| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 01/22/1997 | CN1140900A Monolithic high frequency integrated circuit structure and method of manufacturing the same |
| 01/21/1997 | US5596529 Nonvolatile semiconductor memory device |
| 01/21/1997 | US5596523 Electrically erasable programmable read-only memory with an array of one-transistor memory cells |
| 01/21/1997 | US5596292 A.C. switch triggered at a predetermined half-period |
| 01/21/1997 | US5596221 Bipolar transistor with emitter double contact structure |
| 01/21/1997 | US5596220 Integrated lateral transistor with improved current amplification |
| 01/21/1997 | US5596218 Hot carrier-hard gate oxides by nitrogen implantation before gate oxidation |
| 01/21/1997 | US5596217 Semiconductor device including overvoltage protection diode |
| 01/21/1997 | US5596216 Semiconductor device with diode and capable of device protection |
| 01/21/1997 | US5596214 Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricating the same |
| 01/21/1997 | US5596211 Field effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gas |
| 01/21/1997 | US5596210 Light trigger type semiconductor device with reflection prevention film |
| 01/21/1997 | US5596208 Article comprising an organic thin film transistor |
| 01/21/1997 | US5596205 High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
| 01/21/1997 | US5596194 Single-wafer tunneling sensor and low-cost IC manufacturing method |
| 01/21/1997 | US5595944 Transistor and process for fabricating the same |
| 01/21/1997 | US5595940 Method of producing micromechanical structures |
| 01/21/1997 | US5595939 Liquid-sealed semiconductor pressure sensor and manufacturing method thereof |
| 01/21/1997 | US5595923 Method of forming a thin film transistor |
| 01/21/1997 | US5595922 Process for thickening selective gate oxide regions |
| 01/21/1997 | US5595921 Method for fabricating a fully depleted lateral transistor |
| 01/21/1997 | US5595920 Method of manufacturing a semiconductor memory device for use with image pickup |
| 01/21/1997 | US5595919 Method of making self-aligned halo process for reducing junction capacitance |
| 01/21/1997 | US5595918 Process for manufacture of P channel MOS-gated device |
| 01/21/1997 | US5595638 Method for manufacturing a semiconductor device utilizing an anodic oxidation |
| 01/21/1997 | CA2078941C Compound semiconductor device |
| 01/21/1997 | CA2070756C Field-effect transistor |
| 01/16/1997 | WO1997001854A1 Barrier layer for ferroelectric capacitor integrated on silicon |
| 01/16/1997 | WO1997001847A2 Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| 01/16/1997 | WO1997001654A1 Adhering metal to glass |
| 01/16/1997 | WO1996036072A3 Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization |
| 01/16/1997 | DE19620475A1 Flüssigkristallanzeigevorrichtung und Verfahren zum Betreiben derselben A liquid crystal display device and method of operating the same |
| 01/16/1997 | DE19525070A1 Elektrisch schreib- und löschbare Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung Electrically writable and erasable read-only memory cell arrangement and method for its manufacture |
| 01/15/1997 | EP0753193A1 Improvements in an apparatus and method of use of radiofrequency identification tags |
| 01/15/1997 | CN1140337A Active matrix electro-optical device |
| 01/15/1997 | CN1140336A Semiconductor device and manufacturing method thereof |
| 01/15/1997 | CN1140335A Protecting diode for semiconductor device |
| 01/15/1997 | CN1140330A Method for forming impurity junction regions of semiconductor device |
| 01/14/1997 | US5594750 Selectively Si-doped InAs/A1AsSb short-period-superlattices as N-type cladding layers for mid-IR laser structures grown on InAs substrates |
| 01/14/1997 | US5594688 Nonvolatile semiconductor memory device and method of producing the same |
| 01/14/1997 | US5594684 Polysilicon programming memory cell |
| 01/14/1997 | US5594626 Partially-molded, PCB chip carrier package for certain non-square die shapes |
| 01/14/1997 | US5594372 Source follower using NMOS and PMOS transistors |
| 01/14/1997 | US5594330 Movement actuator/sensor systems |
| 01/14/1997 | US5594292 Piezoelectric device |
| 01/14/1997 | US5594272 Bipolar transistor with base and emitter contact holes having shorter central portions |
| 01/14/1997 | US5594271 Load current detecting device including a multi-emitter bipolar transistor |
| 01/14/1997 | US5594266 Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
| 01/14/1997 | US5594264 LDD semiconductor device with peak impurity concentrations |
| 01/14/1997 | US5594263 Semiconductor device containing a semiconducting crystalline nanoporous material |
