| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 04/02/1997 | EP0766090A2 Microelectronic integrated sensor and method of manufacturing the same |
| 04/02/1997 | EP0766089A2 Microelectronic integrated sensor and method for manufacturing the same |
| 04/02/1997 | EP0765530A1 Structure and fabrication of mosfet having multi-part channel |
| 04/02/1997 | EP0611967B1 Acceleration sensor |
| 04/02/1997 | CN1146827A Semiconductor device and process for its production |
| 04/02/1997 | CN1146826A Semiconductor apparatus with crystal defects and process for its fabrication |
| 04/02/1997 | CN1146823A Electrode structure and method for anodically-bonded capacitive sensors |
| 04/02/1997 | CN1146639A Method for preparation of silicon quantum wire using SiGe/Si heterogeneous structure |
| 04/02/1997 | CN1146629A Method for making semiconductor device |
| 04/02/1997 | CN1146628A Method for forming junction in high speed EEPROM unit |
| 04/02/1997 | CN1146627A Method for making transistor of semiconductor device |
| 04/02/1997 | CN1146605A Highly integrated storage element and making method |
| 04/02/1997 | CN1034453C 半导体器件 Semiconductor devices |
| 04/01/1997 | USRE35486 Circuital arrangement for preventing latchup in transistors with insulated collectors |
| 04/01/1997 | US5617358 Nonvolatile semiconductor memory device capable of converging threshold voltage with low power supply voltage |
| 04/01/1997 | US5617357 Flash EEPROM memory with improved discharge speed using substrate bias and method therefor |
| 04/01/1997 | US5617352 Non-volatile, bidirectional, electrically programmable integrated memory element implemented using double polysilicon |
| 04/01/1997 | US5617351 Three-dimensional direct-write EEPROM arrays and fabrication methods |
| 04/01/1997 | US5616960 Multilayered interconnection substrate having a resin wall formed on side surfaces of a contact hole |
| 04/01/1997 | US5616952 Semiconductor device with structure to decrease wiring capacitance |
| 04/01/1997 | US5616950 Thermally uniform transistor |
| 04/01/1997 | US5616947 Semiconductor device having an MIS structure |
| 04/01/1997 | US5616945 Multiple gated MOSFET for use in DC-DC converter |
| 04/01/1997 | US5616944 Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions |
| 04/01/1997 | US5616943 Electrostatic discharge protection system for mixed voltage application specific integrated circuit design |
| 04/01/1997 | US5616941 Electrically programmable read-only memory cell |
| 04/01/1997 | US5616938 MOS-controlled power semiconductor component for high voltages |
| 04/01/1997 | US5616936 Active matrix assembly with signal line crossing to equalize stray capacitance |
| 04/01/1997 | US5616935 Semiconductor integrated circuit having N-channel and P-channel transistors |
| 04/01/1997 | US5616934 Fully planarized thin film transistor (TFT) and process to fabricate same |
| 04/01/1997 | US5616933 Nitride encapsulated thin film transistor fabrication technique |
| 04/01/1997 | US5616932 Amorphous silicon germanium film and semiconductor device using the same |
| 04/01/1997 | US5616863 Transducer assembly |
| 04/01/1997 | US5616523 Method of manufacturing sensor |
| 04/01/1997 | US5616515 Silicon oxide germanium resonant tunneling |
| 04/01/1997 | US5616511 Method of fabricating a micro-trench storage capacitor |
| 04/01/1997 | US5616510 Method for making multimedia storage system with highly compact memory cells |
| 04/01/1997 | US5616509 Method for fabricating a semiconductor device |
| 04/01/1997 | US5616508 High speed bipolar transistor using a patterned etch stop and diffusion source |
| 04/01/1997 | US5616506 Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow direction |
| 03/27/1997 | WO1997011498A1 A varicap diode and method of manufacturing a varicap diode |
| 03/27/1997 | WO1997011497A1 Fabrication method of vertical field effect transistor |
| 03/27/1997 | WO1997011496A1 Semiconductor device, method of producing the same and system using the semiconductor device |
| 03/27/1997 | WO1997011495A1 Device with a p-n junction and a means of reducing the risk of breakdown of the junction |
| 03/27/1997 | WO1997011489A1 Process for generating the source regions of a flash-eeprom storage cell field |
| 03/27/1997 | WO1997011483A2 Method of producing very small structural widths on a semiconductor substrate |
| 03/27/1997 | DE19637277A1 Widerstand für eine integrierte Schaltung Resistance for an integrated circuit |
| 03/27/1997 | DE19611959A1 CMOSFET mfr. |
