| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 03/25/1997 | US5614424 Method for fabricating an accumulated-base bipolar junction transistor |
| 03/25/1997 | US5614423 Method for fabricating a heterojunction bipolar transistor |
| 03/25/1997 | US5614422 Process for doping two levels of a double poly bipolar transistor after formation of second poly layer |
| 03/25/1997 | US5614421 Method of fabricating junction termination extension structure for high-voltage diode devices |
| 03/25/1997 | US5614291 Semiconductor device and method of manufacturing the same |
| 03/20/1997 | WO1997006559A3 Process for producing a non-volatile memory cell |
| 03/20/1997 | WO1997006554A3 Semiconductor device provided with transparent switching element |
| 03/20/1997 | DE19637189A1 Semiconductor component, e.g. MISFET |
| 03/20/1997 | DE19534780A1 Verfahren zum Erzeugen sehr kleiner Strukturweiten auf einem Halbleitersubstrat A method for generating very small feature sizes on a semiconductor substrate |
| 03/20/1997 | DE19534154A1 Field effect power semiconductor element, e.g. power MOSFET |
| 03/19/1997 | EP0763894A2 Semiconductor device controllable by field effect with several temperature sensors |
| 03/19/1997 | EP0763856A1 Semiconductor storage device and method of driving the same |
| 03/19/1997 | EP0763855A2 Asymmetrical FET and method of fabrication |
| 03/19/1997 | EP0763851A2 Method of forming an asymmetric, graded-channel semiconductor device using a disposable spacer |
| 03/19/1997 | EP0763829A2 Method for programming a nonvolatile memory |
| 03/19/1997 | EP0763744A1 Semiconductor stress sensor |
| 03/19/1997 | EP0763259A1 Punch-through field effect transistor |
| 03/19/1997 | EP0763257A2 Method of manufacturing a semiconductor device with a bicmos circuit |
| 03/19/1997 | EP0763256A2 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT |
| 03/19/1997 | EP0763255A1 Substrate anchor for undercut silicon on insulator microstructures |
| 03/19/1997 | CN1145534A Flash eeprom cell and manfacturing methods thereof |
| 03/18/1997 | US5613140 Quantum dot-tunnel device which can be selectively excited by a first light emitting source and the information thus stored can be read with a second light emitting source |
| 03/18/1997 | US5612914 Asymmetrical non-volatile memory cell, arrays and methods for fabricating same |
| 03/18/1997 | US5612913 Byte erasable EEPROM fully compatible with a single power supply flash-EPROM process |
| 03/18/1997 | US5612739 Charge transfer device |
| 03/18/1997 | US5612569 Semiconductor device |
| 03/18/1997 | US5612568 Low-noise zener diode |
| 03/18/1997 | US5612567 Schottky barrier rectifiers and methods of forming same |
| 03/18/1997 | US5612566 Bidirectional blocking lateral MOSFET with improved on-resistance |
| 03/18/1997 | US5612565 Semiconductor device having channel boundary with uneven shape |
| 03/18/1997 | US5612564 Semiconductor device with limiter diode |
| 03/18/1997 | US5612563 Vertically stacked vertical transistors used to form vertical logic gate structures |
| 03/18/1997 | US5612562 Semiconductor component for supplying, recirculating and demagnetizing an inductive load |
| 03/18/1997 | US5612561 Involatile semiconductor memory |
| 03/18/1997 | US5612559 Semiconductor device having pillar shaped transistor and a method for manufacturing the same |
| 03/18/1997 | US5612557 Semiconductor device having an inter-layer insulating film disposed between two wiring layers |
| 03/18/1997 | US5612555 Full frame solid-state image sensor with altered accumulation potential and method for forming same |
| 03/18/1997 | US5612554 Charge detection device and driver thereof |
| 03/18/1997 | US5612551 AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications |
| 03/18/1997 | US5612550 Heterojunction type semiconductor device having ordered phase alloy layers for active and cladding layers |
| 03/18/1997 | US5612547 Silicon carbide static induction transistor |
| 03/18/1997 | US5612546 Thin film transistor structure |
| 03/18/1997 | US5612488 Semiconductor acceleration detecting device |
| 03/18/1997 | US5612260 Oxidation of silicon carbide to form silicon dioxide |
| 03/18/1997 | US5612255 One dimensional silicon quantum wire devices and the method of manufacture thereof |
| 03/18/1997 | US5612253 Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three-step anneal process |
| 03/18/1997 | US5612246 Method for manufacturing semiconductor substrate having buck transistor and SOI transistor areas |
| 03/18/1997 | US5612245 Method of manufacturing CMOS device |
| 03/18/1997 | US5612244 Insulated gate semiconductor device having a cavity under a portion of a gate structure and method of manufacture |
| 03/18/1997 | US5612243 Polycide local interconnect method and structure |
| 03/18/1997 | US5612236 Method of forming a silicon semiconductor device using doping during deposition of polysilicon |
| 03/18/1997 | US5612235 Method of making thin film transistor with light-absorbing layer |
