| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/30/1993 | US5198689 Silicon layer and tungsten layer, germanium dopes and emitter layers |
| 03/30/1993 | US5198688 Semiconductor device provided with a conductivity modulation MISFET |
| 03/30/1993 | US5198687 Base resistance controlled thyristor with single-polarity turn-on and turn-off control |
| 03/30/1993 | US5198392 Method of forming a nitrided silicon dioxide (SiOx Ny) film |
| 03/30/1993 | US5198382 Semiconductor element and manufacture thereof |
| 03/30/1993 | US5198381 Method of making an E2 PROM cell with improved tunneling properties having two implant stages |
| 03/30/1993 | US5198380 Electrically (erasable and) programmable read only memories |
| 03/30/1993 | US5198379 Method of making a MOS thin film transistor with self-aligned asymmetrical structure |
| 03/30/1993 | US5198378 Process of fabricating elevated source/drain transistor |
| 03/30/1993 | US5198373 Boron ion concentration |
| 03/30/1993 | US5198372 Multilayer semiconductors |
| 03/30/1993 | CA1315421C Thin film mos transistor having pair of gate electrodes opposing across semiconductor layer |
| 03/30/1993 | CA1315420C Modification of interfacial fields between dielectrics and semi-conductors |
| 03/24/1993 | EP0533640A1 Electrostatic discharge protective device having a reduced current leakage |
| 03/24/1993 | EP0533497A2 Dry etching method |
| 03/24/1993 | EP0533439A2 Constant-voltage diode, power converter using the same and process of producing constant-voltage diode |
| 03/24/1993 | EP0533203A2 Method for selectively etching a III-V semiconductor, in the production of a field effect transistor |
| 03/24/1993 | EP0532941A1 Thyristor with edge structure |
| 03/23/1993 | US5196914 Table cloth matrix of EPROM memory cells with an asymmetrical fin |
| 03/23/1993 | US5196912 Thin film transistor having memory function and method for using thin film transistor as memory element |
| 03/23/1993 | US5196908 Micro MIS type FET and manufacturing process therefor |
| 03/23/1993 | US5196907 Metal insulator semiconductor field effect transistor |
| 03/23/1993 | US5196722 Shadow ram cell having a shallow trench eeprom |
| 03/23/1993 | US5196361 Doping part of the channel adjacent to the source |
| 03/23/1993 | US5196359 Method of forming heterostructure field effect transistor |
| 03/23/1993 | US5196354 Passivation layer, packages, moisture resistant |
| 03/23/1993 | US5196257 Monomolecular porphyrin layers, amphiphilic |
| 03/23/1993 | US5195371 Semiconductor chip transducer |
| 03/23/1993 | CA1315018C P-type buffer layers for integrated circuits |
| 03/23/1993 | CA1315017C Heterojunction bipolar transistor and the manufacturing method thereof |
| 03/23/1993 | CA1314946C Protection of analog reference and bias voltage inputs |
| 03/18/1993 | WO1993005539A1 Semiconductor device and a method of manufacturing it |
| 03/18/1993 | WO1993005538A1 Gate overlapped lightly doped drain (goldd) structure for submicron transistor and method for making same |
| 03/18/1993 | WO1993005536A1 Eeprom cell with improved tunneling properties |
| 03/18/1993 | WO1993005535A1 Igbt process and device with platinum lifetime control |
| 03/18/1993 | DE4231012A1 Diode having improved heat radiation, etc. - contains high melting metal layer that can be soldered to semiconductor material between boundary surface of 1st layer and contact layer surface |
| 03/18/1993 | DE4230648A1 Prodn. of charge shifting element - used in solid body picture elements or signal delay elements |
| 03/18/1993 | DE4130247A1 Halbleiteranordnung und verfahren zu deren herstellung A semiconductor device and process for their preparation |
| 03/17/1993 | EP0532481A1 Electrostatic discharge protective structure |
| 03/17/1993 | EP0532355A2 Method for manufacturing a bipolar transistor having a reduced collector-base capacitance |
| 03/17/1993 | EP0532314A1 A semiconductor device and a process for fabricating same |
| 03/17/1993 | EP0531805A1 Gate electrode fabrication method |
| 03/17/1993 | EP0531707A2 Semiconductor memory cell and memory array with inversion layer |
| 03/17/1993 | EP0531621A2 Process for formation of delta-doped quantum well field effect transistor |
| 03/17/1993 | EP0531550A1 Field effect transistor |
| 03/17/1993 | EP0531526A1 Non-volatile semiconductor memory cell having gate electrode on sidewall of gate electrode part |
| 03/17/1993 | EP0232431B1 Semiconductor device |
| 03/17/1993 | EP0218685B1 Electrostatic discharge input protection network |
