Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/1997
04/16/1997EP0768714A1 Construction method for power devices with deep edge ring
04/16/1997EP0768707A2 Molecular beam epitaxy process with growing layer thickness control
04/16/1997EP0768673A2 Improvements in or relating to integrated circuits
04/16/1997EP0767899A1 Apparatus for mounting an absolute pressure sensor
04/16/1997EP0739542A4 Input/output transistors with optimized esd protection
04/16/1997CN1147695A Semiconductor integrated circuit device and its producing method
04/16/1997CN1147691A Improvement in formation of gate electrode
04/16/1997CN1147674A Semiconductor memory device and method of manufacturing the same
04/16/1997CN1147636A Gas sensor for detecting nitrogen dioxide and its prodn technology
04/15/1997US5621689 Nonvolatile semiconductor memory device having controlled charge pump load
04/15/1997US5621683 Semiconductor memory with non-volatile memory transistor
04/15/1997US5621682 Memory system
04/15/1997US5621681 Ferroelectric film used as gate insulating film; matched well with silicon in terms of lattice constant and thermal expansion coefficient
04/15/1997US5621601 Over-current protection apparatus for transistor
04/15/1997US5621556 Method of manufacturing active matrix LCD using five masks
04/15/1997US5621336 Neuron circuit
04/15/1997US5621239 Semiconductor device
04/15/1997US5621237 Semiconductor device
04/15/1997US5621236 Gate-to-drain overlapped MOS transistor fabrication process and structure thereby
04/15/1997US5621234 Vertical semiconductor device with breakdown voltage improvement region
04/15/1997US5621232 Semiconductor device including a local interconnection between an interconnection layer and an adjoining impurity region
04/15/1997US5621230 Low capacitance floating diffusion structure for a solid state image sensor
04/15/1997US5621229 Semiconductor device and control method
04/15/1997US5621228 Heterojunction field effect transistor with non-alloy ohmic contact electrodes
04/15/1997US5621226 Metal-insulator semiconductor gate controlled thyristor
04/15/1997US5621224 Semiconductor device including a silicon film having an irregular surface
04/15/1997US5621222 Superlattice semiconductor device
04/15/1997US5620933 Micromachined relay and method of forming the relay
04/15/1997US5620924 Method of preventing deterioration of film quality of transparent conductive film
04/15/1997US5620919 Methods for fabricating integrated circuits including openings to transistor regions
04/15/1997US5620914 Manufacturing method of semiconductor device
04/15/1997US5620913 Method of making a flash memory cell
04/15/1997US5620912 Method of manufacturing a semiconductor device using a spacer
04/15/1997US5620911 Method for fabricating a metal field effect transistor having a recessed gate
04/15/1997US5620910 Forming active layer on substrate, irradiating laser into active layer in atmosphere including oxygen, nitrogen halogen, forming film by vapor deposition
04/15/1997US5620909 Method of depositing thin passivating film on microminiature semiconductor devices
04/15/1997US5620907 Method for making a heterojunction bipolar transistor
04/15/1997US5620905 Method of fabricating thin film semiconductor integrated circuit
04/10/1997WO1997013279A1 Trench-gated mosfet including integral temperature detection diode
04/10/1997WO1997013278A1 Semiconductor diode with suppression of auger generation processes
04/10/1997WO1997013277A1 Mos transistor with high output voltage endurance
04/10/1997WO1997013273A1 Formation of source/drain from doped glass
04/10/1997DE19637722A1 Field effect transistor e.g. high power FET
04/10/1997DE19637105A1 Field effect transistor structure with insulated gate for VLSI integrated circuit
04/09/1997EP0767501A1 Semiconductor pressure sensor and production method thereof
04/09/1997EP0767500A2 Power semiconductor device with lattice defects
04/09/1997EP0767499A2 Bipolar transistor with a reduced collector series resistance and method for fabricating the same
04/09/1997EP0767498A1 Semiconductor memory device and method of manufacturing the same
04/09/1997EP0767489A2 Nonvolatile semiconductor memory, and method of manufacturing the same
04/09/1997EP0766909A1 Vertical interconnect process for silicon segments
04/09/1997EP0766870A2 Method of manufacturing a progammable semiconductor device in the form of an anti-fuse
04/09/1997EP0673311A4 C-axis perovskite thin films grown on silicon dioxide.