| 03/18/1997 | US5612233 Method for manufacturing a single electron component |
| 03/18/1997 | US5612230 Process for manufacturing a semiconductor device by applying a non-single-crystalline material on a sidewall inside of an opening portion for growing a single-crystalline semiconductor body |
| 03/18/1997 | US5611940 Microsystem with integrated circuit and micromechanical component, and production process |
| 03/18/1997 | CA2058513C Soi-type thin film transistor and manufacturing method therefor |
| 03/13/1997 | WO1997009742A1 Switched magnetic field sensitive field effect transistor device |
| 03/13/1997 | DE19636727A1 Halbleiterbauelement und Verfahren zur Herstellung des Halbleiterbauelements A semiconductor device and method of manufacturing the semiconductor device |
| 03/13/1997 | DE19636553A1 Integrated semiconductor circuit device with e.g. thyristor for solid state relay |
| 03/13/1997 | DE19636302A1 Silicon carbide semiconductor device, e.g. vertical high power MOSFET |
| 03/13/1997 | DE19629090A1 High power bipolar transistor, e.g. HBT, for handling HF signal |
| 03/13/1997 | DE19533313A1 Semiconductor transistor device structure for e.g. CMOS FET |
| 03/12/1997 | EP0762631A2 Power amplification circuit |
| 03/12/1997 | EP0762512A1 Schottky barrier diode |
| 03/12/1997 | EP0762511A1 Bipolar transistor and method of manufacturing the same |
| 03/12/1997 | EP0762510A2 Method for fabricating a monolithic semiconductor device with integrated surface micromachined structures |
| 03/12/1997 | EP0762508A2 Semiconductor device having charge transfer device equipped with three semiconductor layers of same conductivity type with mutually different concentrations |
| 03/12/1997 | EP0762500A1 Planar PIN diode and method of manufacturing the same |
| 03/12/1997 | EP0762499A1 Monolithic integrated device of PIN diode and field effect transistor and method of manufacturing the same |
| 03/12/1997 | EP0762492A1 Semiconductor device manufacturing method |
| 03/12/1997 | EP0762490A2 Method of manufacturing a LDD-MOSFET |
| 03/12/1997 | EP0762489A2 Method for fabricating a heterojunction bipolar transistor |
| 03/12/1997 | EP0762485A2 Method of manufacturing a contact hole |
| 03/12/1997 | EP0762184A1 Transmission type liquid crystal display device and method for fabricating the same |
| 03/12/1997 | EP0762096A1 Vertically integrated sensor structure and method for making same |
| 03/12/1997 | EP0761017A1 Semiconductor device of the type sealed in glass having a silver-copper bonding layer between slugs and connection conductors |
| 03/12/1997 | EP0761016A1 Semiconductor device provided with an ligbt element |
| 03/12/1997 | EP0761015A1 Semiconductor device of the type sealed in glass comprising a semiconductor body connected to slugs by means of a silver-aluminium bonding layer |
| 03/12/1997 | EP0760966A1 Large aperture ratio array architecture for active matrix liquid crystal displays |
| 03/12/1997 | EP0564467B1 Circuit for protecting a semiconductor device from voltage produced by discharges of static electricity |
| 03/12/1997 | CN1145138A Circuit device and junction field transistor suitable for the circuit device |
| 03/12/1997 | CN1144975A Grid-controlled transistor |
| 03/11/1997 | US5610853 Ferroelectric material, and semiconductor memory, optical recording medium and micro-displacement control device using the ferroelectric material |
| 03/11/1997 | US5610799 Power module device |
| 03/11/1997 | US5610747 High density, three-dimensional, intercoupled circuit structure |
| 03/11/1997 | US5610737 Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon |
| 03/11/1997 | US5610736 Active matrix type display device in which elongated electrodes underlie the signal lines to form capacitors with the pixel electrodes and manufacturing method |
| 03/11/1997 | US5610439 Press-contact type semiconductor devices |
| 03/11/1997 | US5610435 Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio |
| 03/11/1997 | US5610434 Mesa semiconductor structure |
| 03/11/1997 | US5610432 Semiconductor device with a fast lateral dmost provided with a high-voltage source electrode |
| 03/11/1997 | US5610430 Semiconductor device having reduced gate overlapping capacitance |
| 03/11/1997 | US5610428 Semiconductor integrated circuit |
| 03/11/1997 | US5610427 Electrostatic protection device for use in semiconductor integrated circuit |
| 03/11/1997 | US5610425 Input/output electrostatic discharge protection circuit for an integrated circuit |
| 03/11/1997 | US5610424 Metal oxide semiconductor field effect transistor |
| 03/11/1997 | US5610422 Semiconductor device having a buried insulated gate |
| 03/11/1997 | US5610421 Integrated circuit with EPROM cells |
| 03/11/1997 | US5610420 Semiconductor integrated circuit device and method of manufacturing the same |
| 03/11/1997 | US5610419 Semiconductor integrated circuit device with elements isolated by trenches |