| 01/14/1997 | US5594262 Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer |
| 01/14/1997 | US5594261 Device for isolating parallel sub-elements with reverse conducting diode regions |
| 01/14/1997 | US5594259 Semiconductor device and a method for producing the same |
| 01/14/1997 | US5594171 Capacitance type acceleration sensor |
| 01/14/1997 | US5593928 Method of making a semiconductor device having floating source and drain regions |
| 01/14/1997 | US5593927 Method for packaging semiconductor dice |
| 01/14/1997 | US5593925 Semiconductor device capable of preventing humidity invasion |
| 01/14/1997 | US5593924 Use of a capping layer to attain low titanium-silicide sheet resistance and uniform silicide thickness for sub-micron silicon and polysilicon lines |
| 01/14/1997 | US5593917 Method of making semiconductor components with electrochemical recovery of the substrate |
| 01/14/1997 | US5593915 Method of manufacturing semiconductor device |
| 01/14/1997 | US5593912 SOI trench DRAM cell for 256 MB DRAM and beyond |
| 01/14/1997 | US5593910 Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device |
| 01/14/1997 | US5593909 Method for fabricating a MOS transistor having an offset resistance |
| 01/14/1997 | US5593908 Lateral resonant tunneling |
| 01/14/1997 | US5593907 Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices |
| 01/14/1997 | US5593906 Method of processing a polysilicon film on a single-crystal silicon substrate |
| 01/14/1997 | US5593905 Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
| 01/09/1997 | WO1997001238A2 Method of operating a ccd imager, and ccd imager suitable for the implementation of such a method |
| 01/09/1997 | WO1997001209A1 Converter circuit, circuitry having at least one switching device and circuit module |
| 01/09/1997 | WO1996030941A3 Method of manufacturing a semiconductor device with a bicmos circuit |
| 01/09/1997 | DE19531629C1 Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur Process for the preparation of an EEPROM semiconductor structure |
| 01/09/1997 | DE19524478A1 Elektrisch schreib- und löschbare Festwertspeicherzellenanordnung und Verfahren zu deren Herstellung Electrically writable and erasable read-only memory cell arrangement and method for its manufacture |
| 01/08/1997 | EP0752724A2 Method of forming an alloyed drain field effect transistor and device formed |
| 01/08/1997 | EP0752723A1 Bipolar transistor with optimized structure |
| 01/08/1997 | EP0752722A2 Fet with stable threshold voltage and method of manufacturing the same |
| 01/08/1997 | EP0752719A1 Method of manufacturing a silicon on sapphire integrated circuit arrangement |
| 01/08/1997 | EP0752717A1 A method of manufacturing a MOS integrated circuit having components with different dielectrics |
| 01/08/1997 | EP0752611A2 LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween |
| 01/08/1997 | EP0752593A2 Method for the early recognition of failures of power semiconductor modules |
| 01/08/1997 | EP0752165A1 Quantum-layer structure |
| 01/08/1997 | EP0752159A1 Semiconductor device provided with a microcomponent having a fixed and a movable electrode |
| 01/08/1997 | EP0752121A1 Methods of fabricating active matrix pixel electrodes |
| 01/08/1997 | EP0723706A4 Electrostatic discharge protection circuit |
| 01/08/1997 | EP0503077B1 Semiconductor device |
| 01/08/1997 | CN1033769C 电子电路 Electronic circuit |
| 01/07/1997 | US5592429 Writing/erasing time interval determining circuit |
| 01/07/1997 | US5592418 Non-volatile analog memory cell with double polysilicon level |
| 01/07/1997 | US5592415 Non-volatile semiconductor memory |
| 01/07/1997 | US5592412 Enhanced deep trench storage node capacitance for DRAM |
| 01/07/1997 | US5592409 Nonvolatile memory |
| 01/07/1997 | US5592318 Liquid crystal display apparatus having an inorganic filler between pixel electrodes and a method for producing the same |
| 01/07/1997 | US5592118 Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
| 01/07/1997 | US5592026 Integrated structure pad assembly for lead bonding |
| 01/07/1997 | US5592018 Membrane dielectric isolation IC fabrication |
| 01/07/1997 | US5592017 Self-aligned double poly BJT using sige spacers as extrinsic base contacts |
| 01/07/1997 | US5592015 Dielectric isolated type semiconductor device provided with bipolar element |
| 01/07/1997 | US5592014 High breakdown voltage semiconductor device |
| 01/07/1997 | US5592008 Semiconductor device and method for forming the same |
| 01/07/1997 | US5592007 Membrane dielectric isolation transistor fabrication |
| 01/07/1997 | US5592006 Gate resistor for IGBT |