| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/03/1993 | EP0529417A1 CCD shift register |
| 03/03/1993 | EP0529322A1 MOS-controlled thyristor (MCT) |
| 03/03/1993 | EP0529234A2 Semiconductor memory device |
| 03/03/1993 | EP0444134A4 Solid state, quantum mechanical, electron and hole wave devices |
| 03/03/1993 | CN1020029C 半导体器件 Semiconductor devices |
| 03/03/1993 | CN1020027C Lateral PNP Transistor using latch voltage of NPN transistor |
| 03/03/1993 | CN1020026C Integrated bipolar and cmos transistor fabrication process |
| 03/03/1993 | CN1020022C Gap measuring device |
| 03/02/1993 | US5191599 Control device for a charge detection circuit |
| 03/02/1993 | US5191551 Non-volatile semiconductor memory device with transistor paralleling floating gate transistor |
| 03/02/1993 | US5191453 Active matrix substrate for liquid-crystal display and method of fabricating the active matrix substrate |
| 03/02/1993 | US5191451 Active matrix display device having drain electrodes of the pair of tfts being symmetrically formed with respect to the central plane to prevent the flicker due to the different parasitic capacitances |
| 03/02/1993 | US5191402 Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
| 03/02/1993 | US5191401 Semiconductor device |
| 03/02/1993 | US5191399 Solid-state imaging device with improved photodetector |
| 03/02/1993 | US5191398 Charge transfer device producing a noise-free output |
| 03/02/1993 | US5191397 SOI semiconductor device with a wiring electrode contacts a buried conductor and an impurity region |
| 03/02/1993 | US5191396 High power mosfet with low on-resistance and high breakdown voltage |
| 03/02/1993 | US5191395 Mos type semiconductor device with means to prevent parasitic bipolar transistor |
| 03/02/1993 | US5191237 Field-effect transistor type semiconductor sensor |
| 03/02/1993 | US5191216 Quantum mechanical semiconductor device with electron/hole diffractive grating |
| 03/02/1993 | US5190888 Method for producing a doped polycide layer on a semiconductor substrate |
| 03/02/1993 | US5190887 Method of making electrically erasable and electrically programmable memory cell with extended cycling endurance |
| 03/02/1993 | US5190884 Method of making vertical PNP transistor |
| 03/02/1993 | US5189777 Method of producing micromachined differential pressure transducers |
| 02/24/1993 | EP0528742A1 Field effect transistor formed with wide-submicron gate |
| 02/24/1993 | EP0528715A1 Low-noise field effect transistor |
| 02/24/1993 | EP0528690A1 Contact alignment for read only memory devices |
| 02/24/1993 | EP0528662A1 Organic field effect transistor |
| 02/24/1993 | EP0528596A1 Method for making field effect devices with ultra-short gates and devices made thereby |
| 02/24/1993 | EP0528564A2 Self-aligned stacked gate EPROM cell using tantalum oxide control gate dielectric |
| 02/24/1993 | EP0528349A1 Insulated gate bipolar transistor having high breakdown voltage |
| 02/24/1993 | EP0528290A1 Semiconductor device and manufacturing method thereof |
| 02/24/1993 | EP0528281A2 Structure of circuit having at least a capacitor and process of fabrication |
| 02/24/1993 | EP0528149A1 Flat panel display device comprising an alkaline earth aluminoborosilicate glass substrate |
| 02/23/1993 | US5189594 Capacitor in a semiconductor integrated circuit and non-volatile memory using same |
| 02/23/1993 | US5189593 Integrated distributed resistive-capacitive network |
| 02/23/1993 | US5189509 Semiconductor device and electrode block for the same |
| 02/23/1993 | US5189504 Semiconductor device of MOS structure having p-type gate electrode |
| 02/23/1993 | US5189503 Insulator film of transition metal oxide and pieces of dissimilar metal; stabilization |
| 02/23/1993 | US5189500 Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof |
| 02/23/1993 | US5189499 Charge-coupled device and process of fabrication thereof |
| 02/23/1993 | US5189498 Charge coupled device |
| 02/23/1993 | US5189497 Semiconductor memory device |
| 02/23/1993 | US5188987 Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step |
| 02/23/1993 | US5188973 Method of manufacturing SOI semiconductor element |
| 02/23/1993 | US5188971 Partially etching isoation trench, doping sidewall, heating to diffuse, cutting |
| 02/23/1993 | US5187986 Semiconductor sensor |
| 02/18/1993 | WO1993003503A1 High frequency jfet and method for fabricating the same |
| 02/18/1993 | WO1993003502A1 Method of producing vertical mosfet |
| 02/18/1993 | DE4225738A1 Bipolartransistor mit isolierter gate-elektrode Insulated-gate bipolar transistor |
