| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 06/03/1997 | US5635746 Silicided layer partly constituted by high resistivity layer with nitrogen or oxygen ions introduced so that a high resistivity silicided layer part and a low resistivity silicided layer part coexist |
| 06/03/1997 | US5635744 Semiconductor memory and semiconductor device having SOI structure |
| 06/03/1997 | US5635743 Semiconductor device having an increased withstand voltage against an inverse surge voltage |
| 06/03/1997 | US5635742 Lateral double-diffused mosfet |
| 06/03/1997 | US5635736 MOS gate type semiconductor device |
| 06/03/1997 | US5635735 Field effect transistor with an improved Schottky gate structure |
| 06/03/1997 | US5635734 Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same |
| 06/03/1997 | US5635732 Silicon carbide LOCOS vertical MOSFET device |
| 06/03/1997 | US5635731 SRAM cell with no PN junction between driver and load transistors and method of manufacturing the same |
| 06/03/1997 | US5635424 High-density bond pad layout arrangements for semiconductor dies, and connecting to the bond pads |
| 06/03/1997 | US5635420 Forming dielectric, adhesive conductive layers and electrode on semiconductor substrate, covering with thin ferroelectric film and forming islands of metal insertion materials on crystal grain boundaries of the film |
| 06/03/1997 | US5635419 Porous silicon trench and capacitor structures |
| 06/03/1997 | US5635417 Method of making a read only memory device |
| 06/03/1997 | US5635416 Manufacturing method to fabricate a semiconductor integrated circuit with on-chip non-volatile memories |
| 06/03/1997 | US5635413 Method of manufacturing field effect transistor |
| 06/03/1997 | US5635412 Doping silicon carbide substrate surrounding semiconductor feature with argon to amorphize substrate surface without annealing |
| 06/03/1997 | US5635411 Method of making semiconductor apparatus |
| 05/29/1997 | WO1997019516A1 A clocked high voltage switch |
| 05/29/1997 | WO1997019472A1 Contoured nonvolatile memory cell |
| 05/29/1997 | WO1997019468A1 Semiconductor storage device and process for manufacturing the same |
| 05/29/1997 | WO1997019465A1 Method in the manufacturing of a semiconductor device |
| 05/29/1997 | CA2237887A1 Method in the manufacturing of a semiconductor device |
| 05/29/1997 | CA2209295A1 A clocked high voltage switch |
| 05/28/1997 | EP0776092A2 Semiconductor device |
| 05/28/1997 | EP0776049A1 PMOS single-poly non-volatile memory structure |
| 05/28/1997 | EP0776048A2 MOS gated device base region with high breakdown resistance |
| 05/28/1997 | EP0776046A1 SOI CMOS logic circuit with transfer gates |
| 05/28/1997 | EP0776045A2 Semiconductor memory device and method for fabricating the same |
| 05/28/1997 | EP0776044A2 Memory cell array and method of producing the same |
| 05/28/1997 | EP0776034A2 Method of manufacturing a CMOS |
| 05/28/1997 | EP0776028A2 Process for reducing the carrier charge concentration for lowering the storage charge in semiconductor devices through two implantation steps |
| 05/28/1997 | EP0775931A2 Method for manufacturing liquid crystal display |
| 05/28/1997 | EP0775371A1 COMPOUNDS AND INFRARED DEVICES INCLUDING In 1-x?Tl x?Q, WHERE Q IS As 1-y?P y? AND 0 y 1 |
| 05/28/1997 | EP0775367A1 Semiconductor device with integrated rc network and schottky diode |
| 05/28/1997 | EP0775304A1 Method of producing cavity structures |
| 05/28/1997 | EP0764335A4 Electrode structure and method for anodically-bonded capacitive sensors |
| 05/28/1997 | EP0667060B1 Electronic component |
| 05/28/1997 | EP0553207B1 Fast turn-off thyristor structure |
| 05/28/1997 | CN2255100Y Power device with insulated erection space |
| 05/28/1997 | CN1150866A Semiconductor device and method of production thereof |
| 05/28/1997 | CN1150695A Method for manufacturing non-volatile memory cell |
| 05/27/1997 | US5634194 High density, three-dimensional, intercoupled circuit structure |
| 05/27/1997 | US5633821 Nonvolatile memory device |
| 05/27/1997 | US5633738 TFT substrate having scanning lines of metal films of columnar crystal grains |
| 05/27/1997 | US5633525 Lateral field effect transistor |
| 05/27/1997 | US5633524 Gate array semiconductor integrated circuit device |
| 05/27/1997 | US5633523 Complementary mis semiconductor device of dual gate structure having a silicide layer including a thinned portion |
| 05/27/1997 | US5633522 CMOS transistor with two-layer inverse-T tungsten gate |
| 05/27/1997 | US5633521 Enhancement of breakdown voltage in MOSFET semiconductor device |