| 03/17/1993 | CN1070052A Semiconductor device and method forming same |
| 03/16/1993 | US5194929 Laminated gate electrodes and transistors, insulating films and conductive films with metal patterns |
| 03/16/1993 | US5194927 Semiconductor device |
| 03/16/1993 | US5194926 Semiconductor device having an inverse-T bipolar transistor |
| 03/16/1993 | US5194925 Electrically programmable non-volatie semiconductor memory device |
| 03/16/1993 | US5194923 Fermi threshold field effect transistor with reduced gate and diffusion capacitance |
| 03/16/1993 | US5194403 Raised patterns on semiconductors, reactive ion etching with chlorinated compounds |
| 03/16/1993 | US5194402 Semiconductors and electronic circuits |
| 03/16/1993 | US5194397 Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface |
| 03/16/1993 | US5194395 Preparing a stacked structure on a substrate and insulator, activation of semiconductors |
| 03/16/1993 | US5194394 Multilayer semiconductor element with electrodes |
| 03/16/1993 | US5194136 Process for making a display panel |
| 03/16/1993 | US5193394 Transducing device for accurately transducing a physical quantity into an electric signal |
| 03/11/1993 | DE4229628A1 Stacked semiconductor device with high bonding precision - includes semiconductor substrates bonded together by moderate temp. heat treatment |
| 03/11/1993 | DE4229574A1 FET with good current control even at low gate voltage - comprises principal surface and source and drain zones spaced apart on semiconductor substrate and nitride- and oxide-films on principal surface |
| 03/11/1993 | DE4129425A1 Power semiconductor with MISFET(s) for selective connection of PN junctions - has gates connected to strips of conductive grid enclosing pattern of emitter zones on semiconductor body |
| 03/10/1993 | EP0530942A2 Novel quantum well optoelectric switching device with stimulated emission |
| 03/10/1993 | EP0530928A2 Ferroelectric shadow RAM |
| 03/10/1993 | EP0530834A1 Thin-film transistor and method of manufacturing the same |
| 03/10/1993 | EP0530644A2 Non-Volatile memory cell and fabrication method |
| 03/10/1993 | EP0530497A1 Bipolar transistor |
| 03/10/1993 | EP0530376A1 Semiconductor memory having nonvolatile semiconductor memory cell |
| 03/10/1993 | EP0530352A1 SHALLOW OHMIC CONTACTS TO N-GaAs AND METHOD OF MAKING SAME |
| 03/09/1993 | US5193017 Reflective-type active matrix liquid crystal display device |
| 03/09/1993 | US5192994 N-type junctions on gold layers and alloying |
| 03/09/1993 | US5192993 Semiconductor device having improved element isolation area |
| 03/09/1993 | US5192990 Output circuit for image sensor |
| 03/09/1993 | US5192989 Lateral dmos fet device with reduced on resistance |
| 03/09/1993 | US5192988 Semiconductor integrated circuit device produced by charged-particle etching |
| 03/09/1993 | US5192987 Gallium nitride and aluminum gallium nitride junction layers |
| 03/09/1993 | US5192986 Heterojunction field effect transistor equipped with electrostatic lens for improving ballistic propagation |
| 03/09/1993 | US5192938 Resistor grids with backings of polyphenylene sulfide |
| 03/09/1993 | US5192872 Semiconductor device |
| 03/09/1993 | US5192871 Voltage variable capacitor having amorphous dielectric film |
| 03/09/1993 | US5192714 Semiconducotrs |
| 03/09/1993 | US5192705 Method for manufacturing semiconductor stacked CMOS devices |
| 03/09/1993 | US5192701 Semiconductor |
| 03/09/1993 | US5192700 Method of making field effect transistor |
| 03/09/1993 | US5192696 Field effect transistor and method of fabricating |
| 03/09/1993 | US5192395 Method of making a digital flexure beam accelerometer |
| 03/09/1993 | US5191798 Pressure sensor |
| 03/09/1993 | CA1314311C Mos ic reverse battery protection |
| 03/04/1993 | WO1993004506A1 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
| 03/04/1993 | WO1992021170A3 Blue-green laser diode |
| 03/03/1993 | EP0530051A2 A semiconductor device and a method for producing the same |
| 03/03/1993 | EP0530046A1 Integrated circuit transistor |
| 03/03/1993 | EP0529952A1 Improved silicide formation on polysilicon |
| 03/03/1993 | EP0529951A2 Improved dielectrics formed on a deposited semiconductor |
| 03/03/1993 | EP0529950A1 MOS field-effect transistor |
| 03/03/1993 | EP0529860A2 Method of making isolated vertical PNP transistor in a complementary BICMOS process with EEPROM memory |
| 03/03/1993 | EP0529772A1 Method of producing high reliability heterjunction bipolar transistors |
| 03/03/1993 | EP0529565A1 Semiconductor synapse circuit and neuron device using the same |