| 03/27/1997 | DE19543389A1 MOSFET with LDD structure manufacturing method |
| 03/27/1997 | DE19535322A1 Anordnung mit einem pn-Übergang und einer Maßnahme zur Herabsetzung der Gefahr eines Durchbruchs des pn-Übergangs Arrangement with a pn junction and a measure to reduce the risk of a breakdown of the pn junction |
| 03/26/1997 | EP0765025A2 Start-up circuit and semiconductor device for such a start-up circuit |
| 03/26/1997 | EP0764988A2 Isolated power transistor |
| 03/26/1997 | EP0764987A2 Rapid-sequence full-frame CCD sensor |
| 03/26/1997 | EP0764986A1 Semiconductor device and method for manufacturing the same |
| 03/26/1997 | EP0764982A1 Process for manufacturing an integrated CMOS circuit |
| 03/26/1997 | EP0764978A2 Method for bonding electronic components on a substrate by means of pressure sintering |
| 03/26/1997 | EP0764346A1 High vertical aspect ratio thin film structures |
| 03/26/1997 | EP0764343A1 Force detecting sensor and method of making |
| 03/26/1997 | EP0764336A1 Micromechanical memory sensor |
| 03/26/1997 | EP0764335A1 Electrode structure and method for anodically-bonded capacitive sensors |
| 03/26/1997 | EP0691035B1 Linear voltage-controlled resistance element |
| 03/26/1997 | EP0646246B1 Method for fabricating monolithic chip containing integrated circuitry and self-supporting microstructure |
| 03/26/1997 | EP0606220B1 Method of manufacturing a semiconductor accelerometer |
| 03/26/1997 | CN1146076A Semiconductor device |
| 03/26/1997 | CN1146073A Structure and production of silicone semiconductor diode and chip and their insulator |
| 03/26/1997 | CN1146052A Method for programming nonvolatile memory |
| 03/26/1997 | CN1034369C Continuous film feed device and method therefor |
| 03/25/1997 | US5615377 Method of simulating hot carrier deterioration of a P-MOS transistor |
| 03/25/1997 | US5615242 Charge transfer apparatus with output gate and driving method thereof |
| 03/25/1997 | US5615163 Semiconductor memory device |
| 03/25/1997 | US5615147 Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase |
| 03/25/1997 | US5615028 Liquid crystal display apparatus |
| 03/25/1997 | US5614771 Extended high voltage SCR switch |
| 03/25/1997 | US5614762 Field effect transistors having comb-shaped electrode assemblies |
| 03/25/1997 | US5614755 High voltage Shottky diode |
| 03/25/1997 | US5614752 Semiconductor device containing external surge protection component |
| 03/25/1997 | US5614751 Edge termination structure for power MOSFET |
| 03/25/1997 | US5614750 Buried layer contact for an integrated circuit structure |
| 03/25/1997 | US5614749 Silicon carbide trench MOSFET |
| 03/25/1997 | US5614748 Nonvolatile memory device and process for production of the same |
| 03/25/1997 | US5614747 Method for manufacturing a flash EEPROM cell |
| 03/25/1997 | US5614743 Microwave integrated circuit (MIC) having a reactance element formed on a groove |
| 03/25/1997 | US5614742 Micromechanical accelerometer with plate-like semiconductor wafers |
| 03/25/1997 | US5614740 High-speed peristaltic CCD imager with GaAs fet output |
| 03/25/1997 | US5614739 HIGFET and method |
| 03/25/1997 | US5614738 Insulated gate thyristor having a polysilicon resistor connected to its base |
| 03/25/1997 | US5614737 MOS-controlled high-power thyristor |
| 03/25/1997 | US5614732 Gate insulated field effect transistors and method of manufacturing the same |
| 03/25/1997 | US5614731 Thin-film transistor element having a structure promoting reduction of light-induced leakage current |
| 03/25/1997 | US5614730 Active matrix substrate |
| 03/25/1997 | US5614729 Top gate thin-film transistor |
| 03/25/1997 | US5614728 Thin film transistor and fabrication method thereof |
| 03/25/1997 | US5614727 Thin film diode having large current capability with low turn-on voltages for integrated devices |
| 03/25/1997 | US5614437 Method for fabricating reliable metallization with Ta-Si-N barrier for semiconductors |
| 03/25/1997 | US5614433 Silicon on insulator |
| 03/25/1997 | US5614430 Anti-punchthrough ion implantation for sub-half micron channel length MOSFET devices |
| 03/25/1997 | US5614429 Method for fabricating EEPROM with control gate in touch with select gate |
| 03/25/1997 | US5614427 Method of making an array of TFTs having reduced parasitic capacitance |
| 03/25/1997 | US5614426 Method of manufacturing semiconductor device having different orientations of crystal channel growth |
| 03/25/1997 | US5614425 Method of fabricating a bipolar transistor operable at high speed |