Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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08/12/1997 | US5656822 Thin film transistor having increased effective channel width |
08/12/1997 | US5656821 Quantum semiconductor device with triangular etch pit |
08/12/1997 | US5656781 Capacitive pressure transducer structure with a sealed vacuum chamber formed by two bonded silicon wafers |
08/12/1997 | US5656776 Semiconductor sensor with sealed package |
08/12/1997 | US5656544 Process for forming a polysilicon electrode in a trench |
08/12/1997 | US5656540 Forming step on semiconductor substrate, carrying out crystal growth using metal compound having alkylamino group and organometallic compound |
08/12/1997 | US5656537 Preventing parasitic transistor from being formed in lateral end of semiconductor on insulator structure |
08/12/1997 | US5656527 Method for fabricating a non-volatile semiconductor memory device having storage cell array and peripheral circuit, and a structure therefore |
08/12/1997 | US5656522 Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements |
08/12/1997 | US5656518 Method for fabrication of a non-symmetrical transistor |
08/12/1997 | US5656517 Windowed source and segmented backgate contact linear geometry source cell for power DMOS processes |
08/12/1997 | US5656516 Method for forming silicon oxide layer |
08/12/1997 | US5656515 Method of making high-speed double-heterostructure bipolar transistor devices |
08/12/1997 | US5656514 Controlling doping concentrations to control band gaps |
08/12/1997 | US5656512 Method of manufacturing a semiconductor accelerometer |
08/12/1997 | US5656511 Manufacturing method for semiconductor device |
08/12/1997 | US5656076 Method for growing III-V group compound semiconductor crystal |
08/12/1997 | CA2064146C Schottky barrier diode and a method of manufacturing thereof |
08/07/1997 | WO1997028566A1 Smooth switching thyristor |
08/07/1997 | WO1997028560A1 Method for forming ultra-thin gate oxides |
08/07/1997 | DE19653219A1 High voltage semiconductor integrated circuit, e.g. IGBT and CMOS logic with SOI substrate |
08/07/1997 | DE19633914C1 Thin film transistor device |
08/07/1997 | DE19630609A1 Production of transistor |
08/07/1997 | DE19604043A1 Vertical MOS field effect transistor device |
08/06/1997 | EP0788223A2 Pin diode variable attenuator |
08/06/1997 | EP0788170A2 Source-follower amplifier employing a fully depleted well structure |
08/06/1997 | EP0788169A2 High voltage semiconductor device having stable voltage blocking characteristics |
08/06/1997 | EP0788168A1 Process of fabricating non-volatile floating-gate memory devices, and memory device fabricated thereby |
08/06/1997 | EP0788161A2 Microelectronic device with thin film electrostatic discharge protection structure |
08/06/1997 | EP0788151A1 Method of fabricating junction-isolated semiconductor devices |
08/06/1997 | EP0788149A1 Method of depositing nanometre scale particles |
08/06/1997 | EP0787357A1 Permeable base transistor and process for the preparation thereof |
08/06/1997 | EP0787356A1 Mos-controlled high-power thyristor |
08/06/1997 | EP0787355A1 Process for producing a read-only storage cell arrangement with vertical mos transistors |
08/06/1997 | CN1156337A Semiconductor memory device and its producing method |
08/06/1997 | CN1156328A Power semiconductor device and its producing method |
08/06/1997 | CN1156313A Semiconductor memory device and its producing method |
08/06/1997 | CN1156298A Active matrix display device |
08/05/1997 | US5654917 Process for making and programming a flash memory array |
08/05/1997 | US5654916 Semiconductor memory device having an improved sense amplifier arrangement |
08/05/1997 | US5654863 Integrated circuit having a gate oxide |
08/05/1997 | US5654862 Method and apparatus for coupling multiple independent on-chip Vdd busses to an ESD core clamp |
08/05/1997 | US5654811 Color filter system for display panels |
08/05/1997 | US5654579 Electronic component |
08/05/1997 | US5654574 Electrostatic discharge protection device for integrated circuit |
08/05/1997 | US5654573 Semiconductor device having SOI structure and manufacturing method therefor |
08/05/1997 | US5654572 Static random access memory device |
08/05/1997 | US5654571 Semiconductor device |
08/05/1997 | US5654570 CMOS gate stack |
08/05/1997 | US5654569 Retarded double diffused drain device structure |
08/05/1997 | US5654568 Semiconductor device including nonvolatile memories |
08/05/1997 | US5654566 Magnetic spin injected field effect transistor and method of operation |
