| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/25/1997 | US5605850 Method for making a low-noise bipolar transistor |
| 02/25/1997 | US5605848 Depositing polysilicon layer on gate oxide layer, implanting fluorine and nitrogen ions, annealing, patterning |
| 02/25/1997 | US5605847 Process for fabricating a TFT by selectively oxidizing or nitriding a light shielding layer |
| 02/25/1997 | US5605846 Method for manufacturing semiconductor device |
| 02/25/1997 | US5605845 Manufacture of electronic devices comprising thin-film transistors having self-aligned plural gates |
| 02/25/1997 | US5605662 Used to carry out and control multistep, muliplex reactions such as, nucleic acid hybridization, antibody/antigen reactions, biopolymer synthesis |
| 02/25/1997 | US5605601 Method of manufacturing semiconductor device |
| 02/20/1997 | WO1997006565A1 Process for preparing thin-film transistor, process for preparing active matrix substrate, and liquid crystal display |
| 02/20/1997 | WO1997006564A1 Semiconductor device and method for manufacturing the same |
| 02/20/1997 | WO1997006563A1 Ccd charge splitter |
| 02/20/1997 | WO1997006559A2 Process for producing a non-volatile memory cell |
| 02/20/1997 | WO1997006554A2 Semiconductor device provided with transparent switching element |
| 02/20/1997 | WO1997001847A3 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| 02/20/1997 | WO1997001238A3 Method of operating a ccd imager, and ccd imager suitable for the implementation of such a method |
| 02/20/1997 | DE19624916A1 LCD active matrix substrate manufacturing method |
| 02/20/1997 | DE19536753C1 MOS-Transistor mit hoher Ausgangsspannungsfestigkeit MOS transistor with high output voltage stability |
| 02/20/1997 | CA2201383A1 Ccd charge splitter |
| 02/19/1997 | EP0758799A2 InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
| 02/19/1997 | EP0758489A1 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices, and methods of fabricating same |
| 02/19/1997 | EP0712535A4 Trenched dmos transistor with channel block at cell trench corners |
| 02/19/1997 | EP0672299A4 Transistor fabrication methods and methods of forming multiple layers of photoresist. |
| 02/19/1997 | CN2247873Y 固体放电二极管 Solid discharge diode |
| 02/19/1997 | CN2247872Y High-speed high-voltage diode |
| 02/19/1997 | CN1143253A Method for making nonvolatile memory |
| 02/18/1997 | US5604699 Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories |
| 02/18/1997 | US5604655 Semiconductor protection circuit and semiconductor protection device |
| 02/18/1997 | US5604382 Semiconductor device with pillar-shaped contact layer |
| 02/18/1997 | US5604374 Semiconductor device and manufacturing method thereof |
| 02/18/1997 | US5604372 Semiconductor pressure sensor apparatus |
| 02/18/1997 | US5604370 Field implant for semiconductor device |
| 02/18/1997 | US5604369 ESD protection device for high voltage CMOS applications |
| 02/18/1997 | US5604368 Self-aligned double-gate MOSFET by selective lateral epitaxy |
| 02/18/1997 | US5604366 Floating gate memory device having discontinuous gate oxide thickness over the channel region |
| 02/18/1997 | US5604363 Semiconductor pressure sensor with package |
| 02/18/1997 | US5604357 Semiconductor nonvolatile memory with resonance tunneling |
| 02/18/1997 | US5604356 Superlattice ohmic contact on a compound semiconductor layer |
| 02/18/1997 | US5604154 Method of manufacturing coulamb blockade element using thermal oxidation |
| 02/18/1997 | US5604142 Method of making an EPROM with peripheral transistor |
| 02/18/1997 | US5604139 Method for manufacturing a semiconductor device |
| 02/18/1997 | US5604138 Process for making a semiconductor MOS transistor |
| 02/18/1997 | US5604137 Method for forming a multilayer integrated circuit |
| 02/13/1997 | WO1997005662A1 Nonvolatile reprogrammable interconnect cell with fn tunneling and programming method thereof |
| 02/13/1997 | WO1997005661A1 Modulation-doped field-effect transistor with a composition-modulated barrier structure |
| 02/13/1997 | WO1997005656A1 Method for making a flat screen active matrix, liquid crystal screen comprising the resulting active matrix, and screen addressing method therefor |
| 02/13/1997 | WO1997005655A1 Three-dimensional non-volatile memory |
| 02/13/1997 | WO1997005654A1 Semiconductor switch array with electrostatic discharge protection and method of fabricating |
| 02/13/1997 | WO1997005651A1 Active matrix esd protection and testing scheme |
| 02/13/1997 | WO1997005648A1 Method of forming self-aligned thin film transistor |
| 02/13/1997 | WO1997005624A1 Programmable non-volatile bidirectional switch for programmable logic |
| 02/13/1997 | WO1997005523A1 Improved tft, method of making and matrix displays incorporating the tft |
