| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 05/02/1997 | EP0771104A2 Two-dimensional CCD image sensor free from vertical black streaks |
| 05/02/1997 | EP0771035A1 Semiconductor device and manufacturing method thereof |
| 05/02/1997 | EP0771034A2 Semiconductor device with a buffer structure |
| 05/02/1997 | EP0771028A2 Semiconductor device with passivation structure |
| 05/02/1997 | EP0771021A2 Transistor fabrication method |
| 05/02/1997 | EP0770267A2 Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization |
| 05/02/1997 | EP0654169A4 Cubic metal oxide thin film epitaxially grown on silicon. |
| 05/02/1997 | EP0443610B1 Nonvolatile semiconductor memory device |
| 05/01/1997 | WO1997015949A2 Electronic device manufacture |
| 05/01/1997 | WO1997015948A2 Electronic devices comprising thin-film circuitry |
| 05/01/1997 | WO1997015947A1 Manufacture of electric devices comprising thin-film circuitry on an organic substrate |
| 04/30/1997 | DE19624309A1 Emitter controlled thyristor device, e.g. power semiconductor device |
| 04/30/1997 | DE19619705A1 Semiconductor memory device, e.g. EEPROM with trench formed in underlying layer |
| 04/30/1997 | DE19544721C1 Verfahren zur Herstellung einer integrierten Schaltungsanordnung mit mindestens einem MOS-Transistor A process for producing an integrated circuit arrangement having at least one MOS transistor |
| 04/29/1997 | US5625589 Static memory cell with spaced apart conducting layers |
| 04/29/1997 | US5625587 Rare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devices |
| 04/29/1997 | US5625414 Imaging device using asymmetrical timing for pixel summing |
| 04/29/1997 | US5625217 MOS transistor having a composite gate electrode and method of fabrication |
| 04/29/1997 | US5625216 MOS transistor having increased gate-drain capacitance |
| 04/29/1997 | US5625214 Semiconductor device |
| 04/29/1997 | US5625212 Semiconductor memory device and method of manufacturing the same |
| 04/29/1997 | US5625211 Two-transistor electrically-alterable switch employing hot electron injection and fowler nordheim tunneling |
| 04/29/1997 | US5625208 Method for using a charge injection transistor |
| 04/29/1997 | US5625206 High-speed double-heterostructure bipolar transistor devices |
| 04/29/1997 | US5625205 Bipolar transistor circuit |
| 04/29/1997 | US5625203 Controlled turn-off power semiconductor device |
| 04/29/1997 | US5625200 Complementary TFT devices with diode-effect elimination means independent of TFT-channel geometry |
| 04/29/1997 | US5625199 Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
| 04/29/1997 | US5624869 Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen |
| 04/29/1997 | US5624861 Method of manufacturing semiconductor device |
| 04/29/1997 | US5624860 Vertical field effect transistor and method |
| 04/29/1997 | US5624858 Method of manufacturing a semiconductor device with increased breakdown voltage |
| 04/29/1997 | US5624856 Method for forming a lateral bipolar transistor |
| 04/29/1997 | US5624855 Process of producing insulated-gate bipolar transistor |
| 04/29/1997 | US5624854 Method of formation of bipolar transistor having reduced parasitic capacitance |
| 04/29/1997 | US5624853 Method for forming heterojunction bipolar transistors |
| 04/29/1997 | US5624852 Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time |
| 04/24/1997 | WO1997015081A1 Semiconductor resistor device |
| 04/24/1997 | WO1997015080A1 Field controlled dipole transistor |
| 04/24/1997 | WO1997015079A1 A wide bandgap semiconductor device having a heterojunction |
| 04/24/1997 | WO1997015071A1 Manufacture of a semiconductor device with selectively deposited semiconductor zone |
| 04/24/1997 | WO1997015068A2 Improved metal-to-metal via-type antifuse and methods of programming |
| 04/24/1997 | WO1997015066A2 Process for producing a speed of rotation coriolis sensor |
| 04/24/1997 | WO1997004488A3 Semiconductor device of HV-LDMOST type |
| 04/24/1997 | DE19623822A1 Evaluation method for semiconductor device |
| 04/24/1997 | DE19539340A1 Electronic device, e.g. MOS transistor for submicron VLSI or ULSI circuits |
| 04/24/1997 | DE19539049A1 Verfahren zur Herstellung eines Coriolis-Drehratensensors Process for the preparation of a Coriolis rotation rate sensor |
| 04/24/1997 | DE19539021A1 Feldgesteuerter Bipolartransistor A field controlled bipolar transistor |
