| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/03/1993 | EP0526084A1 Insulated gate bipolar transistor and method of fabricating same |
| 02/03/1993 | EP0526043A1 Semiconductor device with low resistance contact and method of manufacturing the same |
| 02/03/1993 | EP0526037A1 Lateral insulated gate bipolar transistor |
| 02/03/1993 | EP0525762A2 Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same |
| 02/03/1993 | EP0525650A2 Semiconductor device with capacitor insulating film and method for fabricating the same |
| 02/03/1993 | EP0525619A1 Compound semiconductor single crystal |
| 02/03/1993 | EP0525587A1 Field effect controllable semi-conductor device |
| 02/03/1993 | EP0525517A1 Method of filling at least one contact hole in an insulating layer |
| 02/03/1993 | EP0524951A1 Process for manufacturing micro-mechanical sensors. |
| 02/03/1993 | EP0524950A1 Process for manufacturing mechanical micro-structures. |
| 02/02/1993 | US5184204 Semiconductor device with high surge endurance |
| 02/02/1993 | US5184203 Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate |
| 02/02/1993 | US5184201 Static induction transistor |
| 02/02/1993 | US5184199 Silicon carbide semiconductor device |
| 02/02/1993 | US5184198 Special geometry Schottky diode |
| 02/02/1993 | US5184007 Method of driving a thin film transistor type optical sensor and the drive unit |
| 02/02/1993 | US5183780 Dopant source; melting both insulator and semiconductor films with high-energy beam; forming doped polycrystalline contact hole without patterning and etching |
| 02/02/1993 | US5183778 Forming two layers of crystalline gallium arsenide with intervening layer of crystalline germanium; defect reduction |
| 02/02/1993 | US5183777 Method of forming shallow junctions |
| 02/02/1993 | US5183771 Method of manufacturing lddfet having double sidewall spacers |
| 02/02/1993 | US5183770 Diffusion regions formed with use of gate electrode as mask; reduced crystalline defects |
| 02/02/1993 | US5183769 Diffusing pre-deposited dopant |
| 02/02/1993 | US5183768 Method of fabricating semiconductor device by forming doped regions that limit width of the base |
| 02/02/1993 | CA2000024C Resonant tunneling semiconductor devices |
| 01/27/1993 | EP0524766A2 Liquid crystal display device |
| 01/27/1993 | EP0524620A2 Field effect transistor and high frequency circuits using the same |
| 01/27/1993 | EP0524189A1 Optically compensated bipolar transistor |
| 01/26/1993 | US5182661 Thin film field effect transistor array for use in active matrix liquid crystal display |
| 01/26/1993 | US5182626 Insulated gate bipolar transistor and method of manufacturing the same |
| 01/26/1993 | US5182620 Active matrix display device |
| 01/26/1993 | US5182619 Semiconductor device having an MOS transistor with overlapped and elevated source and drain |
| 01/26/1993 | US5182234 Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen |
| 01/26/1993 | US5182226 Method for fabrication of a field oxide of the buried inverse t-type using oxygen or nitrogen ion implantation |
| 01/26/1993 | US5182225 Process for fabricating BICMOS with hypershallow junctions |
| 01/26/1993 | US5182224 Method of making dynamic random access memory cell having a SDHT structure |
| 01/26/1993 | US5182222 Process for manufacturing a DMOS transistor |
| 01/21/1993 | WO1993001620A1 A gto-thyristor and a method for the manufacture of a gto-thyristor |
| 01/21/1993 | DE4222785A1 Improvement of high frequency operation of discrete MOSFET - by removal of an external parasitic capacitance between drain and gate, by mounting the external gate contact above the source contact |
| 01/21/1993 | DE4221039A1 Power integrated circuit device with vertical output element - has peripheral circuit and vertical power element formed on different surface zones of substrate |
| 01/21/1993 | DE4123414A1 Leistungs-halbleiterbauelement und verfahren zu dessen herstellung Power semiconductor component and process for its manufacture |
| 01/21/1993 | DE4123207A1 Semiconductor current cut=out switch e.g. for communications or display control - uses oval zones of opposite conductivity in semiconductor substrate arranged in T-configuration |
| 01/20/1993 | EP0524067A1 High definition active matrix liquid crystal screen |
| 01/20/1993 | EP0524030A2 Semiconductor device equipped with a high-voltage misfet |
| 01/20/1993 | EP0524025A2 High-value resistors and methods for making same |
| 01/20/1993 | EP0523984A1 Solid state image pick-up element |
| 01/20/1993 | EP0523817A2 Improved programmable logic device |
| 01/20/1993 | EP0523800A1 An overvoltage protected semiconductor switch |