| 02/13/1997 | WO1997004906A1 Method of producing metal quantum dots |
| 02/12/1997 | EP0758144A1 Semiconductor device and method of fabrication |
| 02/12/1997 | EP0758088A2 Micromechanical switch |
| 02/12/1997 | EP0757845A1 Method for passivating the sides of a thin film semiconductor component |
| 02/12/1997 | EP0757835A1 High-speed, non-volatile electrically programmable and erasable cell and method |
| 02/12/1997 | CN1142875A 多孔半导体材料 Porous semiconductor material |
| 02/12/1997 | CN1142688A Semiconductor device and manufacturing method thereof |
| 02/12/1997 | CN1142684A Method for fabricating metal oxide field effect transistors |
| 02/12/1997 | CN1142683A Method for fabricating metal oxide semiconductor field effect transistor |
| 02/11/1997 | US5602987 Flash EEprom system |
| 02/11/1997 | US5602551 Analog-to-digital converter with silicon-on-insulator structure |
| 02/11/1997 | US5602501 Mixer circuit using a dual gate field effect transistor |
| 02/11/1997 | US5602417 Low-noise bipolar transistor operating predominantly in the bulk region |
| 02/11/1997 | US5602416 Power integrated circuit ("PIC") structure |
| 02/11/1997 | US5602411 Micromechanical component with a dielectric movable structure, and microsystem |
| 02/11/1997 | US5602410 Off-state gate-oxide field reduction in CMOS |
| 02/11/1997 | US5602405 Semiconductor device with base formed by the junction of two semiconductors of the same conductive type |
| 02/11/1997 | US5602404 Low voltage triggering silicon controlled rectifier structures for ESD protection |
| 02/11/1997 | US5602403 Ion Implantation buried gate insulator field effect transistor |
| 02/11/1997 | US5602061 Process and apparatus for manufacturing MOS device |
| 02/11/1997 | US5602055 Method of manufacturing a semiconductor device incorporating a selectively deposited contact |
| 02/11/1997 | US5602050 Method of making a semiconductor device with conductors on stepped substrate having planar upper surfaces |
| 02/11/1997 | US5602048 Semiconductor integrated circuit device and method of manufacturing the same |
| 02/11/1997 | US5602046 Integrated zener diode protection structures and fabrication methods for DMOS power devices |
| 02/11/1997 | US5602045 Method for making a semiconductor device |
| 02/11/1997 | CA2008628C Substance uct-1003 and process for producing the same |
| 02/06/1997 | WO1997004490A1 Electrically erasable and programmable non-volatile storage location |
| 02/06/1997 | WO1997004489A1 Short channel fermi-threshold field effect transistors |
| 02/06/1997 | WO1997004488A2 Semiconductor device of hv-ldmost type |
| 02/06/1997 | WO1997004487A1 Mos-controlled high-power thyristor |
| 02/06/1997 | WO1997004486A1 Monolithically integrated planar semi-conductor arrangement with temperature compensation |
| 02/06/1997 | WO1997004485A1 Radiation hardened charge coupled device |
| 02/06/1997 | WO1997004480A1 Method of producing an mos transistor |
| 02/06/1997 | WO1997004319A1 Method of producing acceleration sensors |
| 02/06/1997 | WO1996041367A3 Method for shallow junction formation |
| 02/06/1997 | WO1996025741A3 Multi-valued read-only storage location with improved signal-to-noise ratio |
| 02/06/1997 | DE19528238A1 Modulationsdotierter Feldeffekttrasistor mit kompositionsmodulierter Barrierenstruktur Modulation-doped Feldeffekttrasistor use composition-modulated barrier structure |
| 02/05/1997 | EP0757439A2 A variable resistor circuit, a variable attenuator circuit and a variable gain amplifier |
| 02/05/1997 | EP0757431A2 Machine structures fabricated of multiple microstructure layers |
| 02/05/1997 | EP0757392A1 Semiconductor structures |
| 02/05/1997 | EP0757391A2 Method for production of semiconductor integrated circuit device provided with a high voltage transistor |
| 02/05/1997 | EP0757389A1 High voltage driver circuit for inductive loads |
| 02/05/1997 | EP0757382A1 High voltage semiconductor monolithic device with integrated edge structure and corresponding manufacturing process |
| 02/05/1997 | EP0757380A2 Method of making a planar charged coupled device with edge aligned implants and electrodes connected with overlaying metal |
| 02/05/1997 | EP0757379A1 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor substrate |
| 02/05/1997 | EP0756761A1 Micro-electronic component and process for making it |
| 02/05/1997 | EP0756760A1 Semiconductor device with guard ring and process for its production |
| 02/05/1997 | EP0756758A1 Mosfet with reduced leakage current |
| 02/05/1997 | EP0756757A1 Semiconductor apparatus with crystal defects and process for its fabrication |
| 02/05/1997 | EP0530376B1 Semiconductor memory having nonvolatile semiconductor memory cell |