| 04/24/1997 | DE19538717A1 Diamond crystals doped with foreign atoms or ions |
| 04/23/1997 | EP0769816A1 High breakdown voltage PM junction and method for making it |
| 04/23/1997 | EP0769811A1 Method of fabricating self aligned DMOS devices |
| 04/23/1997 | EP0769810A2 Bipolar transistor and method of fabricating it |
| 04/23/1997 | EP0769808A2 Wet etching process with high selectivity between Cu and Cu3Ge |
| 04/23/1997 | EP0769754A1 Monolithic fingerprint sensor |
| 04/23/1997 | EP0769208A1 Self-aligned contact trench dmos transistor structure and methods of fabricating same |
| 04/23/1997 | EP0769207A1 Method of fabricating self-aligned contact trench dmos transistors |
| 04/23/1997 | EP0526646B1 Semiconductor device having an isolation region enriched in oxygen and a fabrication process thereof |
| 04/23/1997 | EP0344292B1 A process of fabricating self-aligned semiconductor devices |
| 04/23/1997 | CN1148289A Power amplifier circuit |
| 04/23/1997 | CN1148274A Trench DMOS and method of fabricating the same |
| 04/23/1997 | CN1148273A Transistor in semiconductor device and method of making the same |
| 04/23/1997 | CN1148272A Transistor in semiconductor device and method of making the same |
| 04/23/1997 | CN1148271A Semiconductor device and method of mfg. the same |
| 04/23/1997 | CN1148269A Method of Mfg. Semiconductor device |
| 04/23/1997 | CN1148262A Semiconductor device and method for mfg. same |
| 04/23/1997 | CN1148261A Method for fabricating semiconductor device |
| 04/23/1997 | CN1034703C Heterojunction bipolar transistors |
| 04/22/1997 | US5623445 Semiconductor memory device having data erasing mechanism |
| 04/22/1997 | US5623442 Memory cells and memory devices with a storage capacitor of parasitic capacitance and information storing method using the same |
| 04/22/1997 | US5623439 For storing information in the form of ferroelectric polarization |
| 04/22/1997 | US5623231 Push-pull power amplifier |
| 04/22/1997 | US5623167 Semiconductor device |
| 04/22/1997 | US5623165 Insulated gate field effect semiconductor device and forming method thereof |
| 04/22/1997 | US5623161 Electronic element and method of producing same |
| 04/22/1997 | US5623157 Semiconductor device having a lead including aluminum |
| 04/22/1997 | US5623155 MOSFET on SOI substrate |
| 04/22/1997 | US5623154 Semiconductor device having triple diffusion |
| 04/22/1997 | US5623153 Sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains |
| 04/22/1997 | US5623152 Insulated gate semiconductor device |
| 04/22/1997 | US5623151 MOS-gated power semiconductor devices with conductivity modulation by positive feedback mechanism |
| 04/22/1997 | US5623099 Two-element semiconductor capacitive acceleration sensor |
| 04/22/1997 | US5622901 Method of forming a semiconductor strain sensor |
| 04/22/1997 | US5622893 Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes |
| 04/22/1997 | US5622891 Method of manufacturing semiconductor device with reduced side gate effect |
| 04/22/1997 | US5622885 Method for fabricating transistors in isolation regions in a substrate |
| 04/22/1997 | US5622881 Packing density for flash memories |
| 04/22/1997 | US5622880 Method of making a low power, high performance junction transistor |
| 04/22/1997 | US5622879 Methods for fabricating and operating electrically erasable and programmable integrated circuit memory |
| 04/22/1997 | US5622878 Method of making an integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps |
| 04/22/1997 | US5622877 Nickel barrier |
| 04/22/1997 | US5622814 Effective photolithographic process without accuracy adjustment photomasks |
| 04/17/1997 | DE19640561A1 Insulated gate semiconductor device e.g. power MOSFET or IGBT |
| 04/17/1997 | DE19623846A1 SOI-MOS transistor structure |
| 04/17/1997 | DE19613265C1 Circuit element, e.g. laser diode |
| 04/17/1997 | DE19537814A1 Sensor, esp. acceleration sensor |
| 04/16/1997 | EP0768761A2 Multiple gated MOSFET for use in DC-DC converter |
| 04/16/1997 | EP0768718A2 Short channel field effect transistor |
| 04/16/1997 | EP0768717A2 Power semiconductor device |
| 04/16/1997 | EP0768716A2 Bipolar transistor and fabrication method thereof |
| 04/16/1997 | EP0768715A2 Graded-channel semiconductor device and method of manufacturing the same |