| 05/27/1997 | US5633519 Non-volatile floating gate semiconductor device |
| 05/27/1997 | US5633518 In an integrated circuit |
| 05/27/1997 | US5633517 Semiconductor device constituting multi-stage power amplifier |
| 05/27/1997 | US5633516 Lattice-mismatched crystal structures and semiconductor device using the same |
| 05/27/1997 | US5633515 Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS |
| 05/27/1997 | US5633513 Diamond film field effect transistor |
| 05/27/1997 | US5633209 Method of forming a circuit membrane with a polysilicon film |
| 05/27/1997 | US5633184 Method of making semiconductor device with floating bate |
| 05/27/1997 | US5633183 FET having minimized parasitic gate capacitance |
| 05/27/1997 | US5633182 Method of manufacturing an image display device with reduced cell gap variation |
| 05/27/1997 | US5633179 Method of forming silicon/silicon-germanium heterojunction bipolar transistor |
| 05/27/1997 | US5633178 Method of making volatile memory cell with interface charge traps |
| 05/27/1997 | US5632957 Molecular biological diagnostic systems including electrodes |
| 05/27/1997 | US5632812 Diamond electronic device and process for producing the same |
| 05/22/1997 | WO1997018590A1 Varicap |
| 05/22/1997 | WO1997018588A1 Improved charge pumps using accumulation capacitors |
| 05/22/1997 | DE19647324A1 Laterally diffused MOS transistor device having reduced surface field |
| 05/22/1997 | DE19611045C1 Field effect transistor e.g. vertical MOS type |
| 05/22/1997 | DE19608906C1 Semiconductor component controlled by field effect esp. isolated gate bipolar transistor IGBT |
| 05/21/1997 | EP0774788A1 A PMOS flash memory cell capable of multi-level threshold voltage storage |
| 05/21/1997 | EP0774785A2 Electrostatic protection devices for protecting semiconductor integrated circuitry |
| 05/21/1997 | EP0774775A1 Method of fabricating semiconductor device and semiconductor device fabricated thereby |
| 05/21/1997 | EP0774167A1 A power semiconductor device |
| 05/21/1997 | EP0745275A4 Diode device to protect metal-oxide-metal capacitors |
| 05/21/1997 | CN1150337A Power semiconductor device |
| 05/21/1997 | CN1150336A Ceramic chip-type diode and manufacturing method thereof |
| 05/21/1997 | CN1150332A Semiconductor package apparatus and calculating method for parasitic capacitance created by formed substance |
| 05/21/1997 | CA2190416A1 Electrostatic protection devices for protecting semiconductor integrated circuitry |
| 05/20/1997 | US5631940 Thin film boot strap shift register |
| 05/20/1997 | US5631588 Power output stage with limited current absorption during high-impedance phase |
| 05/20/1997 | US5631495 High performance bipolar devices with plurality of base contact regions formed around the emitter layer |
| 05/20/1997 | US5631494 Power semiconductor device with low on-state voltage |
| 05/20/1997 | US5631491 Lateral semiconductor device and method of fixing potential of the same |
| 05/20/1997 | US5631488 Semiconductor integrated circuit device |
| 05/20/1997 | US5631487 Semiconductor device and motor driver circuit using the same |
| 05/20/1997 | US5631485 ESD and hot carrier resistant integrated circuit structure |
| 05/20/1997 | US5631484 Method of manufacturing a semiconductor device and termination structure |
| 05/20/1997 | US5631483 Power device integrated structure with low saturation voltage |
| 05/20/1997 | US5631479 Semiconductor device with laminated refractory metal schottky barrier gate electrode |
| 05/20/1997 | US5631477 Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor |
| 05/20/1997 | US5631476 MOS-technology power device chip and package assembly |
| 05/20/1997 | US5631475 Semiconductor light emitting element |
| 05/20/1997 | US5631473 Solid state array with supplemental dielectric layer crossover structure |
| 05/20/1997 | US5631428 Capacitive semiconductor pressure sensor |
| 05/20/1997 | US5631422 Sensor comprising multilayer substrate |
| 05/20/1997 | US5631198 Method for making a piezoresistive pressure sensor of semiconductor material employing anisotropic etching |
| 05/20/1997 | US5631187 Method for making semiconductor device having high energy sustaining capability and a temperature compensated sustaining voltage |
| 05/20/1997 | US5631181 Method of making a monolithic diode array |
| 05/20/1997 | US5631178 Method for forming a stable semiconductor device having an arsenic doped ROM portion |
| 05/20/1997 | US5631177 Process for manufacturing integrated circuit with power field effect transistors |
| 05/20/1997 | US5631176 Method of making combined JFET & MOS transistor device |