| 01/20/1993 | EP0523799A1 A temperature sensing circuit |
| 01/20/1993 | EP0523798A1 A temperature sensing device and a temperature sensing circuit using such a device |
| 01/20/1993 | EP0523784A1 An image detector and a method of manufacturing such an image detector |
| 01/20/1993 | EP0523768A2 Thin-film transistor manufacture |
| 01/20/1993 | EP0523731A2 Field effect transistor and method for manufacturing the same |
| 01/20/1993 | EP0523593A1 Field effect transistor |
| 01/20/1993 | EP0523487A2 Heterostructure field effect transistor with pulse doped channel |
| 01/20/1993 | EP0523223A1 Power metal-oxide-semiconductor field effect transistor |
| 01/19/1993 | US5181092 Input protection resistor used in input protection circuit |
| 01/19/1993 | US5181090 High voltage cmos devices |
| 01/19/1993 | US5181088 Vertical field effect transistor with an extended polysilicon channel region |
| 01/19/1993 | US5181087 Filed effect transistor, recessed gate electrode |
| 01/19/1993 | US5181085 Compound semiconductor device with bipolar transistor and laser diode |
| 01/19/1993 | US5181083 Pin diode with a low peak-on effect |
| 01/19/1993 | US5180690 Method of forming a layer of doped crystalline semiconductor alloy material |
| 01/19/1993 | US5180684 Semiconductor growth process |
| 01/19/1993 | US5180682 Semiconductor device and method of producing semiconductor device |
| 01/19/1993 | US5180681 Semiconductors |
| 01/19/1993 | CA1312964C Low stress polysilicon microstructures |
| 01/18/1993 | CA2073826A1 Field effect transistor and method for manufacturing the same |
| 01/13/1993 | EP0522991A1 Inverse T-gate FET transistor |
| 01/13/1993 | EP0522952A2 Field effect transistor with thin barrier layers and a thin doped layer |
| 01/13/1993 | EP0522943A1 Semiconductor device having a heterojunction interface for transporting carriers with improved carrier mobility |
| 01/13/1993 | EP0522938A1 Method for fabrication of a vertical field effect transistor and transistor obtained by this method |
| 01/13/1993 | EP0522712A2 Thyristor with insulated gate |
| 01/13/1993 | EP0522670A1 Fast switching lateral insulated gate field effect transistor |
| 01/13/1993 | EP0522588A1 Semiconductor integrated circuit device employing MOSFETs |
| 01/13/1993 | EP0522563A2 Semiconductor chip module and method of manufacturing the same |
| 01/13/1993 | EP0522292A2 Charge detecting device |
| 01/13/1993 | EP0521947A1 Staircase sidewall spacer for improved source/drain architecture |
| 01/13/1993 | CA2072377A1 Semiconductor chip module and method of manufacturing the same |
| 01/12/1993 | US5179537 Semiconductor memory device having monitoring function |
| 01/12/1993 | US5179041 Lamination, annealing |
| 01/12/1993 | US5179037 Integration of lateral and vertical quantum well transistors in the same epitaxial stack |
| 01/12/1993 | US5179036 Process for fabricating Bi-CMOS integrated circuit |
| 01/12/1993 | US5179034 P-well layers |
| 01/12/1993 | US5179033 Method for manufacturing tft sram |
| 01/12/1993 | US5179032 Mosfet structure having reduced capacitance and method of forming same |
| 01/12/1993 | US5179030 Method of fabricating a buried zener diode simultaneously with other semiconductor devices |
| 01/12/1993 | US5178370 Conductivity modulated insulated gate semiconductor device |
| 01/12/1993 | CA2006266C Method for the epitaxial growth of a semiconductor structure |
| 01/12/1993 | CA1312679C Sidewall contact bipolar transistor with controlled lateral spread of selectively grown epitaxial layer |
| 01/07/1993 | WO1993000709A1 Monolithically integrated circuit |
| 01/07/1993 | WO1992021151A3 High-speed peristaltic ccd imager with gaas fet output |
| 01/07/1993 | EP0521802A2 Avalanche diode in a bipolar integrated circuit |
| 01/07/1993 | EP0521696A1 Self-doped high performance complementary heterojunction field effect transistor |
| 01/07/1993 | EP0521690A2 Non-volatile memory and method of manufacturing the same |
| 01/07/1993 | EP0521676A1 Thin-film capacitor in semiconductor integrated circuit device, and method of manufacture thereof |
| 01/07/1993 | EP0521565A1 Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device |
| 01/07/1993 | EP0521558A2 Semiconductor device with means for increasing the breakdown voltage of a pn-junction |
| 01/06/1993 | CN1067765A Threshold switching device |
| 01/05/1993 | US5177659 Device for protection against the short circuit of an MOS-type power device, with a preset dependance on the temperature at which the power device operates |
| 01/05/1993 | US5177585 P-n-p diamond transistor |