| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/07/1997 | US5592005 Semiconductor device |
| 01/07/1997 | US5592004 Ultraviolet radiation erasable |
| 01/07/1997 | US5592003 Nonvolatile semiconductor memory and method of rewriting data thereto |
| 01/07/1997 | US5592002 Non-volatile semiconductor memory device having reduced current consumption |
| 01/07/1997 | US5592001 Non-volatile semiconductor memory device |
| 01/07/1997 | US5592000 Non-volatile semiconductor memory device programmable and erasable at low voltage |
| 01/07/1997 | US5591999 Electrically erasable programmable read only memory device with an improved memory cell pattern layout |
| 01/07/1997 | US5591998 Semiconductor memory device |
| 01/07/1997 | US5591997 Low capacitance floating diffusion structure for a solid state image sensor |
| 01/07/1997 | US5591996 Recirculating charge transfer magnetic field sensor |
| 01/07/1997 | US5591994 Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements |
| 01/07/1997 | US5591991 Semiconductor device and method of manufacturing the same |
| 01/07/1997 | US5591990 Active matrix assembly |
| 01/07/1997 | US5591989 Semiconductor device having first and second gate insulating films |
| 01/07/1997 | US5591987 Semiconductor MIS field effect transistor with semi-amorphous semiconductor material |
| 01/07/1997 | US5591917 Semiconductor pressure sensor with rated pressure specified for desired error of linearity |
| 01/07/1997 | US5591681 Method for achieving a highly reliable oxide film |
| 01/07/1997 | US5591679 Sealed cavity arrangement method |
| 01/07/1997 | US5591670 Method of manufacturing a semiconductor device having self aligned contact hole |
| 01/07/1997 | US5591667 Method for fabricating MOS transistor utilizing doped disposable layer |
| 01/07/1997 | US5591666 Growing indium arsenide layer; crystallization |
| 01/07/1997 | US5591662 Method of manufacturing a power integrated circuit (PIC) structure |
| 01/07/1997 | US5591657 Semiconductor apparatus manufacturing method employing gate side wall self-aligning for masking |
| 01/07/1997 | US5591655 Process for manufacturing a vertical switched-emitter structure with improved lateral isolation |
| 01/07/1997 | US5591653 Crystallized silicon-germanium channel region |
| 01/07/1997 | US5591652 Method of manufacturing flash memory with inclined channel region |
| 01/07/1997 | US5591651 Method of making a bipolar stripe transistor structure |
| 01/07/1997 | US5591650 Method of making a body contacted SOI MOSFET |
| 01/03/1997 | WO1997000536A1 Semiconductor device fabrication |
| 01/03/1997 | WO1996029741A3 Semiconductor device provided with an ligbt element |
| 01/03/1997 | CA2220643A1 Semiconductor device fabrication |
| 01/02/1997 | EP0751574A2 Compression-type power semiconductor device |
| 01/02/1997 | EP0751573A1 Integrated power circuit and corresponding manufacturing process |
| 01/02/1997 | EP0751572A2 High voltage integrated circuit and level shift unit |
| 01/02/1997 | EP0751566A2 A thin film metal barrier for electrical interconnections |
| 01/02/1997 | EP0751417A1 Display device and production method thereof |
| 01/02/1997 | EP0750795A1 Thin film devices |
| 01/02/1997 | EP0750794A1 Co-implantation of arsenic and phosphorus in extended drain region for improved performance of high voltage nmos device |
| 01/02/1997 | EP0750793A1 Silicon controlled rectifier for esd protection |
| 01/02/1997 | EP0750789A1 Semiconductor device in silicon carbide |
| 01/02/1997 | EP0683921A4 Microstructures and single mask, single-crystal process for fabrication thereof. |
| 01/02/1997 | DE19626386A1 Prodn. of semiconductor element |
| 01/02/1997 | DE19625605A1 Semiconductor sensor for physical parameter |
| 01/02/1997 | DE19523606A1 Elektronisches Bauelement, sowie Verfahren zu seiner Herstellung Electronic component, and processes for its preparation |
| 01/02/1997 | DE19523375A1 Ohmscher Kontakt, sowie Verfahren zu seiner Herstellung Ohmic contact, and to processes for its preparation |
| 01/01/1997 | CN1139296A insulated gate semiconductor device and of manufacture |
| 01/01/1997 | CN1139295A Method for fabricating vertical bipolar transistor |
| 01/01/1997 | CN1139294A Semiconductor device and production thereof |
| 01/01/1997 | CN1139277A Flash eeprom cell and method of making the same |
| 12/31/1996 | US5590072 Nonvolatile semiconductor memory device |
