| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/20/1997 | US5631175 Etching, forming a spacing, doping |
| 05/20/1997 | US5631173 Method for forming collector up heterojunction bipolar transistor having insulative extrinsic emitter |
| 05/20/1997 | US5630905 Method of fabricating quantum bridges by selective etching of superlattice structures |
| 05/20/1997 | CA2080081C High electron mobility transistor having improved electron controllability |
| 05/20/1997 | CA2054498C Mis transistor |
| 05/15/1997 | WO1997017755A1 Push-pull power amplifier |
| 05/15/1997 | WO1997017732A1 Varactor with electrostatic barrier |
| 05/15/1997 | WO1997017731A1 Field effect transistor |
| 05/15/1997 | WO1997017730A1 Process for reducing defects in oxide layers on silicon carbide |
| 05/15/1997 | WO1997017726A1 Low collector resistance bipolar transistor compatible with high voltage integrated circuits |
| 05/15/1997 | WO1997017723A1 GaAs SUBSTRATE WITH COMPOSITIONALLY GRADED AlGaAsSb BUFFER FOR FABRICATION OF HIGH-INDIUM FETS |
| 05/15/1997 | WO1997017721A2 Method for making a circuit structure having a flip-mounted matrix of devices |
| 05/15/1997 | WO1997017720A2 Circuit structure having a flip-mounted matrix of devices |
| 05/15/1997 | DE19646927A1 Semiconductor planar junction manufacturing method for transistor in e.g. 1 Giga DRAM |
| 05/15/1997 | DE19641839A1 Halbleiter-Bauteil Semiconductor component |
| 05/15/1997 | DE19612838A1 Power semiconductor component, e.g. thyristor, for high voltage direct current use |
| 05/14/1997 | EP0773588A1 MOS integrated device comprising a gate protection diode |
| 05/14/1997 | EP0773585A2 Pressure-contact type semiconductor device |
| 05/14/1997 | EP0773584A2 Device having resin package and method of producing the same |
| 05/14/1997 | EP0773583A1 Method of manufacturing non-volatile semiconductor memory having erasing gate |
| 05/14/1997 | EP0773579A2 Semiconductor device with improved insulating/passivating layer |
| 05/14/1997 | EP0773443A1 Micro-machined accelerometer |
| 05/14/1997 | EP0772889A1 Semiconductor component with a high blocking capability edge termination |
| 05/14/1997 | CN1149931A Semiconductor pressure sensor and production method thereof |
| 05/14/1997 | CN1149763A Method for producing CMOS transistor |
| 05/13/1997 | US5629877 Process and device composite simulation system and simulation method |
| 05/13/1997 | US5629633 Method for predicting an output current of a transistor |
| 05/13/1997 | US5629558 Semiconductor diode integrated with bipolar/CMOS/DMOS technology |
| 05/13/1997 | US5629557 Semiconductor device capable of preventing humidity invasion |
| 05/13/1997 | US5629556 High speed bipolar transistor using a patterned etch stop and diffusion source |
| 05/13/1997 | US5629555 Semiconductor wafer to be subjected to a dose of ions |
| 05/13/1997 | US5629554 Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate |
| 05/13/1997 | US5629552 Stable high voltage semiconductor device structure |
| 05/13/1997 | US5629549 Magnetic spin transistor device, logic gate & method of operation |
| 05/13/1997 | US5629548 Semiconductor device with adjustable channel width |
| 05/13/1997 | US5629547 BICMOS process for counter doped collector |
| 05/13/1997 | US5629543 Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness |
| 05/13/1997 | US5629542 Compounded power MOSFET |
| 05/13/1997 | US5629541 Semiconductor memory device constituted by single transistor type non-volatile cells and facilitated for both electrical erasing and writing of data |
| 05/13/1997 | US5629539 Semiconductor memory device having cylindrical capacitors |
| 05/13/1997 | US5629538 Semiconductor sensor having a protective layer |
| 05/13/1997 | US5629536 High voltage current limiter and method for making |
| 05/13/1997 | US5629535 Bidirectional thyristor with MOS turn-on and turn-off capability |
| 05/13/1997 | US5629531 Microelectronics |
| 05/13/1997 | US5629530 Consists of tetrathiafulvalene as electron donor and tetracyanoquinodimethane as electron acceptor molecules, also contains silicon monooxide as surface passivation layer |
| 05/13/1997 | US5629231 Growing compound semiconductor laminate on semiconductor substrate, laminate including layer having nonstoichiometric composition, producing metal precipitate upon annealing, and having region of imperfect crystallinity; annealing |
| 05/13/1997 | US5629226 Method of manufacturing a buried plate type DRAM having a widened trench structure |
| 05/13/1997 | US5629222 Silicon nitride film is incorporated between the drain region and the floating gate |
