| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/17/1997 | US5640033 MOSFET having fine gate electrode structure |
| 06/17/1997 | US5640032 Non-volatile semiconductor memory device with improved rewrite speed |
| 06/17/1997 | US5640031 Spacer flash cell process |
| 06/17/1997 | US5640029 Field-effect transistor and method of producing same |
| 06/17/1997 | US5640028 Charge transfer device with reduced parasitic capacitances for improved charge transferring |
| 06/17/1997 | US5640026 Compound semiconductor device including implanted isolation regions |
| 06/17/1997 | US5640025 High frequency semiconductor transistor |
| 06/17/1997 | US5640024 Compression-type power semiconductor device |
| 06/17/1997 | US5640023 Spacer-type thin-film polysilicon transistor for low-power memory devices |
| 06/17/1997 | US5640022 Quantum effect device |
| 06/17/1997 | US5639698 Low temperature crystallization of amorphous silicon film |
| 06/17/1997 | US5639688 Method of making integrated circuit structure with narrow line widths |
| 06/17/1997 | US5639679 Accuracy |
| 06/17/1997 | US5639678 Miniaturized transistor |
| 06/17/1997 | US5639677 Gold coating on rear surface of substrate to prevent parasitic carriers from being introduced into channel layer by superlattice layer during operation |
| 06/17/1997 | US5639676 Trenched DMOS transistor fabrication having thick termination region oxide |
| 06/17/1997 | US5639344 Etching material and etching process |
| 06/17/1997 | US5639299 Surface roughness; light emitting diodes |
| 06/12/1997 | WO1997021249A2 Field effect transistor |
| 06/12/1997 | WO1997021248A1 Gate turn-off thyristor and power converter device using the same |
| 06/12/1997 | WO1997021226A1 Power supply independent current source for flash eprom erasure |
| 06/12/1997 | WO1997015948A3 Electronic devices comprising thin-film circuitry |
| 06/12/1997 | WO1997015066A3 Process for producing a speed of rotation coriolis sensor |
| 06/12/1997 | WO1997011483A3 Method of producing very small structural widths on a semiconductor substrate |
| 06/12/1997 | DE19624278A1 Silicon On Insulator structure with single crystal semiconductor substrate |
| 06/12/1997 | DE19622431A1 Semiconductor memory device with static memory cell, e.g. SRAM |
| 06/12/1997 | DE19545556A1 Feldeffekttransistor Field-effect transistor |
| 06/11/1997 | EP0778664A1 Alternating current generator for motor vehicles |
| 06/11/1997 | EP0778663A1 Alternating current generator for motor vehicles |
| 06/11/1997 | EP0778662A1 Alternating current generator for motor vehicles |
| 06/11/1997 | EP0778623A2 PMOS memory cell with hot electron injection programming and tunnelling erasing |
| 06/11/1997 | EP0778622A2 Heterojunction bipolar transistor |
| 06/11/1997 | EP0778620A2 Vertical MOS type semiconductor device |
| 06/11/1997 | EP0778615A1 Bipolar transistor and method of fabricating the same |
| 06/11/1997 | EP0778614A2 Process for forming integrated capacitors |
| 06/11/1997 | EP0778581A2 Nonvolatile memory device |
| 06/11/1997 | EP0777910A1 Process for manufacture of mos gated device with reduced mask count |
| 06/11/1997 | EP0777902A2 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| 06/11/1997 | EP0513185B1 Mosfet structure having reduced gate capacitance and method of forming same |
| 06/11/1997 | CN1151526A Semiconductor-type accelerometer and method for evaluating properties of sensor element formed |
| 06/11/1997 | CN1035142C Semiconductor unit |
| 06/10/1997 | US5638327 Flash-EEPROM memory array and method for biasing the same |
| 06/10/1997 | US5638319 Non-volatile random access memory and fabrication method thereof |
| 06/10/1997 | US5637924 Semiconductor device having planarized wiring with good thermal resistance |
| 06/10/1997 | US5637911 Semiconductor device |
| 06/10/1997 | US5637910 Multi-emitter or a multi-base transistor |
| 06/10/1997 | US5637909 Semiconductor device and method of manufacturing the same |
| 06/10/1997 | US5637908 Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction |
| 06/10/1997 | US5637907 Three dimensional semiconductor circuit structure with optical interconnection |
| 06/10/1997 | US5637905 High temperature, pressure and displacement microsensor |
| 06/10/1997 | US5637900 Latchup-free fully-protected CMOS on-chip ESD protection circuit |
| 06/10/1997 | US5637899 Semiconductor device |
| 06/10/1997 | US5637898 Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
| 06/10/1997 | US5637897 Nonvolatile semiconductor memory device with dual insulation layers between adjacent gate structures |
