Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/1996
12/24/1996US5587333 Capacitor in an integrated function block or an integrated circuit having high capacitance, a method for manufacturing said capacitor and utilizing of said capacitor as an integrated decoupling capacitor
12/24/1996US5587330 Method for manufacturing semiconductor device
12/24/1996US5587329 Method for fabricating a switching transistor having a capacitive network proximate a drift region
12/24/1996US5587328 Method for manufacturing semiconductor device
12/24/1996US5587327 Process for preparing a heterojunction bipolar transistor
12/24/1996US5587326 Forming conductor film including carbon, phosphorus and oxygen additives which prevents grain growth of polysilicon
12/19/1996WO1996041412A2 Monolithic class d amplifier
12/19/1996WO1996041380A1 Memory array having a multi-state element and method for forming such array or cells thereof
12/19/1996WO1996041372A1 Method and apparatus for fabricating self-assembling microstructures
12/19/1996WO1996041368A1 Multilayer high vertical aspect ratio thin film structures
12/19/1996WO1996041367A2 Method for shallow junction formation
12/19/1996WO1996033511A3 Method of manufacturing a progammable semiconductor device in the form of an anti-fuse
12/19/1996WO1996002964A3 A transferred electron effect device
12/19/1996DE19605109A1 Hybrid Schottky injection FET on SOI substrate
12/19/1996DE19600544A1 EEPROM with n=type source and p=type drain regions
12/18/1996EP0749167A1 Ferroelectric capacitor for semiconductor integrated circuit and method for manufacturing the same
12/18/1996EP0749166A1 Diode and method of manufacturing the same
12/18/1996EP0749165A2 Thin film transistor in insulated semiconductor substrate and manufacturing method thereof
12/18/1996EP0749163A2 MOS type semiconductor device
12/18/1996EP0749162A2 Vertical MISFET devices, CMOS process integration, RAM applications
12/18/1996EP0749158A1 Semiconductor device with auto-aligned polycide gate
12/18/1996EP0749156A1 Semiconductor device with self-aligned contacts and method of fabrication
12/18/1996EP0749127A2 Data storage element and method for restoring data
12/18/1996EP0748521A1 Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase
12/18/1996EP0748520A1 Silicon carbide-based mis structure with high latch-up resistance
12/18/1996EP0591476B1 Monolithically integrated circuit
12/18/1996EP0451286B1 Integrated circuit device
12/18/1996CN1138217A Multilayer metallized structure with high resistance to electromigration and its design method
12/18/1996CN1138216A Semiconductor device with plastic packaged
12/18/1996CN1138214A Flash eeprom cell and method of making the same
12/18/1996CN1138181A Active matrix display device
12/17/1996USRE35405 Method of manufacturing semiconductor device utilizing an accumulation layer
12/17/1996US5586073 Semiconductor device having a multi-layer channel structure
12/17/1996US5585991 Protective circuit for protecting load against excessive input voltage
12/17/1996US5585949 Electro-optical device
12/17/1996US5585660 Extended drain resurf lateral DMOS devices
12/17/1996US5585659 Complementary metal-insulator-semiconductor devices
12/17/1996US5585658 Semiconductor device having diffusion regions formed with an ion beam absorber pattern
12/17/1996US5585657 Windowed and segmented linear geometry source cell for power DMOS processes
12/17/1996US5585655 Field-effect transistor and method of manufacturing the same
12/17/1996US5585654 Field effect transistor having saturated drain current characteristic
12/17/1996US5585651 Insulated-gate semiconductor device having high breakdown voltages
12/17/1996US5585650 Semiconductor bidirectional switch and method of driving the same
12/17/1996US5585649 Compound semiconductor devices and methods of making compound semiconductor devices
12/17/1996US5585647 Integrated circuit device having an insulating substrate, and a liquid crystal display device having an insulating substrate
12/17/1996US5585311 Capacitive absolute pressure sensor and method
12/17/1996US5585300 Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes
12/17/1996US5585295 Method for forming inverse-T gate lightly-doped drain (ITLDD) device
12/17/1996US5585294 Method of fabricating lateral double diffused MOS (LDMOS) transistors
12/17/1996US5585292 Method of fabricating a thin film transistor