| 12/31/1996 | US5590053 Method of determining a space group |
| 12/31/1996 | US5589962 Active matrix display device using aluminum alloy in scanning signal line or video signal line |
| 12/31/1996 | US5589847 Switched capacitor analog circuits using polysilicon thin film technology |
| 12/31/1996 | US5589708 Radiation hard integrated circuits with implanted silicon in gate oxide layer, field oxide region, and interlevel dielectric layer |
| 12/31/1996 | US5589707 Semiconductor chip |
| 12/31/1996 | US5589702 High value gate leakage resistor |
| 12/31/1996 | US5589700 Semiconductor nonvolatile memory |
| 12/31/1996 | US5589699 Electrically erasable programmable non-volatile semiconductor memory device having select gates and small number of contact holes |
| 12/31/1996 | US5589698 Solid state imaging device having sliding potential gradient |
| 12/31/1996 | US5589696 Tunnel transistor comprising a semiconductor film between gate and source/drain |
| 12/31/1996 | US5589695 High-performance high-voltage device structures |
| 12/31/1996 | US5589692 Sub-nanoscale electronic systems and devices |
| 12/31/1996 | US5589688 Infrared radiation sensor |
| 12/31/1996 | US5589421 Method of manufacturing annealed films |
| 12/31/1996 | US5589419 Process for fabricating semiconductor device having a multilevel interconnection |
| 12/31/1996 | US5589416 Process for forming integrated capacitors |
| 12/31/1996 | US5589415 Method for forming a semiconductor structure with self-aligned contacts |
| 12/31/1996 | US5589411 Process for fabricating a high-voltage MOSFET |
| 12/31/1996 | US5589410 An integrated semiconductor device having a buried semiconductor layer and fabrication method thereof |
| 12/31/1996 | US5589409 Fabrication of bipolar transistors with improved output current-voltage characteristics |
| 12/31/1996 | US5589408 Thermally annealing a metal-semiconductor contact with semiconductor substrate |
| 12/31/1996 | US5589405 Method for fabricating VDMOS transistor with improved breakdown characteristics |
| 12/31/1996 | US5589233 Single chamber CVD process for thin film transistors |
| 12/31/1996 | US5589083 Method of manufacturing microstructure by the anisotropic etching and bonding of substrates |
| 12/27/1996 | WO1996042112A1 Semiconductor integrated circuit device, production thereof, and semiconductor wafer |
| 12/27/1996 | WO1996042105A1 Method for forming salicides |
| 12/27/1996 | EP0750354A2 Semiconductor device having capacitor |
| 12/27/1996 | EP0750353A2 Single electron tunnel device and method for fabricating the same |
| 12/27/1996 | EP0750352A2 Semiconductor device layout |
| 12/27/1996 | EP0750351A2 MOS semiconductor device with improved m-characteristics |
| 12/27/1996 | EP0750350A2 Solid state pixel array with supplementary crossover structure |
| 12/27/1996 | EP0750347A1 Dynamic random access memory device and method of producing the same |
| 12/27/1996 | EP0750346A1 Monolithic assembly of semiconductor components including a high-speed diode |
| 12/27/1996 | EP0750339A1 Process for manufacturing transistors |
| 12/27/1996 | EP0750338A2 Etching process of CoSi2 layers |
| 12/27/1996 | EP0750333A2 Highly doped N+ substrate and a method for making |
| 12/27/1996 | EP0749528A1 A turbine engine ignition exciter circuit |
| 12/27/1996 | CA2222123A1 Method for forming salicides |
| 12/24/1996 | US5587948 Nonvolatile semiconductor memory with NAND structure memory arrays |
| 12/24/1996 | US5587947 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase |
| 12/24/1996 | US5587867 Surge absorber |
| 12/24/1996 | US5587668 Semiconductor devices utilizing neuron MOS transistors |
| 12/24/1996 | US5587609 II-VI group compound semiconductor device metallic nitride ohmic contact for p-type |
| 12/24/1996 | US5587604 Semiconductor structure |
| 12/24/1996 | US5587599 Bipolar transistor and manufacturing method |
| 12/24/1996 | US5587595 Lateral field-effect-controlled semiconductor device on insulating substrate |
| 12/24/1996 | US5587594 Semiconductor component having gate-turn-off thyristor and reduced thermal impairment |
| 12/24/1996 | US5587591 Solid state fluoroscopic radiation imager with thin film transistor addressable array |
| 12/24/1996 | US5587343 Semiconductor sensor method |
| 12/24/1996 | US5587340 Method of forming a semiconductor device in a substrate depression |