| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/05/1997 | EP0457886B1 Power mosfet transistor circuit |
| 02/05/1997 | CN1142167A Electrostatic-capacitor type sensor |
| 02/04/1997 | USRE35442 Mixed technology integrated circuit comprising CMOS structures and efficient lateral bipolar transistors with a high early voltage and fabrication thereof |
| 02/04/1997 | US5600592 Nonvolatile semiconductor memory device having a word line to which a negative voltage is applied |
| 02/04/1997 | US5600590 Process for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devices |
| 02/04/1997 | US5600451 Charge transfer device and output circuit thereof |
| 02/04/1997 | US5600197 Piezoelectric/electrostrictive film element and method of producing the same |
| 02/04/1997 | US5600177 Semiconductor device having an electrically conductive layer including a polycrystalline layer containing an impurity and a metallic silicide layer |
| 02/04/1997 | US5600174 Suspended single crystal silicon structures and method of making same |
| 02/04/1997 | US5600170 Interconnection structure of semiconductor device |
| 02/04/1997 | US5600169 Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| 02/04/1997 | US5600168 Semiconductor element and method for fabricating the same |
| 02/04/1997 | US5600167 Semiconductor device having low contact resistance |
| 02/04/1997 | US5600166 EPROM cell with a readily scalable interpoly dielectric |
| 02/04/1997 | US5600164 Non-volatile semiconductor memory device |
| 02/04/1997 | US5600163 Semiconductor element and semiconductor memory device using the same |
| 02/04/1997 | US5600160 Multichannel field effect device |
| 02/04/1997 | US5600156 Diamond semiconductor device with P-I-N type multilayer structure |
| 02/04/1997 | US5600154 Thin film transistor with particular nitrogen concentration |
| 02/04/1997 | US5600153 Conductive polysilicon lines and thin film transistors |
| 02/04/1997 | US5600071 Vertically integrated sensor structure and method |
| 02/04/1997 | US5599741 Method for making semiconductor device with metal deposited on electron donating surface of gate electrode |
| 02/04/1997 | US5599738 Methods of fabrication of submicron features in semiconductor devices |
| 02/04/1997 | US5599734 Method for fabricating MOS transistor utilizing doped disposable layer |
| 02/04/1997 | US5599728 Method of fabricating a self-aligned high speed MOSFET device |
| 02/04/1997 | US5599726 Method of making a conductive spacer lightly doped drain (LDD) for hot carrier effect (HCE) control |
| 02/04/1997 | US5599725 Method for fabricating a MOS transistor with two-layer inverse-T tungsten gate structure |
| 02/04/1997 | US5599724 FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same |
| 02/04/1997 | US5599723 Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance |
| 02/04/1997 | US5599389 Epitaxial growth of semiinsulating single crystal layer on doped semiconductor substrate, forming isolated active elements in undoped layer |
| 02/01/1997 | CA2182352A1 Variable resistor circuit, a variable attenuator circuit and a variable gain amplifier |
| 01/30/1997 | WO1997003470A1 Process for self-aligned source for high density memory |
| 01/30/1997 | WO1997003469A1 Electrically erasable programmable rom memory cell array and a method of producing the same |
| 01/30/1997 | WO1997003462A1 Process for manufacturing an integrated cmos circuit |
| 01/30/1997 | WO1997003458A1 Method of manufacturing semiconductor device |
| 01/29/1997 | EP0756332A2 MOS capacitor of a semiconductor device |
| 01/29/1997 | EP0756331A1 Current limiting component and method for making the same |
| 01/29/1997 | EP0756330A2 Power semiconductor device with insulated trench gate and manufacturing method thereof |
| 01/29/1997 | EP0756329A1 Vertical PNP transistor and relative fabrication method |
| 01/29/1997 | EP0756325A2 Semiconductor device having a base |
| 01/29/1997 | EP0756324A2 Bump electrode for transistor and method for producing the same |
| 01/29/1997 | EP0756322A1 Semiconductor device with integrated heat sink |
| 01/29/1997 | EP0756321A1 Process for manufacturing complementary MOS transistors |
| 01/29/1997 | EP0756317A2 MOS field effect transistor with improved pocket regions and method for fabricating the same |
| 01/29/1997 | EP0756164A2 Method for making diaphragm-based sensors and apparatus constructed therewith |
| 01/29/1997 | EP0614567B1 Nonvolatile random access memory device |
| 01/29/1997 | CN1141510A Semiconductor device and process of fabrication thereof |
| 01/29/1997 | CN1141509A Fet with stable threshold voltage and method of mfg. the same |
| 01/29/1997 | CN1141503A Method for producing semiconductor device |
| 01/28/1997 | US5598367 Trench EPROM |
| 01/28/1997 | US5598284 Electro-optical device defined by relationship of data voltage, residual voltage, spontaneous polarization, and liquid crystal time constant and capacitance |
| 01/28/1997 | US5598106 Semiconductor integrated circuit for preventing deterioration of the characteristics of an N-channel type transistor |
| 01/28/1997 | US5598028 Highly-planar interlayer dielectric thin films in integrated circuits |
| 01/28/1997 | US5598025 Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure |
| 01/28/1997 | US5598023 Photoelectric converting apparatus |
| 01/28/1997 | US5598021 MOS structure with hot carrier reduction |
| 01/28/1997 | US5598019 Semiconductor device having trench isolation structure and method of manufacturing the same |
| 01/28/1997 | US5598018 High power MOSFET with low on-resistance and high breakdown voltage |
| 01/28/1997 | US5598015 Hetero-junction bipolar transistor and semiconductor devices using the same |
| 01/28/1997 | US5598013 Semiconductor device having a source-drain region of a load transistor that is formed by implanting an impurity using an insulation layer as a mask |
| 01/28/1997 | US5598012 Thin-film transistor with wide gate electrode and liquid crystal display incorporating same |
| 01/28/1997 | US5598011 Thin film transistor and method of making the same |
| 01/28/1997 | US5597765 Method for making termination structure for power MOSFET |
| 01/28/1997 | US5597758 Method for forming an electrostatic discharge protection device |
| 01/28/1997 | US5597752 Method for manufacturing LDD type semiconductor device with complete self-alignment |
| 01/28/1997 | US5597750 Method of manufacturing a matrix of memory cells having control gates |
| 01/28/1997 | US5597749 Method of making nonvolatile memory cell with crystallized floating gate |
| 01/28/1997 | US5597748 Method of manufacturing NAND type EEPROM |
| 01/28/1997 | US5597744 Method of producing a silicon carbide semiconductor device |
| 01/28/1997 | US5597743 Method of manufacturing a field effect transistor with improved isolation between electrode |
| 01/28/1997 | US5597739 Semiconductors |
| 01/23/1997 | WO1997002609A1 Photodetector involving a mosfet having a floating gate |
| 01/23/1997 | WO1997002608A1 Ohmic contact and process for establishing it |
| 01/23/1997 | WO1997002607A1 Optoelectronic component and process for its manufacture |
| 01/23/1997 | WO1997002606A1 Low-voltage punch-through transient suppressor employing a dual-base structure |
| 01/23/1997 | WO1997002605A1 Method of fabricating a fast programming flash e2prom cell |
| 01/23/1997 | WO1997002604A1 Semiconductor device and its manufacture |
| 01/23/1997 | WO1997002603A1 Thyristor with a layer of charge carriers having a reduced lifetime |
| 01/23/1997 | WO1997002599A1 Method of producing a read-only storage cell arrangement |
| 01/23/1997 | WO1997002592A2 Power semiconductor devices |
| 01/23/1997 | DE19629088A1 Vertical silicon carbide field effect transistor for use in extreme environment |
| 01/23/1997 | DE19611689A1 Semiconductor component, e.g. power diode |
| 01/23/1997 | DE19526902A1 Monolithisch integrierte planare Halbleiteranordnung Monolithically integrated planar semiconductor device |
| 01/23/1997 | DE19526691A1 Verfahren zur Herstellung von Beschleunigungssensoren A process for producing acceleration sensors |
| 01/23/1997 | DE19526012A1 Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle Electrically erasable and programmable non-volatile memory cell |
| 01/23/1997 | CA2226015A1 Method of fabricating a fast programming flash e2prom cell |
| 01/22/1997 | EP0755078A1 Metal semiconductor contact |
| 01/22/1997 | EP0755077A2 High power MOS guided devices and methods of manufacturing them |
| 01/22/1997 | EP0755076A2 Vertical MOS semiconductor with recessed gate and method of manufacturing the same |
| 01/22/1997 | EP0755073A1 Method of producing semiconductor wells of different doping level |
| 01/22/1997 | EP0755071A2 Semiconductor probe card device with a ball-bump |
| 01/22/1997 | EP0755070A2 A semiconductor device and its manufacturing method |
| 01/22/1997 | EP0755069A1 Method of making In-containing III/V semiconductor devices |
| 01/22/1997 | EP0755067A1 Method of fabrication for sublithographic etching masks |
| 01/22/1997 | EP0754349A1 Semiconductor devices and methods |
| 01/22/1997 | EP0721643A4 Spacer flash cell process |
| 01/22/1997 | EP0702796A4 Microelectromechanical lateral accelerometer |
| 01/22/1997 | EP0566591B1 Semiconductor device |
| 01/22/1997 | EP0422250B1 Semiconductor device and method of producing the same |
| 01/22/1997 | CN1141078A Self-addressable self-assembling microelectronic system and devices for molecular biological analysis and diagnostics |