| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 07/01/1997 | US5644145 Nonphotodegrading semiconductor having uniform, large area surface, photoelectric efficiency; photoelectric cells |
| 07/01/1997 | US5644121 Solid state image sensor |
| 07/01/1997 | US5643833 Forming electroconductive layer, forming insulating layer, forming antireflection layer, patterning, forming insulating layers, etching, depositing electroconductive connector layer |
| 07/01/1997 | US5643832 Semiconductor device and method for fabrication thereof |
| 07/01/1997 | US5643828 Reducing spaces between dots in quantum box improves coupling strength and operating speed |
| 07/01/1997 | US5643826 Disposing crystallization promoting solution containing specified element in contact with amorphous silicon film on substrate, crystallizing by heating |
| 07/01/1997 | US5643822 Controlled doping of ledge adjacent to trench on substrate surface to suppress conductivity and improve leakage of field effect transistor |
| 07/01/1997 | US5643821 Method for making ohmic contact to lightly doped islands from a silicide buried layer and applications |
| 07/01/1997 | US5643820 Method for fabricating an MOS capacitor using zener diode region |
| 07/01/1997 | US5643817 Forming metal pattern and metal layer, anodically oxidizing metal pattern and metal layer under first and second voltages |
| 07/01/1997 | US5643814 Method of making an EEPROM with an erase gate |
| 07/01/1997 | US5643813 Packing density for flash memories by using a pad oxide |
| 07/01/1997 | US5643812 Method of making EEPROM flash memory cell with erase gate |
| 07/01/1997 | US5643811 Method of making field effect transistor for high-frequency operation |
| 07/01/1997 | US5643809 Method for making high speed poly-emitter bipolar transistor |
| 07/01/1997 | US5643808 Process of manufacturing a semiconductor device |
| 07/01/1997 | US5643807 Selectively etching gate recess with fluorine compound which automatically forms etch stop layer of aluminum fluoride with aluminum in semiconductor compund, eliminating etch stop layer, non-selectively etching to complete |
| 07/01/1997 | US5643806 Manufacturing method for making bipolar device |
| 07/01/1997 | US5643805 Process for producing a bipolar device |
| 06/26/1997 | WO1997023001A1 Semiconductor device |
| 06/26/1997 | WO1997023000A1 SEMICONDUCTOR FIELD EFFECT DEVICE COMPRISING A SiGe LAYER |
| 06/26/1997 | WO1997022999A1 Hot carrier transistors and their manufacture |
| 06/26/1997 | DE19650493A1 Super self-aligned bipolar transistor with heterojunction |
| 06/26/1997 | DE19643903A1 Bipolar transistor with heterojunction manufacturing method |
| 06/26/1997 | DE19622418A1 Semiconductor sensor e.g. for controlling fuel injection or for antiblocking braking systems or auxiliary restraining systems |
| 06/26/1997 | DE19548443A1 Halbleiteranordnung zur Strombegrenzung A semiconductor device for current limitation, |
| 06/26/1997 | DE19548058A1 MOS-Transistor und Verfahren zu dessen Herstellung MOS transistor and method of producing the |
| 06/25/1997 | EP0780910A1 High voltage silicon diode with optimum placement of silicon-germanium layers |
| 06/25/1997 | EP0780909A2 Array with amorphous silicon TFTs |
| 06/25/1997 | EP0780908A1 A diffused channel insulated gate field effect transistor |
| 06/25/1997 | EP0780907A2 Semiconductor device having shallow impurity region without short-circuit between gate electrode and source and drain regions and process of fabrication thereof |
| 06/25/1997 | EP0780906A2 High electron mobility transistor comprising an InAs/InGaAs superlattice |
| 06/25/1997 | EP0780905A1 Isolated gate bipolar transistor |
| 06/25/1997 | EP0780904A2 Article with array of light active units |
| 06/25/1997 | EP0780902A1 Nonvolatile semiconductor memory and method for fabricating the same |
| 06/25/1997 | EP0780897A1 High-speed MOS-technology power device integrated structure with reduced gate resistance |
| 06/25/1997 | EP0780892A2 Method of manufacturing an inverted thin film transistor |
| 06/25/1997 | EP0780891A1 Method of manufacturing semiconductor device |
| 06/25/1997 | EP0780888A2 Method of manufacturing a gate electrode for a MOS structure |
| 06/25/1997 | EP0780887A1 Method of N-type doping a compound semiconductor layer |
| 06/25/1997 | EP0780711A1 Phototrigger thyristor |
| 06/25/1997 | EP0780675A1 Sensor and method of fabrication |
| 06/25/1997 | EP0780672A1 Field effect controllable semiconductor device with temperature sensor |
| 06/25/1997 | EP0780023A1 Process for self-aligned source for high density memory |
| 06/25/1997 | EP0610228B1 P-channel transistor |
| 06/25/1997 | CN1152800A Semiconductor device and making method |
| 06/25/1997 | CN1152797A Elements with resin shell capsulation and making method |
| 06/25/1997 | CN1152794A Semiconductor device and making process |
| 06/25/1997 | CN1035294C Withstand voltage layer with special shaped doped island for semiconductor device |
