Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1996
12/10/1996US5583348 Method for making a schottky diode that is compatible with high performance transistor structures
12/10/1996US5583347 For an electro-optical device
12/10/1996US5583335 Method of making an eye tracking system having an active matrix display
12/10/1996US5583296 Layered diaphragm pressure sensor with connecting channel
12/10/1996US5583075 Method for producing a semiconductor device with a particular source/drain and gate structure
12/10/1996US5583071 Image sensor with improved output region for superior charge transfer characteristics
12/10/1996US5583068 Process for forming a capacitor having a metal-oxide dielectric
12/10/1996US5583067 Inverse T-gate semiconductor device with self-aligned punchthrough stops and method of fabrication
12/10/1996US5583064 Semiconductor device and process for formation thereof
12/10/1996US5583061 PMOS transistors with different breakdown voltages formed in the same substrate
12/10/1996US5583060 Method for manufacturing field effect controlled semiconductor components
12/10/1996US5583059 Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
12/10/1996US5582880 Supplying silicon containing gas into film forming space, applying high frequency power between electrodes at specified distance, discharging under specified pressure to form silicon-containing film by plasma chemical vapor deposition
12/10/1996US5582640 Semiconductor device and its fabricating method
12/08/1996CA2177219A1 Method and apparatus for fabricating self-assembling microstructures
12/08/1996CA2176052A1 Transducer having a resonating silicon beam and method for forming same
12/08/1996CA2176051A1 Transducer having a silicon diaphragm for forming same
12/05/1996WO1996038862A1 Bidirectional blocking accumulation-mode trench power mosfet
12/05/1996WO1996030938A3 Process for fabricating layered superlattice materials and making electronic devices including same
12/05/1996WO1996028806A3 Electronic devices comprising an array
12/05/1996DE19619921A1 Mfg. semiconductor device having capped element
12/04/1996EP0746042A2 Bidirectional blocking trench power MOSFET
12/04/1996EP0746041A2 Channel region of MOSFET and method for producing the same
12/04/1996EP0746040A1 Improved IGBT device
12/04/1996EP0746039A1 PNP type bipolar transistor
12/04/1996EP0746038A2 Isolated vertical PNP transistor and a process for fabricating the same
12/04/1996EP0746037A2 N-type HIGFET and method
12/04/1996EP0746036A2 Higfet and method
12/04/1996EP0746035A2 Quarternary collector InA1As-InGaA1As heterojunction bipolar transistor
12/04/1996EP0746033A2 Improvements in or relating to semiconductor processing
12/04/1996EP0746031A2 Silicon on insulator type semiconductor device
12/04/1996EP0746030A2 Trench-gated power MOSFET with protective diode
12/04/1996EP0746029A2 Voltage-clamped power accumulation-mode MOSFET
12/04/1996EP0746023A2 Multichip press-contact type semiconductor device
12/04/1996EP0746021A2 Compression bonded type semiconductor element and manufacturing method for the same
12/04/1996EP0746019A2 A silicide process for sub-micron silicon and polysilicon lines
12/04/1996EP0746018A2 Process for forming a refractory metal silicide film having a uniform thickness
12/04/1996EP0746015A2 Silicon etching method
12/04/1996EP0746012A2 Improvements relating to silicide formation
12/04/1996EP0745997A2 Charge coupled device with high charge transfer efficiency
12/04/1996EP0745995A1 Nonvolatile, in particular flash-EEPROM, memory device
12/04/1996EP0745886A2 An active matrix liquid crystal device and manufacturing method
12/04/1996EP0745885A2 An integrated dark matrix for an active matrix liquid crystal display and manufacturing method
12/04/1996EP0745704A2 Process for preparing an epitaxially coated semiconducting wafer
12/04/1996EP0745275A1 Diode device to protect metal-oxide-metal capacitors
12/04/1996EP0745273A1 Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
12/04/1996EP0745272A1 High-voltage cmos transistors for a standard cmos process
12/04/1996EP0478799B1 Semiconductor device having ferroelectric material and method of producing the same
12/04/1996CN1137329A Method for fabricating self-assembling microstructures