04/09/1997CN1147314A Low voltage one transistor flash EEPROM cell using Fowler-Nordheim Programming and erase
04/09/1997CN1147155A Transistor structure of semiconductor device
04/09/1997CN1147154A Trench DMOS semiconductor device and method of fabricating the same
04/09/1997CN1147153A Method and apparatus for fabricating self-assembling microstructures
04/08/1997US5619222 Liquid crystal display device having static electricity removing circuits
04/08/1997US5619069 Bipolar device and production thereof
04/08/1997US5619064 III-V semiconductor gate structure and method of manufacture
04/08/1997US5619057 Complex film overlying a substrate with defined work function
04/08/1997US5619054 CMOS transistor and isolated back gate electrodes on an SOI substrate
04/08/1997US5619052 Interpoly dielectric structure in EEPROM device
04/08/1997US5619051 Semiconductor nonvolatile memory cell
04/08/1997US5619050 Semiconductor acceleration sensor with beam structure
04/08/1997US5619047 Semiconductor diode in which electrons are injected into a reverse current
04/08/1997US5619046 Method of manufacturing a measuring device
04/08/1997US5619045 Thin film transistor
04/08/1997US5619044 Comprising crystallizing catalyst promoter
04/08/1997US5618755 Method of manufacturing a polycide electrode
04/08/1997US5618745 Method of manufacturing a one transistor one-capacitor memory cell structure with a trench containing a conductor penetrating a buried insulating film
04/08/1997US5618743 MOS transistor having adjusted threshold voltage formed along with other transistors
04/08/1997US5618741 Manufacture of electronic devices having thin-film transistors
04/08/1997US5618345 Method of producing self-supporting thin film of silicon single crystal
04/03/1997WO1997012403A1 Diode
04/03/1997WO1997012402A1 Semiconductor charge potential wells with integrated diffusions
04/03/1997WO1997012249A1 Monolithic acceleration transducer
04/03/1997WO1997012030A1 Apparatus and methods for active programmable matrix devices
04/03/1997WO1996018194A3 Semiconductor memory with non-volatile memory transistor
04/03/1997DE19640443A1 Semiconductor component, e.g. power MOSFET
04/03/1997DE19639697A1 Semiconductor device having no leakage current
04/03/1997DE19639035A1 Semiconductor component, e.g. power MOSFET or IGBT
04/03/1997DE19634178A1 Bipolar semiconductor component manufacturing
04/03/1997DE19548529C1 Neural network MOS transistor mfr. based on CMOS process
04/03/1997DE19536022A1 Rapid-switching diode for power converter
04/03/1997DE19534778C1 Verfahren zum Erzeugen der Sourcebereiche eines Flash-EEPROM-Speicherzellenfeldes A method for producing source regions of a flash EEPROM memory cell array,
04/03/1997CA2233238A1 Apparatus and methods for active programmable matrix devices
04/02/1997EP0766324A1 Semiconductor device and method of fabrication
04/02/1997EP0766318A1 Semiconductor device having planar type high withstand voltage vertical devices, and production method thereof
04/02/1997EP0766316A1 Improvements in or relating to non-volatile memory arrays
04/02/1997EP0766309A2 Field effect transistor which multi-level metallisation related to integrated circuits
04/02/1997EP0766306A1 Process for manufacturing a plurality of microelectronic circuits in SOI
04/02/1997EP0766305A2 Method of producing BiCMOS circuits on SOI
04/02/1997EP0766301A2 Method of forming self-aligned contact holes using a sacrificial polysilicon layer
04/02/1997EP0766296A2 Method of manufacturing a thin film transistor
04/02/1997EP0766295A1 Process for forming a high frequency bipolar transistor structure comprising an oblique implantation step
04/02/1997EP0766294A2 Thin film semiconducteur devices and methods of manufacturing the same
04/02/1997EP0766292A2 Method for producing ferroelectric film element, and ferroelectric film element and ferroelectric memory element produced by the method
04/02/1997EP0766291A1 Integrated circuit insulator and method
04/02/1997EP0766119A1 Transmission type liquid crystal display apparatus and method for producing the same
04/02/1997EP0766118A2 Active-matrix type liquid crystal display device and method of compensating for defective pixel