| 06/10/1997 | US5637895 Non-volatile semiconductor memory device |
| 06/10/1997 | US5637894 Solid state image sensor device with single-layered transfer electrodes |
| 06/10/1997 | US5637891 Charge coupled device having different insulators |
| 06/10/1997 | US5637889 Composite power transistor structures using semiconductor materials with different bandgaps |
| 06/10/1997 | US5637888 Insulated gate thyristor |
| 06/10/1997 | US5637887 Silicon controller rectifier (SCR) with capacitive trigger |
| 06/10/1997 | US5637886 Thyristor with improved dv/dt resistance |
| 06/10/1997 | US5637884 Thin film transistor having increased on current |
| 06/10/1997 | US5637801 Semiconductor diaphragm pressure sensor with grooves to absorb adhesive |
| 06/10/1997 | US5637526 Method of making a capacitor in a semiconductor device |
| 06/10/1997 | US5637520 Process for fabricating integrated devices including flash-EEPROM memories and transistors |
| 06/10/1997 | US5637519 Method of fabricating a lightly doped drain thin-film transistor |
| 06/10/1997 | US5637518 Method of making a field effect transistor having an elevated source and an elevated drain |
| 06/10/1997 | US5637515 Method of making thin film transistor using lateral crystallization |
| 06/10/1997 | US5637514 Method of forming a field effect transistor |
| 06/10/1997 | US5637513 Fabrication method of semiconductor device with SOI structure |
| 06/10/1997 | US5637512 Forming silicon film on substrate, heating, cleaning by immersion in solution, forming silicon oxide film by electronic cyclotron resonance plasma vapor deposition |
| 06/05/1997 | WO1997020353A1 Low resistance contact semiconductor diode |
| 06/05/1997 | WO1997020352A1 Mos transistor |
| 06/05/1997 | WO1997020351A1 Multidirectional transfer charge-coupled device |
| 06/05/1997 | WO1997020350A2 Semiconductor device with schottky contact and a process for the production thereof |
| 06/05/1997 | WO1997020338A1 Esd-protected thin film capacitor structures |
| 06/05/1997 | WO1997020336A2 Process for producing an integrated circuit device with at least one mos transistor |
| 06/05/1997 | WO1997020078A1 Methods for generating polynucleotides having desired characteristics by iterative selection and recombination |
| 06/05/1997 | WO1997017720A3 Circuit structure having a flip-mounted matrix of devices |
| 06/05/1997 | DE19649686A1 High voltage MOSFET structure for smart power IC |
| 06/05/1997 | DE19641840A1 Treiberschaltung für Hochleistungs-Halbleiterbauteile mit MOS-Gatesteuerung Driving circuit for high-power semiconductor components with a MOS gated |
| 06/05/1997 | DE19641838A1 Abschlußstruktur für Halbleiterbauteile sowie Verfahren zur Herstellung derartiger Abschlußstrukturen Termination structure for semiconductor devices as well as methods for preparing such termination structures |
| 06/05/1997 | DE19629774A1 Semiconductor device |
| 06/05/1997 | DE19544659A1 Semiconductor device with Zener diode |
| 06/05/1997 | DE19544326A1 Halbleiterbauelement mit Schottkykontakt A semiconductor device comprising Schottky |
| 06/04/1997 | EP0777269A2 MOS transistor and fabrication process therefor |
| 06/04/1997 | EP0777268A2 Integrated circuit fabrication |
| 06/04/1997 | EP0776571A1 Method of operating a ccd imager, and ccd imager suitable for the implementation of such a method |
| 06/04/1997 | EP0776527A1 Electrostatic discharge protection circuit |
| 06/04/1997 | EP0776526A1 Active matrix electroluminescent display pixel and method of fabricating same |
| 06/04/1997 | EP0776475A1 Transducer |
| 06/04/1997 | CN1035090C Switching transistor circuit arrangement |
| 06/03/1997 | US5636160 Nonvolatile semiconductor memory having a stress relaxing voltage applied to erase gate during data write |
| 06/03/1997 | US5635823 Current detector circuit |
| 06/03/1997 | US5635765 Semiconductors having first and second refractory metal silicide layers which have differing stoichiometries |
| 06/03/1997 | US5635759 Semiconductor device for mounting high-frequency element |
| 06/03/1997 | US5635757 Power semiconductor module and circuit arrangement comprising at least two power semiconductor switch modules |
| 06/03/1997 | US5635752 Semiconductor device having source and drain regions which include horizontally extending secondary defect layers |
| 06/03/1997 | US5635749 High performance field effect transistor with lai region |
| 06/03/1997 | US5635747 Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage |