| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 07/29/1997 | US5652454 Semiconductor device on an SOI substrate |
| 07/29/1997 | US5652453 Semiconductor device with a semiconductor layer formed on an insulating film and manufacturing method thereof |
| 07/29/1997 | US5652452 Semiconductor device with pluralities of gate electrodes |
| 07/29/1997 | US5652451 Recessed gate field effect transistor |
| 07/29/1997 | US5652450 Nonvolatile semiconductor storage device |
| 07/29/1997 | US5652449 Semiconductor device with an insulating film separating conductive layers and method of maufacturing semiconductor device |
| 07/29/1997 | US5652446 Semiconductor memory device with improved capacitor |
| 07/29/1997 | US5652445 Hybrid hall effect device and method of operation |
| 07/29/1997 | US5652444 Structure and method for making FETs and HEMTs insensitive to hydrogen gas |
| 07/29/1997 | US5652442 Charge coupled device and imaging device having a charge coupled device |
| 07/29/1997 | US5652440 GaAs-InGaAs high electron mobility transistor |
| 07/29/1997 | US5652439 Fast electrical complete turn-off optical device |
| 07/29/1997 | US5652437 Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer |
| 07/29/1997 | US5652434 Gallium nitride-based III-V group compound semiconductor |
| 07/29/1997 | US5652179 Method of fabricating sub-micron gate electrode by angle and direct evaporation |
| 07/29/1997 | US5652168 Method of forming a semiconductor device having a capacitor with improved element isolation and operation rate |
| 07/29/1997 | US5652161 Method of making split gate flash EEPROM cell |
| 07/29/1997 | US5652159 Thin film transistor having improved switching characteristic |
| 07/29/1997 | US5652158 Method for making thin film transistors for a liquid crystal display |
| 07/29/1997 | US5652156 Mismatched silicon grain boundaries to prevent diffusion |
| 07/29/1997 | US5651857 Semiconductors, high density integration, photoresists |
| 07/24/1997 | WO1997026678A2 A SEMICONDUCTOR DEVICE WITH A LOW RESISTANCE OHMIC CONTACT BETWEEN A METAL LAYER AND A SiC-LAYER |
| 07/24/1997 | WO1997026676A1 Semiconductor devices, and methods for same |
| 07/24/1997 | DE19702110A1 Silicon carbide semiconductor device especially power MOSFET |
| 07/24/1997 | DE19630341A1 Semiconductor device e.g. IGBT for high voltage inverter |
| 07/24/1997 | DE19617166C1 Lightly-doped-drain metal oxide semiconductor field effect transistor |
| 07/24/1997 | CA2243170A1 Semiconductor devices, and methods for same |
| 07/23/1997 | EP0785627A2 Semiconductor switching apparatus and method of controlling a semiconductor switching element |
| 07/23/1997 | EP0785625A2 Protection arrangement for a switching device |
| 07/23/1997 | EP0785582A2 Trench gated MOS-controlled thyristor |
| 07/23/1997 | EP0785578A2 Circuit comprising complementary thin film transistors |
| 07/23/1997 | EP0785577A1 Telephone line interface protection component |
| 07/23/1997 | EP0785573A2 Method of forming raised source/drain regions in an integrated circuit |
| 07/23/1997 | EP0785437A1 Semiconductor device having a movable gate |
| 07/23/1997 | EP0784869A1 Emitter switched thyristor |
| 07/23/1997 | EP0784868A1 Ccd charge splitter |
| 07/23/1997 | EP0784867A1 Three-dimensional non-volatile memory |
| 07/23/1997 | EP0784866A1 Fixed value storage cell arrangement and method of producing the same |
| 07/23/1997 | EP0616728B1 Scr protection structure and circuit with reduced trigger voltage |
| 07/23/1997 | CN1155166A Thin-film semiconductor device |
| 07/23/1997 | CN1155160A Method for making of self alignment silicide structural semiconductor device |
| 07/23/1997 | CN1155159A Gate electrode and forming method thereof |
| 07/23/1997 | CN1155097A Camara with internal supporting structure for preventing |
| 07/22/1997 | US5650962 Semiconductor nonvolatile memory device |
| 07/22/1997 | US5650960 Polysilicon programming memory cell |
| 07/22/1997 | US5650664 Connector effecting an improved electrical connection and a semiconductor apparatus using such connector |
| 07/22/1997 | US5650658 Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
| 07/22/1997 | US5650655 Integrated circuitry having electrical interconnects |
| 07/22/1997 | US5650654 MOSFET device having controlled parasitic isolation threshold voltage |
| 07/22/1997 | US5650653 Microelectronic integrated circuit including triangular CMOS "nand" gate device |
| 07/22/1997 | US5650650 High speed semiconductor device with a metallic substrate |
| 07/22/1997 | US5650649 Floating gate type field effect transistor having control gate applied with pulses for evacuating carriers from p-type semiconductor floating gate |
| 07/22/1997 | US5650646 Barriers for thermodynamic stability; semiconductor circuitry; capacitors; transistors; pixels for light detectors; electrooptic applications |
| 07/22/1997 | US5650645 Field effect transistor having capacitor between source and drain electrodes |
| 07/22/1997 | US5650642 Field effect semiconductor device |
| 07/22/1997 | US5650638 Semiconductor device having a passivation layer |
| 07/22/1997 | US5650637 Active matrix assembly |
| 07/22/1997 | US5650636 Active matrix display and electrooptical device |
| 07/22/1997 | US5650634 Interchannel nonequilibrium confined-phonon exchange device |
| 07/22/1997 | US5650358 Transformed microbe or plant cell, gene expression |
| 07/22/1997 | US5650350 Semiconductor processing method of forming a static random access memory cell and static random access memory cell |
| 07/22/1997 | US5650347 Method of manufacturing a lightly doped drain MOS transistor |
| 07/22/1997 | US5650345 Method of making self-aligned stacked gate EEPROM with improved coupling ratio |
| 07/22/1997 | US5650344 Method of making non-uniformly nitrided gate oxide |
| 07/22/1997 | US5650343 Self-aligned implant energy modulation for shallow source drain extension formation |
| 07/22/1997 | US5650342 Method of making a field effect transistor with a T shaped polysilicon gate electrode |
| 07/22/1997 | US5650340 Doping the substrate to form a pocket region with increased concentration of dopant located below trasnsitors drain and source region |
| 07/22/1997 | US5650339 Method of manufacturing thin film transistor |
| 07/22/1997 | US5650335 Ion implantation to correct for variations in carrier concentration determined by measuring electrical properties of formed field effect transistor (fet) |
| 07/17/1997 | WO1997025746A1 Hemt double hetero structure |
| 07/17/1997 | WO1997025745A1 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same |
| 07/17/1997 | WO1997025744A1 Highly-integrated semiconductor memory and process for preparation of the memory |
| 07/17/1997 | WO1997025738A2 A water vapor annealing process |
| 07/17/1997 | DE19600116A1 Doppelheterostruktur-HEMT Double heterostructure HEMT |
| 07/16/1997 | EP0784347A2 Semiconductor device having capacitor |
| 07/16/1997 | EP0784346A2 Charge transfer device and solid-state imaging apparatus using the same device |
| 07/16/1997 | EP0784340A1 Method for contacting differently doped regions in a semicondutor device, and semiconductor device |
| 07/16/1997 | EP0783767A1 Bipolar transistor for use in linear amplifiers |
| 07/16/1997 | EP0783766A2 Power semiconductor devices |
| 07/16/1997 | EP0783670A1 Electromechanical transducer |
| 07/16/1997 | EP0584236B1 Blue-green laser diode |
| 07/16/1997 | EP0584230B1 Oxides and nitrides of metastabile group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof |
| 07/16/1997 | CN1154570A MOS field effect transistor with improved pocket regions for suppressing any short channel effects and method for fabricating the same |
| 07/16/1997 | CN1154488A Electric device having non-light emitting type display |
| 07/15/1997 | US5648792 Liquid crystal display device having a thin film |
| 07/15/1997 | US5648685 For an electro-optical device |
| 07/15/1997 | US5648675 Semiconductor device with heterojunction |
| 07/15/1997 | US5648673 Semiconductor device having metal silicide film on impurity diffused layer or conductive layer |
| 07/15/1997 | US5648671 Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile |
| 07/15/1997 | US5648670 Trench MOS-gated device with a minimum number of masks |
| 07/15/1997 | US5648669 High speed flash memory cell structure and method |
| 07/15/1997 | US5648668 High breakdown voltage field effect transistor |
| 07/15/1997 | US5648666 Double-epitaxy heterojunction bipolar transistors for high speed performance |
| 07/15/1997 | US5648665 Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor |
| 07/15/1997 | US5648664 BIFET vacuum tube replacement structure |
| 07/15/1997 | US5648663 Image reading device |
| 07/15/1997 | US5648662 Electro-optical device with amorphous and crystalline shift registers |
| 07/15/1997 | US5648615 Pressure sensor providing improved connection to a circuit board |
| 07/15/1997 | US5648300 Method of manufacturing cantilever drive mechanism and probe drive mechanism |
| 07/15/1997 | US5648297 Long-wavelength PTSI infrared detectors and method of fabrication thereof |