| 02/17/1993 | EP0527600A1 Insulated trench gate bipolar transistor |
| 02/17/1993 | EP0527547A2 Semiconductor laser device |
| 02/17/1993 | EP0527372A1 Manufacturing method for a bipolar transistor |
| 02/17/1993 | EP0527342A1 Differential capacitor structure and fabricating method |
| 02/17/1993 | EP0527320A1 Flat panel display device comprising a strontium aluminosilicate glass substrate |
| 02/17/1993 | EP0353271B1 Analog-to-digital converter made with focused ion beam technology |
| 02/16/1993 | US5187715 Quantum well optical device |
| 02/16/1993 | US5187638 Barrier layers for ferroelectric and pzt dielectric on silicon |
| 02/16/1993 | US5187637 Monolithic high-voltage capacitor |
| 02/16/1993 | US5187636 Having high permittivity; capacitors; silicon, silica and silicon nitride layers |
| 02/16/1993 | US5187602 Liquid crystal display apparatus |
| 02/16/1993 | US5187561 Metal single crystal line having a particular crystal orientation |
| 02/16/1993 | US5187560 Ohmic electrode for n-type cubic boron nitride and the process for manufacturing the same |
| 02/16/1993 | US5187558 Stress reduction structure for a resin sealed semiconductor device |
| 02/16/1993 | US5187554 Bipolar transistor |
| 02/16/1993 | US5187552 Shielded field-effect transistor devices |
| 02/16/1993 | US5187551 Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers |
| 02/16/1993 | US5187379 Field effect transistor and manufacturing method therefor |
| 02/16/1993 | US5187117 Eliminates all but one diffusion step, no intervening high temperature step |
| 02/16/1993 | US5187113 Field oxide termination and gate oxide formation |
| 02/16/1993 | US5187112 Depositing insulating film on substrate, removing part of film to form side wall, depositing metal, etching, doping, asymmetrical electrodes |
| 02/16/1993 | US5187109 Forming on surface of substrate a layer of semiconductor material of opposite conductivity type, forming insulator layer, depositing polycrystalline silicon, doping, annealing |
| 02/16/1993 | US5187108 Method of manufacturing a bipolar transistor |
| 02/11/1993 | DE4126491A1 Power semiconductor component capable of being switched off - comprises five layers in p-n-p-n-p sequence in substrate between anode and cathode |
| 02/10/1993 | EP0526993A1 Charge multiplying detector (CMD) suitable for small pixel CCD image sensors |
| 02/10/1993 | EP0526939A1 Semiconductor lateral insulated gate bipolar transistor |
| 02/10/1993 | EP0526897A2 Three terminal tunnel device |
| 02/10/1993 | EP0526870A2 Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure |
| 02/10/1993 | EP0526646A1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof. |
| 02/09/1993 | US5185649 Circuital arrangement for preventing latchup in transistors with insulated collectors |
| 02/09/1993 | US5185646 Semiconductor device with improved current drivability |
| 02/09/1993 | US5185601 Active matrix liquid crystal display apparatus and method of producing the same |
| 02/09/1993 | US5185534 Monolithic parallel connected transistor structure |
| 02/09/1993 | US5185294 Boron out-diffused surface strap process |
| 02/09/1993 | US5185280 Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact |
| 02/09/1993 | US5185277 Method for the making of a transistor gate |
| 02/09/1993 | US5185276 Method for improving low temperature current gain of bipolar transistors |
| 02/09/1993 | US5185275 Snap-back preventing method for high voltage MOSFET |
| 02/09/1993 | US5185274 Self-aligned, self-passivated advanced dual lift-off heterojunction bipolar transistor method |
| 02/09/1993 | CA1313571C Metal oxide semiconductor field-effect transistor formed in silicon carbide |
| 02/09/1993 | CA1313570C Metalization systems for heater/sensor elements |
| 02/04/1993 | WO1993002477A1 Turn-off thyristor system |
| 02/04/1993 | WO1993002476A1 Quantum mechanical semiconductor device with electron/hole diffractive grating |
| 02/04/1993 | WO1993002475A1 High temperature rectifying contact and method for making same |
| 02/04/1993 | WO1993002474A1 Power semiconductor component and process for producing it |
| 02/04/1993 | WO1993002471A1 High temperature refractory silicide rectifying contact and method for making same |
| 02/04/1993 | WO1993002469A1 Method for producing integrated circuits having adjacent electrodes, and corresponding integrated circuits |
| 02/04/1993 | WO1992022927A3 A semiconductor component for transient voltage limiting |
| 02/03/1993 | EP0526374A1 Lateral bipolar transistor and method of making the same |