08/05/1997 | US5654563 Microelectronic integrated circuit including triangular semiconductor "or"g |
08/05/1997 | US5654562 Latch resistant insulated gate semiconductor device |
08/05/1997 | US5654561 Insulated gate bipolar transistor with multiple buffer layers |
08/05/1997 | US5654560 Semiconductor device with current detecting function and method of producing the same |
08/05/1997 | US5654558 Interband lateral resonant tunneling transistor |
08/05/1997 | US5654557 Quantum wire structure and a method for producing the same |
08/05/1997 | US5654244 Process for producing semiconductor strain-sensitive sensor |
08/05/1997 | US5654242 Method for making refractory metal silicide electrode |
08/05/1997 | US5654241 Doping metal ions into silicon substrate, heating to form silicides |
08/05/1997 | US5654237 Method of manufacturing semiconductor device |
08/05/1997 | US5654225 Integrated structure active clamp for the protection of power devices against overvoltages, and manufacturing process thereof |
08/05/1997 | US5654220 Method of making a stacked 3D integrated circuit structure |
08/05/1997 | US5654218 Method of manufacturing inverse t-shaped transistor |
08/05/1997 | US5654215 Doping various concentration dopant, forming symmetrical and non-symmetrical spacers |
08/05/1997 | US5654214 Method of manufacturing a semiconductor device having at least two field effect transistors with different pinch-off voltages |
08/05/1997 | US5654211 Method for manufacturing ultra-high speed bipolar transistor |
08/05/1997 | US5654209 Method of making N-type semiconductor region by implantation |
08/05/1997 | US5654208 Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step |
08/05/1997 | US5653803 Method of manufacturing a substrate for manufacturing silicon semiconductor elements |
07/31/1997 | WO1997027633A1 Sourceless floating gate memory device and method of storing data |
07/31/1997 | WO1997027632A1 Semiconductor neuron with variable input weights |
07/31/1997 | WO1997027630A1 Bipolar transistor having a collector region with selective doping profile and process for manufacturing the same |
07/31/1997 | WO1997027629A1 Mesa schottky diode with guard ring |
07/31/1997 | WO1997027623A1 Method for making a high-frequency or high-temperature transistor |
07/31/1997 | DE3051130C2 Bipolar or isolated gate transistor |
07/31/1997 | DE19632077A1 Power semiconductor device, especially gate-controlled transistor |
07/31/1997 | DE19612950C1 MOS transistor circuit structure |
07/31/1997 | CA2196365A1 Semiconductor device |
07/30/1997 | EP0786820A2 Organic thin film transistor with enhanced carrier mobility |
07/30/1997 | EP0786819A1 Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display |
07/30/1997 | EP0786818A2 Thin film transistor of silicon-on-insulator type |
07/30/1997 | EP0786817A1 Side components in a power semi-conductor device |
07/30/1997 | EP0786816A2 Bipolar transistor having an improved epitaxial base region and method of fabricating the same |
07/30/1997 | EP0786813A1 Field-effect transistor of the metal-dielectric-semiconductor type |
07/30/1997 | EP0786812A2 Semiconductor device having inter-level insulating layer allowing hydrogen to penetrate thereinto and process of fabrication thereof |
07/30/1997 | EP0786786A1 Capacitor with a double electrical layer |
07/30/1997 | EP0786148A1 Radiation hardened charge coupled device |
07/30/1997 | EP0632925A4 Crystallographically aligned ferroelectric films usable in memories and method of making. |
07/30/1997 | EP0613176B1 Process for fabricating integrated devices including nonvolatile memories and transistors with tunnel oxide protection |
07/30/1997 | CN1155774A 半导体器件 Semiconductor devices |
07/30/1997 | CN1155764A Structure and manufacturing method of high voltage metal oxide silicon field effect transistor (MOSFET) |
07/30/1997 | CN1155762A Flash memory cell and method of making the same |
07/30/1997 | CN1155761A Non-volatile semiconductor memory device |
07/30/1997 | CN1155757A Method for manufacturing semiconductor device with stabization of bipolar transistor and schottky barrier diode |
07/29/1997 | US5652716 Method for simulating distributed effects within a device such as a power semiconductor device |
07/29/1997 | US5652551 Method for high frequency device operation with high temperature and radiation hard characteristics |
07/29/1997 | US5652540 Current sensing circuit having at least one sense cell |
07/29/1997 | US5652458 Structure of a high voltage transistor in a semiconductor device and method of manufacturing the same |