| 06/24/1997 | US5642372 Quantum-well type semiconductor laser device having multi-layered quantum-well layer |
| 06/24/1997 | US5642312 Flash EEPROM system cell array with more than two storage states per memory cell |
| 06/24/1997 | US5642295 Systems utilizing a single chip microcontroller having non-volatile memory devices and power devices |
| 06/24/1997 | US5642252 Insulated gate semiconductor device and driving circuit device and electronic system both using the same |
| 06/24/1997 | US5642213 Semiconductor device |
| 06/24/1997 | US5642162 Charge transfer device having a signal processing circuit for correcting output voltage |
| 06/24/1997 | US5641983 Semiconductor device having a gate electrode having a low dopant concentration |
| 06/24/1997 | US5641982 Mos field effect transistor |
| 06/24/1997 | US5641980 Device having a high concentration region under the channel |
| 06/24/1997 | US5641979 Semiconductor memory device having electrically erasable programmable read only memory and dynamic random access memory functions and method of writing, reading and erasing information therefor |
| 06/24/1997 | US5641977 Compound semiconductor field effect transistor |
| 06/24/1997 | US5641976 Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body |
| 06/24/1997 | US5641975 Aluminum gallium nitride based heterojunction bipolar transistor |
| 06/24/1997 | US5641974 LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
| 06/24/1997 | US5641708 Method for fabricating conductive structures in integrated circuits |
| 06/24/1997 | US5641702 Method of making semiconductor integrated-circuit capacitor |
| 06/24/1997 | US5641700 Charge coupled device with edge aligned implants and electrodes |
| 06/24/1997 | US5641698 Method of fabricating FET device with double spacer |
| 06/24/1997 | US5641695 Forming silicon carbide junction field effect transistor providing source, drain and gate contacts self-aligned to source, drain and gate areas and annealing of source and drain contacts prior to forming gate contact |
| 06/24/1997 | US5641692 Method for producing a Bi-MOS device |
| 06/24/1997 | US5641380 Method for fabricating a semiconductor device |
| 06/22/1997 | CA2193401A1 Vertical mos-fet with improved breakdown voltages |
| 06/19/1997 | WO1997022150A1 Semiconductor device |
| 06/19/1997 | WO1997022149A1 Lateral thin-film soi devices with linearly-grated field oxide and linear doping profile |
| 06/19/1997 | WO1997022145A1 Method of manufacturing a semiconductor device for surface mounting suitable for comparatively high voltages, and such a semiconductor device |
| 06/19/1997 | WO1997022142A1 Thin film semiconductor device, method for manufacturing thin film semiconductor device, liquid crystal display, method for manufacturing liquid crystal display, electronic apparatus, method for manufacturing electronic apparatus, and method for depositing thin film |
| 06/19/1997 | WO1997022141A1 Method of manufacturing thin film semiconductor device, and thin film semiconductor device |
| 06/19/1997 | WO1997022010A1 Accelerometer and method for making same |
| 06/19/1997 | WO1997017721A3 Method for making a circuit structure having a flip-mounted matrix of devices |
| 06/19/1997 | WO1997015949A3 Electronic device manufacture |
| 06/19/1997 | WO1997015068A3 Improved metal-to-metal via-type antifuse and methods of programming |
| 06/19/1997 | DE19610135C1 Electronic device, esp. for switching hv electric currents |
| 06/19/1997 | CA2239106A1 Accelerometer and method for making same |
| 06/18/1997 | EP0779666A2 Semiconductor device and method of fabricating semiconductor device |
| 06/18/1997 | EP0779665A2 Low voltage mosfet with low on-resistance and high breakdown voltage |
| 06/18/1997 | EP0779664A2 Apparatus comprising a heterojunction bipolar transistor |
| 06/18/1997 | EP0779663A2 Epitaxial-base bipolar transistor and method of manufacturing the same |
| 06/18/1997 | EP0779662A2 Semiconductor device with bipolar structure and method of fabricating the same |
| 06/18/1997 | EP0779652A2 Method for making a heterojunction bipolar transistor |
| 06/18/1997 | EP0779380A1 III-V Semiconductor material and electronic device incorporating this material |
| 06/18/1997 | CN1152192A Method of manufacturing semiconductor devices |
| 06/18/1997 | CN1152175A Output buffer with antistatic capacity |
| 06/17/1997 | US5640346 Electrically programmable memory cell |
| 06/17/1997 | US5640344 Programmable non-volatile bidirectional switch for programmable logic |
| 06/17/1997 | US5640090 Sensor IC |
| 06/17/1997 | US5640067 Multilayer; containing titanium nitride barrier |
| 06/17/1997 | US5640043 High voltage silicon diode with optimum placement of silicon-germanium layers |
| 06/17/1997 | US5640040 High breakdown voltage semiconductor device |
| 06/17/1997 | US5640037 Cell with self-aligned contacts |
| 06/17/1997 | US5640035 Semiconductor device |
| 06/17/1997 | US5640034 Top-drain trench based resurf DMOS transistor structure |