12/04/1996CN1137170A Method of manufacturing semiconductor device
12/04/1996CN1137169A Ultra-small semiconductor devices and methods of fabricating and contacting
12/03/1996US5581571 Semiconductor devices and methods
12/03/1996US5581455 Capacitive charge pump, BiCMOS circuit for low supply voltage and method therefor
12/03/1996US5581385 Single crystal silicon arrayed devices for projection displays
12/03/1996US5581226 High pressure sensor structure and method
12/03/1996US5581115 Bipolar transistors using isolated selective doping to improve performance characteristics
12/03/1996US5581112 For an integrated circuit
12/03/1996US5581107 Nonvolatile semiconductor memory that eases the dielectric strength requirements
12/03/1996US5581106 Semiconductor memory cell having information storage transistor and switching transistor
12/03/1996US5581104 Semiconductor integrated circuit
12/03/1996US5581103 Semiconductor integrated circuit device with input-protecting circuit
12/03/1996US5581102 Transistor and method for manufacturing the same
12/03/1996US5581101 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures
12/03/1996US5581100 Trench depletion MOSFET
12/03/1996US5581096 Integrated semiconductor device having a thyristor
12/03/1996US5581095 Bidirectional shockley diode having overlapping emitter regions
12/03/1996US5581092 Gate insulated semiconductor device
12/03/1996US5580831 Sawcut method of forming alignment marks on two faces of a substrate
12/03/1996US5580814 Forming contact window to ferroelectric dielectric layer prior to depositing top electrode
12/03/1996US5580810 Method of making a semiconductor memory device
12/03/1996US5580807 Method of fabricating a high voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped grain
12/03/1996US5580804 Method for fabricating true LDD devices in a MOS technology
12/03/1996US5580803 Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate
12/03/1996US5580802 Silicon-on-insulator gate-all-around mosfet fabrication methods
12/03/1996US5580801 Method for processing a thin film using an energy beam
12/03/1996US5580800 Method of patterning aluminum containing group IIIb Element
12/03/1996US5580799 Method of manufacturing transistor with channel implant
12/03/1996US5580797 Method of making SOI Transistor
12/03/1996US5580796 Method for fabricating thin film transistor matrix device
12/03/1996US5580792 Low temperature annealing to crystalize amorphous silicon semiconductor coated with catalyst, etching to partially remove catalyst, forming gate insulating and gate electrode layers for thin film transistor
12/03/1996US5580687 Contact stepper printed lithography method
11/1996
11/28/1996WO1996037814A1 Constant current source with an eeprom cell
11/28/1996WO1996037784A1 Single crystal silicon sensor with high aspect ratio and curvilinear structures and associated method
11/28/1996DE19620889A1 Semiconductor FET with indium arsenide channel layer
11/28/1996DE19603450A1 Semiconductor component with stepped region on substrate
11/28/1996DE19547783C1 Semiconductor sensor, e.g. for pressure measurement etc.
11/28/1996DE19526011C1 Prodn. of sub-lithographic etching mask
11/28/1996DE19518728A1 Konstantstromquelle mit einer EEPROM-Zelle Constant current source to an EEPROM cell
11/27/1996EP0744834A2 Semiconductor circuit, method of driving the same, and semiconductor device
11/27/1996EP0744777A1 Nonlinear element and bistable memory device
11/27/1996EP0744776A2 Amorphous silicon thin film transistor and method preparing same
11/27/1996EP0744775A2 Microcrystal silicon thin film transistor
11/27/1996EP0744774A2 Field effect transistor and method for producing same
11/27/1996EP0744773A2 Semiconductor device having a plasma-processed layer and the method of manufacturing the same
11/27/1996EP0744770A2 Semiconductor apparatus
11/27/1996EP0744769A2 MOS gate type power transistors
11/27/1996EP0744754A2 Method and apparatus for hot carrier injection
11/27/1996EP0744603A1 Linear capacitive sensor by fixing the center of a membrane
11/27/1996EP0744098A1 A protected switch
11/27/1996EP0744085A1 Electromagnetic radiation imaging device using thin film transistors
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