| 05/13/1997 | US5629221 Process for suppressing boron penetration in BF2 + -implanted P+ -poly-Si gate using inductively-coupled nitrogen plasma |
| 05/13/1997 | US5629220 Method of manufacture of pull down transistor with drain off-set for low leakage SRAM's |
| 05/13/1997 | US5629219 Method for making a complementary bipolar transistor |
| 05/13/1997 | US5629218 Method for forming a field-effect transistor including a mask body and source/drain contacts |
| 05/13/1997 | US5629217 Method and apparatus for SOI transistor |
| 05/13/1997 | US5629215 Method of fabricating and contacting ultra-small three terminal semiconductor devices |
| 05/13/1997 | US5628100 Method of making an acceleration sensor |
| 05/09/1997 | WO1997016854A1 Semiconductor component with prismatic channel area |
| 05/09/1997 | WO1997016853A1 Insulated gate semiconductor devices with implants for improved ruggedness |
| 05/07/1997 | EP0772246A1 High capacity capacitor and corresponding manufacturing process |
| 05/07/1997 | EP0772245A2 Field effect semiconductor device and liquid crystal display apparatus |
| 05/07/1997 | EP0772244A1 MOS technology power device with low output resistance and low capacity and related manufacturing process |
| 05/07/1997 | EP0772243A1 Compound semiconductor device |
| 05/07/1997 | EP0772242A1 Single feature size MOS technology power device |
| 05/07/1997 | EP0772241A1 High density MOS technology power device |
| 05/07/1997 | EP0772237A2 Semiconductor device including protection means |
| 05/07/1997 | EP0699346A4 Scr electrostatic discharge protection for integrated circuits |
| 05/07/1997 | EP0469136B1 High electron mobility transistor |
| 05/07/1997 | CN1149203A Semiconductor device and manufacturing method thereof |
| 05/07/1997 | CN1149198A Method for manufacturing MOS transistor with low dosed drain and upside-down T shape grid and its structure |
| 05/07/1997 | CN1034841C Transistor with common base region |
| 05/06/1997 | US5627779 Non-volatile semiconductor memory having an array of non-volatile memory cells and method for driving the same |
| 05/06/1997 | US5627772 By a computer |
| 05/06/1997 | US5627715 Circuit construction for protective biasing |
| 05/06/1997 | US5627711 Self-protected semiconductor protection component |
| 05/06/1997 | US5627403 Adhesion between dielectric layers in an integrated circuit |
| 05/06/1997 | US5627402 Variable-capacitance device and semiconductor integrated circuit device having such variable-capacitance device |
| 05/06/1997 | US5627401 Bipolar transistor operating method with base charge controlled by back gate bias |
| 05/06/1997 | US5627397 Semiconductor acceleration sensor with source and drain regions |
| 05/06/1997 | US5627396 Micromachined relay and method of forming the relay |
| 05/06/1997 | US5627395 Vertical transistor structure |
| 05/06/1997 | US5627394 LD-MOS transistor |
| 05/06/1997 | US5627393 Vertical channel device having buried source |
| 05/06/1997 | US5627392 Semiconductor structure for long term learning |
| 05/06/1997 | US5627390 Semiconductor device with columns |
| 05/06/1997 | US5627389 High-frequency traveling wave field-effect transistor |
| 05/06/1997 | US5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same |
| 05/06/1997 | US5627385 Lateral silicon carbide transistor |
| 05/06/1997 | US5627384 Semiconductor device and method of fabricating the same |
| 05/06/1997 | US5627383 Optoelectronic devices utilizing multiple quantum well pin structures |
| 05/06/1997 | US5627103 Method of thin film transistor formation with split polysilicon deposition |
| 05/06/1997 | US5627096 Manufacturing method of electric charge transferring devices |
| 05/06/1997 | US5627093 Method of manufacturing a wiring layer for use in a semiconductor device having a plurality of conductive layers |
| 05/06/1997 | US5627092 Deep trench dram process on SOI for low leakage DRAM cell |
| 05/06/1997 | US5627090 Semiconductor element and process for production for the same |
| 05/06/1997 | US5627089 Atmosphere pressure chemical vapor deposition; forming gate electrode having sloped sides |
| 05/06/1997 | US5627087 Process for fabricating metal-oxide semiconductor (MOS) transistors based on lightly doped drain (LDD) structure |
| 05/06/1997 | US5627086 Method of forming thin-film single crystal for semiconductor |
| 05/06/1997 | US5627085 Method for hydrogenating a polycrystal silicon layer of a thin film transistor |
| 05/06/1997 | US5627084 Method for fabricating MIS semiconductor device |
| 05/06/1997 | US5626812 Method of producing carbon material by bending at least one carbon atom layer of graphite |
| 05/06/1997 | US5626779 Micromachine transducer with cantilevered movable portion |