12/17/1996US5585291 Low temperature heat crystallization an amorphous silicon semiconductor
12/17/1996US5585290 Forming gate bus-line pattern by anodic oxidation
12/17/1996US5585289 Method of producing metal semiconductor field effect transistor
12/17/1996US5585287 Method of forming integrated current-limiter device for power MOS transistors
12/17/1996US5585284 Method of manufacturing a SOI DRAM
12/12/1996WO1996039718A1 Semiconductor device and method of production thereof
12/12/1996WO1996039713A1 A method of forming high pressure silicon oxynitride (oxynitride) gate dielectrics for metal oxide semiconductor (mos) devices with p+ polycrystalline silicon (polysilicon) gate electrodes
12/12/1996WO1996030945A3 Integrated heterostructures of group iii-v nitride semiconductor materials and methods for fabricating the same
12/12/1996WO1996030940A3 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT
12/12/1996DE19621434A1 Generation of triangular or tetrahedral mesh for finite difference analysis
12/12/1996DE19605633A1 Diode mfr. by inclined etching and double diffusion
12/11/1996EP0747969A1 Pilot transistor for quasivertical DMOS device
12/11/1996EP0747968A1 Structure and process for reducing the on-resistance of MOS-gated power devices
12/11/1996EP0747967A2 Vertical trench gate MOS device and a method of fabricating the same
12/11/1996EP0747966A2 High efficiency quasi-vertical DMOS in MOS or BICMOS process
12/11/1996EP0747965A1 Low-noise and power AlGaPSb/GaInAs HEMTs and pseudomorphic HEMTs on GaAs substrate
12/11/1996EP0747964A2 Fully self-aligned submicron heterojunction bipolar transistor and method of fabricating the same
12/11/1996EP0747963A1 AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
12/11/1996EP0747961A2 Zero-power SRAM with patterned buried oxide isolation
12/11/1996EP0747958A2 Vertically stacked switched-emitter devices
12/11/1996EP0747948A2 Method and apparatus for fabricating self-assembling microstructures
12/11/1996EP0747946A2 Method of forming planarized structures in an integrated circuit
12/11/1996EP0747941A2 Method of forming raised source/drain regions in an integrated circuit
12/11/1996EP0747940A2 Fully-dielectric-isolated FET technology
12/11/1996EP0747938A2 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof
12/11/1996EP0747937A2 Ferroelectric thin film coated substrate, producing method thereof and capacitor structure element using thereof
12/11/1996EP0747686A1 Forming a silicon diaphragm in a cavity by anodizing, oxidizing, and etching or by directly etching the porous silicon
12/11/1996EP0747684A1 Forming a silicon structure in a cavity by anodizing, oxidizing, and etching or by directly etching the porous silicon
12/11/1996EP0746905A1 A power semiconductor switch
12/11/1996EP0746877A1 Integrated digital magnetic field detectors
12/11/1996EP0746875A1 Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material glued on a support wafer
12/11/1996EP0487739B1 Semiconductor device and a method of manufacturing such a semiconductor device
12/11/1996CN1137688A Compound semiconductor device having reduced resistance
12/11/1996CN1033543C Electric circuit having superconducting multilayered structure and manufacturing method
12/10/1996US5583819 Apparatus and method of use of radiofrequency identification tags
12/10/1996US5583812 Flash EEPROM system cell array with more than two storage states per memory cell
12/10/1996US5583811 Transistor structure for erasable and programmable semiconductor memory devices
12/10/1996US5583810 Method for programming a semiconductor memory device
12/10/1996US5583369 Semiconductor device and method for forming the same
12/10/1996US5583368 Stacked devices
12/10/1996US5583366 Active matrix panel
12/10/1996US5583365 Fully depleted lateral transistor
12/10/1996US5583364 Semiconductor device
12/10/1996US5583363 Inverter semiconductor device
12/10/1996US5583362 Gate all around thin film transistor
12/10/1996US5583361 Semiconductor device
12/10/1996US5583359 Capacitor structure for an integrated circuit
12/10/1996US5583358 Semiconductor memory device having stacked capacitors
12/10/1996US5583355 Self-aligned FET having etched ohmic contacts
12/10/1996US5583353 Heterojunction field effect transistor
1 ... 1934 1935 1936 1937 1938 1939 1940 1941 1942 1943 1944 1945 1946 1947 1948 1949 1950 1951 1952 1953 1954 ... 2182