 12/23/1992 | EP0519352A2 Semiconductor device provided with contact through a thick insulating film |
| 12/23/1992 | EP0519268A2 High-voltage transistor |
| 12/23/1992 | EP0472647A4 Voltage stress alterable esd protection structure |
| 12/23/1992 | EP0472592A4 Low trigger voltage scr protection device and structure |
| 12/22/1992 | US5173835 Voltage variable capacitor |
| 12/22/1992 | US5173792 Electrooptical display with compensative redundancy means |
| 12/22/1992 | US5173761 Large breakdown voltage |
| 12/22/1992 | US5173757 Charge detection circuit for use in charge transfer device |
| 12/22/1992 | US5173753 Inverted coplanar amorphous silicon thin film transistor which provides small contact capacitance and resistance |
| 12/22/1992 | US5173752 Semiconductor device having interconnection layer contacting source/drain regions |
| 12/22/1992 | US5173445 Method of making p-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine |
| 12/22/1992 | US5173436 Having floating-gate transistor, tunnel windows; patterning, doping, growing gate oxides |
| 12/22/1992 | US5173435 Insulated gate bipolar transistor |
| 12/22/1992 | US5173127 Semi-insulating inp single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
| 12/22/1992 | CA1311862C Devices having shallow junctions |
| 12/22/1992 | CA1311859C Bipolar transistor having self-aligned emitter-base and method of forming same using selective and non-selective epitaxy |
| 12/22/1992 | CA1311858C Resonant-tunneling three-terminal unipolar device |
| 12/17/1992 | DE4219019A1 MOS semiconductor element e.g. for power MOSFET, IGBT, etc. |
| 12/16/1992 | EP0518790A1 Bidirectional protection part |
| 12/16/1992 | EP0518683A1 High power, high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
| 12/16/1992 | EP0518637A2 Semiconductor radio-frequency power detector |
| 12/16/1992 | EP0518605A2 Bi-directional surge suppressor circuit |
| 12/16/1992 | EP0518418A1 Method of manufacturing a semiconductor device whereby field oxide regions are formed in a surface of a silicon body through oxidation |
| 12/16/1992 | EP0518000A2 Non-volatile semiconductor memory device and method for manufacturing the same |
| 12/16/1992 | EP0517842A1 Electronic devices and methods of constructing and utilizing same |
| 12/15/1992 | US5172399 Semiconductor charge transfer device including charge quantity detection |
| 12/15/1992 | US5172290 Gate-source protective circuit for a power mosfet |
| 12/15/1992 | US5172212 Semiconductor having an improved electrode pad |
| 12/15/1992 | US5172208 Thyristor |
| 12/15/1992 | US5172204 Artificial ionic synapse |
| 12/15/1992 | US5172203 IC chip |
| 12/15/1992 | US5172201 Semiconductor memory device with increased capacitance of capacitor and manufacturing method thereof |
| 12/15/1992 | US5172200 MOS memory device having a LDD structure and a visor-like insulating layer |
| 12/15/1992 | US5172199 Compact nonvolatile semiconductor memory device using stacked active and passive elements |
| 12/15/1992 | US5172198 MOS type semiconductor device |
| 12/15/1992 | US5172197 Hemt structure with passivated donor layer |
| 12/15/1992 | US5172196 Nonvolatile semiconductor memory device |
| 12/15/1992 | US5172194 High speed gallium-arsenic transistor |
| 12/15/1992 | US5171713 Forming projections on substrates; overcoating with polyimide; etching |
| 12/15/1992 | US5171705 Self-aligned structure and process for DMOS transistor |
| 12/15/1992 | US5171704 Gaas device fabrication utilizing metalorganic molecular beam epitaxy (mombe) |